Patents Assigned to National Taiwan University
  • Publication number: 20240058400
    Abstract: An isolated bacterial strain of Lactiplantibacillus plantarum subsp. plantarum MFM 30-3 deposited under the DSMZ Accession No. DSM 34213 is provided; a probiotic composition including an Lactiplantibacillus plantarum subsp. plantarum MFM 30-3 and optionally, one or more additional probiotic organisms that enhance the probiotic activity of the Lactiplantibacillus plantarum subsp. plantarum MFM 30-3 is also provided; and a method for preventing or treating chronic kidney disease in a subject in need thereof including: administering to the subject a pharmaceutically effective amount of the probiotic composition including an isolated bacterial strain of Lactiplantibacillus plantarum subsp. plantarum MFM 30-3, and optionally, one or more additional probiotic organisms that enhance the probiotic activity of the Lactiplantibacillus plantarum subsp. plantarum MFM 30-3 is further provided.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 22, 2024
    Applicant: National Taiwan University
    Inventors: Ming-Ju Chen, Hsiao-Wen Huang
  • Publication number: 20240063284
    Abstract: A method includes forming an epitaxial stack over a semiconductor substrate, wherein the epitaxial stack comprises a plurality of sacrificial layers and a plurality of channel layers alternately arranged over the semiconductor substrate, and each of the sacrificial layers is a multi-layer film comprising a bottom epitaxial layer, a middle epitaxial layer over the bottom epitaxial layer, and a top epitaxial layer over the middle epitaxial layer, wherein the middle epitaxial layer has a lower germanium concentration than the bottom and top epitaxial layers; laterally recessing the sacrificial layers to form sidewall recesses alternating with the channel layers; forming inner spacers in the sidewall recesses; forming source/drain epitaxial structures on opposite sides of the channel layers.
    Type: Application
    Filed: August 17, 2022
    Publication date: February 22, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chien-Te TU, Chee-Wee LIU
  • Patent number: 11908892
    Abstract: A device comprises source/drain regions over a substrate and spaced apart along a first direction, a first gate structure between the source/drain regions, and a first channel structure surrounded by the first gate structure. The first channel structure comprises alternately stacking first semiconductor layers and second semiconductor layers. When viewed in a cross section taken along a second direction perpendicular to the first direction, central axes of the second semiconductor layers are laterally offset from central axes of the first semiconductor layers.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: February 20, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Hung-Yu Ye, Yu-Shiang Huang, Chien-Te Tu, Chee-Wee Liu
  • Publication number: 20240055033
    Abstract: A computing-in-memory circuitry includes multiple digital-to-analog converters, multiple computing arrays, and multiple charge processing networks. The digital-to-analog converters convert external data into input data and the digital-to-analog converters are connected in series with a corresponding plurality of output capacitor pairs. The computing arrays receive the input data from both ends and execute a computation to output a first computing value. The charge processing networks receive and accumulate the first computing values over a predetermined time interval through switching pairs in series with the output capacitor pairs. The charge processing networks evenly distribute charges of the first computing value to selected output capacitor pairs and compare voltage differences between two ends of the output capacitor pairs to output a second computing value.
    Type: Application
    Filed: August 9, 2022
    Publication date: February 15, 2024
    Applicant: National Taiwan University
    Inventors: Ying-Tuan Hsu, Tsung-Te Liu, Tzi-Dar Chiueh
  • Patent number: 11899194
    Abstract: A margin assessment method is provided. Under cooperation of harmonic generation microscopy (HGM) and a deep learning method, the margin assessment method can instantaneously and digitally determine whether a 3D image group generated by an HGM imaging system is a malignant tumor or the surrounding normal skin, so as to assist in determining margins of a lesion.
    Type: Grant
    Filed: October 20, 2021
    Date of Patent: February 13, 2024
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Chi-Kuang Sun, Yi-Hua Liao, Chia-I Chen
  • Patent number: 11896340
    Abstract: A robot navigation system includes a handheld robot, a spatial information measuring device, a computing module and a display. The hand-held robot has a body, a tool and a movable connection mechanism. The movable connection mechanism is connected between the body and the tool, so that the tool can move relative to the body. The spatial information measuring device is configured to track the body, the tool and a target. The computing module is connected to the spatial information measuring device to obtain a plurality of relative positions between the body, the tool and the movable connection mechanism with respect to the target. The computing module calculates a guiding region according to the relative positions and mechanical parameters of the handheld robot. The display is configured to display the guiding region and the handheld robot based on the coordinate of the target.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: February 13, 2024
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Ping-Lang Yen, Tsung-Han Ho
  • Patent number: 11898010
    Abstract: Present invention is related to a polyimide of formula as following: and a ketone-containing alicyclic dianhydride of formula as following: wherein: R1, R2, R3, R4 denote hydrogen atom or carbon containing functional group with carbon number at a range of 1-4; R5 denotes diamine group; and n equals to any positive integer.
    Type: Grant
    Filed: July 23, 2021
    Date of Patent: February 13, 2024
    Assignee: National Taiwan University of Science and Technology
    Inventors: Jyh-Chien Chen, Hsiang Jung Lee, Kai-Cheng Zhong
  • Publication number: 20240049212
    Abstract: A method for performing radio resource allocation in a TN-NTN mixed system is provided. The system includes a satellite that covers an NTN cell, and a plurality of TN base stations (TN BSs) within a coverage of the satellite. The NTN cell serves a plurality of NTN user equipments (NTN UEs). The method includes dividing the plurality of NTN UEs into X NTN UE groups; partitioning a radio resource into M parts, where M?X; dividing the plurality of TN BSs into M TN BS groups; deciding radio resource allocation regarding the plurality of NTN UEs, by allocating an i-th part of the radio resource to an i-th NTN UE group, where i=1, 2, . . . , X; and deciding radio resource allocation regarding the plurality of TN BSs, by allocating a sum of a j-th to an M-th parts of the radio resource to a j-th TN BS group, where j=1, 2, . . . , M.
    Type: Application
    Filed: July 20, 2023
    Publication date: February 8, 2024
    Applicants: MEDIATEK INC., National Taiwan University
    Inventors: Hao-Wei LEE, I-Kang FU, Chun-Chia CHEN, Chen-I LIAO, Hung-Yu WEI
  • Publication number: 20240049273
    Abstract: This disclosure provides a method, an apparatus, and a non-transitory computer-readable medium for radio resource allocation for a terrestrial network (TN) cell. In the method, the TN cell is determined to be outside a coverage of a first non-terrestrial network (NTN) cell. In response to the TN cell being outside the coverage of the first NTN cell, a radio resource is allocated to the TN cell based on a radio resource of the first NTN cell.
    Type: Application
    Filed: July 28, 2023
    Publication date: February 8, 2024
    Applicants: MEDIATEK INC., National Taiwan University
    Inventors: Hao-Wei LEE, I-Kang FU, Chun-Chia CHEN, Chen-I LIAO, Hung-Yu WEI
  • Patent number: 11891447
    Abstract: Methods for treating cancer and/or reducing sternness of cancer stem cells in a subject using a CD14 antagonist, which may be an anti-CD14 antibody.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: February 6, 2024
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventor: Huei-Wen Chen
  • Publication number: 20240040933
    Abstract: The present invention discloses a metal-free perovskite film and metal-free perovskite piezoelectric nanogenerators comprising the film. The metal-free perovskite film is organic, lead-free and metal-free. The open-circuit voltage of the metal-free perovskite piezoelectric nanogenerators can reach 9˜16 V and the short-circuit current of the metal-free perovskite piezoelectric nanogenerators can reach 38˜55 nA. Also, the metal-free perovskite piezoelectric nanogenerators can be used as self-powered strain sensor of human-machine interface application and be adopted in in vitro electrical stimulation devices.
    Type: Application
    Filed: November 29, 2022
    Publication date: February 1, 2024
    Applicants: NATIONAL CENTRAL UNIVERSITY, NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Po-Kang YANG, Meng-Lin TSAI, Han-Song WU, Shih-Min WEI, Shih-Min HUANG
  • Publication number: 20240032999
    Abstract: The present invention relates to a method and apparatus for non-invasive image-observing the density of an intra-epidermal nerve fiber of human skin, in which the method includes: providing a nonlinear optical microscopy device for capturing an intra-epidermal nerve fiber structural image of an acquisition area of a to-be-tested human skin to observe continuous signals of intra-epidermal nerve fiber images, wherein the nonlinear optical microscopy device includes: a laser light source for emitting laser light with a pulsed laser, and an image processing member for processing image signals; focusing the laser light on the intra-epidermal nerve fiber to obtain nerve signals of the intra-epidermal nerve fiber that have a length of at least three points of the intra-epidermal nerve fiber, and constitute a plurality of nerve fibers; and calculating the total number of nerve fiber signals of the to-be-tested human skin, and dividing it by the total area of captured images to obtain the density of the to-be-tested h
    Type: Application
    Filed: July 28, 2022
    Publication date: February 1, 2024
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: CHI-KUANG SUN, PEI-JHE WU, HSIAO-CHIEH TSENG
  • Patent number: 11883560
    Abstract: An intervertebral fusion device includes a structural ceramic body. The structural ceramic body has a bottom surface, a top surface, a peripheral surface connected between the bottom surface and the top surface, and at least one pore channel penetrating the bottom surface and the top surface. The inner surface of the pore channel is either a convex curved surface or a funnel-shaped surface. For the pore channel having the convex curved surface, the pore diameter of the pore channel gradually expands from the center of the pore channel to the top surface and the bottom surface. The pore diameter can also gradually expand from the bottom surface to the top surface. The peripheral surface of the structural ceramic body is wavy or zigzag.
    Type: Grant
    Filed: July 26, 2021
    Date of Patent: January 30, 2024
    Assignee: National Taiwan University
    Inventor: Wei-Hsing Tuan
  • Patent number: 11887299
    Abstract: An image processing system includes an ophthalmoscope device and a processor. The ophthalmoscope device is configured to obtain a color fundus image. The processor is configured to receive the color fundus image; generate a blood vessel segmentation image that corresponds to the color fundus image using a computer vision algorithm or a deep learning model; preprocess the color fundus image and the blood vessel segmentation image to obtain an initial input image; and input the initial input image into a convolutional neural network. The convolutional neural network outputs a value. In addition, the processor generates fundus image analysis information from the cup-to-disc ratio and the value.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: January 30, 2024
    Assignees: ACER INCORPORATED, NATIONAL TAIWAN UNIVERSITY HOSPITAL
    Inventors: Chun-Hsien Yu, Jehn-Yu Huang, Cheng-Tien Hsieh, Yun-Ting Lin
  • Publication number: 20240030034
    Abstract: A method includes forming a 2-D material semiconductor layer over a substrate; forming source/drain electrodes covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the 2-D material semiconductor layer exposed by the source/drain electrodes; forming a first gate dielectric layer over the portion of the 2-D material semiconductor layer by using a physical deposition process; forming a second gate dielectric layer over the first gate dielectric layer by using a chemical deposition process, in which a thickness of the first gate dielectric layer is less than a thickness of the second gate dielectric layer; and forming a gate electrode over the second gate dielectric layer.
    Type: Application
    Filed: October 4, 2023
    Publication date: January 25, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Shih-Yen LIN, Po-Cheng TSAI, Yu-Wei ZHANG
  • Publication number: 20240021547
    Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and overlaps with the transistor. The ring resonator includes a conductive loop and an impedance matching element. The conductive loop includes a loop portion having two first parts and a second part and two feeding lines. Each of the first parts of the loop portion is between the second part of the loop portion and one of the feeding lines, and a tunnel barrier of the transistor is closer to the second part than to the feeding lines. The impedance matching element is closer to the feeding lines than to the second part.
    Type: Application
    Filed: September 27, 2023
    Publication date: January 18, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Shih-Yuan CHEN, Jiun-Yun LI, Rui-Fu XU, Chiung-Yu CHEN, Ting-I YEH, Yu-Jui WU, Yao-Chun CHANG
  • Publication number: 20240021479
    Abstract: A device includes a bottom transistor, a top transistor, and an epitaxial isolation structure. The bottom transistor includes a first channel layer, first source/drain epitaxial structures, and a first gate structure. The first source/drain epitaxial structures are on opposite sides of the first channel layer. The first gate structure is around the first channel layer. The top transistor is over the bottom transistor and includes a second channel layer, second source/drain epitaxial structures, and a second gate structure. The second source/drain epitaxial structures are on opposite sides of the second channel layer. The second gate structure is around the second channel layer. The epitaxial isolation structure is between and in contact with one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, such that the one of the first source/drain epitaxial structures is electrically isolated from the one of the second source/drain epitaxial structures.
    Type: Application
    Filed: September 26, 2023
    Publication date: January 18, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chien-Te TU, Hsin-Cheng LIN, Chee-Wee LIU
  • Publication number: 20240021698
    Abstract: A semiconductor device includes a substrate, a semiconductor fin, a silicon layer, a gate structure, gate spacers, and source/drain structures. The semiconductor fin is over the substrate. The silicon layer is over the semiconductor fin. The gate structure is over the silicon layer, in which the gate structure includes an interfacial layer over the silicon layer, a gate dielectric layer over the interfacial layer, and a gate electrode over the gate dielectric layer. The gate spacers are on opposite sidewalls of the gate structure and in contact with the interfacial layer of the gate structure, in which a bottom surface of the interfacial layer is higher than bottom surfaces of the gate spacers. The source/drain structures are on opposite sides of the gate structure.
    Type: Application
    Filed: July 14, 2023
    Publication date: January 18, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Hsien-Wen WAN, Yi-Ting CHENG, Ming-Hwei HONG, Juei-Nai KWO, Bo-Yu YANG, Yu-Jie HONG
  • Publication number: 20240018484
    Abstract: An in vitro co-culture system comprising cancer-associated fibroblasts (CAFs) and cancer cells for producing and maintaining cancer stem cells and uses thereof for identifying agents capable of reducing cancer cell stemness. Also disclosed herein are a paracrine network through which CAFs facilitate production and/or maintenance of cancer stem cells and the use of components of such a paracrine network for prognosis purposes and for identifying cancer patients who are likely to respond to certain treatment.
    Type: Application
    Filed: August 21, 2023
    Publication date: January 18, 2024
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Pan-Chyr Yang, Huei-Wen Chen, Wan-Jiun Chen
  • Publication number: 20240014035
    Abstract: A semiconductor structure includes a semiconductor substrate, a gate structure, a source/drain structure, a contact, a dielectric layer, and a metal line. The gate structure is on the semiconductor substrate. The source/drain structure is adjacent to the gate structure. The contact lands on the source/drain structure. The dielectric layer spas the contact and the gate structure. The metal line extends through the dielectric layer to the contact. The metal line includes a liner over the contact, a magnetic layer over the liner, a graphene layer over the magnetic layer, and a filling metal over the graphene layer. The magnetic layer has a greater permeability coefficient than the filling metal.
    Type: Application
    Filed: September 21, 2023
    Publication date: January 11, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Jian-Zhi HUANG, Yun-Hsuan HSU, I-Chih NI, Chih-I WU