Abstract: An illumination system can produce a dynamically variable illumination pattern. The illumination system can include a light guide. The illumination system can include projection optics, which can contribute to the illumination pattern at relatively low beam angles (i.e., beam angles formed with respect to a surface normal of the light guide). The projection optics can include individually addressable light-producing elements that can direct light through one or more focusing elements. A controller can control which of the light-producing elements are electrically powered and can therefore control the illumination pattern contribution from the projection optics. The illumination system can also include scattering optics, which can contribute to the illumination pattern at relatively high beam angles. The scattering optics can direct light out of the light guide over a relatively large surface area, which can help reduce glare when the light guide is viewed directly.

Abstract: Multi-color flash with image post-processing that uses a camera device with a multi-color flash and implements post-processing to generate images is described. In one aspect, the multi-color flash with image post-processing may be implemented by a controller configured to control a camera and flashes of at least two different colors. The controller may be configured to cause the camera to acquire a first image of a scene while the scene is being illuminated with the first flash but not the second flash, then cause the camera to acquire a second image of the scene while the scene is being illuminated with the second flash but not the first flash, and generate a final image of the scene in post-processing based on a combination of the first image and the second image.

Abstract: A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

Abstract: A light engine and system are disclosed in which the light engine contains a core comprising an opening extending through opposing surfaces and a flexible printed circuit board (PCB). The PCB includes a flexible body disposed on an outside of the core and having independently addressable sets of illumination sources mounted thereto, and flexible legs extending from the body and through the opening. The legs are bent such that a terminal portion of each leg is substantially parallel to the opposing surfaces of the core. Independent control of the sets of illumination sources is provided via the legs. The body is separated into segments, each on a different section of the outside and containing body contacts electrically independent of the body contacts of each other segment. Each leg is associated with a different segment, and contains leg contacts on the terminal portion in electrical contact with the associated body contacts.

Abstract: A luminaire can include a curved light guide plate including a first receiving surface, an emitting surface, a major surface opposing the emitting surface, second and third receiving surfaces, the first receiving surface extending in a first dimension between the major surface and the emitting surface and extending in a second dimension between the second and third receiving surfaces, the first receiving surface, emitting surface, and major surface including a positive, non-zero radius of curvature (R) and the second and third receiving surfaces generally planar, and a plurality of LEDs positioned to emit light into one or more of the first: receiving surface, second receiving surface, third receiving surface, or a fourth receiving surface, the fourth receiving surface opposing the first receiving surface.

Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 ?m to 100 ?m and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 ?m to 10 ?m.

Abstract: An adaptive lighting system comprises an array of independently controllable LEDs, and a metalens positioned to collimate, focus, or otherwise redirect light emitted by the array of LEDs. The adaptive lighting system may optionally include a pre-collimator positioned in the optical path between the array of LEDs and the metalens.

Abstract: A semiconductor light-emitting device includes a junction or active layer between doped semiconductor layers coextensive over a contiguous device area, corresponding sets of electrical contacts connected to the semiconductor layers, and multiple nanostructured optical elements at a surface of one semiconductor layer opposite the other semiconductor layer. Composite electrical contacts of one set include a conductive layer, a transparent dielectric layer between the conductive and semiconductor layers, and vias through the dielectric layer connecting the conductive and semiconductor layers. The nanostructured elements redirect light, propagating laterally in optical modes supported by the semiconductor layers, to exit the device. The composite electrical contacts can be independent and define independently addressable pixel areas of the device. The nanostructured elements and thin semiconductor layers can yield high contrast between adjacent pixel areas without trenches between them.

Abstract: This specification discloses LEDs in which the light emitting active region of the semiconductor diode structure is located within an optical cavity defined by a nanostructured layer embedded within the semiconductor diode structure on one side of the active region and a reflector located on the opposite side of the active region from the embedded nanostructured layer. The reflector may, for example, be a conventional specular reflector disposed on or adjacent to a surface of the semiconductor diode structure. Alternatively, the reflector may or comprise a nanostructured layer. The reflector may comprise a nanostructured layer and a specular reflector, with the nanostructured layer disposed adjacent to the specular reflector between the specular reflector and the active region.

Abstract: A lighting device is disclosed that includes a plurality of light emitting diodes arranged in an array, a plurality of trenches disposed between and optically isolating the light emitting diodes, and a patterned converter layer disposed over an array surface formed by light emitting surfaces of the light emitting diodes and upper surfaces of the trenches, the patterned converter layers including a first region having a first converter and a second region having a second converter different from the first converter, the first region and second region disposed over different areas of the array surface.

Abstract: A method for control of a pixel array based on a temperature estimate is provided. A method includes sampling an anode voltage of each LED of a plurality of pixels resulting in sampled voltages, determining an average voltage based on the sample voltages, and determining a total voltage to provide to the pixels based on the average voltage and voltage data from a memory coupled to the controller, the voltage data including one or more of a 3-sigma value, a driver headroom value, a resistance value, or a k-factor value.

Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.

Abstract: The invention describes an infrared imaging assembly (1) for capturing an infrared image (M0, M1) of a scene (S), comprising an infrared-sensitive image sensor (14); an irradiator (10) comprising an array of individually addressable infrared-emitting LEDs, wherein each infrared-emitting LED is arranged to illuminate a scene region (S1, . . . , S9); a driver (11) configured to actuate the infrared irradiator (10) by applying a switching pulse train (T1, . . . , T9) to each infrared-emitting LED; an image analysis module (13) configured to analyse a preliminary infrared image (M0) to determine the required exposure levels (130) for each of a plurality of image regions (R1, . . . , R9); and a pulse train adjusting unit (12) configured to adjust the duration (L1, . . . , L9) of a switching pulse train (T1, . . . , T9) according to the required exposure levels (130).

Abstract: A self-centering ring for an LED retrofit lamp, an LED retrofit lamp, and a vehicle headlight are described. The lamp includes a ring-shaped body that includes an outer ring and an opening in a central region of the ring-shaped body that receives the LED retrofit lamp.

Abstract: This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+y?zSizO4?4y?zN4y+z:Eux (AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.

Abstract: A light emitting device and method of forming a light emitting device are disclosed. The light emitting device includes a light emitting diode and a phosphor layer formed on the light emitting diode, the phosphor layer including a plurality of phosphor particles formed in a particle layer, the particle layer including interstices between the phosphor particles, and a matrix material disposed in a portion of the interstices. A plurality of cavities may be disposed in a remaining portion of the interstices.

Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.

Abstract: A centering ring for an LED retrofit lamp is described. The lamp includes a ring-shaped body that includes an outer ring and an opening in a central region of the ring-shaped body that receives the LED retrofit lamp. The lamp also includes a recess formed in the outer rim of the ring-shaped body in at least two locations.

Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa. The devices and methods for their manufacture include a thin film transistor (TFT).