Abstract: A method of transferring micro devices includes: aligning a detachable transfer plate by an alignment assistive mechanism; picking up the micro devices and detaching the detachable transfer plate from the alignment assistive mechanism; placing the detachable transfer plate with the micro devices thereon into a transfer head stocker capable of storing multiple detachable transfer plates; moving the transfer head stocker to a place near an another alignment assistive mechanism; disassembling the detachable transfer plate with the micro devices thereon from the transfer head stocker; moving the detachable transfer plate with the micro devices thereon to be assembled to another alignment assistive mechanism above a receiving substrate to form a device transfer assembly; aligning the micro devices on the detachable transfer plate with the receiving substrate; and transferring the micro devices to the receiving substrate by the another alignment assistive mechanism through the detachable transfer plate.

Abstract: A micro light-emitting diode display including a column of first/second micro light-emitting diodes and a first/second/third/fourth type column data line is provided. The first type column data line is configured to provide first data voltages to some of the first micro light-emitting diodes. The second type column data line is configured to provide second data voltages to a remaining of the first micro light-emitting diodes. The second type column data line is not crossed over by other data lines. The third type column data line is configured to provide third data voltages to some of the second micro light-emitting diodes. The third type column data line is not crossed over by other data lines. The fourth type column data line is configured to provide fourth data voltages to a remaining of the second micro light-emitting diodes.

Abstract: A micro light-emitting diode display including a substrate and at least one pixel and a reflective layer is provided. The substrate has at least a portion that is transparent to visible light. The pixel includes an opaque electrode, a micro light-emitting diode, and a filling material. The opaque electrode is present on the substrate. The micro light-emitting diode is present on and in contact with the opaque electrode. A vertical projection of the micro light-emitting diode projected on the substrate at least partially overlaps with a vertical projection of the opaque electrode projected on the substrate. The filling material is present on the micro light-emitting diode and the substrate. The reflective layer is present on the filling material. A vertical projection of the reflective layer projected on the substrate at least partially overlaps with said portion of the substrate.

Abstract: A method for transferring a micro device is provided. The method includes: forming a liquid layer on the micro device attached on a transfer plate; placing the micro device over a receiving substrate such that the liquid layer is between the micro device and a contact pad of the receiving substrate and contacts the contact pad; and evaporating the liquid layer such that the micro device is bound to and in contact with the contact pad.

Abstract: A method of transferring different types of micro devices is provided. The method includes: assembling a first detachable transfer plate with first type micro devices thereon to an alignment assistive mechanism which is substantially above a receiving substrate, wherein the first type micro devices face the receiving substrate; aligning the first type micro devices on the first detachable transfer plate with positions of first sub-pixels respectively of pixels on the receiving substrate by the alignment assistive mechanism; transferring the first type micro devices to the first sub-pixels on the receiving substrate; replacing the first detachable transfer plate with a second detachable transfer plate with second type micro devices thereon, wherein the second type micro devices face the receiving substrate; and transferring the second type micro devices to second sub-pixels respectively of the pixels on the receiving substrate.

Abstract: A light-emitting device driving circuit including a light emitting device, a delivery capacitor, a driving transistor, a reset circuit, a compensation circuit, and a data circuit is provided. The delivery capacitor is electrically connected to a low-level voltage. The driving transistor is configured to drive the light-emitting device according to a driving voltage received from a driving voltage line higher than that of the low-level voltage. The reset circuit is configured to determine whether to electrically connect the light-emitting device to the first node. The compensation is configured to receive a reference voltage higher than the low-level voltage to control a gate voltage of the driving transistor through a second node. The data circuit is configured to receive a data voltage to determine whether to electrically connect the data voltage to the compensation circuit and whether to electrically connect the data voltage to the delivery capacitor.

Abstract: A pixel encapsulating structure including a substrate, three light-emitting devices, a filling material, and a first encapsulation layer is provided. The three light-emitting devices are present on the substrate. Two of the three light-emitting devices have different emission wavelengths. The filling material is present on the substrate and the three light-emitting devices. The first encapsulation layer is present on the filling material and covers the three light-emitting devices. One of the first encapsulation layer and the filling material has three portions respectively covering the three light-emitting devices, and two of the three portions have different refractive indices.

Abstract: A method for transferring a micro device is provided. The method includes: preparing a transfer plate with the micro device thereon in which the micro device is in contact with a picked-up surface of the transfer plate; forming a structure including the micro device, a contact pad of a receiving substrate, and some water therebetween in which two opposite surfaces of the water are respectively in contact with the micro device and a bound surface of the contact pad, and a hydrophilicity of the bound surface of the contact pad facing the transfer plate is greater than a hydrophilicity of the picked-up surface of the transfer plate facing the receiving substrate; and evaporating the water such that the micro device is bound to and in contact with the contact pad.

Abstract: A pixel encapsulating structure including a substrate, a first light-emitting device, a second light-emitting device, and a filling material is provided. The first light-emitting device is on the substrate. The second light-emitting device is on the substrate. The first light-emitting device and the second light-emitting device have different emission wavelengths. The filling material is on the substrate, the first light-emitting device, and the second light-emitting device. The filling material has two portions respectively covering the first light-emitting device and the second light-emitting device, and said two portions have different refractive indices.

Abstract: A light-emitting device display comprising a first light-emitting device and a second light emitting device is provided. The first light-emitting device and the second light-emitting device have a first forward voltage and a second forward voltage respectively, and the second forward voltage is higher than the first forward voltage. A first scan voltage and a second scan voltage is respectively provided to the first light-emitting device and the second light-emitting device. The first scan voltage is switched between a first scan-on voltage and a first scan-off voltage. The second scan voltage is switched between a second scan-on voltage and a second scan-off voltage. An absolute value of a difference between the second scan-on voltage and the second scan-off voltage is greater than an absolute value of a difference between the first scan-on voltage and the first scan-off voltage.

Abstract: An electrical joint structure including a substrate, a multi-layer bonding structure, and a blocking layer is provided. The multi-layer bonding structure is present on the substrate and includes a diffusive metal layer and a tin-rich layer. The diffusive metal layer includes a copper-tin alloy on a surface of the diffusive metal layer. The surface faces the substrate. A thickness of the copper-tin alloy is less than or equal to 2 ?m. The tin-rich layer is present on and in contact with the diffusive metal layer. The blocking layer is present between the multi-layer bonding structure and the substrate and at least in contact with a part of said copper-tin alloy, such that the multi-layer bonding structure is spaced apart from the substrate.

Abstract: A method of transferring micro devices includes: aligning a detachable transfer plate to a carrier substrate with micro devices thereon by an alignment assistive mechanism which is detachably assembled with the detachable transfer plate; contacting the detachable transfer plate to the micro devices on the carrier substrate by the alignment assistive mechanism; picking up the micro devices from the carrier substrate; detaching the detachable transfer plate with the micro devices thereon from the alignment assistive mechanism; moving the detachable transfer plate with the micro devices thereon to be assembled to another alignment assistive mechanism above a receiving substrate to form a device transfer assembly; aligning the micro devices on the detachable transfer plate with the receiving substrate; and transferring the micro devices to the receiving substrate by the another alignment assistive mechanism through the detachable transfer plate.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first type semiconductor layer and a second type semiconductor layer. The first type semiconductor layer includes at least one low resistance portion and a diffuse type high resistance portion. The low resistance portion extends between and reaches a first surface and a second surface of the first type semiconductor layer. The diffuse type high resistance portion extends between and reaches the first surface and the second surface. A thickness of the first type semiconductor layer is less than half of a lateral length of the low resistance portion on the first surface. The low resistance portion and the diffuse type high resistance portion form an interface therebetween on the first surface. A concentration of a guest material starts decreasing from the interface toward the low resistance portion.

Abstract: A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a gate, a gate insulator, a semiconductor layer, a drain electrode, and a source electrode. The gate insulator has a thickness less than or equal to about 500 angstroms. The micro light-emitting diode has a lateral length less than or equal to about 50 ?m and is electrically connected to one of the source electrode and the drain electrode. A current injection channel is extended within one of a first type semiconductor layer and a second type semiconductor layer of the micro light-emitting diode and is spaced apart from a side surface of the micro light-emitting diode. A lateral length a light-emitting portion of an active layer of the micro light-emitting diode is less than or equal to about 10 ?m.

Abstract: A method of liquid assisted micro cold binding is provided. The method includes: forming a conductive pad on the substrate in which the conductive pad consists essentially of indium; forming a liquid layer on the conductive pad; placing a micro device having an electrode facing the conductive pad over the conductive pad such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the conductive pad in which the electrode consists essentially of indium; and evaporating the liquid layer such that the electrode is bound to the conductive pad and is in electrical contact with the conductive pad.

Abstract: An alternating self-compensation circuit including a light-emitting device, a first driving circuit, and a second driving circuit is provided. The first driving circuit is configured to function and to drive the light-emitting device during a first time period. The second driving circuit is configured to function and to drive the light-emitting device during a second time period. The first driving circuit and the second driving circuit are electrically and separately connected to one of two ends of the light-emitting device, and the first time period and the second time period are at least partially overlapped in time. The first driving circuit includes a delivery capacitor, a driving transistor, a reset circuit, a compensation circuit, and a data circuit. The second driving circuit also includes a delivery capacitor, a driving transistor, a reset circuit, a compensation circuit, and a data circuit.

Abstract: A method for manufacturing a light emitting device is provided. The method includes: preparing a growth substrate with at least one dislocation-controlling feature thereon; sequentially growing a second type semiconductor layer, an active layer, and a first type semiconductor layer on the dislocation-controlling feature, wherein the active layer has a first region and at least one second region, and the dislocation-controlling feature causes a threading dislocation density of the first region to be greater than a threading dislocation density of the second region; and modifying a resistivity of the first type semiconductor layer, so that the resistivity of the first type semiconductor layer increases from a plurality of low resistance portions toward a high resistance portion of the first type semiconductor layer.

Abstract: An electrostatic chuck including a body, an electrode, at least one dielectric layer, and a composite dielectric layer is provided. The electrode is present on the body. The dielectric layer is present on and covers the electrode. The composite dielectric layer is present on the dielectric layer. The composite dielectric layer includes a polymer layer and a plurality of inorganic dielectric particles. The inorganic dielectric particles are distributed within the polymer layer, and a permittivity of the inorganic dielectric particles is greater than a permittivity of the polymer layer. A resistivity of the dielectric layer is greater than a resistivity of the composite dielectric layer.

Abstract: A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a bottom gate, a gate insulator, a semiconductor layer, an etch stopper, a drain electrode, a source electrode, and an insulating layer. The drain electrode is ring-shaped and a contact portion between the drain electrode and the semiconductor layer surrounds the semiconductor layer. The source electrode is in contact with the semiconductor layer and is enclosed by the drain electrode. The insulating layer has a via therein to expose a portion of the source electrode. The micro light-emitting diode is electrically connected to the source electrode. The micro light-emitting diode includes a current injection channel present in the micro-light emitting diode. The current injection channel is separated from a side surface of the micro light-emitting diode.

Abstract: A method for minimizing an average surface includes: forming an epitaxial layer on a growth substrate; forming the soft metal layer on the epitaxial layer in which the average surface roughness of a bonding surface of the soft metal layer is greater than a first value; forming a glue layer on a carrier substrate; placing a combination of the glue layer and the carrier substrate on the bonding surface in which the glue layer being in contact with the bonding surface of the soft metal layer; and applying an external pressure to compress the glue layer and the soft metal layer such that the average surface roughness of the bonding surface of the soft metal layer is reduced from the first value to a second value, wherein the second value is less than 80 nm.