Abstract: Semiconductor device assemblies having features that are used to align semiconductor dies, and associated systems and methods, are disclose herein. In some embodiments, a semiconductor device assembly includes substrate that has a top surface and an alignment structure at the top surface. A first die is disposed over the top surface of the substrate, and the first die has a first channel that extends between a top side and a bottom side of the first die. The first channel is vertically aligned with and exposes the alignment structure at the top surface of the substrate.

Abstract: Embodiments of the disclosure include signal processing methods to precondition signals for transmission on a high speed bus. A preconditioning circuit is configured to receive a serialized data signal at an input node and to precondition the serialized output data signal to provide a preconditioned output signal at an output node. The pre-conditioning circuit may include a feedback circuit coupled between the input node and the output node that is configured to independently control both of a propagation delay between the output node and the input node and a magnitude of emphasis/de-emphasis applied to a signal at the output node for provision to the input node.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. The conductive tiers comprise metal along sides of the memory blocks. Silicon is formed between the memory blocks over the metal of the conductive tiers. The silicon and the metal react to form metal silicide therefrom that is directly against and longitudinally-along the metal of individual of the conductive tiers. After the reacting, unreacted of the silicon is removed from between the memory blocks and intervening material is formed between and longitudinally-along the memory blocks. Other embodiments, including structure independent of method, are disclosed.

Abstract: A memory device includes a clock input configured to receive a clock from a host device. The memory device also includes a command input configured to receive command and address bits from the host device. The memory device further includes multiple die stacked in a three-dimensional stack. A first die of the plurality of die includes a first plurality of memory cells and first local control circuitry. The first local circuitry includes division circuitry configured to receive the clock from the clock input, generate a divided clock having a lower frequency than that of the clock, and generate multiple clocks from the divided clock with each of the multiple clocks having a lower frequency than the divided clock. The memory device also includes one or more transmitters configured to transmit the multiple clocks using a inter-die interconnects between the multiple die.

Abstract: A liner is formed laterally-outside of individual channel-material strings in one of first tiers and in one of second tiers. The liners are isotropically etched to form void-spaces in the one second tier above the one first tier. Individual of the void-spaces are laterally-between the individual channel-material strings and the second-tier material in the one second tier. Conductively-doped semiconductive material is formed against sidewalls of the channel material of the channel-material strings in the one first tier and that extends upwardly into the void-spaces in the one second tier. The conductively-doped semiconductive material is heated to diffuse conductivity-increasing dopants therein from the void-spaces laterally into the channel material laterally there-adjacent and upwardly into the channel material that is above the void-spaces.

Abstract: Some embodiments include an integrated assembly having a CMOS region. Fins extend across the CMOS region and are on a first pitch. A circuit arrangement is associated with the CMOS region and includes segments of one or more of the fins. The circuit arrangement has a first dimension along a first direction. A second region is proximate the CMOS region. Conductive structures are associated with the second region. The conductive structures extend along a second direction different than the first direction. Some of the conductive structures are electrically coupled with the circuit arrangement. The conductive structures are on a second pitch different from the first pitch. A second dimension is a distance across said some of the conductive structures along the first direction, and the second dimension is substantially the same as the first dimension.

Abstract: Systems, methods, and apparatuses for data prioritization and selective data processing are described herein. A computing device may receive sensor data and prioritize a first portion of the sensor data over a second portion of the sensor data. The first portion of sensor data may be stored in a first memory that has a higher access rate than a second memory where the second portion of sensor data is stored. The first portion of sensor data may be processed with priority and the second portion of sensor data may be transmitted to a cloud computing device.

Abstract: Some embodiments include an integrated assembly having a pillar of semiconductor material. The pillar has a base region, and bifurcates into two segments which extend upwardly from the base region. The two segments are horizontally spaced from one another by an intervening region. A conductive gate is within the intervening region. A first source/drain region is within the base region, a second source/drain region is within the segments, and a channel region is within the segments. The channel region is adjacent to the conductive gate and is vertically disposed between the first and second source/drain regions. Some embodiments include methods of forming integrated assemblies.

Abstract: An apparatus that includes: a plurality of first data amplifiers arranged in line in a first direction; a plurality of first read data buses each coupled to a corresponding one of the plurality of first data amplifiers, the plurality of first read data buses having different lengths one another; and a plurality of first write data buses each coupled to the corresponding one of the plurality of first data amplifiers, the plurality of first write data buses having different lengths one another. The plurality of first read data buses and the plurality of first write data buses are alternately arranged in parallel in a second direction vertical to the first direction. The plurality of first read data buses are arranged in longest order and the plurality of first write data buses are arranged in shortest order.

Abstract: A known randomized data pattern at a predetermined reference voltage of the internal oscilloscope is inputted to an internal oscilloscope of the receiving device for each delay tap element of a plurality of consecutive delay tap elements applied to a system clock of a receiving device. A first delay tap element among the plurality of consecutive delay tap elements in which an output of the internal oscilloscope matches the known randomized data pattern is identified. Responsive to identifying the first delay tap element, a last delay tap element among the plurality of consecutive delay tap elements in which the output of the internal oscilloscope matches the known randomized data pattern is identified.

Abstract: An error associated with a read operation corresponding to a memory die of a memory sub-system is detected. In response to detecting the error, a first read throughput level of the memory sub-system is identified. A quantity of queues receiving operation requests is decreased, the decreased quantity of queues corresponding to a second read throughput level. A read retry operation associated with the memory die is initiated at the second read throughput level.

Abstract: Methods, systems, and devices for mapping descriptors for read operations are described. A memory device may include a first cache may include a mapping table between the logical addresses and the physical addresses, and a second cache may include one or more descriptors of one or more physical addresses of the memory array. A descriptor may include a starting logical address, a starting physical address, and a quantity of addresses in the descriptor, and may be configured to identify addresses or sets of address that are frequently accessed. When an access command (e.g., a read command) is received, the first cache may be queried and then the second cache may be queried (if there is a cache miss at the first cache). The physical address of the data of the memory array may be determined (and accessed) based on the descriptors stored in the second cache.

Abstract: Methods, systems, and devices for configurable memory die capacitance are described. A memory device may include a capacitive component, which may include one or more capacitors and associated switching components. The capacitive component may be coupled with an input/output (I/O) pad and an associated input buffer, and the one or more capacitors of the capacitive component may be selectively couplable with the I/O pad via the switching components. Switching components may be activated individually, in coordination, or not at all, such that one, multiple, or none of the capacitors may be coupled with the I/O pad. The capacitive component, I/O pad, and input buffer may be included in a same die of the memory device. In some cases, a configuration of the capacitive component may be based on signaling received from a host device.

Abstract: An example memory sub-system includes: a plurality of bank groups, wherein each bank group comprises a plurality of memory banks; a plurality of row buffers, wherein two or more row buffers of the plurality of row buffers are associated with each memory bank; a cache comprising a plurality of cache lines; a processing logic communicatively coupled to the plurality of bank groups and the plurality of row buffers, the processing logic to perform operations comprising: receiving an activate command specifying a row of a memory bank of the plurality of memory banks; fetching data from the specified row to a row buffer of the plurality of row buffers; and copying the data to a cache line of the plurality of cache lines.

Abstract: Described systems, apparatuses, and methods relate to volatile memories that are refreshed to maintain data integrity, such as dynamic random-access memory (DRAM) and synchronous DRAM (SDRAM). A memory device includes multiple dies, with each die having a memory array to be refreshed. The multiple dies may be interconnected via at least one inter-die bus of the memory device. A memory controller sends a command to the memory device to enter a self-refresh mode. In response, a die of the multiple dies can enter the self-refresh mode and initiate or otherwise coordinate refresh operations of the other dies. To do so, the die may transmit at least one refresh-related command to at least one other die using the inter-die bus. Multiple different signaling schemes and timing approaches are disclosed. The described inter-die refresh control principles may be implemented in energy-efficient applications, such as in low-power double data rate (LPDDR) SDRAM.

Abstract: A method to provide network storage services to a remote host system, including: generating, from packets received from the remote host system, first control messages and first data messages; buffering, in a random-access memory of a memory sub-system, the first control messages for a local host system to fetch the first control messages, process the first control messages, and generate second control messages; sending the first data messages to a storage device of the memory sub-system without the first data messages being buffered in the random-access memory; communicating the second control messages generated by the local host system to the storage device of the memory sub-system; and processing, within the storage device, the second control messages and the first data messages to provide the network storage services.

Abstract: Methods, systems, and devices for life expectancy monitoring for memory devices are described. A memory device may monitor a parameter of a component of the memory device or the memory device overall, and may determine whether the parameter satisfies a threshold. The parameter may represent or be associated with a lifetime of the component, a level of wear of the component, or an operating parameter violation of the component, or any combination thereof. The memory device may communicate, to a host device, an indication of the parameter satisfying the threshold, and the host device may use the information in the indication to adjust one or more parameters associated with operating the memory device, among other example operations.

Abstract: Methods, systems, and devices for managing address access information are described. A device may receive a command for an address of a memory array. Based on or in response to the command, the device may read a first set of tag bits from the memory array. The first set of tag bits may indicate access information for a set of addresses that includes the address. The device may determine a second set of tag bits based on the command and the address. The second set of tag bits may indicate updated access information for the address. The device may generate a codeword based on the first set of tag bits and the second set of tag bits and may store the codeword in the memory array.

Abstract: The disclosed embodiments are directed toward improved control circuitry for artificial intelligence processors. In one embodiment, a device is disclosed comprising a processing element, the processing element including a processing device configured to receive a first set of vectors; a hijack control circuit, the hijack control circuit configured to replace the first set of vectors with a second set of vectors in response to detecting that the processing element is idle; and a processing element control circuit (PECC), the PECC storing a set of values representing the second set of vectors, the set of values retrieved from a remote data source.

Abstract: Methods, systems, and devices for techniques for generating access line voltages are described. A system may use a first voltage supply and a second voltage supply that is configured to supply a lower voltage than the first voltage supply. The system may activate a first circuit to couple a node with the first voltage supply so that a first voltage develops on the node from the first voltage supply. The system may activate a second circuit to couple the node with the second voltage supply so that a second voltage that is lower than the first voltage develops on the node from the second voltage supply.