Patents Assigned to Mitsubishi Materials Corporation
  • Patent number: 5813844
    Abstract: The present invention relates to an oil pump rotor for an oil pump provided with an inner rotor 10 to which n (n is a natural number) outer teeth 11 are formed, an outer rotor 20 to which n+1 inner teeth 21 are formed which engage with each of the outer teeth 11, and a casing 30 in which an intake port 31 for taking up fluid and an expulsion port 32 for expelling fluid are formed, wherein:the outer teeth 11 of inner rotor 10 are formed along an envelope described by a generated group of circles having centers positioned on a trochoid curve generated within the limits satisfying the following expression:0.15.ltoreq.n.multidot.R/(p.multidot.D).ltoreq.0.25where D is the diameter of the circle which passes through each of the tips of the outer teeth and R is the radius of the generated circle measured in millimeters, while p is .pi..
    Type: Grant
    Filed: December 12, 1996
    Date of Patent: September 29, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Katsuaki Hosono, Manabu Katagiri
  • Patent number: 5810981
    Abstract: There is provided a hydrogen occluding alloy exhibiting high absorption and desorption speeds. A hydrogen occluding alloy comprising as an overall composition: 25 to 45 weight % Zr+Hf, wherein the Hf comprises not more than 4%, 1 to 15 weight % Ti, 10 to 20 weight % Mn, 2 to 12 weight % V, 0.6 to 5 weight % rare earth elements, and a balance Ni (of which content is not less than 25 weight %) and unavoidable impurities, and basically having a three-phase structure consisting of: a net-shaped continuous phase which is made of a Ni--Zr type alloy, a main phase (in the net-shaped continuous phase) made of a Zr--Ni--Mn based alloy, and a dispersed granular phase made of a rare earth elements-Ni type alloy distributed along the net-shaped continuous phase.
    Type: Grant
    Filed: March 8, 1996
    Date of Patent: September 22, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Norikazu Komada, Mitsugu Matsumoto, Shinichiro Kakehashi, Yoshitaka Tamo, Chris N. Christodoulou
  • Patent number: 5810897
    Abstract: A spray tower includes inner and outer tubes arranged coaxial with each other on a common vertical axis. At the lower end of the inner tube is provided a guide cylinder group composed of a plurality of guide cylinders which are arranged coaxially with each other on a common vertical axis. A guide vane is provided under the guide cylinder group. The guide vane is in a shape of inverted truncated cone whose diameter is reduced in a downward direction. Accordingly, gas flowing downward between the inner and outer tubes is uniformly divided under the guide cylinder group by means of the guide vane so that the divided gases flows upward uniformly inside the respective cylinders. A plurality of vertical rectifying plates may be provided to the guide cylinder group so as to extend radially from the vertical axis of the guide cylinder group for reducing pressure loss.
    Type: Grant
    Filed: August 31, 1995
    Date of Patent: September 22, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Kazumi Konosu, Koichiro Uno
  • Patent number: 5807495
    Abstract: Dielectrics represented by (Sr.sub.x Bi.sub.1-x)Bi.sub.2 Ta.sub.2 O.sub.y, wherein 0<x<1, and y represents the total number of oxygen atoms bonded to the respective metals, and thin films thereof, can be prepared by repeating the steps of applying compositions for forming the Sr--Bi--Ta--O-based dielectric thin films on substrates, drying and conducting a first-firing a plurality of times until the desired film thickness is achieved, and then conducting a second-firing for crystallization and compositions for forming Bi-based ferroelectric thin films and target materials for forming Bi-based ferroelectric thin films, both represented by the metal composition ((Sr.sub.a (Ba.sub.b, Pb.sub.c)).sub.x Bi.sub.y (Ta and/or Nb).sub.z wherein 0.4.ltoreq.X<1.0, 1.5.ltoreq.Y.ltoreq.3.5, Z=2, 0.7X.ltoreq.a<X, and 0<b+c.ltoreq.0.
    Type: Grant
    Filed: May 22, 1996
    Date of Patent: September 15, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Katsumi Ogi, Tadashi Yonezawa, Tsutomu Atsuki
  • Patent number: 5804495
    Abstract: A silicon wafer for the volume production of integrated circuit devices has a lattice network of chip separating structure containing a plurality of rectangular-shaped cavities which is filled completely with silicon single crystals to form single crystal layer sections of the same height as the depth of the lattice network. Both the cavities and the single crystal layer sections are dimensioned to suit the planar dimensions of an integrated circuit device chip to be used for volume production.
    Type: Grant
    Filed: January 5, 1995
    Date of Patent: September 8, 1998
    Assignees: Mitsubishi Materials Corporation, Mitsubishi Materials Silicon Corporation
    Inventors: Yuichi Saito, Kenichi Kawai
  • Patent number: 5805626
    Abstract: Single-crystal lithium tetraborate (single-crystal Li.sub.2 B.sub.4 O.sub.7 or single-crystal LBO) as an optical converter device which stably operates for a long term, has a long life, and is compact, light and inexpensive, an optical converter device using the single crystal LBO, especially, for emitting light having a wavelength of 500 nm or less, and an optical apparatus using the optical converter device. Coherent light irradiates the light incident face of the single-crystal LBO at a predetermined incident angle, which single-crystal LBO is cut at a predetermined plane to the optical axis in order to satisfy a predetermined phase matching angle, and light having a half wavelength of the incident light is emitted. Preferably, the single-crystal LBO has a refractive index variation of 10.sup.-5 /mm or less and/or a etch-pit density of approximately 1.times.10.sup.3 /cm.sup.2.
    Type: Grant
    Filed: September 20, 1996
    Date of Patent: September 8, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Ryuichi Komatsu, Tamotsu Sugawara, Masakuni Takahashi
  • Patent number: 5799685
    Abstract: A tank 1 having a valve 6 in a head portion 4 and protected by a substantially cylindrical head skirt portion 7 is accommodated in a protective container 2. A load receiving member 23 having a projection 23c, to which a free end 7a of the head skirt portion 7 is fixed, is disposed between the head skirt portion 7 and the head support member 11. The head support member 11 is formed into a triple-layer structure formed by stacking, when viewed from the tank, a first layer having strong deformation resistance, and second and third layers 15 and 16 having weak deformation resistance. The second layer 15 includes an annular outer layer 15a having deformation resistance weaker than that of the first layer and an inner layer 15b fitted in the central space and having much weaker deformation resistance. The third layer 16 is made of the same material as that of the outer layer of the second layer. A rotation-stopper 20 is provided for the head skirt portion 7 so as to be attached to the protective container 2.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: September 1, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Youichi Tezuka, Shoichi Tanaka, Makoto Wakaki, Akihiko Osako, Kazuhito Nakamura
  • Patent number: 5798008
    Abstract: A method for producing copper alloy materials for molds for continuous steel casting and molds as produced by the method. The molds are highly resistant to thermal fatigue and are hardly cracked. To produce the materials, cast ingots of a copper-based chromium-zirconium alloy comprising from 0.2 to 1.5% by weight of Cr and from 0.02 to 0.2% by weight of Zr are heated at between 900.degree. C. and 1000.degree. C. for 30 minutes or longer and then rolled, while hot, at a reduction ratio of 60% or more to be at 850.degree. C. or higher at which the hot rolling is finished , and immediately after the hot rolling, these are rapidly cooled to 400.degree. C. or lower at a cooling rate of 10.degree.C./sec or more, and then aged at between 400.degree. C. and 520.degree. C. for from 1 hour to 5 hours.
    Type: Grant
    Filed: July 15, 1996
    Date of Patent: August 25, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Keishi Nogami, Masato Koide, Takashi Morimoto, Yutaka Koshiba
  • Patent number: 5797638
    Abstract: An annular member hoist apparatus which lifts an annular member and carries and positions the annular member at a predetermined location by a carrier apparatus fitted with an elevator mechanism, including a suspension member suspended from the elevator mechanism, and a plurality of support arms which extend out radially in a horizontal plane from the suspension member. Each of the support arms has an engagement tip portion for supporting the annular member from inside the annular member.
    Type: Grant
    Filed: March 24, 1997
    Date of Patent: August 25, 1998
    Assignees: Mitsubishi Materials Silicon, Mitsubishi Materials Corporation
    Inventors: Masakazu Yamazaki, Michio Yanaba, Hiroaki Taguchi, Takashi Atami, Hisashi Furuya
  • Patent number: 5791831
    Abstract: A cutting insert having a generally polygonal tabular form, includes a main cutting edge formed along at least one of the ridges or edges of the upper and lower surfaces which oppose each other in the direction of the thickness of the tabular form, and a face connected to the main cutting edge is formed on the flank or flanks which surround and define the upper and lower surfaces. The face includes a convex curved surface and an angle of intersection between the convex curved surface and one of the upper and lower surfaces progressively changes. The angle of intersection between the convex curved surface and one of the upper and lower surfaces progressively increases or decreases along the length of the face from the face end adjacent to a free end of the tool to a face end adjacent to the base end of the tool. In a preferred embodiment, a flat surface is disposed on each side of the convex curved surface and each flat surface intersects one of the upper and lower surfaces at a constant angle.
    Type: Grant
    Filed: August 30, 1996
    Date of Patent: August 11, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Takamasa Shimano, Tatsuo Arai, Takayoshi Saito
  • Patent number: 5792592
    Abstract: A photosensitive liquid solution is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the. The photosensitive liquid solution is applied to a substrate, soft baked, and exposed to ultraviolet radiation under a photo mask. The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.
    Type: Grant
    Filed: May 24, 1996
    Date of Patent: August 11, 1998
    Assignees: Symetrix Corporation, Mitsubishi Materials Corporation
    Inventors: Hiroto Uchida, Nobuyuki Soyama, Kensuke Kageyama, Katsumi Ogi, Michael C. Scott, Larry D. McMillan, Carlos A. Paz de Araujo
  • Patent number: 5788924
    Abstract: A wear resistant copper alloy composition which includes:______________________________________ Component (% by weight) ______________________________________ Zn 20 to 40 Al 2 to 11 at least one iron family metal 1 to 5 selected from Fe, Ni, and Co Ti 0.1 to 4 Component X, which is at least one Mn = 0.01 to less than 0.1 of Mn or S, in the amounts S = 0.0005 to 0.01 indicated Cu (with unavoidable impurities) balance. ______________________________________The copper alloy, which contains as an optional component Mg (from 0.01 to 0.5% by weight), is particularly suitable for manufacturing synchronizer rings in automatic transmissions for internal combustion engines.
    Type: Grant
    Filed: October 25, 1995
    Date of Patent: August 4, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Masao Kobayashi, Yoshiharu Mae
  • Patent number: 5788757
    Abstract: A metal organic liquid precursor solution includes metal organic complexes dispersed in an ester solvent. The ester solvent has medium length carbon chains to prevent the precipitation of strongly electropositive metals in solution. A liquid precursor solution is used to make thin film metal oxides of uniform thickness and consistent quality.
    Type: Grant
    Filed: December 23, 1996
    Date of Patent: August 4, 1998
    Assignees: Symetrix Corporation, Mitsubishi Materials Corporation
    Inventors: Hiroto Uchida, Nobuyuki Soyama, Kensuke Kageyama, Katsumi Ogi, Jeffrey W. Bacon, Michael C. Scott, Larry D. McMillan, Carlos A. Paz de Araujo
  • Patent number: 5789843
    Abstract: An electrostatic levitating electrode (10) is split into four equal segments on a circular insulating substrate (4) with isolating strips (11a, 11b) interposed between them. A positive voltage and a negative voltage are alternately applied to these four electrodes (10a, 10b, 10c, 10d), which are sector-shaped. In order to prevent the concentration of electric charge in such case, the corner portions of the sector-shaped electrodes (10a, 10b, 10c, 10d) are formed to have roundness (13). Furthermore, a lead wire (12a) is connected to the outer side of the sector-shaped electrode (10a), a lead wire (12b) is connected to the outer side of the sector-shaped electrode (10b), a lead wire (12c) is connected to the outer side of sector-shaped electrode (10c), and a lead wire (12d) is connected to the outer side of sector-shaped electrode (10d).
    Type: Grant
    Filed: October 30, 1995
    Date of Patent: August 4, 1998
    Assignees: Kanagawa Academy of Science and Technology, Mitsubishi Materials Corporation
    Inventors: Toshiro Higuchi, Ju Jin, Manabu Kanemoto
  • Patent number: 5786025
    Abstract: High-purity MTiO.sub.3 (M=Sr and/or Ba)-type dielectric thin films with improved electric characteristics, particularly leakage currents and dielectric breakdown voltages, are prepared by MOCVD. Either or both a high-purity bis (.beta.-diketonato) Sr and Ba complexes, which each contain 1 ppm or less of each alkali metal and an alkaline earth metal as impurity metals, are used as the metal M supply sources. The high-purity volatile complexes are prepared by heat decomposition Sr or Ba nitrate (or acetate), which has been purified by a combination of recrystallization and ion-exchange chromatography, to contain 1 ppm or less of each alkali metal and alkaline earth metal as impurity metals, to thereby prepare high-purity SrO or BaO. The SrO or BaO is then reduced to high-purity metallic Sr or Ba by the thermit process, and then the metallic Sr or Ba is reacted with a .beta.-diketone to form the bis(.beta.-diketonato) complexes.
    Type: Grant
    Filed: September 9, 1996
    Date of Patent: July 28, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Norimiti Saitou, Hiroto Uchida, Katsumi Ogi
  • Patent number: 5780162
    Abstract: An aluminum nitride (AlN) substrate comprising an AIN sinter, an Al.sub.2 O.sub.3 layer provided on the sinter, and a glass-mixed Al.sub.2 O.sub.3 layer which is provided on the Al.sub.2 O.sub.3 layer and contains Al.sub.2 O.sub.3 and glass mixed therewith, preferably with an oxide particle-dispersed glass layer and a main glass layer provided on the glass-mixed Al.sub.2 O.sub.3 layer. The AlN substrate has heat dissipation properties closer to those of AlN itself, does not cause generation of air bubbles at the junction interface between the AlN sinter and the glass-containing layer, and has excellent surface smoothness and corrosion resistance. The very fine conductive layer, etc. may be readily and firmly formed on the substrate in a stable manner.
    Type: Grant
    Filed: June 13, 1995
    Date of Patent: July 14, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Seiji Toyoda, Yoshirou Kuromitsu, Kunio Sugamura, Akira Nakabayashi
  • Patent number: 5779792
    Abstract: The present invention provides an improved single crystal pulling apparatus for pulling a single crystal semiconductor such as silicon or gallium arsenide. The apparatus of the present invention comprises a gas tight container, a crucible which is disposed inside the container, a heater, and a pair of coils to apply a cusp magnetic field in the semiconductor melt. The crucible is separated into two regions by a cylindrical partition body, and an outside region is used to supply source material and to melt the source material and an inside region is used for pulling up the single crystal. The inside and outside regions are communicated with the communication passage provided at the bottom of the partition body. Electrical currents in opposing directions are applied to a pair of coils for generating in the melt a cusp magnetic field which includes a vertical portion and a horizontal portion relative to the crucible.
    Type: Grant
    Filed: January 10, 1997
    Date of Patent: July 14, 1998
    Assignees: Mitsubishi Materials Silicon Corporation, Mitsubishi Materials Corporation
    Inventors: Takashi Atami, Hisashi Furuya, Michio Kida
  • Patent number: 5776407
    Abstract: A mold assembly has a fixed mold incorporating a base with a movable member supported thereon so as to be movable relative thereto and which is closed against a movable mold by a spring. A protrusion on the base passing through the movable member, and a recess on the movable mold engage to form a cavity. A runner and a gate are formed between the movable member and movable mold. Resin is filled into the cavity with the mold lightly closed and the movable member and movable mold closed, but with the movable member and base apart. During filing, the movable member and base open under resin pressure which is held constant inside the cavity. The movable member and base are then closed and when the gate closes with engagement of the protruding and recess portions, a constant amount of resin remains in the mold cavity, which is then compressed.
    Type: Grant
    Filed: September 26, 1996
    Date of Patent: July 7, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventor: Yoshinobu Takeda
  • Patent number: 5773711
    Abstract: An internal pressure inspection is simply conducted for cans of types different in dimension and for assuredly removing defective cans. The inspection apparatus comprises first and second can barrel pressure detectors and a can cover pressure detector for detecting the internal pressure of a can, and a can sensor for sensing a can, which underwent the detection of the internal pressure, to output a can sense signal. In the inspection apparatus, a control unit decides the acceptance or failure in the can internal pressure and, when the failure decision is made, starts a defective can removal unit on the basis of the can sense signal from the can sensor. An apparatus body has a separation change mechanism including a width variable gauge which is placed between first and second movable frames and which can change its own width in accordance with its own rotation. The first and second movable frames and which can change its own width in accordance with its own rotation.
    Type: Grant
    Filed: January 9, 1997
    Date of Patent: June 30, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Hideo Itoh, Mithuo Yokoyama, Saburo Itoh, Fumihiko Usui
  • Patent number: 5772440
    Abstract: The present invention relates to a compact and precise binary information display device having a simple structure at low cost.The device includes a drive mechanism (13) to extrude and retract pins (11) from and into a display surface (12a). The drive mechanism is composed of a linear cam (16) to be moved orthogonal to the axis of the pins (11) and to move the pins (11) in their axial direction. The display device has a linear movement mechanism (17) including a stepper motor (20) for moving the linear cam (16) linearly, a conversion mechanism (21) for converting a rotary motion of a shaft (19) of the stepper motor (20) into a linear motion of the linear cam (16), and a reset mechanism (22) for setting an original position of the stepper motor (20) when the linear cam (16) reaches a reference position. Downsizing of the device is enabled by reducing the dimension thereof in the crosswise direction and the entire device is simplified by eliminating a rotational position detector.
    Type: Grant
    Filed: September 29, 1995
    Date of Patent: June 30, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventor: Takashi Ida