Abstract: There is provided a manufacturing method of a laminated iron core which is formed of a strip-shaped iron core piece. The strip-shaped iron core piece includes segment iron core pieces connected through a joint positioned in a radial outside, and each of the segment iron core pieces has an artuate shape. The joint by which adjacent segment iron core pieces are connected is folded and lateral ends of the adjacent segment iron core pieces are aligned. The strip-shaped iron core piece is spirally wound while circumferentially shifting mutual joints formed on vertical adjacent layers. Crush processing is performed for flattening a bulged portion in a thickness direction of the segment iron core pieces formed at a time of folding the joint, and the crush processing is performed simultaneously with a time when or after mutual segment iron core pieces arranged vertically are crimped and laminated.

Abstract: A tin oxide particle having at least two diffraction peaks at 2? (deg) of 9±1° and 28±1° in XRD measurement by Cu/K? radiation. The tin oxide particle preferably shows diffraction peaks at 2? (deg) of 19±1°, 48±1°, and 59±1°. The tin oxide particle preferably has electroconductivity. The tin oxide particle is preferably produced by mixing an aqueous solution containing tin (II) and a hydroxyl-containing organic compound in a heated condition with an alkali.

Abstract: A nickel ink having nickel particles dispersed in a dispersion medium is disclosed. The dispersion medium comprises one member or a combination of two or more members selected from the group consisting of an alcohol and a glycol both having a boiling point of 300° C. or lower at atmospheric pressure. The nickel particles have an average primary particle size of 50 nm or smaller. The nickel ink provides a conductor film with a surface smoothness having an average surface roughness Ra of 10 nm or smaller and a maximum surface roughness Rmax of 200 nm or smaller.

Abstract: The cyclic olefin copolymer of the present invention contains (A) a repeating unit derived from one or more kinds of olefins represented by the following General Formula (I), (B) a repeating unit derived from a cyclic non-conjugated diene represented by the following General Formula (III), and (C) a repeating unit derived from one or more kinds of cyclic olefins represented by the following General Formula (V), wherein when a total mole number of the repeating units is regarded as 100 mol %, the (B) repeating unit derived from a cyclic non-conjugated diene is contained in an amount of 19 mol % to 36 mol %.

Abstract: A metal foil is provided with a filler-containing resin layer that is thin and has a smooth surface as a metal foil provided with an insulating layer. The filler-containing resin layer having a thickness of 0.1 ?m to 3.0 ?M, the gloss at the surface of the filler-containing resin layer is 200 or more, and the surface roughness (Ra) measured by an atomic force microscope in a measurement area of 5 ?m×5 ?M on the filler-containing resin layer is 25 nm or less is stacked on the smooth surface of the metal foil having a gloss exceeding 400 and surface roughness (Ra) measured by an atomic force microscope in a measurement area of 5 ?m×5 ?m of 10 nm or less.

Abstract: A device for controlling a door operated by a motor includes an opening/closing mechanism that opens and closes the door, and a gear mechanism that includes a plurality of tooth units each of which has different mesh and that conveys a torque of the motor to the opening/closing mechanism. The tooth units include a low-torque tooth unit that convey a relatively low torque, and a high-torque-tooth unit that conveys a relatively high torque. The torque conveyed to the opening/closing mechanism is changed by selecting a tooth unit based on a position of the door at the time of starting an opening or closing operation of the door.

Abstract: An object of the present invention is to provide an electro-deposited copper-alloy foil excellent in infrared laser processability which enables uniform etching rate along a thickness direction in following etching process. To achieve the object, an electro-deposited copper-alloy foil obtained from electrolyzing of an electrolytic solution, wherein the electro-deposited copper-alloy foil has tin content of 8% by mass to 25% by mass is employed. In the electro-deposited copper-alloy foil, a grain in a crystal structure is preferably a columnar grain longitudinal along a thickness direction.

Abstract: The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25° C. of 6 or lower.

Abstract: A non-aqueous electrolyte solution containing a cyclic sulfate compound represented by formula (I) is provided, wherein in formula (I), R1 represents a group represented by formula (II) or a group represented by formula (III); R2 represents a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, a group represented by formula (II), or a group represented by formula (III); and in formula (II), R3 represents a halogen atom, an alkyl group having from 1 to 6 carbon atoms, a halogenated alkyl group having from 1 to 6 carbon atoms, an alkoxy group having from 1 to 6 carbon atoms, or a group represented by formula (IV).

Abstract: Disclosed is an encapsulating material for solar cell containing an ethylene/?-olefin copolymer satisfying the following requirements (a1) to (a4): (a1) the content ratio of structural units derived from ethylene is from 80 to 90 mol % and the content ratio of structural units derived from ?-olefin having 3 to 20 carbon atoms is from 10 to 20 mol %; (a2) MFR is from 10 to 50 g/10 minutes as measured under the conditions of a temperature of 190 degrees centigrade and a load of 2.16 kg in accordance with ASTM D1238; (a3) the density is from 0.865 to 0.884 g/cm3 as measured in accordance with ASTM D1505; and (a4) the shore A hardness is from 60 to 85 as measured in accordance with ASTM D2240.

Abstract: To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25° C., E(25), of 1 GPa or more; a resin layer A that satisfies the condition EA(60)/EA(25)<0.1, where EA(25) is a tensile elasticity at 25° C. and EA(60) is a tensile elasticity at 60° C., the EA(60) ranging from 0.005 MPa to 1 MPa; and a resin layer B having a tensile elasticity at 60° C., EB(60), of 1 MPa or more and having a thickness of 0.1 ?m to less than 100 ?m, the EB(60) being larger than the EA(60) of the resin layer A.

Abstract: A tetrafluoroethylene copolymer composition for injection molding having excellent resistance to chemical permeation and durability, comprised of polytetrafluoroethylene and copolymer of tetrafluoroethylene and perfluoro(alkyl vinyl ether). The composition has a melt flow rate of 12 g/10 min or greater, a flex life of 20,000 cycles or greater, and a nitrogen gas permeability of 0.8×10?10 cm3 (STP).cm/cm2.sec.cm Hg or less.

Abstract: It is an object of the present invention to provide a propylene-based polymer composition which is excellent in transparency and heat resistance (particularly, heat resistance at high heat deformation temperature) and is free from occurrence of stickiness even when it is used at a high temperature for a long period of time. The propylene-based polymer composition of the invention comprises (A) a propylene-based polymer (PP) satisfying the following requirements (1) and (2), in an amount of 1 to 99 parts by weight, and (B) a propylene/ethylene/?-olefin copolymer satisfying the following requirements (I) to (IV), in an amount of 99 to 1 part by weight, with the proviso that the total amount of the component (A) and the component (B) is 100 parts by weight; (1) the polymer (A) has a melting point (Tm), as measured by a differential scanning calorimeter (DSC), of not lower than 110° C. but not higher than 170° C.

Abstract: A hydrogen storage alloy is provided which has an extremely low Co content, and can maintain the drain (power) performance (especially pulse discharge characteristics), activity (degree of activity), and life performance at high levels. The hydrogen storage alloy is manufactured by weighing and mixing every material for the hydrogen storage alloy so as to provide an alloy composition represented by the general formula MmNiaMnbAlcCod or MmNiaMnbAlcCodFee, and controlling the manufacturing method and manufacturing conditions so that both the a-axis length and the c-axis length of the crystal lattice are in a predetermined range. Although it is sufficient if the a-axis length of the crystal lattice is 499 pm or more and the c-axis length is 405 pm or more, by further specifying the a-axis length and c-axis length depending on the values of ABx, a hydrogen storage alloy having high durability can be provided.

Abstract: Provided is a plasma-resistant member which can be recycled and does not easily produce particles even when exposed to plasma. Specifically provided is a plasma-resistant member which has a predetermined surface profile and is used within a plasma etching chamber. The plasma-resistant member comprises: a first SiC layer (12) that is formed by a CVD method and has a corroded surface by having been exposed to plasma etching; and a second SiC layer (13) that is laminated on the corroded surface of the first SiC layer (12) by a CVD method and has a surface that is machined so as to have the predetermined surface profile.

Abstract: The plastic polarized lens (10) of the present invention contains a polarized film (12) and layers (resin layers) (14a and 14b) comprising a thiourethane-based resin stacked over both surfaces of the polarized film (12), and the polarized film contains an organic coloring compound represented by the following general formula (1).

Abstract: To provide a resin composition for sealing an optical semiconductor, which is a raw material for a sealing resin layer having good curability and excellent storage stability; preferably a raw material for a sealing resin layer further having excellent weather resistance. The surface sealant for an optical semiconductor of Embodiment 1 according to the present invention contains epoxy resin (a) having two or more epoxy groups in a molecule, and metal complex (b1) which contains at least one metal ion selected from the group consisting of Zn, Bi, Ca, Al, Cd, La and Zr, a tertiary amine capable of forming a complex with the metal ion and having no N—H bond and an anionic ligand having a molecular weight of 17 to 200, in which the surface sealant has a viscosity of 10 to 10000 mPa·s, as measured by E-type viscometer at 25° C. and 1.0 rpm.

Abstract: A laminated core 10 improves material yield and prevents cracks or breakages of core pieces by relaxing stress on connecting portions 13. A connected core segment 14 to be the laminated core 10 includes: a V-shaped cutout 17 located radially inward from the connecting portion 13, the cutout 17 opening in a radially inward direction with an opening angle of 360°/n given that n is a number of core segments 19; a slit 18 located radially outward from the connecting portion 13, the slit 18 dividing adjacent segment yokes 12 located radially outward from the connecting portion; a first through-hole 20 having a circular arc formed in a radially outward end of the cutout 17 in contact with the connecting portion 13; and a second through-hole 21 having a circular arc formed in a radially inward end of the slit 18 in contact with the connecting portion 13.

Abstract: A gasification apparatus is provided which enables gas hydrate pellets to be transported and gasified in the same vessel and enables a gas to be generated by pellet decomposition in a controlled amount. The apparatus is free from bridging. The apparatus includes a heat-in-saluted vessel main body and, disposed therein, a tubular structure which is open at the top and bottom. This tubular structure holds therein gas hydrate pellets obtained by compression-molding a gas hydrate produced by the hydration reaction of a raw-material gas with raw-material water. The tubular structure becomes wider in diameter from the upper opening toward the lower opening. A channel for passing a heat carrier therethrough has been disposed between the lower end of the tubular structure and the inner bottom surface of the vessel main body.

Abstract: A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.