Abstract: A layer of a substance such as a metal, non-metal or metal alloy is deposited, preferably by sputtering, onto the surface of a substrate such as a semiconductor wafer. The adatoms of the deposited layer are mobilized by being bombarded with a flux of low energy neutral atoms or molecules at an oblique angle of incidence to enhance step coverage and/or planarization of the semiconductor wafer. The neutral atoms or molecules are formed within the plasma by applying a negative bias potential to a reflector electrode which will attract positive ions from the plasma. The neutral atoms or molecules elastically scatter from the surface of the electrode to bombard the adatoms being deposited during the operation of the sputter source.

Abstract: An apparatus and method is disclosed for applying a uniform layer of a fluid material such as photoresist onto the surface of a rotating workpiece such as a semiconductor wafer. A dispensing nozzle is provided with a rectangular or oblong shaped opening for painting a broad swath of the fluid material onto the surface of the workpiece while the nozzle moves along a radial path inwardly from the peripheral edge of the workpiece. The use of a rectangular or oblong shaped nozzle opening minimizes the amount of fluid material being consumed while providing a uniform thin film coating on the workpiece surface.

Abstract: A device for cooling a sputter target of a deposition apparatus utilizes an annular shaped member of high thermal conductivity disposed between the cathode and the target electrode. The member is constructed of a base disposed in a corresponding recess in the cathode, or integrally formed therewith, and a member projecting perpendicularly from the base disposed in a corresponding annular shaped recess in the target electrode. One or more members are disposed proximate a source of cooling water applied to the cathode, and at points of greatest power flux in the target electrode. Upon heating, the target electrode expands radially against the members, thereby effecting reduction in the temperature of the target electrode.

Abstract: An apparatus and method achieves the submersiontype processing of silicon wafers in a manufacturing process for the fabrication of semiconductor devices therefrom. The silicon wafer is uniformly flooded with the process fluid in a manner which prevents impingement thereof during chemical processing, such as wet etching, cleaning, photoresist developing and the like. Upon flooding the silicon wafer, a gas pocket is formed between a portion of the lower surface of the wafer and an adjacent portion of vacuum chuck to which the wafer is mounted. The resulting gas pocket prevents accumulation of processed fluid therein to facilitate spin drying of the wafer.

Abstract: A self-contained modular processing apparatus is disclosed for processing workpieces, and in particular, silicon wafers. The apparatus is constructed of framed modules which plug into a service facility docking subassembly and interlock therewith to make up a complete modular processing system for wafer processing. Each module may be provided with its own wafer transporting mechanism and includes a built-in CPU such that each module is an independent, stand-alone processing unit. Each processing unit, by being capable of independent operation, functions as a building block to configure a modular processing system capable of handling wafer flow in multiple directions while performing a multitude of processing functions or operations. Individual modules are arranged along a line of single fold symmetry such that a single transport mechanism may be employed for transferring wafers among adjacent modules.

Abstract: Apparatus and method for the deposition of a thin metal film on a surface of a workpiece as the workpiece is positioned adjacent to a deposition source and as the workpiece and deposition source rotate relative to each other about a first axis. The workpiece can also be moved relative to the deposition source about a second axis as the workpiece and the deposition source rotate relative to each other about the first axis. The distance between the workpiece and the deposition source can be adjusted.

Abstract: In semiconductor treatment apparatus with a plasma generating zone, a treatment zone, and a bent path connecting the two so as to block direct transmission of ultraviolet light from the plasma generating zone to the workpiece in the treatment zone, a light trap is provided to suppress indirect transmission of light as by reflection or by transmission within transparent walls of a conduit defining the bent path.

Abstract: A layer of a substance such as an aluminum alloy is deposited, preferably by sputtering, onto a surface of a substrate such as a semiconductor wafer. The deposited substance is redistributed by bombarding the layer with ions. The ion bombardment may be induced by applying low frequency RF excitation at about 5 KHz -1 MHz to the substrate.

Abstract: A self-contained modular processing apparatus is disclosed for processing workpieces, and in particular, silicon wafers. The apparatus is constructed of framed modules which plug into a service facility docking subassembly and interlock therewith to make up a complete modular processing system for wafer processing. Each module may be provided with its own wafer transporting mechanism and includes a built-in CPU such that each module is an independent, stand-alone processing unit. Each processing unit, by being capable of independent operation, functions as a building block to configure a modular processing system capable of handling wafer flow in multiple directions while performing a multitude of processing functions or operations. Individual modules are arranged along a line of single fold symmetry such that a single transport mechanism may be employed for transferring wafers among adjacent modules.

Abstract: A method of processing a plurality of semiconductor wafers from a wafer cassette including a wafer transfer housing and one or more processing chambers. A wafer is removed from its cassette and transported through the transfer housing into one or more processing chambers for etching, deposition or other such operations. The processed wafer is replaced into its cassette after being transported back through the wafer transfer housing.

Abstract: A balancing chuck is disclosed for semiconductor wafers having a flat region which typically causes wafer imbalance on spinning equipment. The wafer's flat region is determined by a proximity sensor mounted on a centering arm overlying the wafer. The chuck is constructed to include an annular race containing a spherical counterweight. As the chuck is rotated to determine the wafer's flat region, a magnet prevents movement of the spherical counterweight within the race and allows for its subsequent alignment with the mass imbalance. A plurality of circumferential pockets are provided within the race to retain the position of the counterweight which functions as a counterbalance maintained in proper angular alignment during spinning of the chuck.

Abstract: Methods and apparatus for transferring workpieces, such as silicon wafers, between a pair of cassettes involve simultaneously and conjointly indexing the cassettes such that the cassettes are incrementally lowered as the individual workpieces are removed from one cassette and delivered to the other cassette. Such indexing of the cassettes is achieved by a single elevator mechanism adapted to support both of the cassettes such that they are vertically and horizontally offset relative to each other.

Abstract: Rinsing methods and apparatus employ a rotatable work support to spray rinsing liquid against a surrounding wall of a processing station. The rinsing liquid washes residual processing liquid from the surrounding wall of the processing station, whereby the work support performs a cleaning function in addition to its conventional processing function.

Abstract: A microwave apparatus for generating plasma afterglows for stripping and/or etching of photoresist and semiconductor material at a sufficiently high rate to allow single wafer processing in a fully automated reactor. The apparatus includes a stripping/etching chamber for plasma afterglow stripping of photoresist and selective isotropic etching of semiconductor material, such as polysilicon and silicon nitride, using a variety of etchant compositions which form reactive species in a plasma. In addition, the apparatus may be employed for anisotropic etching for semiconductive material by decoupling etchant generation from ion production and acceleration by using two plasma sources, i.e., microwave power and radio frequency (RF) power. Anisotropic etching is carried out in an etching chamber which subjects, in situ, a plasma afterglow to RF power and which is designed to operate in the reactive ion etch mode.

Abstract: Apparatus and method for the deposition of a thin metal film on a surface of a workpiece as the workpiece is positioned adjacent to a deposition source and as the workpiece and deposition source rotate relative to each other about a first axis. The workpiece can also be moved relative to the deposition source about a second axis as the workpiece and the deposition source rotate relative to each other about the first axis. The distance between the workpiece and the deposition source can be adjusted.

Abstract: A vacuum processing apparatus and method utilize a vacuum chamber formed from a pair of casing sections, one of which is movable in to and out of sealing engagement with the other casing section. The movable casing section is equipped to carry a workpiece such that the workpiece is carried by the movable casing section as it moves into and out of sealing engagement with the other casing section and such that the workpiece is delivered to a processing station associated with the other casing section when the two casing sections are in sealing engagement with each other.

Abstract: An anti-drip system for a dispenser in the form of a deformable conduit adapted to dispense a liquid, such as a photoresist, from a dispensing tip located at one end of the conduit includes a rigid housing which surrounds an intermediate portion of the conduit. The housing is closed except for a port which permits pressurized air to be supplied to and exhausted from the housing. At the commencement of a dispensing operation, the liquid is transported through the conduit as the housing is simultaneously pressurized, thereby crimping the intermediate portion of the conduit. At the conclusion of the dispensing operation, air pressure in the housing is simultaneously reduced, thereby allowing the conduit to expand and assume its natural substantially uncrimped shape. Expansion of the conduit creates a vacuum sufficient to suck back liquid which is being dispensed from the conduit.

Abstract: An apparatus and method for retarding splashback of liquids collected from a rotating workpiece is disclosed. In accordance with the apparatus, there is provided a work station upon which a workpiece, such as a semiconductor wafer, is positioned, a collecting means for collecting liquids discharged from the workpiece by rotation of the work station and a means for rotating the collecting means. Also in accordance with the present invention, the collecting means may be rotated separately from the work station but in the same direction as the work station. In accordance with the method, there is provided applying liquids to the workpiece, rotating work station with the workpiece positioned on it and rotating a collecting means in the same direction as the work station. Also in accordance with the invention, the apparatus may be combined with apparatus for a segregated drainage of first and second liquids such that splashback during collection of these liquids will be retarded.

Abstract: An arrangement is provided for performing a plurality of processes on workpieces, such as silicon wafers, while they remain at a single processing station. The processing operations include scrubbing, coating, developing, and/or baking the wafer without removing it from a work support at the work station. The apparatus includes a transferring device for automatically transferring the wafer from a cassette to a work support. In addition, positioned about the centrally-located work support is a scrubbing device for scrubbing the wafer and a liquid dispensing device for dispensing liquid on the wafer. Each is movable into and out of position over the work support. In addition, the work support is surrounded by a microwave chamber for baking the wafer while it remains on the work support.

Abstract: A liquid dispenser is disclosed which is arranged to dispense a fixed amount of liquid on a workpiece and is then moved away from the workpiece so that no further drops of the liquid fall on the workpiece.