Patents Assigned to National Yunlin University of Science and Technology
  • Method and apparatus for measuring hysteresis and drift values of an isfet using the hydrogenated amorphous silicon as a sensing film
    Publication number: 20020033705
    Abstract: A method of measuring the hysteresis value and the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solution; (3) recording the gate/source output voltage of the a-Si:H ISFET by using a voltage-time recorder; and (4) exchanging the pH value of the buffer solution and then repeating the steps of (1)˜(3).
    Type: Application
    Filed: February 9, 2001
    Publication date: March 21, 2002
    Applicant: National Yunlin University of Science and Technology
    Inventors: Jung Chuan Chou, Hsuan Ming Tsai
  • Method and apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous silicon as a sensing film
    Publication number: 20020030503
    Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.
    Type: Application
    Filed: January 24, 2001
    Publication date: March 14, 2002
    Applicant: National Yunlin University of Science and Technology
    Inventors: Jung Chuan Chou, Yii Fang Wang