Abstract: A Vertical Multiple Implanted Silicon Carbide Power MOSFET (VMIMOSFET) includes a first conductivity semiconductor substrate, a first conductivity semiconductor drift layer on the top of the substrate, a multitude of second conductivity layers implanted in the drift layer. The body layer is where the channel is formed. A first conductivity source layer is interspaced appropriately inside of the second conductivity layers. A gate oxide of a certain thickness and another oxide of a different thickness, a greater thickness than the gate oxide, placed in between the body layers but in such way that its shape does not distort the gate oxide in the channel. A charge compensated body layer of the second conductivity formed outside of the channel region and only at specific high electric field locations in the structure. The device and the manufacturing method deliver a power SiC MOSFET with increased frequency of operation and reduced switching losses.

Abstract: Methods, systems, and devices are described for an adjustment module that interacts with a parameter detection module to provide a threshold value for initiating switching of a switching module in a cyclical electronic system. Aspects of the present disclosure provide a switching module used in conjunction with an inductor that is coupled with the switching module. The threshold voltage for switching the switching module may be adjusted to provide switching at substantially zero volts while maintaining sufficient energy in the inductor to drive the voltage at a switching element in the switching module to zero volts. Such auto-adjustment circuits may allow for enhanced efficiency in cyclical electronic systems. The output of an up/down counter may be used to set another parameter that effects the performance of the cyclical electronic system in order to enhance the performance of the cyclical electronic system.

Abstract: A front end module for use with a first and a second radio frequency transceiver, constituted of: a control circuitry; a first antenna connection port; a second antenna connection port; a filter arranged to substantially attenuate the carrier frequency bandwidth of the second radio frequency transceiver; and a plurality of electronically controlled switches, wherein the control circuitry is arranged to: in the event that the first and second radio frequency transceivers are simultaneously operative, set the plurality of electronically controlled switches to connect the first radio frequency transceiver to one of the first and second antenna connection ports via the filter; and in the event that the first and second radio frequency transceivers are not simultaneously operative, set the plurality of electronically controlled switches to bypass the filter and connect the first radio frequency transceiver to one of the first and second antenna connection ports.

Abstract: A Vertical Multiple Implanted Silicon Carbide Power MOSFET (VMIMOSFET) includes a first conductivity semiconductor substrate, a first conductivity semiconductor drift layer on the top of the substrate, a multitude of second conductivity layers implanted in the drift layer. The body layer is where the channel is formed. A first conductivity source layer is interspaced appropriately inside of the second conductivity layers. A gate oxide of a certain thickness and another oxide of a different thickness, a greater thickness than the gate oxide, placed in between the body layers but in such way that its shape does not distort the gate oxide in the channel. A charge compensated body layer of the second conductivity formed outside of the channel region and only at specific high electric field locations in the structure. The device and the manufacturing method deliver a power SiC MOSFET with increased frequency of operation and reduced switching losses.

Abstract: A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.

Abstract: A power source constituted of: a power factor corrector controller; an electronically controlled switch responsive to the power factor corrector controller; a first inductor serially connected with the electronically controlled switch and arranged to pass a direct current there through when the electronically controlled switch is closed; a second inductor magnetically coupled to the first inductor and coupled to provide power to a load in a flyback arrangement; a third inductor magnetically coupled to the first inductor, a first end of the third inductor arranged to provide a representation of the voltage level of the direct current when the electronically controlled switch is closed, and to provide a representation of the voltage level of the power provided to the load when the electronically controlled switch is open; and an off time control circuit in communication with the power factor corrector controller and responsive to the third inductor representations.

Abstract: An arrangement wherein a plurality of LED strings are driven with a balanced drive signal, i.e. a drive signal wherein the positive side and negative side are of equal energy over time, is provided. In a preferred embodiment, the drive signal is balanced responsive to a capacitor provided between a switching network and a driving transformer. Balance of current between various LED strings is provided by a balancing transformer.

Abstract: Methods, systems, and devices are described for providing a communication system for handling pulse information. Embodiments of the invention provide a pulse shaping unit operable to avoid saturation of the pulse transformer, while being easily incorporated into IC processes. Some embodiments of the pulse shaping unit provide a two-to-three level driver unit for converting a two-level input voltage signal to a three-level driver signal for driving a pulse transformer. Other embodiments of the pulse shaping unit provide components configured to differentially drive a pulse transformer, effectively converting a two-level input voltage signal to a three-level driver signal.

Abstract: A SIC VDMOS transistor is integrated with a SiC SBD, in a seamless way, without any increase of the device area. The SiC SBD is integrated in the active area of the VDMOS by splitting the P-Wells, such that the lightly doped drift region extents all the way to the surface of semiconductor, and by trenching through the source of the VDMOS and partially through the P-Wells to reach the peak of the P-type doping in the P-Well regions. The source of the VDMOS is contacted from the top surface and from the vertical sidewalls of the trenched source and the forward voltage of the Schottky Barrier diode is tailored by using two different metals for the ohmic contact on the source and for the SBD.

Abstract: Devices and methods for correcting for start-up transients in integrated power amplifiers are disclosed. A delay element is arranged to produce a delay waveform signal that is responsive to an input voltage signal. A transconductance element has an input that receives the delay waveform signal and is arranged to provide an output boost current that is based on the delay waveform signal and a gain of the transconductance element. A reference element provides an output bias current that is responsive to a static reference current and the boost current. A bias element has an input that receives the bias current and is arranged to provide a bias control output. A power amplifier is responsive to the bias control output and is arranged to provide an amplified power output. In some examples, the boost current is adjusted based on a supply voltage and an input power of the power amplifier.

Abstract: A power amplifier has power detection capabilities that include a radio frequency (RF) power amplifier that has a gain stage that includes a gain stage input, a gain stage output, and a feedback loop coupled between an input and an output of the power amplifier. A detection circuit has a first detection circuit input electrically coupled to the gain stage input and has a detection circuit output. An amplitude control circuit and a phase control circuit are electrically coupled together in series between the gain stage output and a second detection circuit input. The amplitude control circuit and the phase control circuit produce a signal that is received by the second detection circuit input so that the detection circuit can detect a signal at the detection circuit output that is proportional to a the forward power output of the power amplifier and is insensitive to power amplifier output load mismatch.

Abstract: A hermetically sealed integrated circuit package that includes a cavity housing a semiconductor die, whereby the cavity is pressurized during assembly and when formed. The invention prevents the stress on a package created when the package is subject to high temperatures at atmospheric pressure and then cooled from reducing the performance of the die at high voltages. By packaging a die at a high pressure, such as up to 50 PSIG, in an atmosphere with an inert gas, and providing a large pressure in the completed package, the dies are significantly less likely to arc at higher voltages, allowing the realization of single die packages operable up to at least 1200 volts. Moreover, the present invention is configured to employ brazed elements compatible with Silicon Carbide dies which can be processed at higher temperatures.

Abstract: A magnetics based hybrid circuit, comprising a receiver side transformer and a transmitter side transformer is described. Power is supplied via respective inductive elements coupled to respective first end of the receiver side transformer and the transmitter side transformer. A DC blocking element is further provided in series between the second end of the receiver side primary winding and the second end of the transmitter side primary winding.

Abstract: A square law extension circuit is disclosed that operates over a range of frequencies and power levels. The square law extension circuit includes a detector, an amplifier, and an expander. The detector has an input for receiving radio frequency (RF) signals and providing a detected signal output. The amplifier has an input that receives the detected signal output of the detector and provides an output for an amplified detected signal. The expander has an input that receives the amplified detected signal and is arranged to provide an expanded signal output. The expanded signal output is a signal that increases in a first proportion to the amplified detected signal up to a predetermined threshold and increases at a second proportion to the amplified detected signal that is more than the first proportion when the expanded signal output exceeds the predetermined threshold.

Abstract: Methods, systems, and devices are described for sensing a phase-cut dimming signal and outputting a control signal compatible with a switching power circuit. Embodiments of the invention generate at least one of a low-frequency pulse-wave-modulated control signal, an analog output control signal, or a digital (e.g., higher-frequency pulse-wave-modulated) output control signal. Some embodiments further provide preloading and/or startup control functionality to allow proper functioning of the circuitry under small-conduction-angle (i.e., highly dimmed) conditions.

Abstract: A Vertical Multiple Implanted Silicon Carbide Power MOSFET (VMIMOSFET) includes a first conductivity semiconductor substrate, a first conductivity semiconductor drift layer on the top of the substrate, a multitude of second conductivity layers implanted in the drift layer. The body layer is where the channel is formed. A first conductivity source layer is interspaced appropriately inside of the second conductivity layers. A gate oxide of a certain thickness and another oxide of a different thickness, a greater thickness than the gate oxide, placed in between the body layers but in such way that its shape does not distort the gate oxide in the channel. A charge compensated body layer of the second conductivity formed outside of the channel region and only at specific high electric field locations in the structure. The device and the manufacturing method deliver a power SiC MOSFET with increased frequency of operation and reduced switching losses.

Abstract: A millimeter wave object detection system includes a millimeter wave imager and a data entry device configured to assign assessment information to events where a concealed object is detected by an operator/observer or automated computer program interrogating imagery produced by the millimeter wave imager. A computer is programmed to store assessment data from the data entry device into a database, and statistical operations can be performed upon the database.

Abstract: A vertical-sidewall dual-mesa static induction transistor (SIT) structure includes a silicon carbide substrate having a layer arrangement formed thereon. Laterally spaced ion implanted gate regions are defined in the layer arrangement. Source regions are defined in the layer arrangement. Each of the source regions can include a channel mesa having a source mesa disposed thereon. The source mesa includes upright sidewalls relative to a principal plane of the substrate defining a horizontal dimension thereof. The channel mesa includes upright sidewalls relative to the source mesa and the principal plane of the substrate. Also disclosed is a method of fabricating a vertical-sidewall dual-mesa SiC transistor device. The method includes implanting ions at an angle relative to a principal plane of the substrate to form gate junctions in upper portions of the substrate and lateral portions of the upright channel mesas.

Abstract: An electro-magnetic device assembly constituted of an electro-magnetic device; a chassis arranged to sink heat; at least one thermally conductive material in thermal communication with the electro-magnetic device and with the chassis; and at least one mechanically isolating material in contact with the thermally conductive material and with the chassis, the at least one mechanically isolating material arranged to dampen the transmission of vibrations experienced by the chassis, in the direction of the magnetic field of the electro-magnetic device, to the electro-magnetic device.

Abstract: A power converter constituted of: a reference source; a clock generator exhibiting a variable frequency output, the value of the frequency of the variable frequency output responsive to an external resistor value; and an error amplifier in communication with the reference source, the error amplifier exhibiting a gain whose value is responsive to the external resistor value. Preferably the error amplifier is a transconductance amplifier. In one embodiment the power converter further exhibits a current squarer, arranged to produce a squared value of a current whose value is responsive to the external resistor and provide the squared value to the transconductance amplifier.