Abstract: Titanium films are nitrided at temperatures less than 650.degree. C., and preferably between 400.degree. C. and 500.degree. C., by treating the titanium film with a plasma formed from a nitriding gas at elevated temperatures. The plasma is created by subjecting the nitriding gas to RF energy, preferably an electrode having a frequency of 13.56 MHz or less. The reaction temperature can be reduced by lowering the plasma frequency to less than 500 KHz. This provides for nitridization at temperatures of 480.degree. C. and lower.

Abstract: Magnetic domains in a thin magnetic film on information storage devices are aligned during manufacture of the device, preferably at the time the film is deposited onto a substrate by sputtering. A compact magnetic field generator generates a parallel magnetic field across the substrate with a magnet assembly that is not larger than approximately twice the size of the substrate or not larger than the sputtering target cathode assembly. The magnet assembly includes an interior magnet with poles at opposite ends of the substrate and two side magnets having pole pieces spaced by an air gap from the poles of the interior magnet. The interior magnet preferably includes a central magnet and two intermediate magnets, which share the same pole pieces as the central magnet. The interior magnets are located between the central magnet and the side magnets.

Abstract: Ultra high purity materials, particularly metallic materials such as magnesium and similarly high volatility materials, are produced by a vacuum distillation method and apparatus to increase purity by approximately five hundred times in a single step. For example, magnesium purity, exclusive of zinc content, is increased from 99.95% to greater than 99.9999%. A distillation column is formed of a high purity (less than 10 ppm ash) graphite, and includes a crucible, a vertical condenser in which horizontal high purity graphite baffles are selectively located at a plurality of levels, for example at nine levels. The column is contained in a three-zone resistance furnace that is controlled to heat the crucible to evaporate the material, maintain the condenser immediately above the crucible to above the boiling point of the material, and maintain the portion of the column thereabove at below the boiling point of the material, preferably with the temperature gradually decreasing with the height of the column.

Abstract: A semi conductor wafer processing apparatus has a wafer supporting susceptor having a sealing surface, a susceptor drive shaft for connection to the susceptor also having a sealing surface, a seal disposed between the susceptor and drive shaft sealing surfaces having a rigid metallic core and a ductile metallic coating on the core, and fasteners connecting the susceptor to the drive shaft and compressing the seal between the susceptor and drive shaft sealing surfaces. The seal retains sealing capability upon being subjected to changes in temperature.

Abstract: Method and apparatus for cooling a sputtering target is provided. The method comprises the steps of providing a sputtering target and a cooling surface in operable conductive heat transfer contact with the sputtering target, introducing a cooling liquid onto the cooling surface to conductively remove heat from the sputtering target, allowing at least a portion of the cooling liquid to change phase into a vapor, and preventing a continuous insulating vapor layer from forming on the cooling surface to ensure continuing conductive heat transfer from the target to the cooling surface so as to avoid overheating of the target.

Abstract: A shade is disposed on the inner wall of an inductively coupled plasma chamber, covering a protected zone of the wall generally opposite to the inductive coil driving the chamber, preventing accumulation of material sputtered from a wafer in this zone, and thus restricting closed paths for eddy current flow along the chamber wall, improving inductive coupling of electrical power to the plasma in the chamber.

Abstract: A titanium nitride film is annealed at a temperature less than 500.degree. C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take pan in the surface reaction.

Abstract: An apparatus for efficiently heating a wafer within a CVD environment isolates the heating element of the apparatus from the CVD environment and includes a susceptor body defining a sealed space therein for containing the heating element and a surface coupled to the heating element for supporting and heating the wafer. The susceptor space is sealed from the CVD environment and is vacuumed to a first pressure. Heating gas is delivered through a space extending through the susceptor body which is sealed from the susceptor space containing the heating element and is vacuumed to a second pressure which is preferably less than the CVD reaction pressure to vacuum clamp a wafer to the susceptor. The heating gas delivery space is formed by an elongated sheath surrounding a hollow wafer lift tube and the sheath is sealed at one end to the backplane of the susceptor and at the other end to the tube. The wafer lift tube moves up and down within the sheath to lift a wafer.

Abstract: Apparatus for sputter etching a substrate includes a processing chamber with a plasma source coupled to the top of the processing chamber to seal the chamber and create a plasma therein. The plasma source comprises a dielectric plate having a generally centered pocket with a concave outer surface and a convex inner surface which physically extends into the processing chamber toward a substrate. An inductive coil is positioned outside the chamber generally inside the pocket and adjacent the concave surface and is preferably contoured to conform to the concave outer surface to form an inductive source relative to the substrate. The contoured inductive coil couples energy through the pocket to create a high density uniform plasma of ionized particles proximate a substrate in the chamber.

Abstract: An improved air spring arrangement for an internal combustion engine having three valves per cylinder which are disposed in surrounding relationship to a spark plug. The air spring arrangement is formed by a recess formed in the cylinder head that encompasses each of the valve stems and an insert piece that is inserted into this recess and which defines the bores for the respective air chambers. The supply and relief passages for the air chambers are formed in the insert piece by drilled passages which have a V-shaped configuration to provide a more compact assembly and a less complicated cylinder head arrangement.

Abstract: A target assembly in which the sputtering material is not soldered or otherwise metallurgically bonded to a backing plate. Rather, the target, which is homogeneously manufactured of sputtering material, is mechanically coupled (e.g., with bolts) to an adapter, which is itself permanently affixed to the chamber. As a result, the target can be easily uncoupled from the chamber and replaced, without also requiring removal and replacement of a backing plate.

Abstract: A method and apparatus for sputter depositing aluminum onto a semiconductor substrate to fill micron and submicron vias utilizes ultrasonic energy to ensure adequate filling of the vias. The semiconductor is supported on a block and heated and subjected to ultrasonic energy greater than 25 kHz as aluminum is sputter deposited onto the substrate surface. The frequency of the ultrasonic energy is varied from 35 to 42 kHz as the aluminum is deposited in order to avoid standing wave or node formation along the substrate surface. This permits for an efficient high quality application of aluminum and filling of vias on a semiconductor substrate.

Abstract: A carrousel type wafer processing machine in which wafers are held in vertical orientations in holders on a rotatable plate and sequenced through a plurality of processing stations for processing, such as by the application of a sputtered film thereto, is provided with a vacuum front end module that transfers wafers between cassette modules in which the wafers are horizontally disposed and a loading and unloading station of the processing machine, through a transfer chamber. The transfer chamber includes a wafer transfer arm, an aligning station, a preheating and degassing station, a cooling station preferably combined with the preheating station, and an uprighting station from which wafers are exchanged with the processing machine. The arm moves unprocessed wafers individually from a cassette module to the aligner, then to the preheating station, then to the uprighting station. The arm also moves processed wafers from the uprighting station, to the cooling station and to a cassette module.

Abstract: A sputtering target comprises a disc machined from a first piece of target grade material, having a front sputtering face and a rear face opposite. The sputtering face and target material erode during use to define a final sputtered face contour and a residual target thickness t measured from the rear face. A hub is machined from a second piece of material and is secured to the rear face of the disc. The securement device utilizes a depth of target material measured from the rear face which minimizes the thickness t in a region adjacent the hub so as to maximize the amount of the target grade material sputterable before in the region before encountering the securement device. In another form, the disc and hub are forged from a single starting slug of target grade material.

Abstract: A sputtering target assembly in which the region of attachment between the sputtering target and the backing plate has varying stiffness, thereby reducing stresses in the target during sputtering. In the region of attachment, the backing plate has varying thickness, for example a smooth taper. Alternatively, the backing plate may include structures which affect the stiffness of the backing plate in the region of attachment. These structures may be defined by machining, molding or forging during manufacture of the backing plate, or by machining or drilling voids in the backing plate. As a second alternative, the bonding material used to attach the sputtering target and the backing plate may have a varying stiffness across the region of attachment.

Abstract: A method of controlling the crystal orientation dependent properties, such as residual stress, barrier layer effectiveness and resistivity, of reactively sputtered films such as titanium nitride, provide a method of optimizing the design parameters of the deposition apparatus and a method of utilizing the apparatus to produce coated Wafers. A sputtering target is maintained spaced from a wafer with a rotating magnetic field produced by a magnet rotating behind the target. An auxiliary magnet is provided at the wafer to unbalance the target magnetic field and allow ion flux from the plasma to reach the substrate. A film is deposited and the properties of the resulting film measured, particularly, in the case of titanium nitride deposition, the ratio of <200> to <111> crystal orientation, as well as the ratio uniformity. The auxiliary magnet configuration and target to wafer spacing are varied and the ratio remeasured.

Abstract: Gas delivery apparatuses and methods utilize a housing containing three thermal zones through which a gas travels from a source to a reaction chamber. Reactant gases vaporized within the first thermal zone travel in a line through the succeeding thermal zones. In each successive thermal zone, the gas is heated at a higher temperature to prevent condensation within the line. The gas line is heated in the thermal zones by mounting in-line components to heater plates which are controlled to heat the in-line components at the temperatures associated with the thermal zone. The third thermal zone is heated at a substantially higher temperature than the first and second thermal zones in order to prevent formation of an adduct within the gas line. In one embodiment, the gas line extends into the reaction chamber through a heater block which uniformly heats the gas line at a temperature higher than temperatures of the thermal zones to further prevent condensation and prevent the formation of an adduct.

Abstract: An expendable target of sputter coating material is provided having secured thereto a storage medium having recorded thereon, in machine readable indicia, information relating to a characteristic of the target. The information preferably includes target identifying information and may also include information relating to the target composition, the history of the use of the target, and other information usable by the apparatus to automatically set machine parameters or to record process information. Information, particularly of the use of the target, may be updated and written to a medium on the target or target assembly, or to a machine readable medium which may be affixed to the target assembly when the target is removed. The target is preferably one piece with a cooling surface opposite its sputtering surface, and having the indicia fixed to the sputtering material at the periphery or rim of the target.

Abstract: A magneto-optical sputter target having a composition comprising at least one rare earth element and at least one transition metal, with a structure which includes a transition metal constituent and a finely mixed alloy constituent of a rare earth phase and a rare earth/transition metal intermetallic compound. The structure of the present target contains a minimum of the intermetallic compound. A method of producing the present sputter target includes mixing particles of the transition metal constituent (preferably only alloyed transition metals) with particles of the finely mixed alloy to produce a powder blend and subjecting the powder blend to a pressing operation in an oxidizing inhibiting environment for a time and at a temperature and pressure which minimizes the rare earth/transition metal intermetallic compound content of the target.