Abstract: A digital phased lock loop includes a digital controlled oscillator configured to produce an output signal at an output signal frequency, and a phase comparator configured to compare the output signal or a signal derived from the output signal, with a reference signal at a reference signal frequency or a signal derived from the reference signal to produce a phase error signal. A first loop filter produces a first control signal for the digital controlled oscillator. A frequency error measuring circuit produces a frequency error signal that directly represents a frequency difference between the output signal frequency and the reference signal frequency. A second loop filter produces a second control signal for the digital controlled oscillator from an output of the frequency error measuring circuit. A circuit combines the first and second control signals and providing the combined control signals to the digital controlled oscillator.

Abstract: An architecture disposed in an integrated circuit for in-application programming of flash-based programmable logic devices includes a processor coupled to a processor system bus. An I/O peripheral is coupled to the processor over the system bus and is also coupled to an off-chip data source. A programmable logic device fabric includes flash-based programmable devices. A program controller is coupled to the flash-based programmable devices. An in-application programming controller is coupled to the program controller and is coupled to the processor over the system bus.

Abstract: A method for detecting failure of speed measurement of a multi-phase AC motor includes (1) sensing current drawn by the motor, (2) sensing voltage magnitude supplied to the motor, (3) measuring motor speed, (4) calculating motor speed, (5) determining whether the difference between the measured motor speed and the calculated motor speed is greater than a predetermined threshold, if the difference between the measured motor speed and the calculated motor speed is not greater than a predetermined threshold, repeating (1) through (5), if the difference between the measured motor speed and the calculated motor speed is greater than a predetermined threshold, indicating a fault, if a fault is indicated, performing a predetermined number of restart attempts, if the motor is successfully restarted, repeating (1) through (5), if the motor is not successfully restarted, indicating a restart failure.

Abstract: A hybrid input/output pad driver includes an input node in a first voltage supply domain coupled to a p-device driver in the second voltage supply domain and an n-device driver in the second voltage domain. A p-channel pullup transistor is coupled between a voltage potential in a third voltage domain and an input/output pad. Its gate is coupled to the output of the p-device driver. An n-channel pulldown transistor is coupled between ground and the input/output pad. Its gate is coupled to the output of the n-device driver. An n-channel pullup transistor has a source coupled to the input/output pad, a drain coupled to the voltage potential in the third voltage supply domain. An inverter in the second voltage supply domain is programmably connectable between the output of the p-driver circuit and the gate of the n-channel pullup transistor.

Abstract: A push-pull resistive random access memory cell circuit includes an output node, a word line, a first bit line, and a second bit line. A first resistive random access memory device is connected between the first bit line and the output node and a second resistive random access memory device is connected between the output node and the second bit line. A first programming transistor has a gate connected to the word line, a drain connected to the output node, and a source. A second programming transistor has a gate connected to the word line, a drain connected to the source of the first programming transistor, and a source. The first and second programming transistors have the same pitch, the same channel length, and the same gate dielectric thickness, the gate dielectric thickness chosen to withstand programming and erase potentials encountered during operation of the push-pull ReRAM cell circuit.

Abstract: A digital phased lock loop includes a digital controlled oscillator configured to produce an output signal at a frequency. A phase comparator compares the output signal, or a signal derived therefrom, with a reference signal to produce a phase error signal. A first loop filter produces a first control signal for the digital controlled oscillator from an output of the phase comparator. A frequency error measuring circuit coupled to the output of the phase comparator produces a frequency error signal. A second loop filter produces a second control signal for the digital controlled oscillator from an output of the frequency error measuring circuit. A circuit combines the first and second control signals and provides the combined control signals to the digital controlled oscillator.

Abstract: A method for performing on-chip spatial debugging of a user circuit programmed into a user-programmable integrated circuit includes halting an internal clock driving synchronous logic elements in the integrated circuit and reading the states of all synchronous logic elements programmed into the integrated circuit while the internal clock is halted. An interrupt to an embedded processor in the integrated circuit running a user application can also be generated. The output of at least one synchronous logic element can be forced to a desired state while the internal clock is halted. The clock can then be restarted or stepped.

Abstract: A multi-state static RAM cell includes N NOR gates. Each NOR gate has N?1 inputs and one output. The output of each NOR gate is coupled to a different bit line. Each NOR gate has its inputs connected to the outputs of each of the other NOR gates.

Abstract: A push-pull resistive random access memory cell circuit includes an output node, a word line, a first bit line, and a second bit line. A first resistive random access memory device is connected between the first bit line and the output node and a second resistive random access memory device is connected between the output node and the second bit line. A first programming transistor has a gate connected to the word line, a drain connected to the output node, and a source. A second programming transistor has a gate connected to the word line, a drain connected to the source of the first programming transistor, and a source. The first and second programming transistors have the same pitch, the same channel length, and the same gate dielectric thickness, the gate dielectric thickness chosen to withstand programming and erase potentials encountered during operation of the push-pull ReRAM cell circuit.

Abstract: A gate-boosting transmission gate includes an input node and an output node. An n-channel transistor has a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the n-channel transistor having a low threshold. A p-channel transistor has a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the p-channel transistor having a very low threshold.

Abstract: A digital phased lock loop includes a digital controlled oscillator configured to produce an output signal at a frequency. A phase comparator compares the output signal, or a signal derived therefrom, with a reference signal to produce a phase error signal. A first loop filter produces a first control signal for the digital controlled oscillator from an output of the phase comparator. A frequency error measuring circuit coupled to the output of the phase comparator produces a frequency error signal. A second loop filter produces a second control signal for the digital controlled oscillator from an output of the frequency error measuring circuit. A circuit combines the first and second control signals and provides the combined control signals to the digital controlled oscillator.

Abstract: A push-pull resistive random access memory cell circuit includes an output node, a word line, a first bit line, and a second bit line. A first resistive random access memory device is connected between the first bit line and the output node and a second resistive random access memory device is connected between the output node and the second bit line. A first programming transistor has a gate connected to the word line, a drain connected to the output node, and a source. A second programming transistor has a gate connected to the word line, a drain connected to the source of the first programming transistor, and a source. The first and second programming transistors have the same pitch, the same channel length, and the same gate dielectric thickness, the gate dielectric thickness chosen to withstand programming and erase potentials encountered during operation of the push-pull ReRAM cell circuit.

Abstract: A push-pull resistive random access memory cell circuit includes an output node, a word line, a first bit line, and a second bit line. A first resistive random access memory device is connected between the first bit line and the output node and a second resistive random access memory device is connected between the output node and the second bit line. A first programming transistor has a gate connected to the word line, a drain connected to the output node, and a source. A second programming transistor has a gate connected to the word line, a drain connected to the source of the first programming transistor, and a source. The first and second programming transistors have the same pitch, the same channel length, and the same gate dielectric thickness, the gate dielectric thickness chosen to withstand programming and erase potentials encountered during operation of the push-pull ReRAM cell circuit.

Abstract: A hybrid input/output pad driver includes an input node in a first voltage supply domain coupled to a p-device driver in the second voltage supply domain and an n-device driver in the second voltage domain. A p-channel pullup transistor is coupled between a voltage potential in a third voltage domain and an input/output pad. Its gate is coupled to the output of the p-device driver. An n-channel pulldown transistor is coupled between ground and the input/output pad. Its gate is coupled to the output of the n-device driver. An n-channel pullup transistor has a source coupled to the input/output pad, a drain coupled to the voltage potential in the third voltage supply domain. An inverter in the second voltage supply domain is programmably connectable between the output of the p-driver circuit and the gate of the n-channel pullup transistor.

Abstract: A r a level shifter circuit includes a first p-channel kick transistor connected directly across a first cross-coupled p-channel transistor, a second p-channel kick transistor connected directly across a second cross-coupled p-channel transistor, a first gate drive circuit coupled to the gate of the first p-channel kick transistor and configured to turn on first p-channel kick transistor to pull up the first output node in response to a rising edge of a signal at the input node, and a second gate drive circuit coupled to the gate of the second p-channel kick transistor and configured to turn on second p-channel kick transistor to pull up the second output node in response to a falling edge of a signal at the input node.

Abstract: A method for fabricating a high-voltage transistor on a semiconductor substrate includes defining and forming shallow trench isolation regions for all of the transistors, defining and forming well regions for all of the transistors, forming a gate oxide layer in the well regions for all of the transistor, forming gates for all of the transistors over the gate oxide layer, implanting a dopant to form lightly-doped drain regions for all of the transistors, the lightly-doped drain regions for at least drains of the high-voltage transistors being spaced apart from an inner edge of the shallow trench isolation regions, forming gate spacers at sides of the gates of all of the transistors, and implanting a dopant to form sources and drains for all of the transistors, the drains of the high-voltage transistors being formed completely surrounded by the lightly-doped drain regions of the high-voltage transistors.

Abstract: A non-volatile memory cell includes a p-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel and an n-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel. In at least one of the p-channel non-volatile transistor and the n-channel non-volatile transistor, a lightly-doped drain region extends from the drain into the channel.

Abstract: A non-volatile memory cell includes a p-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel and an n-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel. In at least one of the p-channel non-volatile transistor and the n-channel non-volatile transistor, a lightly-doped drain region extends from the drain into the channel.

Abstract: A multi-state static RAM cell includes N NOR gates. Each NOR gate has N-1 inputs and one output. The output of each NOR gate is coupled to a different bit line. Each NOR gate has its inputs connected to the outputs of each of the other NOR gates.

Abstract: A high-voltage transistor includes an active region including a diffused region of a first conductivity type defined by inner edges of a border of shallow trench isolation. A gate having side edges and end edges is disposed over the active region. Spaced apart source and drain regions of a second conductivity type opposite the first conductivity type are disposed in the active region outwardly with respect to the side edges of the gate. Lightly-doped regions of the second conductivity type more lightly-doped than the source and drain regions surround the source and drain regions and extend inwardly between the source and drain regions towards the gate to define a channel, and outwardly towards all of the inner edges of the shallow trench isolation. Outer edges of the lightly-doped region from at least the drain region are spaced apart from the inner edges of the shallow trench isolation.