Abstract: Techniques for controlling the color of a light source during dimming are provided. A current control circuit may be arranged within a light source module and configured to adjust, according to a driving input current, the current path that passes through some of the lights (e.g., LEDs) in the module. If multiple current paths that pass through these lights have different impedances, a change in current path will cause the amount of current passing through these lights to increase or decrease. If the adjusted lights have a different color temperature than the other lights of the light source module, the change in current path as the driving current is adjusted can effect a change in color temperature as the light source module is dimmed.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.

Abstract: Light-emitting devices and particularly light-emitting device assemblies that include light-emitting diodes (LEDs) as light sources are described. The methods and systems of at least some of the embodiments described herein increase the removal of thermal energy generated by the light-emitting devices.

Abstract: An embodiment of the invention comprises a first III-V semiconductor structure including a first light emitting layer disposed between a first n-type region and a first p-type region, and a second III-V semiconductor structure including a second light emitting layer disposed between a second n-type region and a second p-type region. A first contact is formed on a top surface of the first III-V semiconductor structure. A second contact is formed on a bottom surface of the second III-V semiconductor structure. A bonding structure is disposed between the first and second III-V semiconductor structures.

Abstract: Wavelength converting light-emitting devices and methods of making the same are provided. In some embodiments, the devices include a phosphor material region designed to convert the wavelength of emitted light.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: The present invention relates to light-emitting diodes (LEDs), and related components, processes, systems, and methods. In certain embodiments, an LED that provides improved optical and thermal efficiency when used in optical systems with a non-rectangular input aperture (e.g., a circular aperture) is described. In some embodiments, the emission surface of the LED and/or an emitter output aperture can be shaped (e.g., in a non-rectangular shape) such that enhanced optical and thermal efficiencies are achieved. In addition, in some embodiments, chip designs and processes that may be employed in order to produce such devices are described.

Abstract: The present invention relates to systems and methods associated with selective wet etching and textured surface planarization. The systems and methods described herein can be used to etch a component of a multi-layer stack, such as a GaN layer. In some embodiments, the multi-layer stack can include a substrate having a patterned surface and a light generating region. The substrate can be removed from the first multi-layer stack to form a second multi-layer stack. In some embodiments, the pattern on the surface of the substrate can leave behind a pattern on a surface of the second multi-layer stack. Accordingly, in some cases, the surface of the second multi-layer stack can be wet etched, for example, to smoothen the surface. In some embodiments, removing the substrate can expose an N-face of a GaN layer, and the wet etch can be performed such that the N-face of the GaN layer is etched. In some embodiments, the multi-layer stack includes a light generating region and can be part of a light emitting device.

Abstract: A slim LED package configured to handle large current, having a narrow width, an LED chip mounting area positioned centro-symmetrically within the package, mounting holes positioned equidistantly from the mounting area, wherein multiple packages may be arranged with alternating anode and cathode ends in such a manner that a high-power density radiometric flux line may be created. Some embodiments include current density management areas positioned on one more sides of the LED chip mounting area.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.

Abstract: A system and method for displacing the etendue value of light emitted as measured in a plane at an emission surface of a light emitting device to a second plane at determined height above the emission surface using a light coupling layer. The system and method increases light output or extraction of generated light from the light emitting device through a light coupling layer.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Light-emitting devices, and related components, systems, and methods associated therewith are provided.