Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
Type:
Grant
Filed:
September 30, 2003
Date of Patent:
June 27, 2006
Assignee:
Nanosys, Inc.
Inventors:
Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda T. Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J. Wallace Parce, Jay L. Goldman
Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
Type:
Grant
Filed:
December 3, 2004
Date of Patent:
June 20, 2006
Assignee:
Nanosys, Inc.
Inventors:
Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda T. Romano, Jian Chen, Vijendra Sahi, Lawrence A. Bock, David P. Stumbo, J. Wallace Parce, Jay L. Goldman
Abstract: This invention provides novel capacitors comprising nanofiber enhanced surface area substrates and structures comprising such capacitors, as well as methods and uses for such capacitors.
Abstract: This invention provides novel nanofibers and nanofiber structures which posses adherent properties, as well as the use of such nanofibers and nanofiber comprising structures in the coupling and/or joining together of articles or materials.
Abstract: This invention provides novel capacitors comprising nanofiber enhanced surface area substrates and structures comprising such capacitors, as well as methods and uses for such capacitors.
Abstract: This invention provides novel nanofibers and nanofiber structures which posses adherent properties, as well as the use of such nanofibers and nanofiber comprising structures in the coupling and/or joining together of articles or materials.
Abstract: Devices, compositions and methods for producing photoactive devices, systems and compositions that have improved conversion efficiencies relative to previously described devices, systems and compositions. This improved efficiency is generally obtained by one or both of improving the efficiency of light absorption into the photoactive component, and improving the efficiency of energy extraction from that active component.
Type:
Application
Filed:
November 10, 2005
Publication date:
June 1, 2006
Applicant:
Nanosys, Inc.
Inventors:
J. Parce, Calvin Chow, Andreas Meisel, Linh Nguyen, Erik Scher, Jeffery Whiteford
Abstract: Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.
Type:
Grant
Filed:
September 30, 2003
Date of Patent:
May 30, 2006
Assignee:
Nanosys, Inc
Inventors:
Stephen Empedocles, David P. Stumbo, Chunming Niu, Xianfeng Duan
Abstract: Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate.
Type:
Application
Filed:
September 22, 2005
Publication date:
April 20, 2006
Applicant:
Nanosys, Inc.
Inventors:
Shahriar Mostarshed, Jian Chen, Francisco Leon, Yaoling Pan, Linda Romano
Abstract: The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.
Type:
Application
Filed:
January 13, 2005
Publication date:
March 30, 2006
Applicant:
NANOSYS, Inc.
Inventors:
J. Parce, Jian Chen, Robert Dubrow, William Freeman, Erik Scher, Jeffery Whiteford
Abstract: Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
Type:
Application
Filed:
June 7, 2005
Publication date:
February 23, 2006
Applicant:
NANOSYS, Inc.
Inventors:
Jeffery Whiteford, Rhett Brewer, Mihai Buretea, Jian Chen, Karen Cruden, Xiangfeng Duan, William Freeman, David Heald, Francisco Leon, Chao Liu, Andreas Meisel, Kyu Min, J. Parce, Erik Scher
Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
Type:
Application
Filed:
April 29, 2005
Publication date:
January 26, 2006
Applicant:
Nanosys, Inc.
Inventors:
Yaoling Pan, Xiangfeng Duan, Robert Dubrow, Jay Goldman, Shahriar Mostarshed, Chunming Niu, Linda Romano, Dave Stumbo
Abstract: The present invention is directed to methods to produce, process, and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides a method for producing nanowires that includes providing a thin film of a catalyst material with varying thickness on a substrate, heating the substrate and thin film, such that the thin film disassociates at the relatively thinner regions and vapor depositing a semiconductor onto the substrate to produce nanowires. A method is also provided in which two or more thin films of different materials are overlayed over a substrate, selectively etching the first underlying thin film to create a plurality of islands of the second thin film that mask portions of the first thin film and expose other portions and growing nanowires on the first thin film. Additional methods for producing nanowires are provided.
Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
Type:
Application
Filed:
April 29, 2005
Publication date:
January 12, 2006
Applicant:
Nanosys, Inc.
Inventors:
Linda Romano, Jian Chen, Xiangfeng Duan, Robert Dubrow, Stephen Empedocles, Jay Goldman, James Hamilton, David Heald, Francesco Lemmi, Chunming Niu, Yaoling Pan, George Pontis, Vijendra Sahi, Erik Scher, David Stumbo, Jeffery Whiteford
Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
Type:
Application
Filed:
June 7, 2005
Publication date:
December 29, 2005
Applicant:
NANOSYS, Inc.
Inventors:
David Heald, Karen Cruden, Xiangfeng Duan, Chao Liu, J. Parce
Abstract: Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.
Type:
Grant
Filed:
April 1, 2003
Date of Patent:
November 8, 2005
Assignee:
Nanosys, Inc.
Inventors:
Stephen Empedocles, Larry Bock, Calvin Chow, Xianfeng Duan, Chungming Niu, George Pontis, Vijendra Sahi, Linda T. Romano, David Stumbo
Abstract: Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.
Type:
Application
Filed:
May 31, 2005
Publication date:
October 20, 2005
Applicant:
NANOSYS, Inc.
Inventors:
Stephen Empedocles, Larry Bock, Calvin Chow, Xianfeng Duan, Chunming Niu, George Pontis, Vijendra Sahi, Linda Romano, David Stumbo
Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.
Type:
Application
Filed:
March 24, 2005
Publication date:
October 6, 2005
Applicant:
Nanosys, Inc.
Inventors:
Robert Dubrow, L. Sloan, Richard Kronenthal, Arthur Alfaro, Matthew Collier, Erica Rogers, Michael Gertner
Abstract: This invention provides novel capacitors comprising nanofiber enhanced surface area substrates and structures comprising such capacitors, as well as methods and uses for such capacitors.
Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.
Type:
Application
Filed:
December 9, 2004
Publication date:
September 29, 2005
Applicant:
Nanosys, Inc.
Inventors:
Eric Scher, Mihai Buretea, Calvin Chow, Stephen Empedocles, Andreas Meisel, J. Parce