Abstract: A method and system in which an embedded memory is fabricated in accordance with a conventional logic process includes one or more non-volatile memory cells, each having an access transistor and a capacitor, which share a common floating gate electrode. The coupling capacitor is provided with a dielectric layer having a thickness greater than the dielectric layer of the access transistor. Regions under the capacitor are implanted with a high dose implant to form an electrically shorted doped area in the channel region of the capacitor. The high dose implant improves the coupling ratio of the capacitor and enhances the uniformity of the capacitor's oxide layer.

Abstract: A voltage-mode differential driver may include a first nominal path that selectively couples a first supply or a second supply to a first output terminal in response to an input data. The voltage-mode differential driver may further include a first capacitive boost path that selectively couples the first supply or the second supply to the first output terminal responsive to the input data. The first capacitive boost path may be selectively enabled to provide a boost current to be added to a current from the first nominal path resulting in an output current to be provided to the first output terminal.

Abstract: A resource synchronizer synchronizes transmission of data to a SerDes of a device so that the SerDes is capable of providing the data to a resource of the device without buffering the data between the SerDes and the resource.

Abstract: An embedded memory system includes an array of dynamic random access memory (DRAM) cells, on the same substrate as an array of logic transistors. Each DRAM cell includes an access transistor and a capacitor structure. The capacitor structure is fabricated by forming a metal-insulator-metal capacitor in a dielectric layer.

Abstract: An embedded memory system includes an array of random access memory (RAM) cells, on the same substrate as an array of logic transistors. Each RAM cell includes an access transistor and a capacitor structure. The capacitor structure is fabricated by forming a metal-insulator-metal capacitor in a dielectric layer.

Abstract: A chip layout for a high speed semiconductor device is disclosed. The chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. A serial interface is centrally located to reduce latency, power and propagation delays. Stacked die that contain one or more devices with the chip layout are characterized by having improved latency, bandwidth, power consumption, and propagation delays.

Abstract: A memory circuit for holding a single binary value. A first bit cell holds one of a logical high value and a logical low value, and a second bit cell also holds one of a logical high value and a logical low value. Circuitry is provided for placing a logical high value in the first bit cell when the binary value in the memory circuit is to be a logical high value, and circuitry is provided for placing a logical high value in the second bit cell when the binary value in the memory circuit is to be a logical low value. In this manner, a logical high value exists within the memory circuit, whether the single binary value within the memory circuit is a logical high value or a logical low value. The difference between the two values of the binary value is which of the two bit cells holds the logical high value. Thus, this memory circuit can be sensed without the use of a sense amplifier.

Abstract: The subject innovation relates to systems and/or methodologies for generating a low jitter large frequency tuning LC-based phase-locked loop circuit for multi-speed clocking applications. In addition to a plurality of noise reduction features, the phase-locked loop includes programmable charge pump and loop filter that enable a wide loop bandwidth, a programmable VCO that enables a wide VCO frequency range and a per lane clock divider that further enables a wide PLL frequency range. Furthermore, an auto-calibration circuit ensures that the VCO included in the PLL receives the optimum current for noise reduction across the VCO frequency range.

Abstract: A method and structure for characterizing signals used to operate high speed circuitry on an integrated circuit chip. Signals to be characterized, such as column select signals, sense amplifier enable signals and word line signals, are generated on the chip. Each of these signals has an identical corresponding pattern during successive cycles of an input clock signal. These signals are sampled on the chip with successively delayed versions of the input clock signal, thereby generating a plurality of data samples that represent the patterns of the signals over a cycle of the input clock signal. The data samples are stored in a memory block on the chip, and are subsequently serialized and transferred to a location external to the chip.

Abstract: A non-volatile memory cell having enhanced protection against mobile ions. The electric field within the memory cell is controlled in a manner that minimizes migration of mobile ions toward the floating gate. Each conductive layer in the memory cell is biased to reduce the flow of mobile ions toward the floating gate. The memory cell is preferably manufactured using a conventional logic process.

Abstract: A programmable characterization-debug-test engine (PCDTE) on an integrated circuit chip. The PCDTE includes an instruction memory that receives and stores instructions provided on a chip interface, and a configuration memory that receives and stores configuration values provided on the chip interface. The PCDTE also includes a controller that configures a plurality of address counters and data registers in response to the configuration values. The controller also executes the instructions, wherein read/write addresses and write data are retrieved from the counters in response to the instructions. The retrieved read/write addresses and write data are used to access a memory under test. Multiple ports of the memory under test may be simultaneously accessed. Multiple instructions may be linked. The instructions may specify special counting functions within the counters and/or specify integrated (linked) counters.

Abstract: A memory device that includes an input interface that receives instructions and input data on a first plurality of serial links. The instructions and input data are deserialized on the memory device, and are provided to a memory controller. The memory controller initiates accesses to a memory core in response to the received instructions. The memory core includes a plurality of memory partitions, which are accessed in a cyclic and overlapping manner. This allows each memory partition to operate at a slower frequency than the serial links, while properly servicing the received instructions. Accesses to the memory device are performed in a synchronous manner, wherein each access exhibits a known fixed latency.

Abstract: A memory system includes multiple (N) memory banks and multiple (M) ports, wherein N is greater than or equal to M. Each of the memory banks is coupled to each of the ports. Access requests are transmitted simultaneously on each of the ports. However, each of the simultaneous access requests specifies a different memory bank. Each memory bank monitors the access requests on the ports, and determines whether any of the access requests specify the memory bank. Upon determining that an access request specifies the memory bank, the memory bank performs an access to an array of single-port memory cells. Simultaneous accesses are performed in multiple memory banks, providing a bandwidth equal to the bandwidth of one memory bank times the number of ports. An additional level of hierarchy may be provided, which allows further multiplication of the number of simultaneously accessed ports, with minimal area overhead.

Abstract: A system for increasing the efficiency of data transfer through a serializer-deserializer (SerDes) link, and for reducing data latency caused by differences between arrival times of the data on the SerDes link and the system clock with which the device operates.

Abstract: A multi-bank memory system includes one or more levels of logical memory hierarchy to increase the available random cyclic transaction rate of the memory system. The memory system includes a plurality of multi-bank partitions, each having a corresponding partition interface. Each partition interface accesses the corresponding multi-bank partition at a first frequency. A global interface may access the partition interfaces at a second frequency, which is equal to the first frequency times the number of partition interfaces. Alternately, a plurality of cluster interfaces may access corresponding groups of the partition interfaces, wherein each cluster interface accesses the corresponding group of partition interfaces at a second frequency that is faster than the first frequency. A global interface accesses the cluster interfaces at a third frequency that is greater than the second frequency.

Abstract: A memory bank includes an array of memory cells, word lines for accessing the memory cells, and word line drivers coupled to the word lines. When the memory bank is being accessed, the word line drivers are coupled to receive a first supply voltage, which is applied to the non-selected word lines of the memory bank. The first supply voltage turns off access transistors of the memory cells coupled to the non-selected word lines. When the memory bank is not being accessed, the word line drivers are coupled to receive a second supply voltage, which is applied to each of the word lines of the memory bank. The second supply voltage turns off the access transistors of the memory cells coupled of the word lines. The first and second supply voltages are selected such that the first supply voltage turns off the access transistors harder than the second supply voltage.

Abstract: A method and apparatus for selectively restoring data in a non-volatile memory array based on failure type. Weakened data and erroneous data are identified by performing two readings of a specific memory section. Alternatively, an error correction code is used after a first reading of data to identify erroneous data. The manner in which data is restored will depend on whether the data changed because of an erase failure or a program failure. If only a program failure occurred then the data will be reprogrammed without an intervening erase step. If the data experienced an erase failure, then the data will be erased prior to being programmed with correct data.

Abstract: A reference current generation circuit generates a first branch current that varies by a first percentage in response to variations in a first supply voltage and variations in transistor threshold voltage. The first branch current is mirrored to create a corresponding second branch current. A first portion (sub-current) of the second branch current is supplied through a first transistor, which exhibits the transistor threshold voltage wherein the first sub-current varies by a second percentage in response to the variations in the first supply voltage and variations in transistor threshold voltage, wherein the second percentage is greater than the first percentage. A second portion (sub-current) of the second branch current is supplied through a second transistor. The second portion of the second branch current is mirrored to create a reference current (IREF).

Abstract: An embedded memory system that includes DRAM cells and logic transistors. The capacitor of the embedded memory responds to a positive bias voltage of ½ Vdd. The wordline driver of a p-channel access transistor applying the positive power supply voltage when the p-channel access FET is not being accessed and a voltage lower than the threshold voltage of the p-channel access FET is being accessed. For DRAM cells containing an n-channel access FET, the wordline driver applies either a negative voltage or the ground voltage to the n-channel access FET when the DRAM cell is not being accessed. A second voltage composed of Vdd and a boosted voltage is applied to the n-channel FET when the DRAM cell is being accessed.

Abstract: A memory system that reduces the memory cycle time of a memory cell by performing an incomplete write operation. The voltage on a storage node of the memory cell does not reach a full supply voltage during the incomplete write operation. The incomplete write operation is subsequently completed by one or more additional accesses, wherein the voltage on the storage node is pulled to a full supply voltage. The incomplete write operation may be completed by: subsequently writing the same data to the memory cell during an idle cycle; subsequently writing data to other memory cells in the same row as the memory cell; subsequently reading data from the row that includes the memory cell; or refreshing the row that includes the memory cell during an idle cycle. One or more idle cycles may be forced to cause the incomplete write operation to be completed in a timely manner.