Abstract: Systems, methods, circuits, and apparatuses for managing integrated circuits in memory devices are provided. In one aspect, an integrated circuit includes: a latch circuit including a latch and a sensing transistor coupled to the latch, and a compensation circuit coupled to the sensing transistor. The sensing transistor includes a gate terminal coupled to a sensing node and an additional terminal coupled to the compensation circuit, and the compensation circuit is configured to apply a control voltage to the additional terminal to compensate for a variation of a threshold voltage of the sensing transistor.

Abstract: A circuit for in-memory multiply-and-accumulate functions includes a plurality of NAND blocks. A NAND block includes an array of NAND strings, including B columns and S rows, and L levels of memory cells. W word lines are coupled to (B*S) memory cells in respective levels in the L levels. A source line is coupled to the (B*S) NAND strings in the block. String select line drivers supply voltages to connect NAND strings on multiple string select lines to corresponding bit lines simultaneously. Word line drivers are coupled to apply word line voltages to a word line or word lines in a selected level. A plurality of bit line drivers apply input data to the B bit lines simultaneously. A current sensing circuit is coupled to the source line.

Abstract: Systems, methods, circuits, and apparatuses for managing integrated circuits in memory devices are provided. In one aspect, a system includes a semiconductor device configured to store data, and a controller communicatively coupled to the semiconductor device. The controller is configured to send, to the semiconductor device, an instruction requesting transmission of the data; in response to determining that a predetermined time duration has elapsed after sending the instruction, initiate transmission of a read enable signal to the semiconductor device; receive, from the semiconductor device, a data strobe signal; and, in response to determining that the data strobe signal has a frequency matching a frequency of the read enable signal, read the data from the semiconductor device.

Abstract: A memory device includes a stack structure, a channel pillar, a first conductive pillar, a second conductive pillar, a charge storage structure, a first conductive layer, a second conductive layer, and an insulating liner layer. The stack structure is located on a dielectric substrate and includes gate layers and insulating layers alternately stacked with each other. The channel pillar extends through the stack structure. The first conductive pillar and the second conductive pillar are located in and electrically connecting with the channel pillars. The charge storage structure is located between the gate layers and the channel pillar. The first conductive and the second conductive layers are located between the stack structure and the dielectric substrate. The second conductive layer is closer the channel layer than the first conductive layer. The insulating liner layer separates the second conductive layer from the channel layer and the first conductive layer.

Abstract: A TCAM comprises a plurality of first search lines, a plurality of second search lines, a plurality of memory cell strings and one or more current sensing units. The memory cell strings comprise a plurality of memory cells. The current sensing units are coupled to the memory cell strings. In a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units. Each memory cell includes a first transistor and a second transistor. Gates of the first and second transistors are coupled to a corresponding first search line and a corresponding second search line.

Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

Abstract: A semiconductor structure including a substrate and a pad structure is provided. The pad structure is located on the substrate. The pad structure includes material pairs and pads. The material pairs are stacked on the substrate to form a stair step structure. Each of the material pairs includes a conductive layer and a dielectric layer located on the conductive layer. Each of the pads includes a conductive pillar and a pad layer. The conductive pillar is embedded in the material pair and is connected to the conductive layer of the material pair. The pad layer is located on the conductive pillar.

Abstract: A processor receives, from an input device, input data for processing. Upon determining that the input data corresponds to an artificial intelligence (AI) application, the processor generates an AI command for performing read or write operations for a memory device that is configured to store data for a plurality of applications including the AI application, the AI command characterized by an operational code and including information about one or more components of the AI application corresponding to the input data. The processor sends the AI command and the input data to a storage controller managing the memory device, wherein the read or write operations for the memory device are performed by the storage controller using the operational code and the information included in the AI command. The processor receives, from the storage controller, a result of the read or write operations performed on the memory device.

Abstract: A storage device and a data accessing method are disclosed, wherein the storage device includes a memory circuit and a control circuit. The memory circuit includes a plurality of multi-level cells, and each of the multi-level cells is configured to store at least a first bit, a second bit and a third bit in at least a first page, a second page and a third page. The control circuit is configured to read the first bits according to a one-time reading operation related to the first bits, read the second bits according to M-times reading operations related to the second bits, and read the third bits according to N-times reading operations related to the third bits, wherein the difference between M and N is less than or equal to one.

Abstract: Methods, systems and apparatus for memory devices with multiple string select line (SSL) cuts are provided. In one aspect, a semiconductor device includes: a three-dimensional (3D) array of memory cells and a plurality of common source lines (CSLs) configured to separate the 3D array of memory cells into a plurality of portions. Each portion of the plurality of portions is between two adjacent CSLs and includes a plurality of conductive layers separated from each other by insulating layers and a plurality of vertical channels arranged orthogonally through the plurality of conductive layers and the insulating layers, each of the plurality of vertical channels including a string of memory cells. A top part of each portion of one or more portions includes at least two SSL cuts configured to separate the portion into multiple independent units, and each of the independent units is selectable by a corresponding SSL of multiple SSLs.

Abstract: Memory devices are implemented within a vertical memory structure, comprising a stack of alternating layers of insulator material and word line material, with a series of alternating conductive pillars and insulating pillars disposed through stack. Data storage structures are disposed on inside surfaces of the layers of word line material at cross-points of the insulating pillars and the layers of word line material. Semiconductor channel material is disposed between the insulating pillars and the data storage structures at cross-points of the insulating pillars with the layers of word line material. The semiconductor channel material extends around an outside surface of the insulating pillars, contacting the adjacent conductive pillars on both sides to provide source/drain terminals.

Abstract: A memory such as a 3D NAND array, having a page buffer having page buffer cells coupled to bit lines has a search word input such as a search word buffer coupled to word lines. A circuit, such as string select gates, is provided to connect a selected set of memory cells in the array to the page buffer. The page buffer includes sensing circuitry configured to apply a match sense signal to a latch in a plurality of storage elements for a stored data word and an input search word. Logic circuitry uses storage elements in the plurality of storage elements of the page buffer to accumulate the match sense signals output by the sensing circuitry over a sequence matching a plurality stored data words to one or more input search words. A match for a search is based on a threshold and the accumulated match sense signals.

Abstract: A method of fabricating a memory device includes patterning a stacked structure to form a first staircase structure and a second staircase structure; patterning a conductive layer under the stacked structure to form a first slit trench along a first direction; forming a first dielectric layer overlaying the first staircase structure and the second staircase structure and filling into the first slit trench, wherein the first dielectric layer filled in the first slit trench forms a first slit; patterning the first dielectric layer, the stacked structure, and the conductive layer to form multiple second slit trenches, wherein the second slit trenches along a second direction perpendicular to the first direction; performing a replacement process to replace the sacrificial layers with multiple gate conductive layers; and filling a second dielectric layer in the second slit trenches to form multiple second slits.

Abstract: A 3D AND flash memory device includes a gate stack structure, a channel pillar, a first and a second conductive pillars, a charge storage structure, and a protective cap. The gate stack structure is disposed on a dielectric substrate and includes gate layers and insulating layers alternately stacked with each other. The channel pillar penetrates through the gate stack structure. The first and the second conductive pillars are disposed in the channel pillar and penetrate through the gate stack structure, and the first and the second conductive pillars are separated from each other and each connected to the channel pillar. The charge storage structure is disposed between the gate layers and a sidewall of the channel pillar. The protective cap covers at least a top surface of the channel pillar and isolates the first conductive pillar and the second conductive pillar from a top gate layer of the gate layers.

Abstract: In one embodiment of this disclosure, an integrated circuit includes at least one first memory block, at least one second memory block, and a pad disposing area. The first memory block and the second memory block are respectively disposed at two sides of the integrated circuit, wherein each of the first memory block and the second memory block includes a memory cell array having a three-dimension structure. The first memory block and the second memory block are symmetrically disposed about the pad disposing area. A plurality of pads are disposed in the pad disposing area. The pads are respectively electrically coupled to the first memory block and the second memory block.

Abstract: A data serializer, a latch data device using the same and a controlling method thereof are provided. The data serializer includes at least one data buffer and a de-skew buffer. The data buffer at least receives an inputting data and a controlling signal. An outputting signal and a complementary outputting signal, which is complementary to the outputting signal, are formed when the controlling signal is at a predetermined level. The de-skew buffer receives the complementary outputting signal to accelerate or slow down forming the outputting signal.

Abstract: A three-dimensional memory device, such as 3D AND Flash memory device, includes a first page buffer, a second page buffer, a sense amplifier, a first path selector, and a second path selector. The first page buffer and the second page buffer are respectively configured to temporarily store a first write-in data and a second write-in data. The first path selector couples the sense amplifier or the first page buffer to a first global bit line according to a first control signal. The second path selector couples the sense amplifier or the second page buffer to a second global bit line according to a second control signal.

Abstract: A device which can be implemented on a single packaged integrated circuit or a multichip module comprises a plurality of non-volatile memory cells, and logic to use a physical unclonable function to produce a key and to store the key in a set of non-volatile memory cells in the plurality of non-volatile memory cells. The physical unclonable function can use entropy derived from non-volatile memory cells in the plurality of non-volatile memory cells to produce a key. Logic is described to disable changes to data in the set of non-volatile memory cells, and thereby freeze the key after it is stored in the set.

Abstract: A chip includes a substrate and a plurality of functional units on the substrate, in which each of the functional units has its own set of pads. The functional units are physically connected and there is no scribe line passes through the chip. A semiconductor structure having the chip is also disclosed.

Abstract: A memory structure and a manufacturing method for the same are provided. The memory structure includes a charge trapping layer, a first silicon oxynitride tunneling film and a second silicon oxynitride tunneling film. The first silicon oxynitride tunneling film is between the charge trapping layer and the second silicon oxynitride tunneling film. A first atom concentration ratio of a concentration of a nitrogen atom to a total concentration of an oxygen atom and the nitrogen atom of the first silicon oxynitride tunneling film is 10% to 50%. A second atom concentration ratio of a concentration of a nitrogen atom to a total concentration of an oxygen atom and the nitrogen atom of the second silicon oxynitride tunneling film is 1% to 15%. The concentration of the nitrogen atom of the second silicon oxynitride tunneling film is lower than that of the first silicon oxynitride tunneling film.