Abstract: Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.

Abstract: Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.

Abstract: Described herein are techniques to ensure that an action (e.g., a read or a write by a host device) associated with an element of a memory device that stores a value is valid compared to a reference value. The reference value is associated with an actual characteristic of a memory. The element storing the value can be stored in a region of memory that is configured to store metadata. The element can be re-programmed after the memory device is manufactured, and thus, the value stored in the element can be modified by a host device so that it incorrectly or inaccurately reflects a characteristic of the memory. In contrast, the reference value is stored in a separate region of memory and the reference value is a true value.

Abstract: Memory devices provide a plurality of memory cells, each memory cell including a memory element and a selection device. A plurality of first (e.g., row) address lines can be adjacent (e.g., under) a first side of at least some cells of the plurality. A plurality of second (e.g., column) address lines extend across the plurality of row address lines, each column address line being adjacent (e.g., over) a second, opposing side of at least some of the cells. Control circuitry can be configured to selectively apply a read voltage or a write voltage substantially simultaneously to the address lines. Systems including such memory devices and methods of accessing a plurality of cells at least substantially simultaneously are also provided.

Abstract: A memory device comprises a first plurality of addressable memory locations associated with a first data storage window and a second plurality of addressable memory locations associated with a second data storage window. The memory device includes a controller that receives requests from a host device to identify the first data storage window and the second data storage window. The controller receives requests to assign a first window index value to the first data storage window and to assign a second window index value to the second data storage window. The controller receives memory commands from the host device that indicate the first window index value and at least one address. The controller accesses, based at least on the first window index value, a location associated with the at least one address within the first plurality of addressable memory locations.

Abstract: This disclosure is directed to systems, apparatuses, and methods of storing a data entity using at least two sectors of a memory device based at least in part on context information of the data entity. For example, the context information may differentiate between large sequential operations and small random operations, and may further improve multitasking support. The context information may further improve operations to erase data in the memory device. For example, a method may include storing a data entity using at least two sectors of a memory device, the at least two sectors associated with the same data entity, and maintaining, at a memory controller, context information of the data entity comprising a pointer to at least one of the at least two sectors of the memory device. The method may further include erasing the at least two sectors of the memory device using the context information.

Abstract: The specification and drawings present a new apparatus and method for managing/configuring by the memory module controller storing operational state data for operating the memory module controller into an extended random access memory comprised in a memory module and in a host system memory of a host device during various operational modes/conditions of the memory module and the host system memory. Essentially, the memory module controller operated as a master for the data transfers as described herein. The operational state data typically comprises state information, a logical to physical (L2P) mapping table and register settings.

Abstract: A method includes, in one non-limiting embodiment, sending a request from a mass memory storage device to a host device, the request being one to allocate memory in the host device; writing data from the mass memory storage device to allocated memory of the host device; and subsequently reading the data from the allocated memory to the mass memory storage device. The memory may be embodied as flash memory, and the data may be related to a file system stored in the flash memory. The method enables the mass memory storage device to extend its internal volatile RAM to include RAM of the host device, enabling the internal RAM to be powered off while preserving data and context stored in the internal RAM.

Abstract: Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.

Abstract: A storage module includes a set of memories. Each of the memories in the set of memories may be divided into a set of portions. A controller is configured to transfer data between the set of memories and a host connected through an interface. A set of channels connects the set of memories to the controller. The controller is also configured to select: a memory from the set of memories, a portion from the set of portions for the selected memory, and/or a channel from the set of channels, e.g., connected to the selected memory, based upon an identification (ID) associated with the data. The ID may be separate from the data and a write address of the data, and the selected memory, the selected portion, and the selected channel may be used to store the data.

Abstract: The embodiments of the invention describe settings, commands, command signals, flags, attributes, parameters or the like for signed access prior to allowing data to be written to (e.g., a write access), read from (e.g., a read access) or erased from (e.g., an erase access) protected areas of a memory device (e.g., a region, logical unit, or a portion of memory in the storage module).

Abstract: A phase change memory may be formed which is amenable to multilevel programming. The phase change material may be formed with a lateral extent which does not exceed the lateral extent of an underlying heater. As a result, the possibility of current bypassing the amorphous phase change material in the reset state is reduced, reducing the programming current that is necessary to prevent this situation. In addition, a more controllable multilevel phase change memory may be formed in some embodiments.

Abstract: Memory devices provide a plurality of memory cells, each memory cell including a memory element and a selection device. A plurality of first (e.g., row) address lines can be adjacent (e.g., under) a first side of at least some cells of the plurality. A plurality of second (e.g., column) address lines extend across the plurality of row address lines, each column address line being adjacent (e.g., over) a second, opposing side of at least some of the cells. Control circuitry can be configured to selectively apply a read voltage or a write voltage substantially simultaneously to the address lines. Systems including such memory devices and methods of accessing a plurality of cells at least substantially simultaneously are also provided.

Abstract: A thin-film memory may include a thin-film transistor-free address decoder in conjunction with thin-film memory elements to yield an all-thin-film memory. Such a thin-film memory excludes all single-crystal electronic devices and may be formed, for example, on a low-cost substrate, such as fiberglass, glass or ceramic. The memory may be configured for operation with an external memory controller.

Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.

Abstract: A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory.

Abstract: The invention relates to a method comprising measuring the temperature of at least one location of a non-volatile memory; determining if said temperature measurement indicates that the data retention time of data stored at said at least one location is reduced below a threshold; and re-writing said data to said non-volatile memory in a response to a positive determination.

Abstract: A method includes, in one non-limiting embodiment, receiving a command originating from an initiator at a controller associated with a non-volatile mass memory coupled with a host device, the command being a command to write data that is currently resident in a memory of the host device to the non-volatile mass memory; moving the data that is currently resident in the memory of the host device from an original location to a portion of the memory allocated for use at least by the non-volatile mass memory; and acknowledging to the initiator that the command to write the data to the non-volatile mass memory has been executed. An apparatus configured to perform the method is also described.

Abstract: Methods, systems and devices for configuring access to a memory device are disclosed. The configuration of the memory device may be carried out by creating a plurality of access profiles that are adapted to optimize access to the memory device in accordance with a type of access. For example, when an application with specific memory access needs is initiated, the memory access profile that is designed for that particular access need may be utilized to configure access to the memory device. The configuration may apply to a portion of the memory device, a partition of the memory device, a single access location on the memory device, or any combination thereof.

Abstract: A method for wireless data communication between a wireless device having means for short-range data communication, and an electronic device includes mounting a data communication device having means for short-range radio frequency wireless data communication in a general purpose expansion memory location of the electronic device, activating a short-range radio frequency wireless data communication link between the wireless device and the data communication device, and transmitting data between the electronic device and the wireless device so that the wireless device operates as an ordinary expansion memory from the view point of the electronic device.