Abstract: A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate so that the micro device is in contact with the liquid layer and is gripped by a capillary force.

Abstract: A method for minimizing an average surface includes: forming an epitaxial layer on a growth substrate; forming the soft metal layer on the epitaxial layer in which the average surface roughness of a bonding surface of the soft metal layer is greater than a first value; forming a glue layer on a carrier substrate; placing a combination of the glue layer and the carrier substrate on the bonding surface in which the glue layer being in contact with the bonding surface of the soft metal layer; and performing a laser lift-off process to separate the growth substrate from the epitaxial layer such that the average surface roughness of the bonding surface of the soft metal layer is reduced to be less than a second value. The second value is smaller than the first value, and the second value is less than 80 nm.

Abstract: A micro light-emitting diode driving circuit including a micro light-emitting diode, a driving circuit, and a digital-to-analog converter is provided. The driving circuit includes a driving transistor electrically coupled to the micro light-emitting diode in series. The digital-to-analog converter is electrically coupled to a gate terminal of the driving transistor and is configured to provide grayscale voltage levels of the micro light-emitting diode to the driving circuit and the micro light-emitting diode. The grayscale voltage levels are determined by a gamma curve. A driving voltage is applied to the driving transistor and the micro light-emitting diode, such that at least one-sixteenth of the whole grayscale voltage levels of the micro light-emitting diode is within a linear region of at least one of current-voltage curves of the driving transistor. An accessible working range of the micro light-emitting diode is about 2 volts.

Abstract: A method for binding a micro device on a substrate is provided. The method includes forming a conductive pad on the substrate; forming an elevated bonding layer on the conductive pad; lowering a temperature of the elevated bonding layer in an environment comprising a vapor such that at least a portion of the vapor is condensed to form a liquid layer on the elevated bonding layer; disposing the micro device over the elevated bonding layer such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the elevated bonding layer, wherein the micro device comprises an electrode facing the elevated bonding layer; and evaporating the liquid layer such that the electrode is bound to the elevated bonding layer and is in electrical connection with the conductive pad.

Abstract: A transfer head is provided. The transfer head includes a body having a plurality of arrays of grip regions with each of the arrays comprising at least two columns of the grip regions. The grip regions in one of the columns are electrically connected in series. The columns in one of the arrays are controlled by a single voltage source, and the columns in two of the arrays are controlled by two voltage sources respectively.

Abstract: A method for transferring a plurality of micro devices e is provided. The method includes picking up the micro devices from a carrier substrate by a transfer head, and iteratively performing a placing process. The placing process includes moving the transfer head to a position, at which an array of the micro devices is positioned over an array of receiving locations of a receiving substrate, and placing said array of the micro devices onto the array of the receiving locations of the receiving substrate.

Abstract: A micro light-emitting diode driving circuit including a micro light-emitting diode, a first driving transistor, and a second driving transistor is provided. The first driving transistor receives a first driving voltage from a first driving voltage source, and is electrically connected to the micro light-emitting diode and a low voltage source. The second driving transistor receives a second driving voltage from a second driving voltage source, and is electrically connected to the micro light-emitting diode and a low voltage source. One terminal of the first driving transistor and one terminal of the second driving transistor are electrically and separately connected to one end of the micro light-emitting diode, and a lateral length of the micro light-emitting diode is less than or equal to 50 ?m.

Abstract: A method for avoiding crack formation during a laser lift-off process is provided. The method includes: forming a composite glue layer on a carrier substrate in which the composite glue layer includes an ultraviolet glue and fillers therein and a Young's modulus of the fillers is greater than a Young's modulus of the ultraviolet glue; placing a semiconductor structure onto the composite glue layer in which the semiconductor structure includes a growth substrate, an epitaxial layer present on the growth substrate, and a metal layer present on the epitaxial layer, wherein placing the semiconductor structure makes the metal layer be in contact with and attached to the composite glue layer; and performing the laser lift-off process to separate the growth substrate from the epitaxial layer.

Abstract: A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

Abstract: A micro-bonding structure including a substrate, a conductive pad, a bonding layer, a micro device, and a diffusive bonding portion is provided. The conductive pad is on the substrate. The bonding layer is on the conductive pad. A thickness of the bonding layer ranges from about 0.2 ?m to about 2 ?m. The micro device is on the bonding layer. The diffusive bonding portion is between and electrically connected with the bonding layer and the conductive pad. The diffusive bonding portion consists of at least a part of elements from the bonding layer and at least a part of elements from the conductive pad. A plurality of voids are between the bonding layer and the conductive pad, and one of the voids is bounded by the diffusive bonding portion and at least one of the conductive pad and the bonding layer.

Abstract: A transfer head array includes a body and a plurality of transfer heads. The body includes a base portion and at least one wall portion. The wall portion is located on and stationary to the base portion. The wall portion has a top surface. The transfer heads are located on the top surface of the wall portion. The wall portion is continuous at least between two of the transfer heads.

Abstract: A micro-bonding structure including a substrate, a conductive pad, a bonding layer, a micro device, and a diffusive bonding portion is provided. The conductive pad is present on the substrate. The bonding layer is present on the conductive pad. The micro device is present on the bonding layer. The diffusive bonding portion is present between and electrically connected with the bonding layer and the conductive pad. The diffusive bonding portion consists of at least a part of elements from the bonding layer and at least a part of elements from the conductive pad. A plurality of voids are present between the bonding layer and the conductive pad, and one of the voids is bounded by the diffusive bonding portion and at least one of the conductive pad and the bonding layer.

Abstract: A light-emitting diode includes semiconductor layers and electrodes. A first type semiconductor layer includes first and second low resistance portions and a high resistance portion therebetween. The high resistance portion encloses the first low resistance portion and is configured to confine charge carriers substantially within the first low resistance portion. A resistivity of the first type semiconductor layer increases from the first low resistance portion toward the high resistance portion and decreases from the high resistance portion toward the second low resistance portion. A first electrode is electrically connected to the first low resistance portion and substantially no current flows between the first electrode and the second low resistance portion. A portion of the first type semiconductor layer is between the first electrode and a second type semiconductor layer. A second electrode is electrically connected to the second type semiconductor layer.

Abstract: A light emitting device is provided. The light emitting device includes a first type semiconductor layer, a second type semiconductor layer, an active layer, a plurality of first electrodes, and a second electrode. The first type semiconductor layer includes a plurality of low resistance portions and a high resistance portion. The low resistance portions are isolated from one another by the high resistance portion. The active layer is present between the first type semiconductor layer and the second type semiconductor layer. The active layer includes a first region and at least one second region. A threading dislocation density of the first region is greater than a threading dislocation density of the second region, and a vertical projection of at least one of the low resistance portions on the active layer at least partially overlaps with the second region.

Abstract: A display device includes a substrate, at least one bonding electrode, at least one LED device electrically connected to the bonding electrode, and a transparent conductive layer. The bonding electrode is between the LED device and the substrate. The LED device includes a n type semiconductor layer, a p type semiconductor layer between the n type semiconductor layer and the bonding electrode, and an intermediate layer. The p type semiconductor layer includes a high resistance portion and a low resistance portion enclosed by the high resistance portion. A resistivity of the p type semiconductor layer increases from the low resistance portion toward the high resistance portion. The intermediate layer is between the p type semiconductor layer and the bonding electrode. The transparent conductive layer is electrically connected to the n type semiconductor layer. The LED device is between the transparent conductive layer and the bonding electrode.

Abstract: A method for binding a micro device to a substrate is provided. The method includes: locally showering a gas on a portion of the substrate, wherein the gas has a water vapor pressure higher than an ambient water vapor pressure; and placing the micro device over the portion of the substrate after a part of water in the gas is condensed to form a liquid layer on the portion of the substrate and contacting the micro device with the liquid layer, so that the micro device is gripped by a capillary force produced by the liquid layer and is substantially held in a position within a controllable region on the substrate.

Abstract: A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.

Abstract: A method for transferring a device includes the following steps: forming a pliable adhesive layer on a carrier substrate; placing the device over the pliable adhesive layer; contacting a transfer head assembly with the device, in which a pliable dielectric layer of the transfer head assembly is in contact with the device during the contacting and more pliable than the device, such that the pliable dielectric layer of the transfer head assembly deforms during the contacting, and the pliable adhesive layer is more pliable than the device, such that the pliable adhesive layer deforms during the contacting; actuating the transfer head assembly to create a grip force; picking up the device by the grip force created by the transfer head assembly; and placing the device onto a receiving substrate.

Abstract: A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, and an active layer. The first type semiconductor layer includes a low resistance portion and a high resistance portion. The low resistance portion is separated from at least one edge of the first type semiconductor layer by the high resistance portion, and the resistivity of the first type semiconductor layer is increased from the low resistance portion toward the high resistance portion. The active layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The active layer has a first region and a second region, in which the first region has a threading dislocation density greater than that of the second region, and a vertical projection of the low resistance portion on the active layer at least partially overlaps with the second region.

Abstract: A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer.