Patents Assigned to M/A-COM Technology Solutions Holdings, Inc.
  • Publication number: 20190013196
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: July 10, 2017
    Publication date: January 10, 2019
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Publication number: 20170338194
    Abstract: Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.
    Type: Application
    Filed: May 18, 2016
    Publication date: November 23, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Timothy Gittemeier
  • Publication number: 20170104073
    Abstract: Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A two-stage tuning procedure is described. The transistor may comprise gallium nitride and may be configured as a power transistor capable of handling up to 1000 W of power. A tuned transistor may operate at frequencies up to 6 GHz with a peak drain efficiency greater than 60%.
    Type: Application
    Filed: October 8, 2015
    Publication date: April 13, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: Walter H. Nagy, Lyndon Pattison
  • Publication number: 20170069742
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Publication number: 20170069500
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • Publication number: 20170069717
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: Kevin J. Linthicum, John Claassen Roberts
  • Publication number: 20170069716
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum
  • Publication number: 20170069723
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20170069743
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: John Claassen Roberts
  • Publication number: 20170069746
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • Publication number: 20170069720
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Publication number: 20170069484
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Publication number: 20170069744
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Publication number: 20170069721
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20170069722
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20170069713
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, JR.
  • Publication number: 20170069745
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20160285239
    Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
    Type: Application
    Filed: May 20, 2016
    Publication date: September 29, 2016
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: Cristian STAGARESCU, Alex A. BEHFAR, Norman Sze-keung KWONG
  • Publication number: 20160268769
    Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
    Type: Application
    Filed: May 20, 2016
    Publication date: September 15, 2016
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: Cristian STAGARESCU, Alex A. BEHFAR, Norman Sze-keung KWONG
  • Patent number: 9401582
    Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
    Type: Grant
    Filed: May 7, 2013
    Date of Patent: July 26, 2016
    Assignee: M/A-COM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Cristian Stagarescu, Alex A. Behfar, Norman Sze-keung Kwong