Abstract: A memory control circuit includes a conversion circuit performing a conversion processing for parallel readout bit data formed from individual bits read out from memory cells of a nonvolatile memory, by setting the individual bit that is once again read out from the memory cell, which is previously determined to be successfully storing an expectation value, to a corresponding expectation value expected to be stored in the memory cell, and a determination circuit determining a result of a write processing to write parallel expectation value data to the nonvolatile memory, based on the parallel readout bit data converted by the conversion circuit and the parallel expectation value data.

Abstract: Conventional semiconductor memory devices have a problem of a data read failure caused by a leak current. To address this problem, a semiconductor memory device of the present invention including memory cells each formed of a transfer transistor, a load transistor and a drive transistor. Each of the memory cells includes: a first transfer transistor connected to a connection point of the drive transistor and the load transistor; a second transfer transistor connected between the first transfer transistor and a bit line DB; and a compensation transistor connected between a constant voltage node and a connection point of the first transfer transistor and the second transfer transistor. The compensation transistor is switched to a conductive state exclusively from at least one of the first transfer transistor and the second transfer transistor.

Abstract: [PROBLEMS] To reduce the number of recording condition adjustment steps before information recording, simplify the recording condition adjustment procedure, and perform stable and accurate recoding condition adjustment of an information recording medium. [MEANS FOR SOLVING PROBLEMS] When recording information on a recording medium, the recording condition is optimized. Next, under the optimized recording condition, a signal is recorded in a prescribed area of the information recording medium. Next, by using the signal recorded under the optimized recording condition, a part of the recording condition for the next and later is adjusted. Thus, a part of the recording condition is adjusted by using the signal recorded under the optimized recording condition and accordingly, it is possible to rapidly perform the recording condition adjustment before information recording.

Abstract: A LCD device prevents corrosion of the transparent conductive layers and contact resistance increase without arising the step coverage degradation due to the thickness increase of the interconnection layer, the step coverage degradation due to the formation of undercut portions, and productivity reduction and fabrication cost increase. A first interconnection line comprising a patterned Al or Al alloy layer is disposed on or over an insulating plate. A first insulating layer is formed to cover the first interconnection line to have a contact hole exposing a part of the first interconnection line. A first conductive material made of a plated metal is in contact with the exposed part of the first interconnection line in the contact hole. A first transparent conductive layer is in contact with the first conductive material. The first transparent conductive layer is electrically connected to the first interconnection line by way of the first conductive material.

Abstract: In a portable electronic device with camera, a radio wave detection circuit detects specific radio waves, and when the radio wave detection circuit detects the specific radio waves, a control circuit prohibits close-up photography by a camera.

Abstract: The present invention provides a semiconductor device comprising a capacitive element with a very uniform capacitive value as well as a method of manufacturing the semiconductor device. In a capacitive element formation region 20 of a semiconductor device 1, an N-type well 22 as a conductive layer is formed in a surface layer of a P-type semiconductor substrate 10. A capacitive film 24 is deposited on a front surface of the semiconductor substrate 10 on which the N-type well 22 is formed. The part of front surface of the semiconductor substrate 10 in which the capacitive film 24 is deposited is substantially flat. An upper electrode 26 is provided on the capacitive film 24. The upper electrode 26 constitutes a capacitive element (on-chip capacitor) together with the N-type well 22, located opposite the upper electrode 26 across the capacitive film 24.

Abstract: A vehicle load control system, in which information on the cargo loading condition of a moving vehicle is obtained through communication between the moving vehicle and a control center via a communication network to provide centralized control of efficient cargo loading operation. A vehicle load control system provides centralized control of efficient cargo loading operation through communication between a moving vehicle (100) and a control center (120) via a communication network (110). The moving vehicle (100) includes a radio section (101) for receiving a load data acquisition request signal and transmitting measured load data determined by at least one distance sensor (105) in the luggage compartment and location data of the vehicle.

Abstract: A film covered battery has a battery element, a casing for sealing the battery element, and lead terminals connected to a positive electrode and a negative electrode, respectively, of the battery element, and extending from the casing. The casing is flexible, and is comprised of two halves for sealably sandwiching the battery element on both sides in the thickness direction thereof. One of the halves of the casing, sandwiching the battery element, is formed with a recess for receiving the battery element. The lead terminals are each connected to the battery element at a position inside of both surfaces of the battery element in the thickness direction.

Abstract: An optical recording medium has a substrate, and a recording film whose status is changed by irradiating with a laser beam. The recording film includes (?Te)x?Te3 as a major component (x is a positive real number). The ? is selected from the group consisting of Ge1-aSna and Ge1-aPba (a is a real number not less than 0 and not more than 1). The ? is selected from the group consisting of Sb2-yIny, Sb2-y-zInyBiz and Bi2-yIny (y and z are real numbers more than 0 and less than 2; y+z is more than 0 and less than 2).

Abstract: The present invention is to provide a mobile radio communications method, a mobile radio communications system, base station controlling equipment and a mobile radio terminal device, all of which make it possible to realize reduction of power consumption of the mobile radio terminal device even in the case where the remaining battery capacity of the mobile radio terminal device has become short while the mobile radio terminal device is performing high-speed and large-amount data transmission. In the present invention, the mobile radio terminal device detects the remaining battery capacity, and this information is transmitted to the base station controlling equipment.

Abstract: A foldable portable information terminal includes an upper unit having a display unit on its one side, a lower unit having operation keys on its one side, and a movable connecting mechanism connecting the upper unit and the lower unit allowing the upper unit to be opened, closed, and freely rotated with respect to a longitudinal direction of the lower unit. The displaying mode of the display unit whose direction varies depending on a position of the upper unit is changed depending on a positional relationship of the upper unit and the lower unit.

Abstract: A resist post is formed on a connection pad of a semiconductor chip, and the semiconductor chip and the resist post are covered by a heat resistant insulating layer. A surface of the insulating layer is next polished by CMP or the like, thus an upper surface of the resist post being exposed. The exposed resist post is then removed by developing processing or the like, thus forming a through hole. A conductor is then embedded in the through hole by plating, thus forming a connecting conductor, and wirings are formed. A method of forming the connecting conductor does not impart damage to the semiconductor chip.

Abstract: A planar light source includes a large variable width of an irradiation angle of illumination light, a display device having a large variable width of an angle of field that uses the planar light source, a portable terminal device that uses the display device, and a ray direction switching element that is incorporated in the planar light source. A beam direction regulating element (a louver), which controls a direction of light, and a transparent and scattering switching element, which can switch the transparent state and the scattering state according to ON and OFF of an applied voltage, are provided between a backlight and a liquid crystal panel, whereby it is possible to increase a variable width of an irradiation angle of light in the planar light source and increase a variable width of an angle of field of the liquid crystal display device that uses the planar light source.

Abstract: A power-ON-clear circuit has a reset period when the power supply stops temporarily (or instantaneously) and then that power supply is restored. The power-ON-clear circuit 30 of a semiconductor integrated circuit 200 comprises: a capacitor C31 of which one end is connected to the external power-supply voltage Vcc1; an N-channel MOS transistor Q31 of which the drain is connected to the other end of the capacitor C31, the source is connected to the ground potential, and the gate is connected to the external power-supply voltage by way of a resistor R31; and an inverter INV31 that is connected to the connecting point between the capacitor C31 and MOS transistor Q31 in a stage connection, and is connected to the power supply between the internal power-supply voltage Vcc2 and the ground potential.

Abstract: In a mobile station, a casing has a sound hole formed in a front wall portion thereof, and an inner frame is contained in the casing. A sound duct is integrally formed with the inner frame, and a wiring board is contained in the casing and arranged In the vicinity of a bottom wall portion of the casing. A sound speaker is mounted on a top surface of the wiring board such that a sound emitting face of the sound speaker is directed to the front wall portion of the casing. The sound emitting face of the sound speaker is connected to the sound hole through the sound duct so that a sound is guided from the sound speaker to the sound hole.

Abstract: A sliding window turbo decoder is provided which is capable of reducing large amounts of arithmetic calculations required for decoding and of achieving decoding processing that can reduce power consumption. An input code block is divided into a plurality of windows on which forward and backward processing is performed to realize a plurality of times of iterated decoding. At every time of iterated decoding, CRC (Cyclic Redundancy Check) is made by the CRC processing section and, according to the CRC processing result, a training size (length) for training processing on an initial value to be used in path metric calculations in a backward direction in a subsequent decoding is adjusted and controlled and, if the result is good, decoding is stopped. Power consumption is reduced while decoding capability is maintained.

Abstract: A semiconductor device includes a seal ring formed on an outer circumference of an element forming region when seen from the top in a multilayer interconnect structure formed on a silicon layer, and dummy metal structures formed on a further outer circumference of the seal ring. The more inner circumference side the dummy interconnect is formed on, the more upper layer the dummy interconnect is arranged on.

Abstract: Disclosed is an apparatus for performing automatic routing of a semiconductor integrated circuit, including an automatic routing and search processing unit for outputting post-routing layout data upon receiving inputs of post-routing layout data, circuit data and differential-signal information.

Abstract: A fault-tolerant computer has a pair of duplex systems having respective CPU subsystems that are operable identically in lock-step synchronism. Each of the duplex systems has a CPU, a main storage unit, a CPU bus controller, and a DMA controller. The CPU and the main storage unit are included in each of the CPU subsystems. The CPU bus controller continuously operates the CPU of its own system even if it detects an asynchronous operation while the CPU subsystems are operating in synchronism with each other. Even if the asynchronous operation is detected, the DMA controller holds a DMA transfer process for transferring data stored in the main storage unit of its own system or the other system to the main storage unit of the other system or its own system after the asynchronous operation is detected until a certain time is reached.

Abstract: A pen-input unit and a display unit of a mobile terminal apparatus are individually provided so that the display unit can be used only for display, thereby effectively reducing the power consumption of the pen-input unit. The operation panel of the mobile terminal apparatus includes a display unit for displaying a standby screen, a screen displaying the status of call-outgoing/incoming or telephone conversation, a mail-transmission/reception screen, etc. and a pen-input unit having an input panel into which hand-written pen-input is performed and a liquid crystal display unit for displaying a guide display, etc. for input in the input panel. A control unit and ROM start powering the pen-input unit when the display unit enters a display status requesting to perform inputting operation by the pen-input unit, and stop powering the pen-input unit when the display unit enters a display status not requesting to perform an inputting operation by the pen-input unit.