Abstract: A memory module is operable in a memory system with a memory controller. The memory module comprises memory devices, a module control circuit, and a plurality of buffer circuits coupled between respective sets of data/strobe signal lines in a data bus and respective sets of the memory devices. Each respective buffer circuit includes a data path corresponding to each data signal line in the corresponding set of data/strobe signal lines, and a command processing circuit configured to decode module control signals from the module control circuit and to control the data path in accordance with the module control signals. The data path corresponding to the each data signal line includes at least one tristate buffer controlled by the command processing circuit and a delay circuit configured to delay a signal through the data path by an amount determined by the command processing circuit in response to at least one of the module control signals.

Abstract: A computer system comprises a processor, a memory module and input/output devices. The memory module includes a circuit board, a volatile memory unit mounted on the circuit board, a non-volatile memory unit mounted on the circuit board and a control circuit mounted on the circuit board. The volatile memory unit comprises DRAM devices, and the non-volatile memory unit comprises flash memory. The processor is configured to execute an operating system (OS) and an application program and to present a memory address space to the application program. The memory address space including a memory mapped input/output (MMIO) space mapped to the I/O devices, a pseudo MMIO (PMMIO) space mapped to the non-volatile memory unit, and a DRAM space mapped to the volatile memory unit, the PMMIO space including a system main memory local storage (MMLS) area and a memory channel storage area, wherein the DRAM space is partitioned into memory pages, and the MCS space is partitioned into storage blocks.

Abstract: A memory system that has a multi-channel volatile memory subsystem is coupled to a non-volatile memory subsystem to provide independent, configurable backup of data. The volatile memory subsystem has one or more main memory modules that use a form of volatile memory such as DRAM memory, for which the NV subsystem provides selective persistent backup. The main memory modules are dual in-line memory modules or DIMMs using DDR SDRAM memory devices. The non-volatile memory subsystem (NV backup) includes an NV controller and non-volatile memory NVM. The NV backup can also include a memory cache to aid with handling and storage of data. In certain embodiments, the NV controller and the non-volatile memory are coupled to the one or more DIMM channels of the main memory via associated signal lines. Such signal lines can be, for example, traces on a motherboard, and may include one or more signal buses for conveying data, address, and/or control signals.

Abstract: A memory subsystem is operable with a system memory controller. The memory subsystem comprises memory devices mounted on a circuit board, a data module mounted on the circuit board; and a control module mounted on the circuit board to provide address and control signals to the memory devices. The memory subsystem is operable in any of a plurality of modes including a normal mode and a test mode. During the normal mode, the control module provides the address and control signals based on address and control signals from the system memory controller, and the data module enables data paths between the memory devices and the system memory controller. During the test mode, the control module generates the address and control signals, and the data module isolates the memory devices from the system memory controller.

Abstract: A memory module comprises a volatile memory subsystem configured to coupled to a memory channel in computer system and capable of serving as main memory for the computer system, a non-volatile memory subsystem providing storage for the computer system, and a module controller coupled to the volatile memory subsystem, the non-volatile memory subsystem, and the C/A bus. The module controller reads first data from the non-volatile memory subsystem in response to a Flash access request received via the memory channel, and causes at least a portion of the first data to be written into the volatile memory subsystem in response to a dummy write memory command received via the C/A bus. The module control device includes status registers accessible by the computer system via the memory bus.

Abstract: A memory module that is couplable to a memory controller hub (MCH) of a host system includes a non-volatile memory subsystem, a data manager coupled to the non-volatile memory subsystem, a volatile memory subsystem coupled to the data manager and operable to exchange data with the non-volatile memory subsystem by way of the data manager, and a controller operable to receive read/write commands from the MCH and to direct transfer of data between any two or more of the MCH, the volatile memory subsystem, and the non-volatile memory subsystem based on the commands.

Abstract: Certain embodiments described herein include a memory module having a printed circuit board including at least one connector configured to be operatively coupled to a memory controller of a computer system. The memory module further includes a plurality of memory devices on the printed circuit board and a circuit including a first set of ports operatively coupled to at least one memory device. The circuit further includes a second set of ports operatively coupled to the at least one connector. The circuit includes a switching circuit configured to selectively operatively couple one or more ports of the second set of ports to one or more ports of the first set of ports. Each port of the first set and the second set comprises a correction circuit which reduces noise in one or more signals transmitted between the first set of ports and the second set of ports.

Abstract: A memory system that has a multi-channel volatile memory subsystem is coupled to a non-volatile memory subsystem to provide independent, configurable backup of data. The volatile memory subsystem has one or more main memory modules that use a form of volatile memory such as DRAM memory, for which the NV subsystem provides selective persistent backup. The main memory modules are dual in-line memory modules or DIMMs using DDR SDRAM memory devices. The non-volatile memory subsystem (NV backup) includes an NV controller and non-volatile memory NVM. The NV backup can also include a memory cache to aid with handling and storage of data. In certain embodiments, the NV controller and the non-volatile memory are coupled to the one or more DIMM channels of the main memory via associated signal lines. Such signal lines can be, for example, traces on a motherboard, and may include one or more signal buses for conveying data, address, and/or control signals.

Abstract: A memory module that is couplable to a memory controller hub (MCH) of a host system includes a non-volatile memory subsystem, a data manager coupled to the non-volatile memory subsystem, a volatile memory subsystem coupled to the data manager and operable to exchange data with the non-volatile memory subsystem by way of the data manager, and a controller operable to receive read/write commands from the MCH and to direct transfer of data between any two or more of the MCH, the volatile memory subsystem, and the non-volatile memory subsystem based on the commands.

Abstract: Data stored in a volatile memory subsystem is backed up redundantly into first and second channels of a non-volatile memory subsystem. The data is retrieved from the volatile memory subsystem upon detection of a trigger condition indicative of real or imminent power loss or reduction and multiple copies are stored in dedicated non-volatile memory channels. The stored copies may be error checked and corrected, and re-written if necessary. The redundantly backed up data can be subsequently retrieved from the non-volatile memory subsystem, error-corrected, and an error-free copy communicated to the volatile memory subsystem.

Abstract: According to certain aspects, a memory module is coupled to a memory controller of a host computer system via an interface. The interface includes data, address and control signal pins and an output pin in addition to the data, address and control signal pins. The memory module receives a first command from the memory controller via the address and control signal pins, and enters a first mode in response to the first command. The memory module in the first mode responds to at least one initialization sequence, and sends a first output signal via the output pin to indicate a status of the at least one initialization sequence to the memory controller. The memory module enters a second mode in which the memory module performs memory operations including memory read/write operations according to an industry standard.

Abstract: A memory module is operable to communicate data with a memory controller via a memory bus in response to memory commands received from the memory controller. The memory module comprises a plurality of memory integrated circuits arranged in ranks and including at least one first memory integrated circuit in a first rank and at least one second memory integrated circuit in a second rank, and further comprises a buffer coupled between the at least one first memory integrated circuit and the memory bus and between the at least one second memory integrated circuit and the memory bus.

Abstract: Certain embodiments described herein include a memory module having a printed circuit board including at least one connector configured to be operatively coupled to a memory controller of a computer system. The memory module further includes a plurality of memory devices on the printed circuit board and a circuit including a first set of ports operatively coupled to at least one memory device. The circuit further includes a second set of ports operatively coupled to the at least one connector. The circuit includes a switching circuit configured to selectively operatively couple one or more ports of the second set of ports to one or more ports of the first set of ports. Each port of the first set and the second set comprises a correction circuit which reduces noise in one or more signals transmitted between the first set of ports and the second set of ports.

Abstract: A memory module is operatable in a memory system with a memory controller. The memory module comprises a module control device mounted on the module board to receive command signals from the memory controller and to output module command signals and module control signals, and memory devices mounted on the module board to perform a first memory operation in response to the module command signals. The memory module further comprises a plurality of buffer circuits distributed across a surface of the module board. Each respective buffer circuit is associated with a respective set of the memory devices and includes logic that is configured to obtain timing information based on signals received by the each respective buffer circuit during a second memory operation prior to the first memory operation and to control timing of the data and strobe signals through the each respective buffer circuit in accordance with the timing information.

Abstract: An apparatus is provided that includes a plurality of array dies and at least two die interconnects. The first die interconnect is in electrical communication with a data port of a first array die and a data port of a second array die and not in electrical communication with data ports of a third array die. The second die interconnect is in electrical communication with a data port of the third array die and not in electrical communication with data ports of the first array die and the second array die. The apparatus includes a control die that includes a first data conduit configured to transmit a data signal to the first die interconnect and not to the second die interconnect, and at least a second data conduit configured to transmit the data signal to the second die interconnect and not to the first die interconnect.

Abstract: A memory module is operable to communicate with a memory controller via a data bus and a control/address bus and comprises a module board; a plurality of memory devices mounted on the module board; and multiple sets of data pins along an edge of the module board. Each respective set of the multiple sets of data pins is operatively coupled to a respective set of multiple sets of data lines in the data bus. The memory module further comprises a control circuit configured to receive control/address information from the memory controller via the control/address bus and to produce module control signals. The memory module further comprises a plurality of buffer circuits each being disposed proximate to and electrically coupled to a respective set of the multiple sets of data pins.

Abstract: A memory module is operatable in a memory system with a memory controller. The memory module comprises a module control device to receive command signals from the memory controller and to output module command signals and module control signals. The module command signals are provided to memory devices organized in groups, each group including at least one memory device, while the module control signals are provided to a plurality of buffer circuits to control data paths in the buffer circuits. The plurality of buffer circuits are associated with respective groups of memory devices and are distributed across a surface of the memory module such that each module control signal arrives at the plurality of buffer circuits at different points in time.

Abstract: A memory module is operable with a memory controller of a host computer system. The memory module includes a module controller having an open drain output. The module controller generates a parity error signal and drives the parity error signal to the memory controller of the host system via the open drain output while the memory module operates in a first mode, the parity error signal indicating a parity error having occurred in the memory module while the memory module operates in the first mode. The module controller is configured to cause the memory module to enter a second mode in response to a command from the memory controller of the host system. The module controller generates a notification signal indicating at least one status of one or more training sequences while the memory module is in the second mode and outputs the notification signal to the memory controller of the host system via the open drain output while the memory module is in the second mode.

Abstract: A multi-rank memory module is operable in a memory system with a memory controller. The memory module according to one embodiment comprises at least one module board, memory devices organized in three ranks, and at least one register device providing control/address signals to the memory devices. Arrangement of the ranks on the at least one module board are made to balance memory device loadings on the C/A signals, and data/strobe signal hubs are designed to provide better alignment of different data bits in a data signal and to reduce reflection from discrete components disposed near an edge of the module board, resulting in improved signal quality and integrity.

Abstract: An apparatus is provided that includes a plurality of array dies and at least two die interconnects. The first die interconnect is in electrical communication with a data port of a first array die and a data port of a second array die and not in electrical communication with data ports of a third array die. The second die interconnect is in electrical communication with a data port of the third array die and not in electrical communication with data ports of the first array die and the second array die. The apparatus includes a control die that includes a first data conduit configured to transmit a data signal to the first die interconnect and not to the second die interconnect, and at least a second data conduit configured to transmit the data signal to the second die interconnect and not to the first die interconnect.