Abstract: A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

Abstract: A method and apparatus identifies defects in a sample using photoluminescence with a silicon filter to filter out the primary excitation light from the return light received by the detector. The silicon filter passes the light emitted by the sample in response to the excitation light, while absorbing the lower wavelength excitation light that is reflected by or transmitted through the sample. The silicon filter has introduced impurities that reduce the recombination lifetime which reduces or eliminate photoluminescence in the silicon filter in response to the excitation light, thereby improving the signal to noise ratio of the signal received by the detector.

Abstract: The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen having a thickness no greater than the target depth and a surface of the specimen is illuminated with the light. An AC voltage signal induced in the specimen by the light is measured and this AC voltage may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.

Abstract: The properties of a surface of an object in presence of thin transparent films are determined by generating a library of model signals and processing a measurement signal via searching the library to evaluate films properties and topography. The library may be reduced with principal component analysis to enhance computation speed. Computation enhancement may also be achieved by removal of the height contributions from the signal leaving only the film contribution in the signal. The film measurement signal is compared to a library of film signals to determine the film parameters of the sample. The library of film signals is produced by processing each full signal in a library to similarly remove the height contributions leaving only the film contributions. Additionally, a post-analysis process may be applied to properly evaluate local topography.

Abstract: An ellipsometer includes an integrated focusing system with a beam splitter between the sample and the ellipsometer detector. The beam splitter provides a portion of the radiation to a lens system that magnifies any deviation from a best focus position by at least 2×. The focusing system includes a 2D sensor, where the spot of light focused on the sensor is 50 percent or smaller than the sensor. The focusing system may further include a compensator to correct optical aberrations caused by the beam splitter. A processor receives an image signal and finds the location of the spot from which focus error can be determined and used to correct the focal position of the ellipsometer. The processor compensates for movement of the spot caused by rotating optics. Additionally, a proportional-integral-derivative controller may be used to control exposure time and/or gain of the camera.

Abstract: Spectra for diffraction based overlay (DBO) in orthogonal directions, i.e., along the X-axis and Y-axis, are acquired in parallel. A broadband light source produces unpolarized broadband light that is simultaneously incident on X-axis and Y-axis DBO targets. A polarization separator, such as a Wollaston prism or planar birefringent element, receives diffracted light from the X-axis and Y-axis DBO targets and separates the TE and TM polarization states of the diffracted light. A detector simultaneously detects the TE and TM polarization states of the diffracted light for both the X-axis DBO target and the Y-axis DBO target as a function of wavelength.

Abstract: An optical metrology system collects data while scanning over the focal range. The data is evaluated to determine a peak intensity value from the data. In one embodiment, only data from one side of the peak value is used. The characteristic of the sample is determined based on the peak value. In one embodiment, monochromatic light is used. In another embodiment, polychromatic light is used and peak intensity values for a plurality of wavelengths are determine and combined to form a measured spectrum for the sample, which can then be used to determine the sample properties of interest. In one embodiment, the peak intensity is determined using curve fitting.

Abstract: An optical metrology system collects spectral data while scanning over the focal range. The spectral data is evaluated to determine a plurality of peak intensity values for wavelengths in the spectra. The peak intensities are then combined to form the measured spectrum for the sample, which can then be used to determine the sample properties of interest. In one embodiment, the peak intensity is determined based on the measured maximum intensity and a number n of intensity values around the measured maximum intensity, e.g., using curve fitting. If desired, the number n may be varied as a function of wavelength to vary the effective spot size of the metrology system while optimizing noise performance. The peak intensity may also be derived as the measured maximum intensity or through a statistical analysis.

Abstract: A sample with at least a first structure and a second structure is measured and a first model and a second model of the sample are generated. The first model models the first structure as an independent variable and models the second structure. The second model of the sample models the second structure as an independent variable. The measurement, the first model and the second model together to determine at least one desired parameter of the sample. For example, the first structure may be on a first layer and the second structure may be on a second layer that is under the first layer, and the processing of the sample may at least partially remove the first layer, wherein the second model models the first layer as having a thickness of zero.

Abstract: The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen having a thickness no greater than the target depth and a surface of the specimen is illuminated with the light. An AC voltage signal induced in the specimen by the light is measured and this AC voltage may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.

Abstract: An optical metrology device produces a broadband beam of light that is incident on and reflected by a sample and introduces multiple variations in the polarization state of the beam of light induced by an optical chiral element. Using the detected light, the Muller matrix or partial Mueller matrix for the sample is determined, which is then used to determine a characteristic of the sample. For example, simulated spectra for a Mueller matrix for a model is fit to the measured spectra for the Mueller matrix of the sample by adjusting the parameters of the model until an acceptable fit between the simulated spectra and measured spectra from the Mueller matrices is produced. The varied parameters are then used as the sample parameters of interested, which can be reported, such as by storing in memory or displaying.

Abstract: The process of modeling a complex two-dimensional periodic structure is improved by selectively truncating the Fourier expansion used in the calculation of resulting scatter signature from the model. The Fourier expansion is selectively truncated by determining the contribution for each harmonic order in the Fourier transform of the permittivity function and retaining the harmonic orders with a contribution that is above a threshold. The Fourier space may be compressed so that only the selected harmonic orders are used, thereby reducing the required memory and calculation times. The compressed Fourier space may be used in a real-time analysis of a sample or to generate a library that is used in the analysis of a sample.

Abstract: A model of a sample with a periodic or non-periodic pattern of conductive and transparent materials is produced based on the effect that the pattern has on TE polarized incident light. The model of the pattern may include a uniform film of the transparent material and an underlying uniform film of the conductive material. When the pattern has periodicity in two directions, the model may include a uniform film of the transparent material and an underlying portion that based on the physical characteristics of the periodic pattern in the TM polarization direction. When the sample includes an underlying periodic pattern that is orthogonal to the top periodic pattern, the sample may be modeled by modeling the physical characteristics of the top periodic pattern and the effect of the bottom periodic pattern. The model may be stored and used to determine a characteristic of the sample.

Abstract: A structure that is located adjacent to a measurement target on a substrate is used to convert incident radiation from an optical metrology device to be in-plane with the measurement target. The structure may be, e.g., a grating or photonic crystal, and may include a waveguide between the structure and the measurement target. The in-plane light interacts with the measurement target and is reflected back to the structure, which converts the in-plane light to out-of-plane light that is received by the optical metrology device. The optical metrology device then uses the information from the received light to determine one or more desired parameters of the measurement target. Additional structures may be used to receive light that is transmitted through or scattered by the measurement target if desired.

Abstract: A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

Abstract: A structure that is located adjacent to a measurement target on a substrate is used to convert incident radiation from an optical metrology device to be in-plane with the measurement target. The structure may be, e.g., a grating or photonic crystal, and may include a waveguide between the structure and the measurement target. The in-plane light interacts with the measurement target and is reflected back to the structure, which converts the in-plane light to out-of-plane light that is received by the optical metrology device. The optical metrology device then uses the information from the received light to determine one or more desired parameters of the measurement target. Additional structures may be used to receive light that is transmitted through or scattered by the measurement target if desired.

Abstract: A sample that is processed to remove a top layer, e.g., using chemical mechanical polishing or etching, is accurately measured using multiple models of the sample. The multiple models may be constrained based on a pre-processing measurement of the sample. By way of example, the multiple models of the sample may be linked in pairs, where one pair includes a model simulating the pre-processed sample and another model simulating the post-processed sample with a portion of the top layer remaining, i.e., under-processing. Another pair of linked models includes a model simulating the pre-processed sample and a model simulating the post-processing sample with the top layer removed, i.e., the correct amount of processing or over-processing. The underlying layers in the linked model pairs are constrained to have the same parameters. The modeling process may use a non-linear regression or libraries.

Abstract: An optical metrology device determines the local stress in a film on a substrate. The metrology device maps the thickness of the substrate prior to processing. After processing, the metrology device determines the surface curvature of the substrate caused by the processing and maps the thickness of a film on the top surface after of the substrate after processing. The surface curvature of the substrate may be determined as basis functions. The local stress in the film is then determined using the mapped thickness of the substrate, the determined surface curvature, and the mapped thickness of the film. The local stress may be determined using Stoney's equation that is corrected for non-uniform substrate curvature, non-uniform film thickness, and non-uniform substrate thickness.

Abstract: A method for processing wafers includes learning a first pattern at a de-skew site on a first wafer layer, saving the first patterns in a recipe for de-skewing wafers, learning a second pattern at the de-skew site a second wafer layer, and saving the second pattern in the same recipe for de-skewing wafers. Learning the first pattern may include determining a score of uniqueness for the first pattern. The method further includes finding the de-skew site on the second wafer layer using the first pattern before learning the second pattern. Finding the de-skew site includes determining a score of similarity between the first pattern and the second pattern. Learning the second pattern is performed when the score of similarity is less than a threshold value. A recipe for de-skewing wafers includes multiple patterns of a de-skew site of a wafer, wherein the patterns include a first pattern at the de-skew site on a first wafer layer and a second pattern at the de-skew site on a second wafer layer.

Abstract: An empirical diffraction based overlay (eDBO) measurement of an overlay error is produced using diffraction signals from a plurality of diffraction based alignment pads from an alignment target. The linearity of the overlay error is tested using the same diffraction signals or a different set of diffraction signals from diffraction based alignment pads. Wavelengths that do not have a linear response to overlay error may be excluded from the measurement error.