Abstract: A DRAM packages comprises stacked DRAM dies including first DRAM dies and second DRAM dies, first C/A interconnects and first data interconnects configured to conduct C/A signals and data signals to/from the first DRAM dies but not to/from any of the second DRAM dies, and second C/A interconnects and second data interconnects configured to conduct C/A signals and data signals to/from the second DRAM dies but not to/from any of the first DRAM dies. The DRAM package further comprises first drivers and second drivers. The first drivers are configurable to drive data signals to the first DRAM dies via the first data interconnects concurrently with the second drivers driving data signals to the second plurality of DRAM dies via the second data interconnects. Each of the first drivers has a drive strength different from that of any of the second drivers.

Abstract: A memory expansion device operable with a host computer system (host) comprises a non-volatile memory (NVM) subsystem, cache memory, and control logic configurable to receive a submission from the host including a read command and specifying a payload in the NVM subsystem and demand data in the payload. The control logic is configured to request ownership of a set of cache lines corresponding to the payload, to indicate completion of the submission after acquiring ownership of the cache lines, and to load the payload to the cache memory. The set of cache lines correspond to a set of cache lines in a coherent destination memory space accessible by the host. The control logic is further configured to, after indicating completion of the submission and in response to a request from the host to read demand data in the payload, return the demand data after determining that the demand data is in the cache memory.

Abstract: In certain embodiments, a memory module includes a printed circuit board (PCB) having an interface that couples it to a host system for provision of power, data, address and control signals. First, second, and third buck converters receive a pre-regulated input voltage and produce first, second and third regulated voltages. A converter circuit reduces the pre-regulated input voltage to provide a fourth regulated voltage. Synchronous dynamic random access memory (SDRAM) devices are coupled to one or more regulated voltages of the first, second, third and fourth regulated voltages, and a voltage monitor circuit monitors an input voltage and produces a signal in response to the input voltage having a voltage amplitude that is greater than a threshold voltage.

Abstract: A memory module comprises dynamic random access memory (DRAM), Flash memory, and a module controller. The module controller is configured to receive data to be transferred from the DRAM to the Flash memory, compute first cyclic redundancy check (CRC) codes for the data, and write the data into the Flash memory. The module controller is further configured to read the data from the Flash memory, compute second CRC codes for the data read from the Flash memory, and transfer the data to the DRAM. The module controller is further configured to compare the second CRC codes with the first CRC codes to determine one or more erroneous data bits in the data read from the Flash memory, read a data segment of the data from the DRAM that include the one or more erroneous data bits, correct the one or more erroneous data bits in the data segment, and write the data segment back into the DRAM.

Abstract: A storage device. In some embodiments the storage device includes a storage controller; a nonvolatile memory device connected to the storage controller through a first physical interface, and a processing circuit. The processing circuit may be connected, through a second physical interface, to the storage controller or to the nonvolatile memory device, the second physical interface being the same as the first physical interface.

Abstract: A memory module comprises memory devices, a data module and a control module. The memory module is operable in a first mode in which at least some of the memory devices are accessed by a system memory controller in a computer system for memory read and/or write operations at a memory access speed, the control module is configured to register address and control signals associated with the memory read and/or write operations, and the data module is configured to propagate data signals between the at least some of the memory devices and the memory controller. The memory module is further operable in a second mode in which the memory devices are not accessed by the system memory controller for memory read or write operations, and the data module is configured to communicate data signals with at least some of the memory devices at the memory access speed.

Abstract: In certain embodiments, a memory module includes a printed circuit board (PCB) having an interface that couples it to a host system for provision of power, data, address and control signals. First, second, and third buck converters receive a pre-regulated input voltage and produce first, second and third regulated voltages. A converter circuit reduces the pre-regulated input voltage to provide a fourth regulated voltage. Synchronous dynamic random access memory (SDRAM) devices are coupled to one or more regulated voltages of the first, second, third and fourth regulated voltages, and a voltage monitor circuit monitors an input voltage and produces a signal in response to the input voltage having a voltage amplitude that is greater than a threshold voltage.

Abstract: A node in a network including a plurality of nodes comprises persistent memory; non-persistent memory, a node control device operatively coupled to the persistent memory and the non-persistent memory, a local interface for interfacing with the local server in the UMA node, and a network interface for interfacing with other nodes. The node control device is configured to translate between a local unified memory access (UMA) address space accessible by applications running on a local server and a global UMA address space that is mapped to a physical UMA address space. The physical UMA address space includes physical address spaces associated with different UMA nodes in the cluster of UMA nodes. Thus, a server in the UMA network can access the physical address spaces at other UMA nodes without going through the servers in the other UMA nodes.

Abstract: In certain embodiments, a memory module includes a printed circuit board (PCB) having an interface that couples it to a host system for provision of power, data, address and control signals. First, second, and third buck converters receive a pre-regulated input voltage and produce first, second and third regulated voltages. A converter circuit reduces the pre-regulated input voltage to provide a fourth regulated voltage. Synchronous dynamic random access memory (SDRAM) devices are coupled to one or more regulated voltages of the first, second, third and fourth regulated voltages, and a voltage monitor circuit monitors an input voltage and produces a signal in response to the input voltage having a voltage amplitude that is greater than a threshold voltage.

Abstract: A storage device. In some embodiments the storage device includes a storage controller; a nonvolatile memory device connected to the storage controller through a first physical interface, and a processing circuit. The processing circuit may be connected, through a second physical interface, to the storage controller or to the nonvolatile memory device, the second physical interface being the same as the first physical interface.

Abstract: A memory system that has a multi-channel volatile memory subsystem is coupled to a non-volatile memory subsystem to provide independent, configurable backup of data. The volatile memory subsystem has one or more main memory modules that use a form of volatile memory such as DRAM memory, for which the NV subsystem provides selective persistent backup. The main memory modules are dual in-line memory modules or DIMMs using DDR SDRAM memory devices. The non-volatile memory subsystem (NV backup) includes an NV controller and non-volatile memory NVM. The NV backup can also include a memory cache to aid with handling and storage of data. In certain embodiments, the NV controller and the nonvolatile memory are coupled to the one or more DIMM channels of the main memory via associated signal lines. Such signal lines can be, for example, traces on a motherboard, and may include one or more signal buses for conveying data, address, and/or control signals.

Abstract: A memory module operable to communicate data with a memory controller via a memory bus. The memory module comprises memory devices and logic configurable to receive and register a set of input address and control signals associated with a read or write memory command and to output data transfer control signals. The memory module further comprises circuitry coupled between the memory bus and the memory devices. The circuitry is configurable to be in any of a plurality of states including a first state and a second state, and to transition from the first state to the second state in response to the data transfer control signals. The circuitry in the first state is configured to disable signal communication through the circuitry. The circuitry in the second state is configured to transfer the data signals associated with the read or write command in accordance with a transfer time budget of the memory module.

Abstract: A system can include a host computer system and a host system bus coupled to the host computer system. One or more storage devices can be coupled to the host system bus and configured to store data. Additionally, a computational storage device (CSD) can be coupled to the host system bus and configured to receive a data write request comprising data from the host computer system. The CSD can further include a memory and an application processor. The application processor of the CSD can be configured to write the data of the data write request to the one or more storage devices in response to receiving the data write request.

Abstract: A system and method for configuring fault tolerance in nonvolatile memory (NVM) are operative to set a first threshold value, declare one or more portions of NVM invalid based on an error criterion, track the number of declared invalid NVM portions, determine if the tracked number exceeds the first threshold value, and if the tracked number exceeds the first threshold value, perform one or more remediation actions, such as issue a warning or prevent backup of volatile memory data in a hybrid memory system. In the event of backup failure, an extent of the backup can still be assessed by determining the amount of erased NVM that has remained erased after the backup, or by comparing a predicted backup end point with an actual endpoint.

Abstract: A memory module is operable in a computer system having a memory controller and a system bus and comprises memory devices organized in one or more ranks and in a plurality of groups, and circuits configurable to receive from the memory controller a system clock and input control and address (C/A) signals, and output registered C/A signals and buffer control signals. The memory module further comprises a plurality of buffer circuits. In response to the buffer control signals, each buffer circuit is configured to communicate first data/strobe signals with at least one memory device and to communicate second data/strobe signals with the memory controller. The buffer circuit includes at least one delay circuit configured to delay at least one signal of the first data/strobe signals based on a first delay and a second delay.

Abstract: A memory expansion device operable with a host computer system (host) comprises a non-volatile memory (NVM) subsystem, cache memory, and control logic configurable to receive a submission from the host including a read command and specifying a payload in the NVM subsystem and demand data in the payload. The control logic is configured to request ownership of a set of cache lines corresponding to the payload, to indicate completion of the submission after acquiring ownership of the cache lines, and to load the payload to the cache memory. The set of cache lines correspond to a set of cache lines in a coherent destination memory space accessible by the host. The control logic is further configured to, after indicating completion of the submission and in response to a request from the host to read demand data in the payload, return the demand data after determining that the demand data is in the cache memory.

Abstract: A memory subsystem is operable with a memory controller of a host computer system via an interface. The memory subsystem comprises dynamic random access memory elements and a memory subsystem controller. The memory subsystem controller has an open drain output, and is configured to provide a first signaling interface via the open drain output during normal operations and a second signaling interface via the open drain output during an initialization operation. The second signaling interface is distinct from the first signaling interface and the initialization operation is distinct from any of the normal operations. The first signaling interface is used by the memory subsystem controller to indicate a parity error in response to a parity error having occurred during the normal operations. The second signaling interface is used by the memory subsystem controller to output a signal related to initialization operation sequences during the initialization operation.

Abstract: A memory module according to some embodiments is operable in a computer system including a memory controller coupled to a memory channel. The memory module comprises a volatile memory subsystem, non-volatile (NV) memory subsystem and a module controller coupled to the volatile memory subsystem and the NV memory subsystem. The volatile memory subsystem includes dynamic random access memory (DRAM) devices and is configurable to communicate with the memory controller via the memory channel during memory read or write operations. The module controller is configured to output data strobe signals to accompany data from the volatile memory subsystem during a memory read operation and to output to accompany data strobes output by data buffers in response to data strobe signals from the memory controller during a system-initiated operation to transfer data from the NV memory subsystem to the volatile memory subsystem.

Abstract: A memory module comprises dynamic random access memory (DRAM) devices arranged in ranks, and a module controller configurable to receive address and control signals for a memory operation, and to output first module control signals to the DRAM devices, causing a selected rank to output or receive N-bit-wide data. The module controller is further configurable to output second module control signals to a plurality of data buffers coupled to the DRAM devices via module data lines. Each respective data buffer includes a n-bit-wide (n<N) data path and logic configurable to, in response to the second module control signals, enable the n-bit-wide data path to receive and regenerate signals carrying a respective n-bit-wide section of the N-bit-wide data communicated from/to a respective n-bit-wide section of the module data lines. The logic is further configurable to disable the n-bit-wide data path when the memory module is not being accessed for data.

Abstract: A system and method for configuring fault tolerance in nonvolatile memory (NVM) are operative to set a first threshold value, declare one or more portions of NVM invalid based on an error criterion, track the number of declared invalid NVM portions, determine if the tracked number exceeds the first threshold value, and if the tracked number exceeds the first threshold value, perform one or more remediation actions, such as issue a warning or prevent backup of volatile memory data in a hybrid memory system. In the event of backup failure, an extent of the backup can still be assessed by determining the amount of erased NVM that has remained erased after the backup, or by comparing a predicted backup end point with an actual endpoint.