Abstract: This disclosure relates to an adhesive dispense unit for a semiconductor die bonding apparatus. The adhesive dispense unit includes an adhesive dispense nozzle and a pin member; the pin member comprising a down stand portion and a sheath portion, and the down stand is reciprocatable within the sheath portion.

Abstract: Aspects of the present disclosure relate to a semiconductor power device, in particular to a Silicon Carbide, SiC, Merged P-I-N Schottky (MPS) diode. The device includes an active area and a termination area adjacent the active area. The termination area includes first rings having a first polarity. By including second rings having a second polarity opposite to the first polarity, a reduced effect of interface charges on the performance of the semiconductor power device can be observed.

Abstract: Aspects of the present disclosure relate to a pick-and-place apparatus that is configured to cause components to be placed on a substrate in a number of passes, and during each pass, components among a plurality of components are placed on the substrate in a respective placement pattern among a collection of interleaved placement patterns.

Abstract: An electrostatic discharge protection device is provided. In particular, the present disclosure relates to a semiconductor device that is particularly useful for ESD protection purposes. The semiconductor device further includes a second electronic component integrated on the semiconductor body and being spaced apart from the first electronic component, the second electronic component includes a first secondary region of the first charge type and a second secondary region of the second charge type arranged adjacent to the first secondary region, and the second secondary region is electrically connected to the second device terminal; and a first capacitive element, a first terminal thereof being electrically connected to the second primary region, and a second terminal thereof being electrically connected to the first secondary region.

Abstract: A semiconductor device is provided that includes a lead frame, a die attached to the lead frame using a first solder, a clip attached to the die using a second solder, and a copper slug attached to the clip. First gull wing leads are attached to the leadframe for a drain connection of the semiconductor device. Second gull wing leads are attached to the clip for a gate connection and for a source connection of the semiconductor device.

Abstract: A trigger circuit for controlling a electrostatic discharge (ESD), protection switch is provided. The present disclosure further relates to a high-voltage trigger circuit for use in eFuse (electronic fuse), load switch or ideal diode applications, or in any other application with a large n-channel FET between two pins. The trigger circuit ensures that the ESD protection gate can be left floating after the ESD event.

Abstract: An insulated-gate bipolar transistor device is provided including: a first region doped with a first type of charge carriers; a second region doped with a second type of charge carriers different from the first type; a third region doped with the first type; a fourth region doped with the second type; a first, emitter terminal electrically connected with the first region and a second, collector terminal electrically connected with the third region and the fourth region; and a gate structure disposed on the third region with one end adjacent to the second region and with another end adjacent the fourth region; as well as a diode structure having a first diode structure terminal electrically connected with the collector terminal and a second diode structure terminal electrically connected with the gate terminal of the gate structure; and the diode structure is a paired with a antiparallel diode.

Abstract: A semiconductor device is provided including: an epitaxial layer doped with a first type of charge carrier; at least one junction termination extension (JTE), embedded in the epitaxial layer so that an upper surface of the JTE is flush with an upper surface of the epitaxial layer, the JTE is doped with a second type of charge carrier different from the first type and at a higher doping concentration than the concentration of the epitaxial layer; a passivation layer containing a sufficient quantity of the second type of charge carrier disposed on a part of an upper surface of the JTE, so that the passivation layer is arranged to induce a surface charge density greater than 5E11 cm?2 of the second type of charge on the part of the upper surface of the JTE, by depleting an interior area of the JTE of free charge carriers of the second type.

Abstract: A carrier for laser die transfer of semiconductor dies to a wafer and a pick-and-place apparatus is provided. The carrier includes an optically transparent secondary support layer, an optically transparent primary support layer attached to the secondary support layer, the primary support layer including regions of an optically transparent first material, and a dynamic release layer attached to the primary support layer, the dynamic release layer contacts the regions of a first material. The dynamic release layer is configured to be coupled to semiconductor dies, and to release semiconductor dies among the semiconductor dies when a region of the dynamic release layer directly adjacent to the semiconductor dies is illuminated using laser light. The secondary support layer has a material composition different from the first material for reducing a flow of heat away from the primary support layer during the laser die transfer process.

Abstract: The present disclosure proposes an encapsulated semiconductor package and a method of manufacturing such a encapsulated semiconductor package, the semiconductor package includes at least one lead terminal having an exposed lead end extending from the encapsulated semiconductor package, the exposed lead end includes a free lead end surface, the free lead end surface at least one notch, and the free lead end surface and the notch are plated with a plating material.

Abstract: A package structure for a power semiconductor device is provided, including: a substrate; two or more semiconductor dies on the substrate, each of the semiconductor dies includes a first power switching pad, a second power switching pad and a gate; a gate control conductive trace, a first power switching contact and a second power switching contact are further arranged on the substrate, the gate control conductive trace is connected to each of the semiconductor dies via a bonding component, and the bonding component connecting a first semiconductor die to the gate control conductive trace is sandwiched between circuit lines formed by connecting the second power switching pads of the first semiconductor die and the neighboring second semiconductor die, to second power switching contact of the substrate.

Abstract: A pass gate circuit arranged for providing an input to an output based on a control signal, the pass gate circuit including a pass gate switch circuit including a P-Metal Oxide Semiconductors (PMOS) Field Effect Transistor (FE), PMOS FET, cascaded in parallel with an NMOS FET, the pass gate switch circuit is arranged to provide the input to the output, and includes a control circuit including two in series cascaded inverters, an output of a first of the two inverters is provided to a gate of the PMOS FET and an output of a second of the two inverters is provided to a gate of the NMOS FET, and the inverters are powered by a supply voltage.

Abstract: An MPS diode and a manufacturing method is provided. The diode includes a semiconductor body including an active area and an adjacent termination area, the active area includes a drift region of a first conductivity type, and a plurality of wells of a second type different from the first conductivity type, the wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The diode further includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the metal layer assembly forming a plurality of Schottky contacts together with the drift region and a plurality of respective Ohmic contacts with the wells. The drift region includes a doped region surrounding each of the wells and having a higher dopant concentration than a remainder of the drift region, and the doped region is spaced apart from the termination area.

Abstract: A semiconductor device and method of manufacturing thereof is provided, including one or more mutually separated trench structures and semiconductor devices in which a first polysilicon body and a second polysilicon body are provided in the trenches, and the first and second polysilicon bodies can be individually biased. The method according to the present disclosure includes the step of performing a wet oxidation for oxidizing the first polysilicon body and the exposed upper surface of the sidewall for forming, within the active area, a first part of a second dielectric layer and subsequently performing a dry oxidation for forming a remaining part of the second dielectric layer. A second polysilicon body is arranged next within the active area on the second dielectric layer in the trench so that the second polysilicon body is separated from the sidewall of the trench and from the first polysilicon body by the second dielectric layer.

Abstract: A method for producing a semiconductor package includes providing a lead frame and a bond pad with a space therebetween. The frame is provided with a die bonded thereon and a die pad. The die, the pad, a part of the frame, a part of the bond pad and the space between the frame and the bond pad are encapsulated. Part of the first encapsulation is removed to create a cavity having a bottom surface including an exposed surface of the die, an exposed surface of the pad, an exposed surface of the bond pad and a connecting region between the exposed surface of the pad and the bond pad. The cavity is partly filled with an electrically conductive paste. The electrically conductive paste is cured to obtain an interconnect between the die pad and the bond pad. The interconnect is encapsulated.

Abstract: A Metal Oxide Semiconductor (MOS), Field Effect Transistor (FET), (MOSFET) is provided, including a semiconductor body having a first major surface, and two trenches extending in the semiconductor body from the first major surface, a source region of a first conductivity type adjacent sidewalls of the two trenches at the first major surface, a drain region of the first conductivity type adjacent the two trenches at a position distant from the source region, a channel-accommodating region, of a second conductivity type opposite to the first conductivity type, adjacent the sidewalls of the two trenches between the source region and the drain region, and a first of the two trenches extends further into the semiconductor body compared to a second of the two trenches.

Abstract: A semiconductor device and a manufacturing method thereof is provided. The device includes a semiconductor layer having a first and second surface opposing each other; a trench gate in the semiconductor layer, extends in a first direction parallel to the first and second surface, and from the first surface to an interior of the layer, and has a gate open end distant from the second surface; a source region of a first conductivity type and a channel region of a second conductivity type, orthographic projections of the source region and the channel region on the second surface at least partially overlap with each other in a depth direction of the trench gate, the source region having a source open end distant from the second surface, and the farther the source open end is from the second surface, the smaller a width of the source open end in the second direction.

Abstract: A cross-coupled latch charge pump is provided, including a first inverter, a second inverter, and an output of the first inverter is connected to an input of the second inverter and an output of the second inverter is connected to an input of the first inverter. The first supply terminals of both the first and second inverter are connected to an output capacitor and second supply terminals for both the first and second inverter are connected to a reference voltage, a first fly capacitor, a second fly capacitor, and a first plate of the second fly capacitor is arranged for receiving a second clock signal, and a second plate of the second fly capacitor is connected to the input of the second inverter. The cross-coupled latch charge pump includes a transistor connected between the reference voltage and the second supply terminals.

Abstract: A parallel multiple-port system is provided, including a plurality of ports, a plurality of processors, and a memory storing software code which, when executed by the plurality of processors causes the processors to control the plurality of ports. A first processor is configured to control a first port. A second processor is configured to control a second port. The software code includes a common software code portion relevant to the plurality of ports and for execution by the plurality of processors. The software code further includes a port specific code portion including first configuration data for the first port and for execution by the first processor, and second configuration data for the second port and for execution by the second processor. The present application can advantageously be applied to parallel multi-port charging systems.

Abstract: An apparatus for transferring a semiconductor die from an arrangement dies to a target is provided and relates to a wafer stage, and film frame carrier, and to an assembly including the film frame carrier and arrangement of dies. The wafer chuck includes a rotationally mounted curved shell on which the arrangement of semiconductor dies can be arranged. The wafer stage includes a motor for rotating the curved shell around a rotational axis. The configuration allows improved throughput of the wafer stage. The carrier used with this wafer stage includes a ring-shaped body with an asymmetric bending stiffness allowing the ring-shaped body to be bent so that the mounting surface of the ring-shaped body changes from a first shape to a second more concave shape and prevents or limits the ring-shaped body to be bent so that the mounting surface becomes more convex than the first shape.