Abstract: Light emitting devices (LEDs) are described. An LED includes a light emitting semiconductor structure that includes a light emitting active layer disposed between an n-layer and a p-layer. A wavelength converting material may be disposed adjacent the light emitting semiconductor structure. The wavelength converting material includes multiple pores, at least one of which contains a second material. An absolute value of a ratio of a coefficient of thermal expansion of the second material to a coefficient of thermal expansion of the wavelength converting material is at least two in an embodiment, at least ten in another embodiment, at least 100 in another embodiment, and at least 1,000 in yet another embodiment.

Abstract: Embodiments of the invention include a semiconductor structure comprising a light emitting layer. The semiconductor structure is attached to a support such that the semiconductor structure and the support are mechanically self-supporting. A wavelength converting material extends over the sides of the semiconductor structure and the support, wherein the wavelength converting material has a substantially uniform thickness over the top and sides of the semiconductor structure and the support.

Abstract: A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.

Abstract: A vehicle headlamp system includes a vehicle supported power and control system including a data bus. A sensor module can be connected to the data bus to provide information related to environmental conditions or information relating to presence and position of other vehicles and pedestrians. A separate headlamp controller can be connected to the vehicle supported power and control system and the sensor module through the bus. The headlamp controller can include an image frame buffer that can refresh held images at greater than 30 Hz speed. An active LED pixel array can be connected to the headlamp controller to project light according to a pattern and intensity defined by the image held in the image frame buffer and a standby image buffer can be connected to the image frame buffer to hold a default image.

Abstract: A light engine is disclosed in which the light engine contains a core having an opening extending completely therethrough and independently addressable LED segments. The opening defines an inner surface of the core. Each segment has LEDs and is attached to a flexible PCB. The PCB has a flexible body attached to one of an inner or outer surface of the core and to which the segments are mounted, and flexible legs extending from the body, along the core, and traverse and adjacent to the other of the inner or outer surface. A light guide plate (LGP) receives and guides light from the segments so that the light exits to provide illumination. The segments emit light in all directions of a plane created by the LGP. A reflector opposes and covers a top surface of the LGP and the segments and reflects light from the LGP back into the LGP.

Abstract: A light fixture includes a core having an opening; a flexible printed circuit board (PCB) supported by the core; a plurality of LED segments multiple LEDs mounted on the flexible PCB; and a light guide plate (LGP) having an opening within which the core is fitted, such that the LEDs emit light in all directions of a plane defined by the LGP, such light exiting the LGP to provide illumination.

Abstract: Embodiments of the invention include a luminescent structure including an InZnP core comprising an alloy including both In and Zn, and a shell disposed on a surface of the core, wherein the core has a crystal lattice constant that matches or nearly matches the lattice constant of the shell.

Abstract: A light emitting package and method of making the package are described. The package contains an LED bonded to a light converting layer using an adhesive. The adhesive is jet printed, mask sprayed or extruded onto one of the surfaces before bonding. The adhesive has materials in different sections that differ in refractive index, oxygen permeability, and/or heat conductivity. The materials are formed in concentric rings around the adhesive center, islands or lines and are disposed to provide optical lensing or increasing permeability/heat conductivity with decreasing distance from the center. A substantially-reflective optical side coat surrounds the LED, adhesive layer and connecting structure.

Abstract: A system and methods for light-emitting diode (LED) devices with a dimming feature that can tailor a color point shift in the light color temperature of a scattering/transparent layer to enlarge a dim to warm range are disclosed herein. A light-emitting device may include a wavelength converting structure configured to receive light from a light emitting semiconductor structure and an adjacent light scattering structure. The light scattering structure may comprise a plurality of scattering particles with a lower refractive index (RI) than the RI of the matrix material in which the scattering particles are disposed. The wavelength converting structure may include a red phosphor and a green phosphor such that to adjust overlap between green emission and absorption by the red phosphor to correspondingly adjust scattering and magnitude of color shift. In an embodiment, the light scattering structure may be integrated in the wavelength converting structure.

Abstract: The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Abstract: A light emitting diode (LED) module may include a direct current (DC) voltage node formed on a first layer. The DC voltage node may be configured to sink a first current. One or more devices may be formed on the first layer configured to provide a second current to one or more LEDs. A device of the one or more devices may carry a steep slope voltage waveform. A local shielding area may be formed in a second layer directly below the DC voltage node and the one or more devices. The local shielding area may include a substantially continuous area of conductive material. A conductive via may extend through one or more layers. The conductive via may electrically connect the DC voltage node and the local shielding area.

Abstract: A Light Emitting Device (LED) that has increased reliability and efficiency. Specifically, the LED may be formed using Atomic Layer Deposition to improve the thermal conductivity between the ceramic plate and the LED, decrease the amount of organic contamination, and increase the efficiency of the optical output of the LED.

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: Described herein is a system and method for tuning light scatter in an optically functional porous layer of an LED. The layer comprises a non-light absorbing material structure having a plurality of sub-micron pores and a polymer matrix. The non-light absorbing material forms either a plurality of micron-sized porous particles dispersed throughout the layer or a mesh slab, wherein a plurality of sub-micron pores is located within each micron-sized porous particle or forms an interconnected network of sub-micron pores within the mesh slab, respectively. A polymer matrix, such as a high refractive index silicone fills the plurality of sub-micron pores creating an interface between the materials. Refractive index differences between the materials allow for light scatter to occur at the interface of the materials. Light scatter can also be decreased as a function of temperature, creating a system for tuning light scatter in both an off state and on state of an LED.

Abstract: A lighting module and a lighting assembly provide high irradiance at long working distances. The lighting module includes at least two rows of multiple LEDs separated from each other by an intermediate area between the rows and one integral optical element on top of the at least two rows of multiple LEDs. The one integral optical element includes one collimator lens portion per row of LEDs extending along the row of LEDs. The collimator lens portions of different rows are merged together above the intermediate area. The collimator lens portions, seen in a direction perpendicular to the at least two rows, provide an off-axis focus for the one collimator lens portion, and focus light emitted from the at least two rows of multiple LEDs in a focus line extending parallel to the rows of LEDs at a focus distance above the optical element.

Abstract: A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact formed on the p-type region. The p-contact includes a reflector and a blocking material. The blocking material is disposed over the first portion and no blocking material is disposed over the second portion.

Abstract: A system can include a light emitting diode (LED) and a transparent structure disposed over the LED. The transparent structure includes a first surface that reflects light extracted from the LED and incident on the first surface. The transparent structure also includes an exit surface opposite the first surface. The exit surface includes a first area that is textured to diffuse light over a first angular range and a second area that is textured to diffuse light over a second angular range. The second angular range is wider than the first angular range.

Abstract: Disclosed lens designs enable uniform light distribution without hot spot, achieving wider transfer functions of light compared with traditional lenses, with a benefit of reducing the number of light sources needed and overall cost for direct-lit backlight device. A disclosed lens includes a beam shaping element on the top thereof and a backlight device incorporating the lens and the beam shaping element to eliminate a light hot spot produced by the backlight device and obtain a uniform light distribution at the illumination field. The disclosed lens is especially useful when extremely wider transfer function or extremely thin backlight is needed.

Abstract: A flash system for an electronic device includes a ring-shaped light guide having a central opening. A camera lens is positioned in or behind the opening. A first light emitting diode (“LED”) is mounted on a printed circuit board (“PCB”), and the LED and PCB are encapsulated by a molded light guide of the flash system. An identical LED and PCB are encapsulated at an opposite end of the molded light guide (i.e., 180 degrees away). The back surfaces of each PCB diffusively reflects light from the LED on the other PCB. Light extraction features on the light guide surface uniformly leak out light from the LEDs. The light emission profile of the light guide has a peak axially aligned with the central opening of the light guide and rolls off to the edge of the camera's field of view.

Abstract: The present invention relates to a light emitting apparatus. The apparatus comprises a high intensity light source configured to emit light of a first wavelength; a beam shaping optical element configured to redistribute the light of the first wavelength emitted by the high intensity light source into an outgoing light beam having a far field beam cross sectional profile having a spatially flat light distribution; and a light converting member configured to be exposed to the outgoing light beam having the spatially flat light distribution, to convert at least a portion of the light of the first wavelength into light of a second wavelength, and to emit the light of the second wavelength.