Abstract: A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), with the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.

Abstract: A method for conserving carbon dioxide vapor in a carbon dioxide dry cleaning system employing a liquid carbon dioxide cleaning solution to clean articles, where the method includes removing carbon dioxide vapor from a wash tank to a vapor tank, storing the carbon dioxide vapor in the vapor tank; and charging the wash tank with carbon dioxide vapor from the vapor tank. The method may be performed as part of a wash cycle that includes filling the wash tank with cleaning solution, washing articles to be cleaned in the wash tank, and emptying the cleaning solution out of the wash tank.

Abstract: An apparatus for cleaning a microelectronic substrate includes a pressure chamber, a supply of a process liquid including dense phase CO2 fluidly connected to the chamber and a distilling system. Distilling system includes a still fluidly connected to the chamber and operative to separate CO2 from the process fluid. The distilling system is operative to re-introduce the separated CO2 into the chamber or a further chamber.

Abstract: Methods for cleaning a microelectronic substrate in a cluster tool are described that include placing the substrate in a pressure chamber of a module in a cluster tool; pressurizing the pressure chamber; introducing liquid CO2 into the pressure chamber; cleaning the substrate in the pressure chamber; removing the liquid CO2 from the pressure chamber, depressurizing the pressure chamber, and removing the substrate from the pressure chamber. Apparatus for processing a microelectronic substrate are also disclosed that that include a transfer module, a first processing module that employs liquid carbon dioxide as a cleaning fluid coupled to the transfer module, a second processing module coupled to the transfer module, and a transfer mechanism coupled to the transfer module. The transfer mechanism is configured to move the substrate between the first processing module and the second processing module.

Abstract: Methods and apparatus for chemical mechanical planarization of an article such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning solvent step and apparatus may also be employed.

Abstract: A method of utilizing a divided pressure vessel in a processing system employing a carbon dioxide based solvent includes transferring a first carbon dioxide based treating solution from a first liquid chamber in a divided pressure vessel having a plurality of liquid chambers to a processing vessel, returning the first treating solution from the processing vessel to the divided pressure vessel, transferring a second carbon dioxide based treating solution having a composition different from the first treating solution from a second liquid chamber in the divided pressure vessel to a processing vessel, and returning the second treating solution from the processing vessel to the divided pressure vessel. A divided pressure vessel may allow multiple solvent baths each having a different chemical composition to be stored and/or processed in a single pressure vessel while maintaining the different chemical compositions of the multiple solvent baths.

Abstract: A process chamber assembly for use with a substrate and a flow of process fluid includes a vessel and a spray member. The vessel defines a chamber. The spray member includes at least one spray port formed therein adapted to distribute the flow of process fluid onto the substrate in the chamber. The spray member is operative to rotate about a rotational axis relative to the vessel responsive to a flow of the process fluid out of the spray member through the at least one spray port.

Abstract: A system for the controlled addition of detergent formulations and the like to a carbon dioxide cleaning apparatus comprises: (a) a high pressure wash vessel; (b) an auxiliary vessel; (c) a drain line connecting the auxiliary vessel to the wash vessel; (d) optionally but preferably, a separate vent line connecting the auxiliary vessel to the wash vessel; (e) a detergent reservoir; and (f) a detergent supply line connecting the detergent reservoir to the auxiliary vessel. An advantage of this apparatus is that, because the detergent formulation can be pumped into the auxiliary vessel in a predetermined aliquot or amount, which predetermined aliquot or amount can then be transferred into the wash vessel where it combines with the liquid carbon dioxide cleaning solution, the detergent formulation can be added to the cleaning solution in a more controlled or accurate manner.

Abstract: A process chamber assembly for use with a substrate and a flow of process fluid includes a vessel and a spray member. The vessel defines a chamber. The spray member includes at least one spray port formed therein adapted to distribute the flow of process fluid onto the substrate in the chamber. The spray member is operative to rotate about a rotational axis relative to the vessel responsive to a flow of the process fluid out of the spray member through the at least one spray port.

Abstract: A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.

Abstract: A method for conserving carbon dioxide vapor in a carbon dioxide dry cleaning system employing a liquid carbon dioxide cleaning solution to clean articles, where the method includes removing carbon dioxide vapor from a wash tank to a vapor tank, storing the carbon dioxide vapor in the vapor tank; and charging the wash tank with carbon dioxide vapor from the vapor tank. The method may be performed as part of a wash cycle that includes filling the wash tank with cleaning solution, washing articles to be cleaned in the wash tank, and emptying the cleaning solution out of the wash tank.

Abstract: A process chamber assembly for use with a substrate includes a vessel and a substrate holder. The vessel defines a chamber. The substrate holder has a rotational axis and includes front and rear opposed surfaces. The front surface is adapted to support the substrate. At least one impeller vane extends rearwardly from the rear surface and radially with respect to the rotational axis. The impeller vane is operative to generate a pressure differential tending to hold the substrate to the substrate holder when the substrate holder is rotated about the rotational axis. Preferably, the process chamber assembly includes a plurality of the impeller vanes extending rearwardly from the rear surface and radially with respect to the rotational axis.

Abstract: A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide drying composition, the cleaning composition comprising carbon dioxide, water, and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide cleaning composition; and then (d) removing the cleaning composition from the surface portion.

Abstract: Methods and apparatus for chemical mechanical planarization of an article such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning solvent step and apparatus may also be employed.

Abstract: A pressure chamber assembly for processing a substrate includes a pressure vessel defining an enclosed pressure chamber. A substrate holder is disposed in the pressure chamber and is adapted to hold the substrate. A drive assembly is operable to move the substrate holder. The drive assembly includes a first drive member connected to the substrate holder for movement therewith relative to the pressure vessel and a second drive member fluidly isolated from the first drive member and the pressure chamber. A drive unit is operable to move the second drive member. The drive unit is fluidly isolated from the first drive member and the pressure chamber. The second drive member is non-mechanically coupled to the first drive member such that the drive unit can move the substrate holder via the first and second drive members.

Abstract: A method of cleaning and removing solid particles during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the cleaning composition comprising carbon dioxide and a cleaning adjunct, the cleaning adjunct selected from the group consisting of cosolvents, surfactants, and combinations thereof; (c) immersing the surface portion in the densified carbon dioxide cleaning composition to remove solid particles from the surface portion; and then (d) removing the cleaning composition from the surface portion.

Abstract: A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water, entrained solutes, and/or solid particles or the like on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the drying composition comprising carbon dioxide and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide cleaning composition; and then (d) removing the cleaning composition from the surface portion.

Abstract: A method of cleaning and removing water, entrained solutes and particulate matter during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the cleaning composition comprising carbon dioxide and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide drying composition, and subjecting the densified carbon dioxide drying composition to cyclical phase modulation during at least a portion of the immersing step to thereby facilitating cleaning; and then (d) removing the cleaning composition from the surface portion.

Abstract: Cleaning apparatus having multiple wash tanks for washing articles in a carbon dioxide dry cleaning system employing a liquid carbon dioxide cleaning solution are provided. Cleaning apparatus having multiple wash tanks of the present invention may provide improved thermodynamic efficiency by allowing carbon dioxide vapor to be transferred between wash tanks rather than condensed. Cleaning apparatus having multiple wash tanks of the present invention may have a lower capital cost than multiple cleaning systems having single wash tanks. Cleaning apparatus having multiple wash tanks of the present invention include a first wash tank for contacting a first article with liquid carbon dioxide cleaning solution, and a second wash tank for contacting a second article with liquid carbon dioxide cleaning solution. The second wash tank is in fluid communication with the first wash tank. Methods of utilizing such cleaning apparatus are also provided.

Abstract: A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide drying composition, the drying composition comprising carbon dioxide and a drying adjunct, the drying adjunct selected from the group consisting of cosolvents, surfactants, and combinations thereof; (c) immersing the surface portion in the densified carbon dioxide drying composition; and then (d) removing the drying composition from the surface portion.