Patents Assigned to National Taiwan University
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Patent number: 12220377Abstract: The present invention provides a portable guidance device for cardiopulmonary resuscitation, which comprises a tri-axial gravity sensing element, a pressure sensing element, a sound output element, a visual output element and a microcontroller. The portable guidance device for cardiopulmonary resuscitation can actively connect to the medical rescue system and issue an alarm to guide the surrounding passers-by to perform real-time rescue and perform correct cardiopulmonary resuscitation, so as to improve the efficiency and accuracy of chest compressions.Type: GrantFiled: December 13, 2019Date of Patent: February 11, 2025Assignees: NATIONAL TAIWAN UNIVERSITY HOSPITAL, FINE-I LTD.Inventors: Ting An Yen, Ching Chia Wang, Hwa Chang Wang
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Patent number: 12220436Abstract: An isolated bacterial strain of Lactiplantibacillus plantarum subsp. plantarum MFM 30-3 deposited under the DSMZ Accession No. DSM 34213 is provided; a probiotic composition including an Lactiplantibacillus plantarum subsp. plantarum MFM 30-3 and optionally, one or more additional probiotic organisms that enhance the probiotic activity of the Lactiplantibacillus plantarum subsp. plantarum MFM 30-3 is also provided; and a method for preventing or treating chronic kidney disease in a subject in need thereof including: administering to the subject a pharmaceutically effective amount of the probiotic composition including an isolated bacterial strain of Lactiplantibacillus plantarum subsp. plantarum MFM 30-3, and optionally, one or more additional probiotic organisms that enhance the probiotic activity of the Lactiplantibacillus plantarum subsp. plantarum MFM 30-3 is further provided.Type: GrantFiled: November 6, 2023Date of Patent: February 11, 2025Assignee: National Taiwan UniversityInventors: Ming-Ju Chen, Hsiao-Wen Huang
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Patent number: 12217134Abstract: A quantum charge-coupled device including a first ion, a second ion, a fixed ion trap, an adjustable ion trap, and an excitation light source is provided. The fixed ion trap is configured to stationarily trap the first ion. The adjustable ion trap works as an ion rail disposed beside the fixed ion trap, wherein the ion rail is configured to make the second ion move at a constant velocity along the ion rail. The excitation light source is configured to irradiate an incident light beam. The incident light beam includes a series of light pulses and covers the first ion and the second ion when a distance between them becomes less than or equal to a proximity range, such that a quantum entangled state is directly built between the first ion and the second ion in uniform motion.Type: GrantFiled: November 24, 2022Date of Patent: February 4, 2025Assignee: National Taiwan UniversityInventors: Guin-Dar Lin, Wen-Han Png
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Publication number: 20250032015Abstract: A blood physiological parameter sensing device includes a housing, a flow channel structure, a control unit and a sensing unit. The flow channel structure is disposed in the housing and forms a channel for a liquid to be measured to pass. The control unit is disposed in the housing. The sensing unit is disposed in the housing, is electrically connected to the control unit, and has a sensing end. The sensing end passes through the flow channel structure, is configured in the channel, and has an electrochemical sensing material. The electrochemical sensing material is used to exchange electrons with the blood physiological parameter in the liquid to be measured to produce redox reactions to generate current or voltage change parameters. The sensing unit transmits the current or voltage change parameters to the control unit, which obtains a blood physiological parameter concentration value to achieve instantaneous and continuous monitor the patients.Type: ApplicationFiled: July 22, 2024Publication date: January 30, 2025Applicants: National Taiwan University, National Taiwan University Hospital Hsin-Chu Branch, National Yang Ming Chiao Tung UniversityInventors: Yih-Sharng CHEN, Hsiao-En TSAI, Yu-Ting CHENG
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Patent number: 12208115Abstract: A pH-responsive hydrogel, which is synthesized by using mixed pectin and sucralfate treated with a small amount of acid to form a pH-responsive hydrogel. The pH-responsive hydrogel can form a temporary coating on the surface of the gastrointestinal tract to reduce excessive nutrient absorption, and exhibits excellent barrier properties and mucosal adhesion effects, which are useful for reducing blood sugar rise and weight gain, the liver fat accumulation, body fat accumulation and blood low-density lipoprotein that have a significant effect. In addition, the technical principles disclosed in the pH-responsive hydrogel should be applied to other polymer materials to manufacture different pH-responsive hydrogels.Type: GrantFiled: December 5, 2022Date of Patent: January 28, 2025Assignees: NATIONAL HEALTH RESEARCH INSTITUTES, NATIONAL TAIWAN UNIVERSITYInventors: Feng-Huei Lin, Rui-Chian Tang, Tzu-Chien Chen
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Publication number: 20250030162Abstract: The present invention is a reconfigurable antenna, which includes a total reflection part, a partial reflection part, a partial transmission part, and a radiation part stacked in sequence. A resonant cavity is formed between the partial reflection part and the total reflection part. The radiation part is arranged in the resonant cavity. So that the electromagnetic wave radiated by the radiation part is reflected in the resonant cavity. The electromagnetic wave forms constructive interference during the reflection of the resonant cavity. The resonant cavity makes the electromagnetic wave form the same phase electromagnetic wave and radiation penetrating the reflection part. The partial transmission part is regulated to form beam reconstruction conditions, and the same-phase electromagnetic waves are formed into beams and radiated into space by the beam control conditions.Type: ApplicationFiled: July 19, 2023Publication date: January 23, 2025Applicant: National Taiwan UniversityInventors: Yi-Cheng LIN, Ching-Mei WANG, Chang-Kai LAI
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Patent number: 12206148Abstract: The invention discloses a filter device. The filter device comprises a substrate, at least one transmission conductor, and a reference conductor having a slotted structure. The substrate is provided at a first surface thereof with the transmission conductor, and provided at a second surface thereof with the reference conductor. The slotted structure comprises a frame portion, a slotted portion, and a hollow portion. The slotted portion surrounds the frame portion, and the hollow portion is formed in the frame portion. At least one impedance unit is configured on the frame portion. The equivalent filter circuit of the filter device is formed between the transmission conductor, the slotted structure, the reference conductor, and the impedance unit. Thereby, the equivalent filter circuit absorbs at least one noise at at least one specific frequency by the impedance unit to avoid the noise reflected to affect the transmission quality of signal.Type: GrantFiled: December 10, 2021Date of Patent: January 21, 2025Assignee: National Taiwan UniversityInventors: Tzong-Lin Wu, Hsu-Wei Liu, Chi-Hsuan Cheng, Po-Jui Li
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Patent number: 12198340Abstract: Provided are a system and a method for cardiovascular risk prediction, where artificial intelligence is utilized to perform segmentation on non-contrast or contrast medical images to identify precise regions of the heart, pericardium, and aorta of a subject, such that the adipose tissue volume and calcium score can be derived from the medical images to assist in cardiovascular risk prediction. Also provided is a computer readable medium for storing a computer executable code to implement the method.Type: GrantFiled: May 31, 2022Date of Patent: January 14, 2025Assignee: NATIONAL TAIWAN UNIVERSITYInventors: Tzung-Dau Wang, Wen-Jeng Lee, Yu-Cheng Huang, Chiu-Wang Tseng, Cheng-Kuang Lee, Wei-Chung Wang, Cheng-Ying Chou
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Patent number: 12198305Abstract: The present disclosure relates to a data processing method, and more specifically, to a digital image processing method to enable a rapid noise-suppressed contrast enhancement in an optical linear or nonlinear microscopy imaging application. The disclosed method digitally mimics a hardware-based feedback-driven adaptive or controlled illumination technique by means of digitally resembling selective laser-on and laser-off states so as to selectively optimize the signal strength and hence the visibility of the weak-intensity morphologies while mostly preventing saturation of the brightest structures.Type: GrantFiled: May 30, 2022Date of Patent: January 14, 2025Assignee: National Taiwan UniversityInventors: Chi-Kuang Sun, Bhaskar Jyoti Borah
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Publication number: 20250015141Abstract: A semiconductor device includes a substrate, a first dielectric layer, a channel layer and source/drain electrodes. The first dielectric layer is over the substrate. The channel layer is over the first dielectric layer. Source/drain electrodes are over the channel layer. The source/drain electrodes comprise a 2D semimetal material. The channel layer comprises a 2D semiconductor material interfacing the 2D semimetal material of the source/drain electrodes.Type: ApplicationFiled: July 7, 2023Publication date: January 9, 2025Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Jian-Zhi HUANG, Yu-Tung LIN, En-Cheng CHANG, Ting-Ying CHIU, I-Chih NI, Chih-I WU
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Patent number: 12191145Abstract: A method of forming a semiconductor device includes forming a semiconductor strip extending above a semiconductor substrate, forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip, recessing a portion of the semiconductor strip, etching the STI regions to form a recess in the STI regions, forming a first thermal conductive layer in the recess, forming a source/drain epitaxy structure on the first thermal conductive layer, and forming a gate stack across the semiconductor strip and extending over the STI regions.Type: GrantFiled: June 7, 2022Date of Patent: January 7, 2025Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Chia-Che Chung, Chia-Jung Tsen, Chee-Wee Liu
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Patent number: 12191143Abstract: A plasma enhanced chemical vapor deposition (PECVD) method includes loading a wafer having a magnetic layer thereon into a processing chamber equipped with a radio frequency (RF) system, introducing an aromatic hydrocarbon precursor into the processing chamber, and turning on an RF source of the RF system to decompose the aromatic hydrocarbon precursor into active radicals at a frequency greater than about 1000 Hz to form a graphene layer over the magnetic layer.Type: GrantFiled: May 6, 2021Date of Patent: January 7, 2025Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Jian-Zhi Huang, Yun-Hsuan Hsu, I-Chih Ni, Chih-I Wu
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Patent number: 12191144Abstract: A method includes forming a mask layer above a substrate. The substrate is patterned by using the mask layer as a mask to form a trench in the substrate. An isolation structure is formed in the trench, including feeding first precursors to the substrate. A bias is applied to the substrate after feeding the first precursors. With the bias turned on, second precursors are fed to the substrate. Feeding the first precursors, applying the bias, and feeding the second precursors are repeated.Type: GrantFiled: July 28, 2022Date of Patent: January 7, 2025Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITYInventors: Chun-Yi Chou, Po-Hsien Cheng, Tse-An Chen, Miin-Jang Chen
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Patent number: 12191205Abstract: A method includes forming a semiconductive channel layer on a substrate. A dummy gate is formed on the semiconductive channel layer. Gate spacers are formed on opposite sides of the dummy gate. The dummy gate is removed to form a gate trench between the gate spacers, resulting in the semiconductive channel layer exposed in the gate trench. A semiconductive protection layer is deposited in the gate trench and on the exposed semiconductive channel layer. A top portion of the semiconductive protection layer is oxidized to form an oxidation layer over a remaining portion of the semiconductive protection layer. The oxidation layer is annealed after the top portion of the semiconductive protection layer is oxidized. A gate structure is formed over the semiconductive protection layer and in the gate trench after the oxidation layer is annealed.Type: GrantFiled: March 3, 2022Date of Patent: January 7, 2025Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Minghwei Hong, Juei-Nai Kwo, Tun-Wen Pi, Hsien-Wen Wan, Yi-Ting Cheng, Yu-Jie Hong
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Patent number: 12188862Abstract: A microscope is provided to measure HbA1c fraction. The microscope measures the HbA1c fraction of a single red blood cell (RBC) in a trace blood sample. The HbA1c fraction can be measured through a non-invasive way while the RBC flows in a human epidermal microvessel, too. The microscope comprises a laser device, an upright microscope, a light splitter, a light detector, and a mainframe. Unlike traditional methods, the HbA1c fraction can be measured in vitro or in vivo at the level of a single RBC. Accurate measurement is achieved. Misdiagnosis rate is reduced. The microscope provides HbA1c fractions from hundreds of RBCs, instead of averaging HbA1c fractions obtained from a large number of blood samples. Hence, the present invention is a method of detecting a HbA1c fraction of a single RBC, and is a microscope supporting blood-drawing measurement and non-invasive measurement simultaneously.Type: GrantFiled: February 24, 2023Date of Patent: January 7, 2025Assignee: National Taiwan UniversityInventors: Chi-Kuang Sun, Xu-hao Ye
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Patent number: 12191226Abstract: A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm?1K?1 and 1200 Wm?1K?1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.Type: GrantFiled: January 17, 2023Date of Patent: January 7, 2025Assignees: MEDIATEK INC., NATIONAL TAIWAN UNIVERSITYInventors: Ming-Tzong Yang, Hsien-Hsin Lin, Wen-Kai Wan, Chia-Che Chung, Chee-Wee Liu
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Publication number: 20250006639Abstract: A method includes loading a wafer having a dielectric layer thereon into a processing chamber; introducing a hydrocarbon precursor into the processing chamber; pyrolyzing the hydrocarbon precursor; introducing the pyrolyzed hydrocarbon precursor to the dielectric layer to form a graphene layer on the dielectric layer at a temperature lower than about 400° C.Type: ApplicationFiled: July 1, 2023Publication date: January 2, 2025Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Chi-Yuan KUO, Jia-Heng ZHU, I-Chih NI, Chih-I WU
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Publication number: 20250007179Abstract: Disclosed are a dual-polarization cavity-backed antenna, a package module and an array package module. The antenna includes a substrate, a magnetic current feeding structure, an electric current feeding structure, and a cavity-backed structure that is arranged between two surfaces of the substrate. The magnetic current feeding structure and the electric current feeding structure transfer energy into the cavity-backed structure, respectively radiating the orthogonally polarized electromagnetic wave. The electric field direction of the first electromagnetic wave and the magnetic field direction of the second electromagnetic wave occur on the same plane. The package module includes the dual-polarization cavity-backed antenna, a radio frequency control chip, and a control circuit unit. The array package module includes a plurality of the dual-polarization cavity-backed antennas, a radio frequency control unit including a single RF chip or chip set, and a control circuit unit.Type: ApplicationFiled: June 29, 2023Publication date: January 2, 2025Applicant: National Taiwan UniversityInventors: Yi-Cheng LIN, Tzu-Ming HUANG
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Patent number: 12170227Abstract: A device includes a bottom transistor, a top transistor, and an epitaxial isolation structure. The bottom transistor includes a first channel layer, first source/drain epitaxial structures, and a first gate structure. The first source/drain epitaxial structures are on opposite sides of the first channel layer. The first gate structure is around the first channel layer. The top transistor is over the bottom transistor and includes a second channel layer, second source/drain epitaxial structures, and a second gate structure. The second source/drain epitaxial structures are on opposite sides of the second channel layer. The second gate structure is around the second channel layer. The epitaxial isolation structure is between and in contact with one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, such that the one of the first source/drain epitaxial structures is electrically isolated from the one of the second source/drain epitaxial structures.Type: GrantFiled: September 26, 2023Date of Patent: December 17, 2024Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Chien-Te Tu, Hsin-Cheng Lin, Chee-Wee Liu
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Publication number: 20240404951Abstract: A method includes forming a semiconductor device over a front-side of a substrate, the semiconductor device comprising a channel region, a gate structure across the channel region, and source/drain regions on the channel region and at opposite sides of the gate structure; forming a first source/drain contact on a first one of the source/drain regions; forming a front-side interconnect structure over the first source/drain contact; forming a first dielectric through-silicon via extending through the substrate from a cross-sectional view, the first dielectric through-silicon via overlapping the first source/drain contact from a top view; forming a back-side interconnect structure over a back-side of the substrate, wherein the first dielectric through-silicon via has a back-side surface in contact with the back-side interconnect structure.Type: ApplicationFiled: June 1, 2023Publication date: December 5, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Chia-Che CHUNG, Chia-Jung TSEN, Chee-Wee LIU