Abstract: A homogeneous integrated infrared photonic chip and a method for manufacturing the same are provided. The homogeneous integrated infrared photonic chip includes a substrate layer, and a device structure and a waveguide structure that are both positioned on a surface of the substrate layer; wherein the device structure includes a lower contact layer, a quantum well layer, and an upper contact layer that are sequentially stacked along a direction perpendicular to the substrate layer, and the substrate layer, the lower contact layer, the quantum well layer, and the upper contact layer are made of a III-V material; and wherein the waveguide structure includes a waveguide layer made of the III-V material, the waveguide layer and the lower contact layer being arranged in the same layer.
Type:
Application
Filed:
June 28, 2021
Publication date:
October 21, 2021
Applicant:
NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
Abstract: Disclosed in the invention is an emergency message transmission method based on D2D communication in IoV. Firstly, priority indexes are established for a set of vehicles within a safety range of a certain vehicle, and D2D connection pairs are established in ascending order of the priority indexes to transmit messages; and then, distance prediction is performed on the set of vehicles outside the safety range, priority indexes are established according to predicted distances, and D2D connection pairs are established in ascending order of the priority indexes to transmit messages. If same priority indexes appear, vehicles on the same lane are selected first. The invention implements timely transmission of safety warning information on basis of D2D communication, and performs safety warning, thereby solving the technical problem of inability to transmit safety information in time, and improving transmission performance of traffic messages. Therefore, the invention has high reliability and real-time properties.
Type:
Grant
Filed:
June 20, 2019
Date of Patent:
September 14, 2021
Assignee:
NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
Abstract: Disclosed are an organic nano-grid, a nano-polymer thereof and a preparation method therefor. The organic nano-grid has a general formula (I), and the nano-polymer has a general formula (II), wherein R1 is an alkyl chain, R2 is halogen or an electroactive group, and X may comprise a heteroatom such as N, O and S, and n is a natural number from 1 to 10. A nano-connection strategy is applied to the construction of a one-dimensional nano-polymer. The polymer starts from a monomer A2B2 to form a corresponding nano-polymer by a Friedel-Crafts polymerization cyclization reaction.
Type:
Application
Filed:
January 26, 2018
Publication date:
June 3, 2021
Applicant:
NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
Abstract: By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an epitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.
Type:
Grant
Filed:
May 7, 2018
Date of Patent:
August 20, 2019
Assignee:
NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
Abstract: An integrated device and a fabrication method thereof are provided. In the device, by using various anisotropic silicon etching techniques, the silicon substrate layer and the expitaxial buffer layer under the device structure are removed, an ultra-thin device monolithically integrated with a suspended LED, an optical waveguide and a photodetector is obtained by further using the nitride back thinning etching technique. In the device, the light source, the optical waveguide and the photodetector are integrated on the same chip. The light emitted by the LED is laterally coupled to the optical waveguide, transmitted over the optical waveguide, and detected by the photodetector at the other end of the optical waveguide, thereby achieving a planar photon monolithically integrated device which is applied in the fields of optical transmission and optical sensing.
Type:
Application
Filed:
May 21, 2018
Publication date:
September 27, 2018
Applicant:
NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS
Abstract: By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an expitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.
Type:
Application
Filed:
May 7, 2018
Publication date:
September 20, 2018
Applicant:
NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS