Abstract: A merged structure SRAM cell is provided that includes a first transistor and a second transistor. The second transistor gate forms a load resistor for the first transistor and the first transistor gate forms a load resistor for the second transistor. Also provided is a method of reading a memory cell that comprises applying a potential difference (VDIFF) to a selected memory cell by providing a column line potential (VC) and a row line potential (VR). According to this method, VDIFF is increased by an increment less than a transistor threshold voltage (VT). It is then determined whether the increased VDIFF results in a current flow on the column line for the selected memory cell. Also provided is a method of writing a memory cell that comprises applying VDIFF and increasing VDIFF by an increment more than VT to set the selected memory cell to a one state.

Abstract: An apparatus and method for ion generation are adapted such that an ionization process is controlled temporally, to first initiate, then to halt the breakdown of the gas before a destructive plasma or glow is formed. This method controls the release of energy to the gas in such a manner as to create ions but prevent the heating of the gas. The primary advantages of this ion generation mechanism are its simplicity, efficiency and its ability to create ions at ambient temperature and pressure.

Abstract: Retaining rings and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces are disclosed herein. A carrier head configured in accordance with one embodiment of the invention can be used to retain a micro-device workpiece during mechanical or chemical-mechanical polishing. In this embodiment, the carrier head can include a retaining ring carried by a workpiece holder. The retaining ring can include an inner surface, an outer surface, and a base surface extending at least partially between the inner and outer surfaces. The retaining ring can further include at least one annular groove and a plurality of transverse grooves. The annular groove can be positioned adjacent to the base surface between the inner and outer surfaces. The plurality of transverse grooves can extend from the inner surface of the retaining ring to the annular groove in the base surface.

Abstract: After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other embodiments, a zirconium-containing precursor includes but is not limited to ZrCl4 and ZrI4. The ZTB precursor is pulsed into reaction chamber 220 through the gas-distribution fixture 240 on substrate 210. Mass-flow controller 258 regulates the flow of the ZTB from gas source 253. In an embodiment, the substrate temperature is maintained at about 200° C. The ZTB aggressively reacts at the current surface of substrate 210.

Abstract: A temperature sensor is comprised of a device adapted to provide a first signal having a parameter responsive to temperature. A generator provides a reference signal having a parameter that is substantially consistent over a preselected temperature range. A comparator is electrically coupled to the device and the generator and is adapted to provide a second signal in response to the parameter of the first signal differing from the parameter of the reference signal. A digital filter is coupled to the comparator and is adapted to provide a third signal in response to receiving the second signal for a preselected duration of time.

Abstract: A stiffener molded to a semiconductor substrate, such as a lead frame, and methods of molding the stiffener to the substrate are provided. The stiffener is molded to the substrate to provide rigidity and support to the substrate. The stiffener material can comprise a polymeric material molded to the substrate by a molding technique such as transfer molding, injection molding, and spray molding, or using an encapsulating material. One or more dies, chips, or other semiconductor or microelectronic devices can be disposed on the substrate to form a die assembly. The stiffener can be molded to a substrate comprising one or more dies, over which an encapsulating material can be applied to produce a semiconductor die package.

Abstract: A field-effect transistor has a channel region in a bulk semiconductor substrate, a first source/drain region on a first side of the channel region, a second source/drain region on a second side of the channel region, and an extension of epitaxial monocrystalline material formed on the bulk semiconductor substrate so as to extend away from each side of the channel region.

Abstract: A method for sorting integrated circuit (IC) devices of the type having a fuse identification (ID) into those devices requiring enhanced reliability testing and those requiring standard testing includes storing fabrication deviation data, probe data, and test data in association with the fuse ID of each of the devices indicating each of the devices requires either enhanced reliability testing or standard testing. The fuse ID of each of the devices is then automatically read before, during, or after standard testing of the devices. The testing process requirement data stored in association with the fuse ID of each of the devices is then accessed, and the devices are sorted in accordance with the accessed data into those devices requiring enhanced reliability testing and those requiring standard testing.

Abstract: A cooling mechanism within an integrated circuit includes an internal pump for circulating thermally conductive fluid within closed loop channels. The cooling channels are embedded within an integrated circuit die, such as in interlevel dielectric layers between metal levels. The channels are formed by engineering deposition of a layer to line trenches and form continuous voids along the trenches. Exemplary heat pumps comprise cavities, formed in communication with the channels, covered by piezoelectric actuators. Preferably, the actuators are wired to act in sequence as a peristaltic pump, circulating the fluid within the channels. The channels are positioned to carry heat from active devices within the integrated circuit, and a heat sink carries heat from the die.

Abstract: A method of managing a repeated surface comprising seismic data as one surface is disclosed where a plurality of horizons is analyzed and a determination made as to which of the plurality of horizons comprise a repeated surface. Those horizons which comprise the repeated surface may then be logically connected into a logically connected horizons data set which may then be assigned a common identifier and which may further respond similarly to a single event, e.g. a user action. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A cascode I/O driver is described that includes a barrier formed in the shared region between the two transistors. The barrier region allows the I/O driver to be designed to primarily meet I/O requirements. Accordingly, improved operating speeds are achieved. An system is described that includes an I/O driver in parallel with an ESD device. In an embodiment, the I/O driver may assist the ESD device in discharging electrostatic, after the ESD begins conducting.

Abstract: A shutter system for a pixel array is disclosed. The system includes a read shift register, first and second reset shift registers, and a plurality of logic gates. The read shift register is configured to sequentially count rows of the pixel array from top to bottom, such that the read shift register generates a read pointer. The first reset shift register is configured to sequentially reset rows of the pixel array from top to bottom. The first reset shift register provides a first reset pointer for allowing reset of pixels in a row indicated by the first reset pointer. The first reset pointer allows reset of pixels prior to reading of the pixels in a row indicated by the read pointer. The time difference between the first reset pointer and the read pointer indicates an exposure time.

Abstract: The method of the present invention relates to the field of seismic data interpretation for the purpose of locating a surface in a three dimensional volume of seismic data. The present invention applies mathematical gridding to the location of surfaces in a volume.

Abstract: A variable bandwidth, distributed amplifier circuit includes an input transmission line; an output transmission line; and a plurality of amplifier cells having a respective plurality of cell inputs distributed along the input transmission line and cell outputs distributed along said output transmission line. Each amplifier cell comprises a cascode amplifier having an input transistor, an output transistor, and a variable impedance device in a circuit branch coupled to a gate of the output transistor. The impedance of the variable impedance device is responsive to a variable bias control signal.

Abstract: A memory device includes a control circuit for initiating a read operation and a write operation in response to a combination of input signals during a setup time. The setup time is a time interval during which all input signals must remain valid before a next appearance of a rising edge of a clock signal. The control circuit uses the setup time to send a signal from one part of the memory to another part of the memory to avoid a signal propagation delay time. The memory device also includes a circuit for preparing the memory device for the write operation before the setup time.

Abstract: A two-transistor pixel of an imager has a reset region formed adjacent a charge collection region of a photodiode and in electrical communication with a gate of a source follower transistor. The reset region is connected to one terminal of a capacitor which integrates collected charge of the photodiode. The charge collection region is reset by pulsing the other terminal of the capacitor from a higher to a lower voltage.

Abstract: The method of the present invention relates to the field of seismic data interpretation for the purpose of finding natural occurrences of oil and/or gas in a geophysical formation. The invention relates to a method of processing seismic geophysical data to produce time structure volumes. The method of the present invention is capable of displaying the position and orientation of layered rocks in the subsurface of the earth.

Abstract: Memory chips containing multiple-bank memory devices are arranged to be mounted in a memory package with the major axis of the memory chip aligned substantially parallel with the major axis of its memory package. Memory devices of various embodiments contain banks of non-volatile flash memory cells and have access commands synchronized to a system clock. Data chip bond pads for coupling to data pins of a memory package are located in a first quadrant of the memory chip. Address chip bond pads for coupling to address pins of a memory package are located in an opposite quadrant of the memory chip.

Abstract: The invention is a method for constructing an integrated circuit structure and an apparatus produced by the method. The method generally comprises constructing an integrated circuit structure by disposing a layer of doped oxide, the dopant being iso-electronic to silicon, and then reflowing the layer of doped oxide. Thus, the apparatus of the invention is an integrated circuit structure comprising a reflowed layer of doped oxide wherein the dopant is iso-electronic to silicon. In one particular embodiment, the method generally comprises constructing an integrated circuit feature on a substrate; disposing a layer of doped oxide, the dopant being iso-electronic to silicon, over the integrated circuit feature and the substrate in a substantially conformal manner; reflowing the layer of doped oxide; and etching the insulating layer and the oxide.

Abstract: A method and device for providing a relief area on the surface of a molded I/C package. Specifically, a method of reducing delamination at the gate area of a molded I/C package by disposing an area of patterned metal traces on the substrate surface to form a relief area. The relief area will permit the I/C package to be broken away form the molding apparatus while reducing the possibility of delamination or Au/Cu burs at the gate area.