Abstract: This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G?bmin of the storage elastic modulus G?b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G?b250 at 250° C. of 0.005 MPa or above, and a temperature at which G?bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G?cmin of the storage elastic modulus G?c in the range of 25° C. to less than 250° C. of 0.03 MPa.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes at least the following four steps: (A) a step of preparing a structure (100) including an adhesive laminate film (50) having a heat-resistant resin layer (10), a flexible resin layer (20) and an adhesive resin layer (30) in this order, and one or two or more semiconductor chips (70) adhered to the adhesive resin layer (30); (B) a step of confirming an operation of the semiconductor chips (70) in a state of being adhered to the adhesive resin layer (30); (C) a step of, after the step (B), peeling the heat-resistant resin layer (10) from the adhesive laminate film (50); and (D) a step of, after the step (C), picking up the semiconductor chips (70) from the adhesive resin layer (30).

Abstract: Provided are a film for manufacturing semiconductor component, a film for electronic component manufacture, a method for manufacturing a semiconductor component using such a film for manufacturing semiconductor component, and a method for manufacturing an electronic component using such a film for electronic component manufacture. The film for component manufacture includes a base layer and an adhesive layer provided on one surface side of the base layer, and the Ra (?m) of the surface of one side of the base layer on which the adhesive layer is not provided is 0.1 to 2.0, and the Rz (?m) is 1.0 to 15. The method using the film for component manufacture includes a segmenting step, a pickup step, and an evaluation step prior to the pickup step.

Abstract: A method for manufacturing a semiconductor device includes at least the following three steps: (A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer; (B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer; and (C) A step of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. The adhesive film includes a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side thereof. The adhesive resin layer includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V1 of a surface of the adhesive resin layer after ultraviolet curing, which is measured using a specific method, is equal to or less than 2.0 kV.

Abstract: A method for manufacturing a semiconductor device of the present invention includes at least following four steps. (A) A step of preparing a structure having an adhesive film having a radiation-curable adhesive resin layer and one or two or more semiconductor chips adhered to the adhesive resin layer ; (B) a step of irradiating the adhesive film with a radiation to crosslink the adhesive resin layer; (C) a step of, after the step (B), confirming the operation of the semiconductor chips in a state of being adhered to the adhesive resin layer; and (D) a step of, after the step (C), picking up the semiconductor chips from the adhesive resin layer.

Abstract: The present invention relates to a deformation sensor comprising a structure in which an ion-conductive polymer layer is sandwiched between soft electrodes, wherein non-uniform ion distribution is generated in the ion-conductive polymer layer by deformation, thereby generating a potential difference between the electrodes.

Abstract: A solar cell module includes a light-receiving surface-side protective member, a rear surface-side protective member, solar cell elements, and an encapsulating layer that encapsulates the solar cell elements between the light-receiving surface-side protective member and the rear surface-side protective member. The light-receiving surface-side protective member has a plurality of fine recess portions and a plurality of fine protrusion portions on at least a solar cell element side surface, busbar electrodes are provided to the solar cell elements on at least a light-receiving surface-side surface. The encapsulating layer has a light-receiving surface side-encapsulating layer having an effective thickness of 0.01 mm to less than 0.25 mm and a rear surface-side encapsulating layer, and the solar cell elements are encapsulated between the light-receiving surface side-encapsulating layer and the rear surface-side encapsulating layer.

Abstract: The present invention is a method for producing a polyfunctional polymer that contains a structural unit having a urethane bond and a polymerizable unsaturated bond in a side chain, and is characterised by including a reaction process in which a polymer (P) containing a structural unit (a) having a hydroxy group in a side chain and a monomer (M) having an isocyanate group and a polymerizable unsaturated bond are reacted in the presence of a bismuth carboxylate.

Abstract: A photo-crosslinkable ethylene-based resin composition of the present invention includes an ethylene-based copolymer having a Shore A hardness measured in accordance with ASTM D2240 of equal to or more than 55 and equal to or less than 95, a photo-crosslinking initiator, and a crosslinking aid, in which the content of the crosslinking aid is equal to or more than 0.1 parts by mass and less than 2.0 parts by mass with respect to 100 parts by mass of the ethylene-based copolymer.

Abstract: This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G?bmin of the storage elastic modulus G?b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G?b250 at 250° C. of 0.005 MPa or above, and a temperature at which G?bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G?cmin of the storage elastic modulus G?c in the range of 25° C. to less than 250° C. of 0.03 MPa.

Abstract: Provided are an electronic-device-protecting film used when semiconductor parts obtained by segmentation are to be sealed in the form of an array using a sealant after the semiconductor parts are rearranged, wherein the curing temperature of the sealant does not need to be adjusted downward; an electronic-device-protecting member; a method for manufacturing an electronic device; and a method for manufacturing a package. The electronic-device-protecting film includes a base layer and an adhesive layer, and the method includes: bonding the adhesive layer to one surface of a frame having an opening, the adhesive layer being bonded so as to cover the opening; subsequently bonding a plurality of semiconductor parts to the surface of the adhesive layer that is exposed via the opening with the semiconductor parts set apart from each other; subsequently covering the semiconductor parts and the surface of the adhesive layer with a sealant; and heat-curing the sealant.

Abstract: Provided is a film for manufacturing a semiconductor part in which an evaluation step accompanied with a temperature change, a segmenting step, and a pickup step can be commonly performed, a method for manufacturing a semiconductor part, a semiconductor part, and an evaluation method. The film includes a base layer, and an adhesive layer disposed on one surface side of the base layer, wherein the ratio RE (=E?(160)/E?(?40)) of the elastic modulus of the base layer at 160° C. to the elastic modulus of the base layer at ?40° C. is RE?0.01, and the elastic modulus E?(?40) is 10 MPa to less than 1000 MPa. The method includes bonding the adhesive layer to a back surface of a semiconductor wafer, separating the semiconductor wafer into segments to obtain semiconductor parts, and separating the semiconductor parts from the adhesive layer, and includes a step of evaluating.

Abstract: A gas barrier laminate which includes a base material layer, and a gas barrier polymer layer having a thickness of from 0.01 ?m to 0.45 ?m provided over at least one surface of the base material layer and formed by heating a mixture including a polycarboxylic acid and a polyamine compound.

Abstract: According to the present invention, there is provided a semiconductor wafer protective film including a substrate layer (A) and an adhesive layer (C) formed on the substrate layer (A), in which the substrate layer (A) includes polymer, and a solubility parameter of the polymer determined by a Van Krevelen method is equal to or greater than 9.

Abstract: A rear face side substrate for a thermal transfer image-receiving sheet has a first rear face side layer, a second rear face side layer, and a third rear face side layer layered in this order, wherein the first rear face side layer comprises a propylene-based polymer composition A containing at least a propylene-based polymer, the second rear face side layer comprises a propylene-based polymer composition B containing at least a propylene polymer, an antistatic agent and a masking agent, and the third rear face side layer comprises a propylene-based polymer composition (C) containing at least a propylene-based polymer, a three-dimensional center surface average roughness (SRa) of the third rear face side layer being in the range of 0.10 ?m to 1.50 ?m, and the first rear face side layer, the second rear face side layer and the third rear face side layer being biaxially oriented.

Abstract: An encapsulating material for solar cell of the invention contains an ethylene/?-olefin copolymer, and a content of a fluorine element in the ethylene/?-olefin copolymer, which is determined using a combustion method and an ion chromatograph method, is equal to or less than 30 ppm.

Abstract: A gas barrier polymer of the present invention is formed by heating a mixture including a polycarboxylic acid and a polyamine compound, in which, in an infrared absorption spectrum of the gas barrier polymer, when a total peak area in a range of an absorption band of equal to or more than 1493 cm?3 and equal to or less than 1780 cm?1 is A, and a total peak area in a range of an absorption band of equal to or more than 1598 cm?1 and equal to or less than 1690 cm?1 is B, an area ratio of an amide bond indicated by B/A is 0.370 or more.

Abstract: An adhesive film of the present invention includes a base material layer and a self-peeling adhesive layer laminated therein. The base material layer has a thermal contraction percentage in a direction of flow (thermal contraction percentage in an MD direction) and a thermal contraction percentage in an orthogonal direction with respect to the direction of flow (thermal contraction percentage in a TD direction) that satisfy the following conditions: (1) after heating at 150° C. for 30 minutes, 0.4?|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction|?2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction?2%, and (2) after heating at 200° C. for 10 minutes, 0.4?|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction|?2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction?3%.

Abstract: Disclosed is a solar cell module including an n-type crystalline silicon-based solar cell element as a power generation element, in which at least one surface of the n-type crystalline silicon-based solar cell element is encapsulated with a solar-cell encapsulating material including an ethylene•?-olefin copolymer satisfying the following requirements a1) to a4). a1) A content proportion of a structural unit derived from ethylene is in a range of 80 to 90 mol %, and a content proportion of a structural unit derived from an ?-olefin having 3 to 20 carbon atoms is in a range of 10 to 20 mol %. a2) MFR measured under defined conditions is in a range of 0.1 to 50 g/10 minutes. a3) A density, which is measured under defined conditions in a range of 0.865 to 0.884 g/cm3. a4) A Shore A hardness, which is measured under defined conditions is in a range of 60 to 85.

Abstract: A laminate film includes a substrate layer; and a metal oxide layer which is provided on one surface or both surfaces of the substrate layer and contains a metal oxide. Further, the oxygen permeability measured under defined conditions is 20 ml/m2·day·MPa or less and the water vapor permeability measured under conditions of a temperature of 40° C. and a humidity of 90% RH is 2.5 g/m2.day or greater. In addition, when the K? beam intensity of a metal constituting the metal oxide which is obtained by performing fluorescence X-ray analysis on the metal oxide layer is set to A and the K? beam intensity of the metal which is obtained by performing fluorescence X-ray analysis on a metal layer formed of the metal constituting the metal oxide is set to B, A/B is equal to or greater than 0.20 and equal to or less than 0.97.