Abstract: This invention provides a device for improving laser wavelength conversion efficiency and a laser system configured to provide high-power multi-wavelength femtosecond laser pulses using the device. The device for improving laser wavelength conversion efficiency comprises a wavelength conversion member photonic crystal fiber (PCF), wherein the device for improving laser wavelength conversion efficiency improves wavelength conversion efficiency by shortening the length of the PCF. The device provided in this invention not only reduces the attenuation and dispersion caused by the optical fiber, but also improves the energy conversion efficiency within a specific wavelength range. The use of the technique not only increases the energy of light pulse, but also greatly reduces the amount of fiber used, and can maximize the energy of the desired wavelength according to experimental requirements when using laser input sources of different wavelengths.

Abstract: The disclosure provides a method of and an imaging system for clinical sign detection. The method uses an imaging system having an RGB image sensor and the processing device disclosed herein. An image of a patient or examinee is captured by the RGB image sensor to generate an RGB image. Clinical signs of the patient or examinee are detected by the processing device based on the RGB images.

Abstract: A method includes forming a 2-D semiconductor material layer over a substrate; forming source/drain contacts over source/drain regions of the 2-D semiconductor material layer; and forming a gate structure over a channel region of the 2-D semiconductor material layer. Forming the source/drain contacts includes performing a first deposition process to deposit a first metal layer over the 2-D semiconductor material layer; and after the first deposition process is completed, performing a second deposition process to deposit a second metal layer over the first metal layer, in which the second metal layer has a higher melting point than the first metal layer.

Abstract: A method of preparing a triterpenoid compound of formula (I): including a step of converting a compound of formula (II) into the compound of formula (I), wherein R1 and R2 independently represent hydrogen or a protecting group selected from the group consisting of C1-C8 alkyl, allyl, C2-C8 alkenyl, C2-C8 alkynyl, (C6-C12)aryl(C1-C8)alkyl, tri(C1-C8)alkylsilyl, di(C1-C8)alkyl(C6-C12)arylsilyl, di(C6-C12)aryl(C1-C8)alkylsilyl ,tri(C6-C12)arylsilyl, —C(O)R7, and —C(O)OR8, and each of which is substituted with from 0 to 4 substituents independently selected from the group consisting of hydroxy, cyano, halo, halo(C1-C6)alkyl, halo(C1-C6)alkyloxy, (C1-C6)alkylthio, C1-C6 alkyl, C2-C6 alkenyl, C2-C6 alkynyl, C3-C7 cycloalkyl and C1-C6 alkoxy, wherein R7 and R8 are independently C1-C8 alkyl or C6-C12 aryl.

Abstract: A method for fabricating a package structure is provided. The method includes premixing cellulose nanofibrils (CNFs) and a two-dimensional (2D) material in a solvent to form a solution; removing the solvent from the solution to form a composite filler; mixing a prepolymeric material with the composite filler to form a composite material; and performing a molding process using the composite material.

Abstract: A semiconductor device includes a plurality of semiconductor layers arranged one above another, and source/drain epitaxial regions on opposite sides of the plurality of semiconductor layers. The semiconductor device further includes a gate structure surrounding each of the plurality of semiconductor layers. The gate structure includes interfacial layers respectively over the plurality of semiconductor layers, a high-k dielectric layer over the interfacial layers, and a gate metal over the high-k dielectric layer. The gate structure further includes gate spacers spacing apart the gate structure from the source/drain epitaxial regions. A top position of the high-k dielectric layer is lower than top positions of the gate spacers.

Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer, a spacer layer over the pinned layer, a reference layer over the spacer layer, and a tunnel barrier layer over the reference layer. The SOT layer has a top surface substantially coplanar with a top surface of the tunnel barrier layer of the memory stack. The free layer interconnects the SOT layer and the tunnel barrier layer.

Abstract: A device comprises a plurality of nanosheets, source/drain stressors, and a gate structure wrapping around the nanosheets. The nanosheets extend in a first direction above a semiconductor substrate and are arranged in a second direction substantially perpendicular to the first direction. The source/drain stressors are on either side of the nanosheets. Each of the source/drain stressors comprises a first epitaxial layer and a second epitaxial layer over the first epitaxial layer. The first and second epitaxial layers are made of a Group IV element and a Group V element. An atomic ratio of the Group V element to the Group IV element in the second epitaxial layer is greater than an atomic ratio of the Group V element to the Group IV element in the first epitaxial layer.

Abstract: The present disclosure provides a crosslinking agent, the preparation process and uses thereof, a hydrogel and a biodegradable cryogel including the crosslinking agent.

Abstract: A semiconductor device having a standard cell comprises a first bottom transistor, a first top transistor, a second bottom transistor, a second top transistor, and a first bottom-transistor-level metal line. The first bottom transistor is in a first row. The first top transistor is disposed above the first bottom transistor in the first row. The first bottom transistor and the first top transistor share a first gate structure. The second bottom transistor is in a second row next to the first row. The second top transistor is disposed above the second bottom transistor in the second row. The second bottom transistor and the second top transistor share a second gate structure. The first bottom-transistor-level metal line extends laterally from a first source/drain region of the first bottom transistor to a source/drain region of the second bottom transistor.

Abstract: A system and a method for measuring a void fraction of an inside of a heat conduction member are provided. The system is used to measure the heat conduction member and includes: a heating device configured as a heat source to heat an evaporation end of the heat conduction member; a cooling device configured for cooling a condensation end of the heat conduction member; at least one pair of electrode pads respectively attached to two opposite surfaces of the heat conduction member; and an LCR meter electrically connected to the at least one pair of the electrode pads for measuring impedances of the heat conduction member. Each of the impedances is converted into the void fraction that corresponds to a measured position of the heat conduction member.

Abstract: A method of generating randomness by public participation may comprise: communicating with the commodity devices to execute a protocol comprising a setup phase, a contribution phase and a result-generation phase, wherein: in the setup phase, parameters are initialized, a verifiable delay function is setup, and the parameters are published; the contribution phase is divided into at least one first stage, published parameters are provided, random values are received, and a Merkle tree root and Merkle tree audit paths are published in each of the first stage; and the result-generation phase is divided into at least one second stage of the same number as that of the first stage, each second stage is dedicated to one of the first stage ahead of the second stage for a period, and in each second stage, computation is performed to generate a result of randomness which is published.

Abstract: The present invention provides a supporting member and a supporting member assembly including the same to be implanted into or between a subject's bones, and a template plug and a tamper corresponding to the supporting member. The supporting member comprises a main body; a first connecting portion and a second connecting portion formed on the upper and lower sides of the main body respectively and forming a dovetail joint with each other; and a guiding structure formed at a side of the main body and including guiding holes as well as a buffer groove for mating with an external template plug. The supporting members of the invention can be sequentially implanted and connected into a bone or between two connected bones, and improve the defect of the conventional one-size giant implants injuring the surrounding nerves.

Abstract: A brain-computer interface device includes a plurality of pre-amplifiers are configured to amplify physiological signals corresponding to channels to output amplified signals; a multiplexer is configured to output, according to a control signal and a clock signal, the amplified signals; an analog-to-digital converter is configured to convert, according to the clock signal including clocks, the output of the multiplexer into a digital signal including a plurality of digital values corresponding to the clocks, wherein each of the digital values includes bit values; a memory is configured to store the digital signal; and a processor s configured to: add a header corresponding to one channel to each of the digital values according to the clock signal; and delete bit values of higher bits of each of the digital values corresponding to the same channel that are the same as those of a previous digital value, to output a compressed signal.

Abstract: A method of applying heat to living tissue mainly uses a device for performing heat treatment on at least a portion of the living tissue in high-low-high temperature steps. In high temperature step, the temperature of the at least a portion of the living tissue is heated and kept between 39-46° C., and the heating period is no longer than 30 minutes. In low temperature step, the at least a portion of the living tissue is cooled, and the low temperature period should not be greater than a natural cooling time interval. In addition, the low temperature period must also be shorter than the heating period. Thus, the present invention allows the abnormal cells to be selectively restored or apoptotic without damaging the normal cells.

Abstract: Gated MIS tunnel diode devices having a controllable negative transconductance behavior are provided. In some embodiments, a device includes a substrate, a tunnel diode dielectric layer on a surface of the substrate, and a gate dielectric layer on the surface of the substrate and adjacent to the tunnel diode dielectric layer. A tunnel diode electrode is disposed on the tunnel diode dielectric layer, and a gate electrode is disposed on the gate dielectric layer. A substrate electrode is disposed on the surface of the substrate, and the tunnel diode electrode is positioned between the gate electrode and the substrate electrode.

Abstract: A standing training mobile device for carrying a patient to perform active-assisted upright locomotion is provided. The standing training mobile device includes a base, a mobile module, a lifting module, a control module, and a support module. The mobile module and the lifting module are disposed on the base. The control module is disposed on the lifting module and is coupled to the mobile module. The control module includes a manipulation platform and two control assemblies disposed on the manipulation platform for use of the patient. The support module includes a support frame, a first support assembly, a second support assembly, and a third support assembly. The first support assembly, the second support assembly, and the third support assembly are slidably disposed on the support frame respectively. The second support assembly is disposed between the first support assembly and the third support assembly.

Abstract: A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.

Abstract: A method and a system of deep face recognition for a fisheye image are provided. The method includes determining a category corresponding to an input image, performing an image rectification according to the category corresponding to the input image to generate a restored image, and performing a face recognition on the restored image to determine an identity corresponding to the input image. The category correlates to a radial distance corresponding to the input image.

Abstract: A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.