Patents Assigned to National Institute of Advanced Industrial Science and Technology
  • Patent number: 11548004
    Abstract: A method for producing a liquid reaction mixture containing a radioisotope, in particular, a radioactive composition, minimizes device contamination with radioactive substances and increase speed and accuracy with which droplets are mixed. The method for producing a radioactive composition includes placing at least one first droplet L1 containing a radionuclide and at least one second droplet L2 containing a labeling substance on at least two respective dimples 5 among dimples 5 on a front surface 4b of an insulating layer 4 of a liquid manipulation device 1, and obtaining a liquid mixture M by using a change in electrostatic force caused by changing voltage applied to the electrodes 3 to thereby cause a relative movement between the at least one first droplet L1 and the at least one second droplet L2 so that the at least one first droplet L1 and the at least one second droplet L2 are mixed together at any one dimple among the dimples 5.
    Type: Grant
    Filed: May 11, 2021
    Date of Patent: January 10, 2023
    Assignees: National Institute of Advanced Industrial Science and Technology, Kyoto Pharmaceutical University
    Inventors: Katsuo Mogi, Tohru Natsume, Shungo Adachi, Tomoya Inoue, Hiroyuki Kimura
  • Patent number: 11552298
    Abstract: An object of the present invention is to provide a lithium-ion secondary battery having a large charge and discharge capacity and excellent cycle characteristics irrespective of kind and shape of a current collector. The lithium-ion secondary battery comprises an electrode comprising a primer layer for protecting a current collector and a crosslinking agent layer comprising a compound being capable of crosslinking an aqueous binder contained in the primer layer, the both layers being disposed between a current collector and an active material layer comprising a sulfur-based active material.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: January 10, 2023
    Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventors: Naoto Yamashita, Takashi Mukai, Masahiro Yanagida, Tatsuya Kubo, Fumiya Chujo
  • Publication number: 20230003813
    Abstract: Proposed is a phase shift introduction method, a structure, and a circuit device for eliminating or minimizing a risk associated with dissimilar materials, solving in principle a problem of mixing of a signal current and a control current that occurs due to DC connection of a phase shifter to a signal line, and stably and reliably providing a phase shift that is desired to be introduced without being adversely effected by noise generated by an ambient magnetic field, which is generated due to use of an external power supply. A structure according to the present invention includes a phase shifter 101 and a closed-loop circuit 103 that is directly used for computation or storage, and a quantum phase shift is generated in the closed-loop circuit 103 by using a fractional flux quantum captured by the phase shifter 101 that is DC-separated from the closed-loop circuit 103.
    Type: Application
    Filed: November 26, 2020
    Publication date: January 5, 2023
    Applicants: National Institute of Advanced Industrial Science and Technology, NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tokyo University of Science Foundation
    Inventors: Yasumoto TANAKA, Hirotake YAMAMORI, Takashi YANAGISAWA, Shunichi ARISAWA, Taichiro NISHIO
  • Patent number: 11542631
    Abstract: A method for producing a p-type 4H—SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: January 3, 2023
    Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, SHOWA DENKO K.K., DENSO CORPORATION
    Inventors: Kazuma Eto, Tomohisa Kato, Hiromasa Suo, Yuichiro Tokuda
  • Patent number: 11544601
    Abstract: A system for generating topic inference information of lyrics that can provide more useful for topic interpretation of lyrics. A device for learning topic numbers performs an operation of updating and learning topic numbers, which performs an operation of updating topic numbers on all of a plurality of lyrics data of each of a plurality of artists, for a predetermined number of times. The operation of updating topic numbers updates the topic number assigned to a given lyrics data of a given artist using a random number generator having a deviation of appearance probability corresponding to a probability distribution over topic numbers. An outputting device outputs the topic numbers of the plurality of lyrics data for each of the plurality artists, and a probability distribution over words for each of the topic numbers.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: January 3, 2023
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kosetsu Tsukuda, Masataka Goto
  • Patent number: 11538672
    Abstract: Provided is an inductively coupled plasma spectrometric system for measuring an emission state of plasma into which a measurement target sample is fed, the inductively coupled plasma spectrometric system including: a spectrometer configured to resolve light emitted in a measurement region set in the plasma into a plurality of wavelength components; a detection device configured to detect a spatial distribution of the resolved light; and a measuring device configured to measure the detected spatial distribution at every measurement unit time, the measurement unit time being at least shorter than time required for the sample to pass through the measurement region.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: December 27, 2022
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Yoshiyuki Teramoto, Akihiro Wakisaka
  • Patent number: 11535941
    Abstract: A problem to be solved by the present invention is that there is no method for forming a dense structure on a porous structure at low cost. In addition, another object is to provide a high quality and inexpensive structure of a brittle material and a laminate thereof as an intermediate layer for facilitating formation of a dense structure on a porous structure. A structure is provided having a brittle particle assembly having a plurality of brittle particles, wherein the brittle particle assemblies are arranged adjacently to each other, and the brittle particles having a brittle material region in the periphery are crosslinked (connected) by the brittle material region to bond the brittle particles to each other, and thereby form a brittle material crosslinked structure region preventing the mobility of the brittle particles.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: December 27, 2022
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kentaro Shinoda, Takanori Saeki, Masakazu Mori, Jun Akedo
  • Patent number: 11535717
    Abstract: There is provided a novel ionic composite material that can be molded into various shapes using lignin sulfonic acid as one of raw materials thereof, and having flexibility and elasticity, to significantly improve the strength and toughness and impart complete biodegradability thereto. It was found that a combination of ?-polylysine (?-PL) which is a cationic polymer that is produced by microorganisms and lignin sulfonic acid exhibits excellent strength and toughness. In addition, ?-PL used in this technology is a biodegradable polymer that is completely degraded by microorganisms and the like in the environment. Since lignin sulfonic acid is also a biodegradable polymer, it is thought that a complex in which ?-PL and lignin sulfonic acid are mixed in this technology will exhibit complete biodegradability, and more applications thereof can be expected when utilizing the strength, durability, and biodegradability thereof in addition to the improved strength and toughness.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: December 27, 2022
    Assignees: JNC CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kazunori Ushimaru, Tokuma Fukuoka, Tomotake Morita
  • Publication number: 20220403101
    Abstract: The present invention provides a biomass-derived polyester compound useful as a rubber material or an adhesive material, the compound including a multiple bond in the molecule. By synthesizing an ester compound composed of a hydroxycinnamic acid and a fatty acid, and carrying out polycondensation reaction using the ester compound as a monomer, a polyester compound containing cinnamic acid and a ricinoleic acid derivative that are alternately linked to each other can be efficiently obtained. For example, an ester compound of General Formula (1) is produced. (In the formula, the substituents R1 and R2 each represent a hydrogen atom or a methoxy group; the substituent R3 represents an alkyl group or an alkenyl group; and n represents an integer of 10 to 100).
    Type: Application
    Filed: November 4, 2020
    Publication date: December 22, 2022
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Koji NEMOTO, Atsushi YAMAMOTO, Kazuhiko SATO
  • Publication number: 20220402058
    Abstract: A mounting wiring board, containing a base, an electrode portion disposed on the base, and a heat generation pattern disposed on the electrode portion and to be heated by a standing wave of a microwave, in which an occupation area of the heat generation pattern is smaller than an area of an upper surface of the electrode portion; an electronic device mounting board using the mounting wiring board; a method of mounting the electronic device; a microwave heating method, which contains heating an object to be heated provided via the heat generation pattern; and a microwave heating apparatus.
    Type: Application
    Filed: November 10, 2020
    Publication date: December 22, 2022
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kenji KANAZAWA, Sei UEMURA, Masateru NISHIOKA, Takashi NAKAMURA
  • Publication number: 20220402057
    Abstract: A magnetic-field melting solder that melts by the action of an AC magnetic field is provided. The magnetic-field melting solder includes solder material; and magnetic material composing of ferrite or Ni, a proportion of the magnetic material to the entire magnetic-field melting solder being 0.005% to 5% by weight. A joining method using the magnetic-field melting solder includes providing the magnetic-field melting solder between an electrode on a substrate and an electrode of an electronic component, and joining together the electrode on the substrate and the electrode of the electronic component by generating an AC magnetic field around the substrate and thereby melting the magnetic-field melting solder.
    Type: Application
    Filed: November 18, 2020
    Publication date: December 22, 2022
    Applicants: SENJU METAL INDUSTRY CO., LTD., National Institute of Advanced Industrial Science and Technology
    Inventors: Haruya SAKUMA, Kenichi TOMITSUKA, Hisahiko YOSHIDA, Kenji KANAZAWA, Sei UEMURA, Takashi NAKAMURA, Masateru NISHIOKA
  • Publication number: 20220407003
    Abstract: An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.
    Type: Application
    Filed: August 26, 2022
    Publication date: December 22, 2022
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Hisashi SHIMA, Yasuhisa NAITOH, Hiroyuki AKINAGA, Makoto TAKAHASHI
  • Patent number: 11527692
    Abstract: To provide a thermoelectric conversion material having low environmental load and an excellent thermoelectric figure of merit ZT and a thermoelectric conversion module including the thermoelectric conversion material. A thermoelectric conversion material of the present invention is characterized by being a compound represented by Chemical Formula (1). Cu26-xMxA2E6-yS32??(1) In Chemical Formula (1), M represents a metal material including at least one of Mn, Fe, Co, Ni, and Zn; A represents a metal material including at least one of Nb and Ta; E represents a metal material including at least one of Si, Ge, and Sn; x represents a numerical value of 0 or more and 4 or less; and y represents a numerical value of more than 0 and 1 or less.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: December 13, 2022
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Michihiro Ohta, Yuta Kikuchi, Yohan Bouyrie, Koichiro Suekuni, Toshiro Takabatake
  • Patent number: 11527694
    Abstract: A thermoelectric element to convert thermal energy into electrical energy includes a first electrode part, a second electrode part having a different work function than the first electrode part and arranged at a distance from the first electrode part, on a same surface of a substrate as the first electrode part, and a middle part provided between the first electrode part and the second electrode part.
    Type: Grant
    Filed: February 18, 2019
    Date of Patent: December 13, 2022
    Assignees: GCE INSTITUTE INC., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Hiroshi Goto, Minoru Sakata, Ryutaro Maeda, Jian Lu
  • Patent number: 11522055
    Abstract: A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm?1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 ?m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: December 6, 2022
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Shinya Ohmagari, Hideaki Yamada, Hitoshi Umezawa, Nobuteru Tsubouchi, Akiyoshi Chayahara, Yoshiaki Mokuno, Akinori Seki, Fumiaki Kawai, Hiroaki Saitoh
  • Publication number: 20220369959
    Abstract: The present invention is provided with a four-wavelength light emitter that emits four kinds of wavelengths of light toward a predetermined site on a living body; a light receiver that receives the four kinds of wavelengths of light transmitted through the predetermined site on the living body; a received light intensity information acquirer that acquires received light intensity information for the four wavelengths on the basis of an optical signal received by the light receiver; an absorbance time change value acquirer that finds time change values of the absorbances corresponding to the four wavelengths on the basis of the received light intensity information of the four wavelengths; a calibration data table that stores calibration data for finding a predetermined component in blood based on the absorbance time change values; and a component concentration acquirer that finds the concentration of the predetermined component in the blood.
    Type: Application
    Filed: November 5, 2020
    Publication date: November 24, 2022
    Applicants: National Institute of Advanced Industrial Science and Technology, CBC Co., Ltd.
    Inventors: Hiromitsu FURUKAWA, Anri WATANABE, Shinichi NAKAMURA, Hiroaki AIZAWA
  • Publication number: 20220370324
    Abstract: The objective of the present invention is to provide a thickener that can increase the viscosity of a composition with suppressing stickiness and maintaining use feeling in the case of applying the composition on the skin or the like, since the thickener does not contain a polymer thickener or the content amount of a polymer thickener is small. The thickener according to the present invention is characterized in comprising a phospholipid, a biosurfactant, and a 1,2-diol compound represented by the following formula (I): HO—CH2—CH(OH)—R1 ??(I) wherein R1 is a hydrocarbon group having a carbon number of 5 or more and 12 or less.
    Type: Application
    Filed: December 3, 2020
    Publication date: November 24, 2022
    Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, KANEKA CORPORATION
    Inventors: Tomohiro IMURA, Toshiaki TAIRA, Tadao TSUJI, Satohiro YANAGISAWA
  • Patent number: 11506583
    Abstract: A test method for characterizing the mechanical properties including the surface adhesion energy ? on the basis of the experimentally derived P-A relationship, where P means the indentation load under the penetration depth h of an indenter pressed onto a test specimen with surface adhesion, and A means the contact area of indentation at the contact radius a under the applied load of P. This test method enables the implementation for quantitatively as well as simultaneously characterizing the adhesion energy as well as the various mechanical properties (elastic/elastoplastic/viscoelastic properties) of soft materials.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: November 22, 2022
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Tatsuya Miyajima, Mototsugu Sakai
  • Publication number: 20220360049
    Abstract: A semiconductor laser including: an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and a pulse injection means that injects excitation energy for a sub-nanosecond duration into the optical resonator, wherein the light-emitting layer has an at least five-period multiple quantum well structure, and the semiconductor laser generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.
    Type: Application
    Filed: August 21, 2020
    Publication date: November 10, 2022
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Takahiro NAKAMURA, Ryunosuke KURODA, Hidefumi AKIYAMA, Changsu KIM, Takashi ITO, Hidekazu NAKAMAE
  • Publication number: 20220360044
    Abstract: A semiconductor laser including: an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and a pulse injection means that injects excitation energy for a sub-nanosecond duration into the optical resonator, wherein the optical resonator has a multi-section structure separated into at least one gain region and at least one absorption region, and the semiconductor laser generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.
    Type: Application
    Filed: August 21, 2020
    Publication date: November 10, 2022
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Takahiro NAKAMURA, Ryunosuke KURODA, Hidefumi AKIYAMA, Changsu KIM, Takashi ITO, Hidekazu NAKAMAE