Abstract: A method for manufacturing a semiconductor device according to the present invention includes at least the following three steps: (A) a step of preparing a first structure (100) including an adhesive laminate film (50) having a heat-resistant resin layer (10), a flexible resin layer (20) and an adhesive resin layer (30) in this order, and a first semiconductor component (60) adhered to the adhesive resin layer (30) and having a first terminal (65); (B) a step of performing solder reflow processing on the first structure (100) in a state where the first semiconductor component (60) is adhered to the adhesive resin layer (30); and (C) a step of, after the step (B), peeling the heat-resistant resin layer (10) from the adhesive laminate film (50).

Abstract: The invention provides a sensor capable of detecting deformation. The deformation sensor has a structure in which an ion-conductive polymer layer is sandwiched between soft electrodes, wherein non-uniform ion distribution is generated in the ion-conductive polymer layer by deformation, thereby generating a potential difference between the electrodes.

Abstract: A solar cell sealing material of the present invention is a solar cell sealing material that is used to seal a solar cell element and includes an ethylene.?-olefin copolymer, an organic peroxide (A) having a one-hour half-life temperature in a range of equal to or higher than 100° C. and equal to or lower than 130° C., and an organic peroxide (B) having a one-hour half-life temperature in a range of higher than 130° C. and equal to or lower than 160° C., and a ratio (X2/X1) of a content X2 of the organic peroxide (B) to a content X1 of the organic peroxide (A) in the solar cell sealing material is equal to or more than 0.05 and equal to or less than 1.10.

Abstract: Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer, an unevenness-absorptive resin layer, and an adhesive resin layer in this order and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component such that the circuit forming surface is protected; and a step of forming an electromagnetic wave-shielding layer on the electronic component in a state of being attached to the adhesive laminated film.

Abstract: Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer and an adhesive resin layer and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component; a step of back-grinding a surface of the electronic component opposite to the circuit forming surface in a state of being attached to the adhesive laminated film; a step of dicing the electronic component in a state of being attached to the adhesive laminated film; and a step of forming an electromagnetic wave-shielding layer on the separated electronic components in a state of being attached to the adhesive laminated film, in this order.

Abstract: An adhesive laminate film has a heat-resistant resin layer, a flexible resin layer, and an adhesive resin layer in this order, a peel strength P0 between the heat-resistant resin layer and the flexible resin layer, which is based on JIS Z0237 and measured under defined conditions, is equal to or more than 0.01 N/25 mm and equal to or less than 2.0 N/25 mm, and a peel strength P1 between the heat-resistant resin layer and the flexible resin layer after a thermal treatment of the adhesive laminate film at 160° C. for four hours is equal to or more than 0.05 N/25 mm and equal to or less than 1.5 N/25 mm.

Abstract: The present invention is an adhesive composition that is characterized by including (A) a polymer comprising a structural unit having a hydroxy group in a side chain, (B) a compound having two or more isocyanate groups, (C) a bismuth carboxylate, and (D) a tertiary amine having a pKa of 6 or more. The polymer (A) may include further a structural unit having a urethane bond and a polymerizable unsaturated bond in a side chain.

Abstract: A component-manufacturing tool includes a frame body and a holding film covering an opening, wherein the frame body includes a first frame and a second frame; the holding film includes a base layer and a holding layer provided on one surface of the base layer, and the holding film is sandwiched and held between the first frame and the second frame in a stretched state; and a ratio RE1 (=E?(100)/E?(25)) of an elastic modulus E?(100° C.) of the base layer to an elastic modulus E?(25° C.) of the base layer is 0.2?RE1?1, and E?(25) is 35 MPa or more and 3500 MPa or less. A component-manufacturing method includes a component holding step of holding components to the holding layer of the component-manufacturing tool; and a chucking step of chucking and fixing the holding film, to which holds the components, to a surface of a heated chuck table.

Abstract: The present invention is a method for producing a polyfunctional polymer that contains a structural unit having a urethane bond and a polymerizable unsaturated bond in a side chain, and is characterised by including a reaction process in which a polymer (P) containing a structural unit (a) having a hydroxy group in a side chain and a monomer (M) having an isocyanate group and a polymerizable unsaturated bond are reacted in the presence of a bismuth carboxylate.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes at least the following four steps: (A) a step of preparing a structure (100) including an adhesive laminate film (50) having a heat-resistant resin layer (10), a flexible resin layer (20) and an adhesive resin layer (30) in this order, and one or two or more semiconductor chips (70) adhered to the adhesive resin layer (30); (B) a step of confirming an operation of the semiconductor chips (70) in a state of being adhered to the adhesive resin layer (30); (C) a step of, after the step (B), peeling the heat-resistant resin layer (10) from the adhesive laminate film (50); and (D) a step of, after the step (C), picking up the semiconductor chips (70) from the adhesive resin layer (30).

Abstract: A method for manufacturing a semiconductor device of the present invention includes at least following four steps. (A) A step of preparing a structure having an adhesive film having a radiation-curable adhesive resin layer and one or two or more semiconductor chips adhered to the adhesive resin layer ; (B) a step of irradiating the adhesive film with a radiation to crosslink the adhesive resin layer; (C) a step of, after the step (B), confirming the operation of the semiconductor chips in a state of being adhered to the adhesive resin layer; and (D) a step of, after the step (C), picking up the semiconductor chips from the adhesive resin layer.

Abstract: An adhesive film used when sealing an electronic component to temporarily fix the electronic component, the adhesive film including a base material layer, an adhesive resin layer which is provided on a first surface side of the base material layer and which is for temporarily fixing the electronic component, and an adhesive resin layer which is provided on a second surface side of the base material layer and of which the adhesive strength decreases according to an external stimulus, in which the adhesive resin layer includes a polyvalent carboxylic acid ester-based plasticizer and an adhesive resin, and a content of the polyvalent carboxylic acid ester-based plasticizer in the adhesive resin layer is more than or equal to 0.7 parts by mass and less than or equal to 50 parts by mass with respect to 100 parts by mass of the adhesive resin included in the adhesive resin layer.

Abstract: A method for manufacturing a semiconductor device includes at least the following three steps. A step (A) of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer. A step (B) of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer. A step (C) of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. In addition, as the adhesive film, an adhesive film having a base material layer, an antistatic layer, and an adhesive resin layer including a conductive additive in this order is used, and the adhesive film is used so that the adhesive resin layer faces the circuit-formed surface side of the semiconductor wafer.

Abstract: Provided is a component-manufacturing film that includes a first region S1 and a second region S2 disposed so as to surround the region S1; the region S1 is formed of a base layer and an adhesive layer provided on one surface side of the base layer; the region S2 is formed of the base layer, the adhesive layer, and an additional layer affixed onto the layer. In the temperature range of 190° C. or lower, a tensile elastic modulus of the additional layer is equal to or greater than the tensile elastic modulus of the base layer. Further provided are a component-manufacturing tool and method, the latter including a component fixing step; a film placement step of performing placement so that the boundary between the region S1 and the region S2 is located inside with respect to an edge of the chuck table; a chucking step; and a heating step.

Abstract: Provided are an electronic-device-protecting film used when semiconductor parts obtained by segmentation are to be sealed in the form of an array using a sealant after the semiconductor parts are rearranged, wherein the curing temperature of the sealant does not need to be adjusted downward; an electronic-device-protecting member; a method for manufacturing an electronic device; and a method for manufacturing a package. The electronic-device-protecting film includes a base layer and an adhesive layer, and the method includes: bonding the adhesive layer to one surface of a frame having an opening, the adhesive layer being bonded so as to cover the opening; subsequently bonding a plurality of semiconductor parts to the surface of the adhesive layer that is exposed via the opening with the semiconductor parts set apart from each other; subsequently covering the semiconductor parts and the surface of the adhesive layer with a sealant; and heat-curing the sealant.

Abstract: A method for manufacturing electronic apparatus includes: a step (A) of preparing a structure provided with an adhesive film and one or two or more electronic components affixed to an adhesive surface of the adhesive film; a step (B) of disposing the structure in the electronic component testing apparatus such that the electronic component is positioned over an electronic component installation region of a sample stand of the electronic component testing apparatus in a defined manner; a step (C) of evaluating the properties of the electronic component in a state of being affixed to the adhesive film with the probe terminal being in contact with a terminal of the electronic component; and a step (D) of picking up the electronic component from the adhesive film after the step (C). A defined sample stand is also provided.

Abstract: A polypropylene-based foam sheet (100) of the present invention is a polypropylene-based foam sheet including a polypropylene-based resin; and an inorganic filler, in which the inorganic filler includes one or more selected from talc, mica, and silica, and a content of the inorganic filler in the polypropylene-based foam sheet is equal to or more than 15 parts by mass and equal to or less than 65 parts by mass when a total amount of the polypropylene-based resin and the inorganic filler is set to 100 parts by mass.

Abstract: A method for manufacturing electronic apparatus includes: a step (A) of preparing a structure provided with an adhesive film and at least one electronic component affixed to an adhesive surface of the adhesive film; a step (B) of disposing the structure in an electronic component testing apparatus such that the electronic component is positioned over an electronic component installation region of a sample stand with the adhesive film interposed between the electronic component and the electronic component installation region, the electronic component testing apparatus being provided with a probe card at a position facing the sample stand and includes a probe terminal; a step (C) of evaluating the properties of the electronic component while being affixed to the adhesive film with the probe terminal being in contact with a terminal of the electronic component; and a subsequent step (D) of picking up the electronic component from the adhesive film.

Abstract: A method for manufacturing a semiconductor device includes at least the following three steps. A step (A) of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer. A step (B) of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer. A step (C) of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. In addition, as the adhesive film, an adhesive film having a base material layer, an antistatic layer, and an adhesive resin layer including a conductive additive in this order is used, and the adhesive film is used so that the adhesive resin layer faces the circuit-formed surface side of the semiconductor wafer.

Abstract: A laminate film includes a substrate layer; and a metal oxide layer which is provided on one surface or both surfaces of the substrate layer and contains a metal oxide. Further, the oxygen permeability measured under defined conditions is 20 ml/m2·day·MPa or less and the water vapor permeability measured under conditions of a temperature of 40° C. and a humidity of 90% RH is 2.5 g/m2·day or greater. In addition, when the K? beam intensity of a metal constituting the metal oxide which is obtained by performing fluorescence X-ray analysis on the metal oxide layer is set to A and the K? beam intensity of the metal which is obtained by performing fluorescence X-ray analysis on a metal layer formed of the metal constituting the metal oxide is set to B, A/B is equal to or greater than 0.20 and equal to or less than 0.97.