Abstract: A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

Abstract: A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

Abstract: A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs.

Abstract: The invention provides an assay system for identifying a hydrogen-gas-producing organism, including a sensor film having a first layer comprising a transition metal oxide or oxysalt and a second layer comprising hydrogen-dissociative catalyst metal, the first and second layers having an inner and an outer surface wherein the inner surface of the second layer is deposited on the outer surface of the first layer, and a substrate disposed proximally to the outer surface of the second layer, the organism being isolated on the substrate.

Abstract: The invention provides an improved optical system for determining the physical characteristics of a solar cell. The system comprises a lamp means for projecting light in a wide solid-angle onto the surface of the cell; a chamber for receiving the light through an entrance port, the chamber having an interior light absorbing spherical surface, an exit port for receiving a beam of light reflected substantially normal to the cell, a cell support, and an lower aperture for releasing light into a light absorbing baffle; a means for dispersing the reflection into monochromatic components; a means for detecting an intensity of the components; and a means for reporting the determination.

Abstract: An apparatus for determining the minority carrier lifetime of a semiconductor sample includes a positioner for moving the sample relative to a coil. The coil is connected to a bridge circuit such that the impedance of one arm of the bridge circuit is varied as sample is positioned relative to the coil. The sample is positioned relative to the coil such that any change in the photoconductance of the sample created by illumination of the sample creates a linearly related change in the input impedance of the bridge circuit. In addition, the apparatus is calibrated to work at a fixed frequency so that the apparatus maintains a consistently high sensitivity and high linearity for samples of different sizes, shapes, and material properties. When a light source illuminates the sample, the impedance of the bridge circuit is altered as excess carriers are generated in the sample, thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample.

Abstract: The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

Abstract: A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adja

Abstract: A multi-function process for hydrolysis and fractionation of lignocellulosic biomass to separate hemicellulosic sugars from other biomass components comprising extractives and proteins; a portion of a solubilized lignin; cellulose; glucose derived from cellulose; and insoluble lignin from said biomass comprising: a) introducing either solid fresh biomass or partially fractioned lignocellulosic biomass material with entrained acid or water into a reactor and heating to a temperature of up to about 185° C.-205° C. b) allowing the reaction to proceed to a point where about 60% of the hemicellulose has been hydrolyzed in the case of water or complete dissolution in case of acid; c) adding a dilute acid liquid at a pH below about 5 at a temperature of up to about 205° C. for a period ranging from about 5 to about 10 minutes; to hydrolyze the remaining 40% of hemicellulose if water is used. d) quenching the reaction at a temperature of up to about 140° C.

Abstract: According to the proposed invention, this technical result is achieved so that many-facet concentrator of a solar setup for exposure of objects, placed in a target plane, to the action of solar radiation containing a supporting frame and facets differing by that the facets of the concentrator are chosen with spherical focusing reflective surfaces of equal focal lengths and with selective coatings reflecting a desired spectral fraction of solar radiation, and are arranged on the supporting frame symmetrically with respect to the common axis of the concentrator, their optical axes being directed to the single point on the optical axis of the concentrator located before the nominal focus point of the concentrator and determining the position of arranging the target plane.

Abstract: A process for preparing thin Cd2SnO4 films. The process comprises the steps of RF sputter coating a Cd2SnO4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd2SnO4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd2SnO4 and CdS layers to a temperature sufficient to induce crystallization of the Cd2SnO4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd2SnO4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600° C., allowing the use of inexpensive soda lime glass substrates.

Abstract: A catalytic converter has an inner canister that contains catalyst-coated substrates and an outer canister that encloses an annular, variable vacuum insulation chamber surrounding the inner canister. An annular tank containing phase-change material for heat storage and release is positioned in the variable vacuum insulation chamber a distance spaced part from the inner canister. A reversible hydrogen getter in the variable vacuum insulation chamber, preferably on a surface of the heat storage tank, releases hydrogen into the variable vacuum insulation chamber to conduct heat when the phase-change material is hot and absorbs the hydrogen to limit heat transfer to radiation when the phase-change material is cool. A porous zeolite trap in the inner canister absorbs and retains hydrocarbons from the exhaust gases when the catalyst-coated substrates and zeolite trap are cold and releases the hydrocarbons for reaction on the catalyst-coated substrate when the zeolite trap and catalyst-coated substrate get hot.

Abstract: A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness.

Abstract: A process for producing a brightness stabilization mixture of water-soluble organic compounds from biomass pyrolysis oils comprising: a) size-reducing biomass material and pyrolyzing the size-reduced biomass material in a fluidized bed reactor; b) separating a char/ash component while maintaining char-pot temperatures to avoid condensation of pyrolysis vapors; c) condensing pyrolysis gases and vapors, and recovering pyrolysis oils by mixing the oils with acetone to obtain an oil-acetone mixture; d) evaporating acetone and recovering pyrolysis oils; e) extracting the pyrolysis oils with water to obtain a water extract; f) slurrying the water extract with carbon while stirring, and filtering the slurry to obtain a colorless filtrate; g) cooling the solution and stabilizing the solution against thermally-induced gelling and solidification by extraction with ethyl acetate to form an aqueous phase lower layer and an organic phase upper layer; h) discarding the upper organic layer and extracting the aqueous

Abstract: The refrigeration system includes a compressor-pump unit and/or a liquid-injection assembly. The refrigeration system is a vapor-compression refrigeration system that includes an expansion device, an evaporator, a compressor, a condenser, and a liquid pump between the condenser and the expansion device. The liquid pump improves efficiency of the refrigeration system by increasing the pressure of, thus subcooling, the liquid refrigerant delivered from the condenser to the expansion device. The liquid pump and the compressor are driven by a single driving device and, in this regard, are coupled to a single shaft of a driving device, such as a belt-drive, an engine, or an electric motor. While the driving device may be separately contained, in a preferred embodiment, the liquid pump, the compressor, and the driving device (i.e.

Abstract: The cabin cooling system includes a cooling duct positioned proximate and above upper edges of one or more windows of a vehicle to exhaust hot air as the air is heated by inner surfaces of the windows and forms thin boundary layers of heated air adjacent the heated windows. The cabin cooling system includes at least one fan to draw the hot air into the cooling duct at a flow rate that captures the hot air in the boundary layer without capturing a significant portion of the cooler cabin interior air and to discharge the hot air at a point outside the vehicle cabin, such as the vehicle trunk. In a preferred embodiment, the cooling duct has a cross-sectional area that gradually increases from a distal point to a proximal point to the fan inlet to develop a substantially uniform pressure drop along the length of the cooling duct.

Abstract: Computer simulation was used in the development of an inward-burning, radial matrix gas burner and heat pipe heat exchanger. The burner and exchanger can be used to heat a Stirling engine on cloudy days when a solar dish, the normal source of heat, cannot be used. Geometrical requirements of the application forced the use of the inward burning approach, which presents difficulty in achieving a good flow distribution and air/fuel mixing. The present invention solved the problem by providing a plenum with just the right properties, which include good flow distribution and good air/fuel mixing with minimum residence time. CFD simulations were also used to help design the primary heat exchanger needed for this application which includes a plurality of pins emanating from the heat pipe. The system uses multiple inlet ports, an extended distance from the fuel inlet to the burner matrix, flow divider vanes, and a ring-shaped, porous grid to obtain a high-temperature uniform-heat radial burner.

Abstract: A photovoltaic device has a buffer layer zinc stannate Zn2SnO4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Abstract: A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

Abstract: A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.