Abstract: A method is provided for fabricating aluminum alloy sputtering targets having fine precipitates of a second phase material in small, randomly oriented and uniform grains. The method provided includes the steps of homogenizing the aluminum alloy billet at a temperature above the solidus temperature, deforming the billet, recrystallizing the billet at a temperature below the solidus temperature, and cryogenically deforming the billet. This minimizes second-phase precipitate size and prevents the formation of cubic structures, thereby generating fine uniform grain sizes having random orientation.

Abstract: Chromium-tantalum oxides (Cr-TaO.sub.x), including chromium-tantalum pentoxide (Cr-Ta.sub.2 O.sub.5), chromium-tantalum tetrioxide (Cr-Ta.sub.2 O.sub.4 or Cr-TaO.sub.2), sputtering targets containing them, and their manufacture are disclosed. The targets are characterized by high density, uniform TaO.sub.x distribution, low impedance and stable plasma during the sputtering. The Cr-Ta oxides are used as a thin film sublayer to improve the coercivity and other characteristics of magnetic recording media deposited on metallic or non-metallic substrates used in hard disks for data storage.

Abstract: Using plasma enhanced chemical vapor deposition, various layers can be deposited on semiconductor substrates at low temperatures in the same reactor. When a titanium nitride film is required, a titanium film can be initially deposited using a plasma enhanced chemical vapor deposition wherein the plasma is created within 25 mm of the substrate surface, supplying a uniform plasma across the surface. The deposited film can be subjected to an ammonia anneal, again using a plasma of ammonia created within 25 mm of the substrate surface, followed by the plasma enhanced chemical vapor deposition of titanium nitride by creating a plasma of titanium tetrachloride and ammonia within 25 mm of the substrate surface. This permits deposition film and annealing at relatively low temperatures--less than 800.degree. C.

Abstract: A single phase W-Ti sputter target and a method of manufacturing the target are disclosed. The target is produced by mixing powders of tungsten and titanium and subjecting the mixed powders to a pressing operation for a time, temperature and pressure sufficient to achieve a mutual solid solution of W and Ti, forming single .beta.(Ti,W) phase. The single phase sputtering target emits much less particulate during sputtering than conventional multiphase W-Ti targets of comparable density and composition.

Abstract: The present invention relates to high purity chromium metal suitable for deposition onto a semiconductor wafer or other substrate by sputtering. The high purity chromium metal is produced by a process that increases productivity, expands melting capability and provides consistent high purity chromium by reducing contamination by the dissolution of crucible material. The present invention provides high purity chromium by the addition of chromium oxide (Cr.sub.2 O.sub.3) to molten chromium to control oxygen content in the chromium thereby producing high purity chromium ingots and protecting the ceramic crucibles from chemical attach by the liquid chromium.

Abstract: Magnetic domains in a thin magnetic film on information storage devices are aligned during manufacture of the device, preferably at the time the film is deposited onto a substrate by sputtering. A compact magnetic field generator generates a parallel magnetic field across the substrate with a magnet assembly that is not larger than approximately twice the size of the substrate or not larger than the sputtering target cathode assembly. The magnet assembly includes an interior magnet with poles at opposite ends of the substrate and two side magnets having pole pieces spaced by an air gap from the poles of the interior magnet. The interior magnet preferably includes a central magnet and two intermediate magnets, which share the same pole pieces as the central magnet. The interior magnets are located between the central magnet and the side magnets.

Abstract: A method of forming a sputter target/backing plate assembly comprises the steps of: providing a target fabricated from a first material having a coefficient of thermal expansion; providing a backing plate fabricated from a second material having a coefficient of thermal expansion; providing a block fabricated from a third material having a coefficient of thermal expansion; positioning the block on one side of the backing plate; positioning the target on the other side of the backing plate; and subjecting the target, backing plate and block to elevated temperature and pressure to bond the target, backing plate and block together. The third material is selected so as to have a coefficient of thermal expansion which counteracts the effects of the coefficients of thermal expansion of the first and second materials. The third material may be selected so as to have a coefficient of thermal expansion which is approximately the same as the coefficient of thermal expansion of the first material.

Abstract: A sputtering target protection device for covering and protecting the precisely machined and engineered surface of a sputtering target assembly during shipment, intermediate handling and installation of the target assembly. The protection device includes a top wall preferably having the same general circumferential configuration as the top surface of the target, and an integral skirt which depends from the top wall. The depending skirt is adapted to frictionally engage a side surface of the sputtering target while the top wall of the protection device is spaced from the sputtering surface to cover and protect the surface during shipment and installation of the target assembly. The protection device is designed to be single-use and disposable. Methods are also disclosed.

Abstract: This invention is directed to an improved method for making a bonded sputter target/backing plate assembly as well as assemblies produced therefrom. The assembly includes a sputter target having a bonding surface which is bonded to the bonding surface of an underlying backing plate. The method of forming the bonded assembly includes treating one of the bonding surfaces, either by roughening at least a portion of one of the bonding surfaces so as to produce a roughened portion having a surface roughness (R.sub.a) of at least about 120 micro inches, or by drilling a plurality of holes in one of the bonding surfaces. The method further includes orienting the sputter target and backing plate to form an assembly having an interface defined by the bonding surfaces, subjecting the assembly to a controlled atmosphere, heating the assembly, and pressing the assembly so as to bond the bonding surfaces.

Abstract: A fixture for holding a plurality of masking elements while the masking elements are being baked to remove impurities is disclosed. The masking elements are used to mask dies used for forming sputtering targets used to deposit thin films on a substrate. The fixture includes a housing having first and second end walls connected between first and second side walls wherein the first and second end and side walls form an interior aperture. In addition, the fixture includes a several slots which are formed in the first and second side walls wherein each of the slots are suitable for holding a single masking element. In particular, the interior aperture is of a sufficient size and the slots are positioned such that suitable air circulation is provided between each of the masking elements to expose the masking elements to a predetermined temperature suitable for removing the impurities from the masking elements.

Abstract: A reusable aluminum sputter target support tube which is bonded to a replaceable sputter target by variable polarity plasma arc welding and a method of manufacturing such reusable sputtering target assemblies.

Abstract: A method of fabricating an alloy sputtering target having fine precipitates of the second phase material and small, randomly oriented and uniform grains. The new method includes solution treatment to minimize second-phase precipitate size, cryo-deformation to prevent the formation of cubic structures and recrystallization to generate fine uniform grain sizes having a random orientation.

Abstract: A target assembly in which the sputtering material is not soldered or otherwise metallurgically bonded to a backing plate. Rather, the target, which is homogeneously manufactured of sputtering material, is mechanically coupled (e.g., with bolts) to an adapter, which is itself permanently affixed to the chamber. As a result, the target can be easily uncoupled from the chamber and replaced, without also requiring removal and replacement of a backing plate.

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction.

Abstract: Ultra high purity materials, particularly metallic materials such magnesium and similarly high volatility materials, are produced by a vacuum distillation method and apparatus to increase purity by approximately five hundred times in a single step. For example, magnesium purity, exclusive of zinc content, is increased from 99.95% to greater than 99.9999%. A distillation column is formed of a high purity (less than 10 ppm ash) graphite, and includes a crucible, a vertical condenser in which horizontal high purity graphite baffles are selectively located at a plurality of levels, for example at nine levels. The column is contained in a three-zone resistance furnace that is controlled to heat the crucible to evaporate the material, maintain the condenser immediately above the crucible to above the boiling point of the material, and maintain the portion of the column thereabove at below the boiling point of the material, preferably with the temperature gradually decreasing with the height of the column.

Abstract: An apparatus and process for making metal oxide sputtering targets from volatile and thermally unstable metal oxide powder by enveloping the metal oxide powder in at least one layer of a barrier material while the powder is hot-pressed using a graphite die assembly.

Abstract: A target assembly in which the sputtering material is not soldered or otherwise metallurgically bonded to a backing plate. Rather, the target, which is homogeneously manufactured of sputtering material, is mechanically coupled (e.g., with bolts) to an adapter, which is itself permanently affixed to the chamber. As a result, the target can be easily uncoupled from the chamber and replaced, without also requiring removal and replacement of a backing plate.

Abstract: A sputtering target is pretextured, prior to being subjected to the initial sputter precleaning and use in a sputter processing apparatus, by artificially roughening the sputtering surface of the target to produce a texture which functions, when used in the sputter coating of substrates, in a manner equivalent to the surface of a target roughened by an hour or more of a sputter burn-in process. The surface is textured by the machining of grooves or other irregular microstructure therein, by chemical etching, by mechanical abrading, or by another means other than sputter processing. A 0.05 to 3.0 millimeter texture size such as achieved with annular V-grooves 0.025 inches deep and spaced at 0.0625 inches is preferred.

Abstract: Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of zquartz material.

Abstract: A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400.degree. C. to about 500.degree. C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.