Patents Assigned to Mie Fujitsu Semiconductor Limited
  • Publication number: 20200127107
    Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor area of a first conductive type disposed in a surface layer portion of the semiconductor substrate, a gate electrode disposed over the first semiconductor area and extending in a first direction, a dummy gate electrode disposed over the semiconductor substrate away from the gate electrode and extending in the first direction, a second semiconductor area of a second conductive type disposed, in the surface layer portion of the semiconductor substrate, between the gate electrode and the dummy gate electrode, and an interconnect connected to the second semiconductor area, wherein a concentration of carrier of a first carrier type in the semiconductor substrate under the dummy gate electrode and alongside the second semiconductor area is lower than a concentration of majority carrier in the first semiconductor area, the first carrier type being a same carrier type as the majority carrier.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 23, 2020
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventor: Masaya Katayama
  • Patent number: 10573644
    Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: February 25, 2020
    Assignee: Mie Fujitsu Semiconductor Limited
    Inventor: David A. Kidd
  • Patent number: 10510824
    Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: December 17, 2019
    Assignee: Mie Fujitsu Semiconductor Limited
    Inventors: Taiji Ema, Nobuhiro Misawa, Kazuyuki Kumeno, Makoto Yasuda
  • Publication number: 20190371419
    Abstract: A control circuit controls a column decoder and a row decoder to perform reprogramming where, before the count of reprogramming operations involving erasures, each targeting one of a plurality of memory cells included in a memory cell array, reaches a predetermined number, a first extent (e.g. a sub-block) including the targeted memory cell and being smaller than the entire extent of the memory cell array is used as the unit of reprogramming, and when the count of reprogramming operations reaches the predetermined number, a second extent (e.g. the memory cell array corresponding to one sector) including the targeted memory cell and being larger than the first extent is used as the unit of reprogramming, and resets the count of reprogramming operations each time it reaches the predetermined number.
    Type: Application
    Filed: May 2, 2019
    Publication date: December 5, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Makoto Yasuda
  • Publication number: 20190363195
    Abstract: A semiconductor device includes a gate insulator layer above a semiconductor substrate, a gate electrode above the gate insulating layer, a sidewall insulator layer on sidewalls of the gate electrode and above the substrate, source and drain regions within the substrate on both sides of the gate electrode, a first region within the substrate below a part of the sidewall insulator layer closer to the source region and having an impurity concentration lower than the source region, a second region provided within the substrate below a part of the sidewall insulator layer closer to the drain region and having an impurity concentration lower than the drain region, a channel region provided within the substrate between the first and second regions, and a third region within the substrate below the channel region and including impurities of a different type and having an impurity concentration higher than the channel region.
    Type: Application
    Filed: February 12, 2019
    Publication date: November 28, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Makoto Yasuda
  • Publication number: 20190333580
    Abstract: A nonvolatile semiconductor memory device includes a selection transistor and a memory transistor that are formed on a well for each of a plurality of memory cells. At a time of a data read from the memory transistor, a first voltage is applied to the well and a source of the memory transistor, and a second voltage is applied to a gate of the selection transistor included in a non-selected memory cell among the plurality of memory cells. The first voltage is smaller than an absolute value of the second voltage.
    Type: Application
    Filed: January 31, 2019
    Publication date: October 31, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Satoshi Torii, Shu Ishihara
  • Publication number: 20190326386
    Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.
    Type: Application
    Filed: July 2, 2019
    Publication date: October 24, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Nobuhiro Misawa, Kazuyuki Kumeno, Makoto Yasudo
  • Publication number: 20190326385
    Abstract: A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.
    Type: Application
    Filed: July 2, 2019
    Publication date: October 24, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Nobuhiro Misawa, Kazuyuki Kumeno, Makoto Yasudo
  • Publication number: 20190267320
    Abstract: There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.
    Type: Application
    Filed: May 10, 2019
    Publication date: August 29, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Makoto Yasuda, Kazuhiro Mizutani
  • Patent number: 10373952
    Abstract: A semiconductor device includes first and second transistors connected to the same power supply. Each of the first and second transistors includes, under a channel region of a low concentration provided between a source region and a drain region of a first conductivity type, an impurity region of a second conductivity type having a higher concentration. The thickness of the gate insulating film in one of the first and second transistors is made larger than the thickness of the gate insulating film in the other one.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: August 6, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Makoto Yasuda, Kazushi Fujita
  • Publication number: 20190237473
    Abstract: A semiconductor device is disclosed. A gate electrode is provided above a semiconductor substrate. A sidewall insulation film is provided to the gate electrode. Source and drain regions are provided in the substrate and contain first conductive impurities. A first semiconductor region is provided in the substrate, is on a source region side, and has a concentration of the first conductive impurities lower than the source region. A second semiconductor region is provided in the substrate, is on a drain region side, and has a concentration of the first conductive impurities lower than the drain and first semiconductor regions. A channel region is provided between the first and second semiconductor regions. A third semiconductor region is provided under the channel region, and includes second conductive impurities higher in concentration than the channel region. Information is stored by accumulating charges in the sidewall insulation film.
    Type: Application
    Filed: November 27, 2018
    Publication date: August 1, 2019
    Applicant: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Makoto Yasuda
  • Patent number: 10354953
    Abstract: There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: July 16, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Taiji Ema, Makoto Yasuda, Kazuhiro Mizutani
  • Patent number: 10325986
    Abstract: An advanced transistor with punch through suppression includes a gate with length Lg, a well doped to have a first concentration of a dopant, and a screening region positioned under the gate and having a second concentration of dopant. The second concentration of dopant may be greater than 5×1018 dopant atoms per cm3. At least one punch through suppression region is disposed under the gate between the screening region and the well. The punch through suppression region has a third concentration of a dopant intermediate between the first concentration and the second concentration of dopant. A bias voltage may be applied to the well region to adjust a threshold voltage of the transistor.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: June 18, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Lucian Shifren, Pushkar Ranade, Paul E. Gregory, Sachin R. Sonkusale, Weimin Zhang, Scott E. Thompson
  • Patent number: 10250257
    Abstract: Digital circuits are disclosed that may include multiple transistors having controllable current paths coupled between first and second logic nodes. One or more of the transistors may have a deeply depleted channel formed below its gate that includes a substantially undoped channel region formed over a relatively highly doped screen layer formed over a doped body region. Resulting reductions in threshold voltage variation may improve digital circuit performance. Logic circuit, static random access memory (SRAM) cell, and passgate embodiments are disclosed.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: April 2, 2019
    Assignee: MIE Fujitsu Semiconductor Limited
    Inventors: Scott E. Thompson, Lawrence T. Clark
  • Patent number: 10249637
    Abstract: A manufacturing method of a semiconductor device includes: forming a tunnel oxide layer and a charge-storage layer in a region of a flash memory transistor; forming a first oxide film; removing the first oxide film in regions of a first transistor and a second transistor; forming a third oxide film by adding a first oxide layer between a first oxide film and a semiconductor substrate in a region of a third transistor while forming a second oxide film in the regions of the first transistor and the second transistor by oxidation; removing the second oxide film in the region of the first transistor; and forming a fifth oxide film by adding a second oxide layer between the second oxide film and the semiconductor substrate in the region of the second transistor while forming a fourth oxide film in the region of the first transistor by oxidation, and forming a sixth oxide film by adding a third oxide layer between the first oxide layer and the semiconductor substrate in the region of the third transistor.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: April 2, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Satoshi Torii, Hideaki Matsumura, Shu Ishihara
  • Patent number: 10236286
    Abstract: A semiconductor integrated circuit apparatus and a manufacturing method for the same are provided in such a manner that a leak current caused by a ballast resistor is reduced, and at the same time, the inconsistency in the leak current is reduced. The peak impurity concentration of the ballast resistors is made smaller than the peak impurity concentration in the extension regions, and the depth of the ballast resistors is made greater than the depth of the extension regions.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: March 19, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Katsuyoshi Matsuura, Junichi Ariyoshi
  • Publication number: 20190080967
    Abstract: Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced ?VT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. Additional structures, configurations, and methods presented herein can be used alone or in conjunction with the DDC to yield additional and different benefits.
    Type: Application
    Filed: September 12, 2018
    Publication date: March 14, 2019
    Applicant: Mie Fujitsu Semiconductor Limited
    Inventors: Scott E. Thompson, Damodar R. Thummalapally
  • Patent number: 10224244
    Abstract: Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced ?VT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. Additional structures, configurations, and methods presented herein can be used alone or in conjunction with the DDC to yield additional and different benefits.
    Type: Grant
    Filed: August 19, 2016
    Date of Patent: March 5, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Scott E. Thompson, Damodar R. Thummalapally
  • Patent number: 10217838
    Abstract: A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element. Different characteristics include doping concentration and depth of implant. In addition, a different characteristic may be achieved by concurrently implanting the second screening region in the second and third transistor element followed by implanting an additional dopant into the second screening region of the third transistor element.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: February 26, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Dalong Zhao, Teymur Bakhishev, Lance Scudder, Paul E. Gregory, Michael Duane, U. C. Sridharan, Pushkar Ranade, Lucian Shifren, Thomas Hoffmann
  • Patent number: 10217668
    Abstract: Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced ?VT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. Additional structures, configurations, and methods presented herein can be used alone or in conjunction with the DDC to yield additional and different benefits.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: February 26, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Scott E. Thompson, Damodar R. Thummalapally