Abstract: A wafer processing cluster tool, having one or more load-locks, is provided with one or more batch preheating modules that receive wafers only from the cluster tool transport module at the internal vacuum pressure of the machine. The loading, unloading, handling and processing of wafers in the machine can occur while other wafers are being preheated. The preheat module has a vertically moveable rack and is loaded with various sized batches of wafers with no vacant positions between them. Wafer shaped shields may occupy positions adjacent top and bottom wafers to cause them to heat the same as other wafers in the rack. Infrared lamps positioned outside of quartz windows heat wafers in the preheat module. The rack may rotate to improve heating uniformity. Temperature sensors, such as pyrometers, that do not contact the wafers being preheated, measure temperature for control of the heating of the lamps.

Abstract: A pressure sealed chamber such as a load lock for a apparatus for processing substrates is provided with a guide plate spaced from a substrate supported therein so as to form a gap which covers the substrate surface to be protected from particulate contamination. During the filling of the chamber and during the evacuation of the chamber, by either pumping or venting, clean gas is introduced through an orifice in the center of the plate so as to flow outwardly from the edge of the gap at a pressure sufficient to deflect or otherwise reduce the number of turbulent gas borne particulates in the chamber from entering the gap and contaminating the surface to be protected of the substrate. During the filling of the chamber, all or some of the gas filling the chamber is introduced through the gap. During the evacuation of the chamber, gas is introduced through the gap at a flow rate less that of the evacuating gas.

Abstract: A method of bonding a sputtering target to a backing member or plate for subsequent use in a sputtering operation. A target and a backing plate are first provided and one face of each of the target and backing plate are wetted with solder. The target and backing plate are then submerged in a solder bath, and the wetted faces of the target and backing plate are pressed into contact. The target and backing plate are then removed from the solder bath and while maintaining them pressed together, the solder interface therebetween is cooled directionally by causing cooling to occur from the center of the solder interface radially outwardly toward the periphery. The lowermost of the target and backing plate is provided with a circumferential lip adjacent the periphery of the solder interface.

Abstract: An improved, extended lifetime collimator for cathode sputtering has a plurality of passages which taper longitudinally from a target side of the collimator to a wafer side of the collimator. This longitudinal tapering reduces the adverse effects on collimator useful life and wafer deposition rate which are generally caused by the accumulation of sputtered particles on exposed surfaces on the target side of the collimator. Compared to prior collimators, this collimator may be used to sputter coat a greater number of wafers before replacement or cleaning is necessary, thereby enhancing throughput capability.

Abstract: A pressure sealed chamber such as a load lock for a apparatus for processing substrates is operated with a guide plate spaced from a substrate supported therein so as to form a gap which covers the substrate surface to be protected from contamination by moisture condensing in the chamber during the rapid evacuation thereof. During the evacuation of the chamber, by either pumping or venting, clean dry gas is introduced through an orifice in the center of the plate so as to flow outwardly from the edge of the gap at a pressure sufficient to displace or otherwise prevent gas borne moisture condensate in the chamber from entering the gap and contaminating the surface to be protected of the substrate. During the evacuation of the chamber, gas is introduced through the gap at a flow rate less that of the evacuating gas.

Abstract: A plasma confining magnetic field is generated over the sputtering region of a sputtering target with a critical field line which determines the shape of the plasma. The critical field line is progressively flattened over the course of the life of the target as the target erodes. Preferably, the magnet is configured with poles spaced around the portion of the target below the sputtering region to provide a magnetic field that flattens as its strength decreases. A regulated power supply maintains a regulated power level that is increased as the target erodes to maintain a constant deposition rate. The voltage delivered by the power supply is maintained at or above a constant level by progressively decreasing the current to an electromagnet to progressively reduce the field strength and flatten the field. As a result of the invention, the erosion groove of the target is broadened and the number of wafers coated by the target during its life is increased.

Abstract: A sputtering module incorporated into a wafer processing system includes an evacuatable housing connectable to one or more other evacuatable housings and a wafer handling turret adapted to receive a wafer in horizontal orientation at a load/unload position and rotate the wafer 180.degree. about an inclined axis into vertical orientation at a sputtering position across from a sputtering target. After sputter coating, the wafer handling turret again rotates 180.degree. about the inclined axis to rotatably return the wafer to the horizontal load/unload position, whereupon the wafer is lowered to a horizontal receiving position for subsequent retrieval by an arm extendible into the module from an adjacently situated housing. The wafer handling turret includes three wafer holding rings and a disc-shaped shutter that is rotatably located in front of the target during precleaning.

Abstract: A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanent or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved.

Abstract: A sputter coating apparatus displays set and alternative machine parameters, entered or calculated from entered or measured data, for selection by the operator. The apparatus performs a sputter coating process to produce sputter coated articles in accordance with the selected machine parameters. Process parameters familiar to the person creating the process, such as desired coating thickness and desired deposition rate, may be entered by the operator. Measured data such as actual coating thickness at a plurality of points on a previously processed wafer may be entered by an operator or automatically measured from a wafer. Alternative machine parameters such as target sputtering power may be entered by an operator or calculated from entered process parameters or measured data. The operator selects and initiates a process in accordance with the selections by entering commands.

Abstract: A bias sputter coating apparatus is provided with a cathode target assembly having a central electrode which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated articles such as semiconductor wafers. The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.

Abstract: A three step planarization method for planarizing aluminum or aluminum alloy in via and trench features of a wafer includes first, high rate deposition in the absence of heat, followed by low rate deposition in the presence of heat, and finally, high rate deposition with continued supply of heat to the wafer. Bias may be used. Deposition is preferably continuous and uninterrupted from the beginning of the first step until the end of the third step. The first step is limited in duration in order to produce a relatively thin layer which geometrically covers the inside surfaces of the feature. The duration of the second step is selectable, but is preferably based upon the temperature of the heat applied to the wafer and a characteristic size of the feature. The third step deposition completes the thickness of the film.

Abstract: A magnetron sputtering method and apparatus employing a one-piece annular target having a concave continuously smooth surface with an inwardly facing portion close to and surrounding the outer edge of a stepped wafer provides a sputtering surface with areas facing the differently facing surfaces of the wafer steps. Two concentric erosion zones on the target surface are independently energized at different electrical parameter values by synchronizing the power applied to the single target with switched activation of plasmas overlying the respective target regions which define the erosion zones. The electrical parameters and the geometry are established so as to uniformly coat the differently facing surfaces of the stepped wafer. During part of the duty cycle during which each target region is energized, parameters may be measured. Such parameters may be those which vary with changes in geometry as for example may be due to target erosion.

Abstract: An apparatus and method for moving a plurality of wafer-like articles such as semiconductor substrates back and forth between a carrier and a processing chamber maintained in an interior atmosphere isolated from that of the carrier. A translating arm pivotal about its center with a wafer engaging vacuum chuck at each end loads and retrieves articles from the carrier and exchanges articles at a support. The support centers an article thereon and translates it linearly to or from a load lock chamber. The chamber opens and closes about the article on the support to maintain isolation of the environments as the article passes therebetween.

Abstract: The apparatus is provided with a main chamber divided into two chamber halves by a rotatable index plate. The plate rotates through a load lock station, through which wafer-like articles are inserted into and removed from the main chamber, and a series of processing stations, at each of which a process such as etching or sputter coating can be performed simultaneously upon different objects and sequentially upon the same objects. Each processing chamber is isolatable from the main chamber and other processing chambers during processing so that different substrates can be processed simultaneously at the various stations using different processes without cross contamination. Substrate holders resiliently mounted on the plate move transversely when compressed between a cup shaped back-plane device and the main chamber wall to separately seal each of the processing chambers from the main chamber.

Abstract: A magnetron sputtering apparatus and method, in which the ion flux bombarding the substrate is made uniform. Countermagnet means are chosen and positioned such that the vertical components of the countermagnet field are of opposite direction and equal magnitude to the vertical components of the cathode magnet in the vicinity of the substrate. Thus, the cathode magnetic field lines become substantially flat in the vicinity of the substrate and do not cause the ion flux to be distributed on the substrate surface in a non-uniform manner. Measurement of ion current density on the substrate surface during operation of the invention reveals that the invention provides substantially constant flux at all points on the substrate surface.

Abstract: An improved cathode and sputtering target design for sputter coating, permitting operation with larger cathodes and at higher power levels than heretofore possible. The cathode and target assembly includes a cathode body, a target holder, and a sputtering target. The cathode body functions as a magnetic pole piece, a portion of the cooling system, and a mechanical stabilizer for the target. The target holder also provides cooling, by means of cooling passages and by intermeshing cooling means in contact with the target. The sputtering target has an arch-like face that promotes a controlled plastic deformation in a preselected direction, so that heat-induced expansion during operation results in the target being urged into forceful, intimate contact with at least two cooled surfaces.

Abstract: A method of producing ceramic items which does not necessitate the use of high vapor pressure organic solvents, aqueous solvents, binders or plasticizers. A monomer is used as a vehicle for deflocculation of the ceramic powder and, after forming, is polymerized to form a matrix which binds the ceramic particles together.

Abstract: A substrate support electrode for use in plasma processing equipment has a book-shaped prismatic body containing a magnet core with flange-like pole pieces at each end to provide a longitudinal magnetic field wrapped around the electrode body. An auxiliary field-shaping magnet spaced from a substrate support face of the electrode body, with each of its poles adjacent to the pole piece electrode body with each of its poles adjacent to the of like polarity of the electrode, flattens the magnetic field adjacent to the electrode support surface to produce a thin plasma of substantially uniform thickness close to the electrode surface.

Abstract: The film deposition rate of metallic compounds onto a substrate in a vacuum chamber by reactive sputtering or reactive ion plating is significantly increased by providing a substrate support with spaced apart magnetic poles to create a magnetic field having lines of force which leave the support, extend across a surface of the substrate exposed to a metallic coating source and re-enter the support to enclose the exposed surface in a localized magnetic electron-trapping field. A reactive gas is fed into the chamber, and a bias voltage is applied to the substrate support sufficient to create a dense glow discharge of ionized reactive gas closely adjacent to the substrate surface. The reactive gas ions react with metallic particles deposited on the exposed substrate surface from the coating source to form a film of the desired metallic compound.

Abstract: A cathode assembly for use in a magnetron sputtering system, the system having a cathode assembly with parallel elongated target segments which are formed substantially of a material which is desired to be sputter-deposited onto a substrate. The elongated target segments are each provided with a material removal surface which is inclined toward the other segment with respect to the plane of the substrate. Such inclination permits the material which is removed from the target bars to be focused onto a relatively narrow area, thereby improving the efficiency of the sputtering operation and reducing machine down-time for cleaning and vacuum pumping. In other embodiments, end target segments are provided for improving the efficiency of film deposition near the ends of the elongated bars. The end target segments are provided with material removal surfaces which are also inclined, and connect with the elongated target segments to form a rectangular frame arrangement.