Abstract: Memory devices are implemented within a vertical memory structure, comprising a stack of alternating layers of insulator material and word line material, with a series of alternating conductive pillars and insulating pillars disposed through stack. Data storage structures are disposed on inside surfaces of the layers of word line material at cross-points of the insulating pillars and the layers of word line material. Semiconductor channel material is disposed between the insulating pillars and the data storage structures at cross-points of the insulating pillars with the layers of word line material. The semiconductor channel material extends around an outside surface of the insulating pillars, contacting the adjacent conductive pillars on both sides to provide source/drain terminals.

Abstract: Systems, methods, circuits, and apparatus for managing signal transfers in semiconductor devices are provided. In one aspect, an integrated circuit includes: one or more target units each configured to receive a signal and a plurality of inverting units arranged on signal paths to the one or more target units. For each of the one or more target units, one or more corresponding inverting units of the plurality of inverting units are configured to invert the signal multiple times along a corresponding signal path to the target unit to cause a signal width of the inverted signal received by the target unit to be substantially identical to a signal width of the signal.

Abstract: Systems, methods, circuits, and apparatus for managing multi-block operations in memory devices are provided. In one aspect, a memory device includes a memory cell array including at least two blocks, a bit line coupled to a string of memory cells in each of the at least two blocks respectively, a common source line (CSL) coupled to strings coupled to the bit line in the at least two blocks, and a circuitry configured to perform a multi-block operation in the memory cell array by at least one of: forming a first current path from the bit line through the strings to the CSL coupled to a ground to discharge a capacitor associated with the bit line that is pre-charged, or forming a second current path from the CSL coupled to a supply voltage through the strings to the bit line to charge the capacitor that is pre-discharged.

Abstract: Vertical 3D cross point memory has memory cells formed at cross points of vertical bit lines and horizontal word lines. The memory cells are formed of two layers, enabling higher density than conventional techniques. One of the layers optionally includes OTS (Ovonic Threshold Switch) material to enable information storage.

Abstract: The present disclosure provides a 3D memory device such as a 3D AND flash memory and a method of forming a seal structure. The 3D memory device includes a chip region including a chip array and a seal region including a seal structure. The seal structure includes a ring-shaped stack structure disposed on a substrate and surrounding the chip array and a dummy channel pillar array penetrating through the ring-shaped stack structure and including a first dummy channel pillar group and a second dummy channel pillar group. The first dummy channel pillar group includes first dummy pillars that are arranged in a first direction and a second direction crossing the first direction to surround the chip array. The second dummy channel pillar group includes second dummy pillars that are arranged in the first direction and the second direction to surround the chip array. The first and the second dummy channel pillars are staggered with each other in the first and second directions.

Abstract: The application discloses an analog content addressable memory (CAM) device, an analog CAM cell and a method for data searching and comparing thereof. The CAM cell includes: a first memory cell and a second memory cell coupled to each other, wherein the analog CAM cell stores analog storage data which is corresponding to a match range, the match range is determined based on first and second threshold voltages of the analog CAM cell; an analog search data is converted into first and second analog search voltages; the first and the second memory cells receive the first and the second analog search voltages; and the analog CAM memory cell generates a memory cell current, or the analog CAM memory cell keeps or discharges a match line voltage on a match line coupled to the analog CAM memory cell.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: A memory device includes a substrate, a first dielectric structure, a second dielectric structure, a channel structure, a source structure, and a drain structure. The first dielectric structure and the second dielectric structure are disposed on the substrate, and are spaced apart from each other in a first direction. The channel structure interconnects the first dielectric structure and the second dielectric structure. The source structure and the drain structure are on opposite ends of the channel structure, and are respectively embedded in the first dielectric structure and the second dielectric structure, wherein a ratio in length along the first direction of the source structure to the first dielectric structure is between 0.3 and 0.4.

Abstract: A memory device includes a source element, a drain element, channel layers, control electrode layers, and a memory layer. The channel layers are individually electrically connected between the source element and the drain element. Memory cells are defined in the memory layer between the control electrode layers and the channel layers.

Abstract: A memory device includes a command decoder that implements security logic to detect a command sequence to read a security region of a memory array with continuous encrypted data and to output/input specific contexts for the data. Output/input of specific contexts can be during a dummy cycle to achieve greater performance. A host interfacing can, for example, execute a single command to both get the encrypted data and specific contexts that were used to encrypt the data. Our technology can implement transferring data on the system bus in ciphertext and encrypted by a different Nonce or a different session key than used in a previous transfer operation. In this way, data will be represented with different ciphertext on the bus at different sessions; thereby defending against a replay attack.

Abstract: A data search method for a memory device is provided. The data search method includes: based on a recorded compression mode, vectoring a search data to generate a search data vector, and based on the recorded compression mode, compressing the search data and a plurality of objects in a database; setting a search condition; searching the objects of the database by the search data vector to determine whether the search data is matched with the objects of the database; and recording and outputting at least one matched object of the database, the at least one matched object matched with the search data.

Abstract: Systems, devices, methods, and circuits for managing content addressable memory (CAM) devices. In one aspect, a semiconductor device includes: a memory cell array configured to store data in memory cells, and a circuitry coupled to the memory cell array and configured to execute a search operation in the memory cell array according to a search instruction. The search instruction includes at least one of search data or an option code, and the option code specifies, for the search operation, at least one of a search length or a search depth.

Abstract: A memory device includes a first stack structure including first gate layers and first insulating layers alternately stacked with each other. A first channel pillar extends through the first stack structure. A second stack structure is located on the first stack structure and includes second gate layers and second insulating layers alternately stacked with each other. A second channel pillar extends through the second stack structure and is separated from the first channel pillar. A first conductive pillar and a second conductive pillar are located in and electrically connecting with the first channel pillar and the second channel pillar. A charge storage structure is located between the first gate layers and the first channel pillar, and between the second gate layers and the second channel pillar. The memory device may be applied to a 3D AND flash memory.

Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a substrate, a via, a liner layer, a barrier layer, and a conductor. The via penetrates through the substrate. The liner layer is formed on a sidewall of the via. The barrier layer is formed on the liner layer. The barrier layer comprises a conductive 2D material. The conductor fills a remaining space of the via.

Abstract: A memory chip, a memory device and an operation method are disclosed. The memory chip includes a number of memory units and a control logic circuit. The memory units could be configured as TLC, MLC or SLC. The control logic circuit is configured to use TLC programming approach to program MLC and SLC.

Abstract: A memory device is provided. The memory device includes a memory array of a plurality of memory elements, a plurality of word lines or word line pairs, a plurality of bit line pairs, and a plurality of common source lines. Each of the memory elements includes two memory cells. The memory device is configured for calculating an energy value based on a plurality of state signals and a plurality of coefficients, and the two memory cells of each of the memory elements are configured for performing an individual selection such that one of the two memory cells of each of the memory elements receives two corresponding state signals from a corresponding word line or a corresponding word line pair and a corresponding bit line pair and generates an output current into a corresponding common source line for calculating the energy value.

Abstract: A multilevel content addressable memory, a multilevel coding method and a multilevel searching method are provided. The multilevel coding method includes the following steps. A highest decimal value of a multilevel-bit binary data is obtained. A length of a digital string data is set as being the highest decimal value of the multilevel-bit binary data. The multilevel-bit binary data is converted into the digital string data. If a content of the multilevel-bit binary data is an exact value, a number of an indicating bit in the digital string data is the exact value.

Abstract: A memory device for in-memory search is provided. The memory device includes a plurality of memory cells, and each of the memory cells stores a stored data and receives a search data, including a first transistor and a second transistor. The first transistor has a first threshold voltage and receives a first gate bias. The second transistor is connected to the first transistor, and the second transistor has a second threshold voltage and receives a second gate bias. The stored data is encoded according to the first threshold voltage and the second threshold voltage, and the search data is encoded according to the first gate bias and the second gate bias. There is a mismatch distance between the stored data and the search data. An output current generated by each of the memory cells is related to the mismatch distance.

Abstract: Systems, methods, and apparatus including computer-readable mediums for managing status information of logic units are provided. In one aspect, a device includes a semiconductor device including one or more logic units and a reporting bus and a controller coupled to the semiconductor device and configured to store status information of the one or more logic units in the semiconductor device. Each of the one or more logic units is configured to send information associated with the logic unit using a corresponding reporting unit in the semiconductor device through the reporting bus to the controller to indicate a status of the logic unit. The controller is configured to, in response to receiving the information associated with the logic unit, update corresponding status information of the logic unit based on the status of the logic unit.