Abstract: The present invention discloses a multi-level output signal converter, which is connected to an audio amplifier. The audio amplifier comprises a comparing/measuring device, an encoder and an output unit. The multi-level output signal converter comprises a timing processing unit and a multi-level converter. The timing processing unit is connected to the comparing/measuring device and the encoder. The timing processing unit includes a plurality of flip-flops and a timing summing element. The flip-flop receives a first signal from the comparing/measuring device and outputs the first signal to the timing summing element. The encoder converts the first signal into a second signal. The multi-level converter is connected to the encoder and the output unit. The encoder transmits the second signal to the multi-level converter, and the multi-level converter thus outputs a third signal to the output unit.

Abstract: A measurement device measuring a solution and including a reference voltage generating unit, a plurality of sensing units, a reading unit and a processing unit is disclosed. The reference voltage generating unit is disposed in the solution to generate a reference voltage. The sensing units are disposed in the solution to generate a plurality of output signals relating to the reference voltage. The reading unit outputs a reading signal according to one of the output signals. The processing unit generates a measuring signal according to the reading signals.

Abstract: A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.

Abstract: A method for testing a digital to analog converter, which operates in an undersampling environment, wherein signals of a tested DAC and a signal generator are modulated by a PWM device and then processed by a digital processing circuit to generate a digital signal, whereby is formed a low-speed equivalent ADC. The signal generator is provided by uniform-distribution random test patterns, and the signal generator generates an uniform-distribution random analog signal to the equivalent ADC. Thereby, the test error caused by the non-ideality of the signal generator is corrected, and the tested circuit can work in a full speed.

Abstract: The invention provides a method for forming a sodium ion selective electrode, including: (a) providing a conductive substrate; (b) forming a conductive wire which extends from the conductive substrate for external contact; and (c) forming a sodium ion sensing film on the conductive substrate, wherein the method for forming the conductive substrate includes: providing a substrate; and forming a conductive layer on the substrate.

Abstract: A novel method applies the down-conversion sampling technology to test a high-speed digital-to-analog conversion. In the method, a digital-to-analog conversion output signal of a high-speed digital-to-analog converter and a low-frequency sinusoidal carrier wave signal input to a comparator to obtain a low-speed pulse signal. Therefore, the variation of the pulse width of the low-speed pulse signal can be measured by a common logic analyzer to assess the nonlinearity error of the high-speed digital-to-analog converter.

Abstract: A multi-beam interferometer displacement measuring system has a light source module, a resonator module and a detecting device. The light source module has an emitter and a polaroid sheet. The emitter emits a non-polarizing beam. The polaroid sheet receives and transforms the non-polarizing beam into a polarizing beam. The resonator module receives the polarizing beam and has a coated glass panel, a corner cube prism and a wave-delay plate. The coated glass panel receives and reflects the polarizing beam. The corner cube prism receives and reflects the polarizing beam to the coated glass panel to form a resonant cavity. The wave-delay plate is mounted between the coated glass panel and the corner cube prism to receive the polarizing beam. The detecting device faces the coated glass panel to receive the interferential stripes formed in the resonator module and has a polarizing beam splitter, two power detectors and a signal processor.

Abstract: A low power pulse-triggered flip-flop comprises a latch containing a first conductive line and a first connection point and a pulse generator linking to the latch. The pulse generator includes a first N-transistor, a second N-transistor, a third N-transistor, a first inverter and a first P-transistor located on the first conductive line. The first N-transistor is connected to the first connection point and first conductive line. The second N-transistor and the third N-transistor are connected to the first conductive line, a second conductive line and a third conductive line. The first inverter is connected to the second conductive line. The present invention aims to reduce leakage power in a high level fabrication process, and can save power consumption and power-delay-product more than 17% over the conventional pulse triggered flip-flop, and also provides a smaller size of total transistors to lower average leakage current power consumption by 2.4 times.

Abstract: A high linearity voltage-current converter able to compensate for mobility degradation comprises a first constant current source circuit, a first current mirror unit, a second constant current source circuit, a second current mirror unit, a seventh MOS transistor and an eighth MOS transistor. The first current mirror unit is coupled to the first constant current source circuit, and the second current mirror unit is coupled to the second constant current source circuit. The seventh MOS transistor, the first current mirror unit and the second current mirror unit are coupled to each other at a third joint point of a first conducting wire. The eighth MOS transistor is coupled to the seventh MOS transistor. Thereby, the electronic components used in the present invention can operate more efficiently.

Abstract: A system of measuring pH of a solution having a calibration device to counteract time-drift effect. The calibration device of the system adjusts a compensation voltage to zero a measuring voltage of a first sensor and only respond to time-drift voltage of the first sensor. The calibration device has a differential operation amplifier receiving measuring voltages from the first sensor and a second sensor of the system to eliminate the time-drift voltages of the first and second sensors, thereby achieving calibration of the time-drift effects.

Abstract: A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.

Abstract: A reference pH sensor, the preparation and application thereof. The reference pH sensor is an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a solid-state conductive sensing layer on the substrate, and a polypyrrole layer on the solid-state conductive sensing layer, and a metal wire connecting the MOSFET and the sensing unit.

Abstract: A double-triggered logic circuit is a composite circuitry consisting of a plurality of PMOS, NMOS, inverters and a signal line. It includes an AND logic circuit and a XNOR logic circuit to generate an adjustable pulse mode to solve the problem of threshold voltage loss.

Abstract: A separative extended gate field effect transistor based vitamin C sensor includes: a substrate; a patterned conductive layer on the substrate, including a first electrode region array, at least two first contact regions, a second electrode region and a second contact region; a graphite-based paste layer on the first electrode region array; a ruthenium dioxide sensing layer on the graphite-based paste layer and electrically connected to the first contact region; a vitamin C enzyme layer on the ruthenium dioxide sensing layer; and a reference electrode on the second electrode region electrically connected to the second contact region.

Abstract: A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state.

Abstract: A reference pH sensor, the preparation and application thereof. The reference pH sensor is an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a solid-state conductive sensing layer on the substrate, and a polypyrrole layer on the solid-state conductive sensing layer, and a metal wire connecting the MOSFET and the sensing unit.

Abstract: In a full-adder of complementary carry logic voltage compensation, two input terminals of a first multiplexer are connected to a carry input and a carry inverted phase input respectively; an add signal is connected to a select signal; an input terminal of a first inverter is connected to an output signal of the first multiplexer. Two input terminals of a second multiplexer output an addend and a summand; an output signal of the first inverter is selected; an output terminal of the second multiplexer produces a carry signal; an input terminal of the second inverter is connected to an output signal of the second multiplexer for producing a carry inverted phase signal; two input terminals of a third multiplexer input the summand and carry inverted phase signal; an output signal of the first inverter is a select signal; and an output terminal of the third multiplexer produces a sum signal.

Abstract: A penicillin G biosensor, systems comprising the same, and measurement using the systems. The penicillin G biosensor has an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a tin oxide film on the substrate, and a penicillin G acylase film immobilized on the tin oxide film, and a conductive wire connecting the MOSFET and the sensing unit.

Abstract: A dye-sensitized solar cell includes a first electrode layer, a photosensitive dye layer, a second electrode layer, an energy-level intermediary layer, a first substrate and a second substrate. The photosensitive dye layer is used to receive sunlight and convert the sunlight to electrons and holes for being released. The first electrode layer is disposed on one side of the photosensitive dye layer to receive the electrons generated from the photosensitive dye layer. The second electrode layer is disposed on the other side of the photosensitive dye layer to receive the holes generated from the photosensitive dye layer. The energy-level intermediary layer is positioned between the first electrode layer and the photosensitive dye layer, so as to improve an injection efficiency of electrons and to prevent the generation of counter current, and thereby enhancing photoelectric conversion efficiency of the cell.

Abstract: A ruthenium oxide electrode. The ruthenium oxide electrode includes a substrate, a ruthenium oxide film formed thereon, and a conductive wire connecting to the ruthenium oxide film. The invention also provides a method of fabricating the ruthenium oxide electrode.