Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Methods of forming light-emitting structures, as well as related devices and/or systems are described. In some cases, the methods utilize a layer transfer and/or layer separation step(s) used to form such structures.

Abstract: Optical display systems and methods are disclosed.

Abstract: Light-emitting devices and associated methods are provided. The light emitting devices can have a wavelength converting material-coated emission surface.

Abstract: Electronic device contact structures are disclosed.

Abstract: A system and method for tuning white light while reducing manufacturing costs.

Abstract: A system and method for displacing the etendue value of light emitted as measured in a plane at an emission surface of a light emitting device to a second plane at determined height above the emission surface using a light coupling layer. The system and method increases light output or extraction of generated light from the light emitting device through a light coupling layer.

Abstract: Light-emitting devices, and related components, systems, and methods associated therewith are provided.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: Light-emitting devices (e.g., LEDs) and methods associated with such devices are provided. In some embodiments, the device includes a distribution of light-generating portions (including active regions) that are spatially localized and separated (e.g., horizontally or vertically) from one or more patterned light extraction portions. This arrangement can allow light generated by the device to propagate and pass through regions of low absorption (e.g., light-extraction portions) rather than in regions of high absorption (e.g., light-generating portions), which can enhance light emission.

Abstract: A light emitting component can include a substrate, a light emitting device supported by the substrate, wherein the light-emitting device has first and second terminals, and a switching element supported by the substrate and having first and second terminals electrically connected to the first and second terminals of the light-emitting device, respectively. The switching element is configured to, at least in part, divert at least some current away from the light emitting device when the switching element is in a closed state. An electrical connection between the first terminal of the switching element and the first terminal of the light emitting device can have a length of less than 5 cm (e.g., less than 2 cm, less than 1 cm, less than 5 mm, less than 1 mm). A current regulator may be supported by a second substrate and can supply current to the light emitting device.

Abstract: Light-emitting devices, and related components, systems, and methods associated therewith are provided.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: Light emitting diode systems are disclosed.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: The present invention relates to systems and methods associated with selective wet etching and textured surface planarization. The systems and methods described herein can be used to etch a component of a multi-layer stack, such as a GaN layer. In some embodiments, the multi-layer stack can include a substrate having a patterned surface and a light generating region. The substrate can be removed from the first multi-layer stack to form a second multi-layer stack. In some embodiments, the pattern on the surface of the substrate can leave behind a pattern on a surface of the second multi-layer stack. Accordingly, in some cases, the surface of the second multi-layer stack can be wet etched, for example, to smoothen the surface. In some embodiments, removing the substrate can expose an N-face of a GaN layer, and the wet etch can be performed such that the N-face of the GaN layer is etched. In some embodiments, the multi-layer stack includes a light generating region and can be part of a light emitting device.

Abstract: Optical display systems and methods are disclosed.

Abstract: A method, and associated apparatus, for attaching a component (e.g., an electronic and/or optoelectronic component) is provided which can facilitate low-voiding of an attachment layer. The method includes disposing an attachment material layer over a surface, providing the component having a backside surface, disposing a portion of the backside surface of the component over a first portion of the attachment material layer such that a substantial portion of the backside surface of the component is not disposed over the attachment material layer, and moving the component such that the component is attached to at least a portion of the attachment material layer that is substantially larger than the first portion of the attachment material layer. The attachment material can include a solder.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: Curing systems and related methods are described herein. The curing systems include an LED source.