Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
July 10, 2017
Publication date:
January 10, 2019
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, James W. Cook, JR.
Abstract: Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.
Type:
Application
Filed:
May 18, 2016
Publication date:
November 23, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Abstract: Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A two-stage tuning procedure is described. The transistor may comprise gallium nitride and may be configured as a power transistor capable of handling up to 1000 W of power. A tuned transistor may operate at frequencies up to 6 GHz with a peak drain efficiency greater than 60%.
Type:
Application
Filed:
October 8, 2015
Publication date:
April 13, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, James W. Cook, JR.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, James W. Cook, JR.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, James W. Cook, JR.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, James W. Cook, JR.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
Kevin J. Linthicum, John Claassen Roberts
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, Kevin J. Linthicum
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, JR.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
September 8, 2015
Publication date:
March 9, 2017
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
Type:
Application
Filed:
May 20, 2016
Publication date:
September 29, 2016
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
Cristian STAGARESCU, Alex A. BEHFAR, Norman Sze-keung KWONG
Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
Type:
Application
Filed:
May 20, 2016
Publication date:
September 15, 2016
Applicant:
M/A-COM Technology Solutions Holdings, Inc.
Inventors:
Cristian STAGARESCU, Alex A. BEHFAR, Norman Sze-keung KWONG
Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
Type:
Grant
Filed:
May 7, 2013
Date of Patent:
July 26, 2016
Assignee:
M/A-COM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Inventors:
Cristian Stagarescu, Alex A. Behfar, Norman Sze-keung Kwong