Abstract: A system for sensing a current through a transistor is provided and a DC-DC converter including one or more such systems. The system includes a transistor module, including: a primary transistor electrically connected between a first and a second terminal; and a secondary transistor electrically connected between the first and a third terminal, a control terminal of the secondary transistor is electrically connected to a control terminal of the primary transistor. The system includes a current sensing module electrically connected to the transistor module and having an output terminal. The system is operable in a first mode in which the current sensing module outputs, at the output terminal, a first output signal indicative of a current through the primary transistor in a first current direction based on a voltage difference between the third and the second terminal, the first current direction being from the first to the second terminal.

Abstract: According to the disclosure a semiconductor package assembly is proposed, at least including: a lead metallic frame; a semiconductor die structure being mounted on a die pad of the lead metallic frame; at least a first bond clip connected with the semiconductor die structure; at least a further bond clip connected with the die pad of the lead metallic frame via a solder junction; and the die pad is provided with at least one recess near the connection with the at least further bond clip for accommodating solder for the solder junction. The disclosure also pertains to a method for manufacturing such a semiconductor package assembly.

Abstract: Aspects of the present disclosure relate to a transfer device, system, and method for transferring an electronic component onto a placement position on a substrate. The transfer device is based on a fluidic process principle in which electronic components are transferred in a transfer liquid. In accordance with an aspect of the present disclosure, the transfer device further includes a plurality of acoustic transducers, and a controller for controlling the plurality of acoustic transducers. The controller is configured to control the plurality of acoustic transducers to create an acoustic trap in the transfer liquid for capturing an electronic component when it is released in the transfer liquid and to subsequently manipulate the position and/orientation of the acoustic trap for the purpose of positioning the electronic component at the placement position on the substrate.

Abstract: A lateral oriented Metal-Oxide-Semiconductor device is provided, including a semiconductor body having a first surface, the body includes a first region having a first conductivity type; a trench extending from the first surface into the first region, the trench includes an insulating element and a conductive element, the insulating element is in between the conductive element and the first region, and the insulating element has a substantially uniform width; second and third regions having a second conductivity type, the second conductivity being different from the first conductivity type, the second and third regions extend from the first surface into the first region and are located on either side of, and adjacent to the trench, and are not in contact; and a further insulating region on the first surface includes openings for providing electrical contact to the second and third regions. A method of manufacturing the device is also provided.

Abstract: Aspects of the present disclosure relate to a system for transporting an electronic component. Further aspects of the present disclosure relate to a method for transporting an electronic component. According to an aspect of the present disclosure a system for transporting an electronic component is provided that includes a carrier for carrying the electronic component, and a transducer system including a plurality of transducers, the transducer system being configured for generating a levitation field in which the carrier levitates. The system also includes an input unit for arranging the electronic component onto the carrier, and an output unit for receiving the electronic component from the carrier. A controller is used for controlling the transducer system to change the levitation field for the purpose of moving the carrier from the input unit to the output unit.

Abstract: A method of testing a semiconductor device, in a package, having a junction between a semiconductor material of a first type and a semiconductor material of a second type. The junction has a temperature dependent breakdown voltage, and the method includes the steps of determining the breakdown voltage, providing a fixed voltage over the junction, via pins of the package, and the fixed voltage is higher than the breakdown voltage, and measuring, via pins of the package, a breakdown current flowing through the junction, determining a dissipated power based on the fixed voltage and the measured breakdown current, and the dissipated power is a qualitive measure for the semiconductor device.

Abstract: An electronic package and a method for manufacturing the same is provided. The electronic package includes a first substrate, an electronic component arranged on and/or formed in the first substrate, a thermally conductive second substrate including a first portion and a second portion integrally connected to the first portion, and at least the first portion among the first and second portion is fixedly attached to the electronic component, and a package material arranged to encapsulate the electronic component and to at least partially encapsulate the first and second substrate, and the package material includes a recess formed therein that extends up to a surface of the first portion.

Abstract: A vertical semiconductor component including: a substrate; an epitaxial layer doped with a first conductivity type, preferably n-doped, provided on the substrate; a metal layer deposited on the epitaxial layer to form a Schottky contact with the epitaxial layer; a plurality of first regions embedded in the epitaxial layer and contacting the metal layer, and doped with a second conductivity type, in order to form a plurality of pn-junctions with the epitaxial layer; and a plurality of second regions embedded in a first region and contacting the metal layer, and doped with a second conductivity type, at a higher concentration, in order to form a plurality of low-resistance ohmic contacts with the metal layer. The semiconductor component includes a lateral cross section along which there are more first regions than second regions.

Abstract: This disclosure relates to an adhesive dispense unit for a semiconductor die bonding apparatus. The adhesive dispense unit includes an adhesive dispense nozzle and a pin member; the pin member comprising a down stand portion and a sheath portion, and the down stand is reciprocateable within the sheath portion.

Abstract: A load switch and a power system are provided. The load switch includes a power input terminal, a power output terminal, a voltage-current conversion circuit, a capacitor and a comparator. The power input terminal is configured to receive an input voltage. The power output terminal is configured to provide an output voltage. The voltage-current conversion circuit includes a first input terminal, a second input terminal and a current difference output terminal. The first input terminal and the second input terminal are connected to the power output terminal and the power input terminal, respectively, and configured to receive the output voltage and the input voltage, respectively. A current difference characterizing a voltage difference between the output voltage and the input voltage is output at the current difference output terminal.

Abstract: A method of creating a vertical semiconductor device, the method includes the steps of performing a LOCal Oxidation of Silicon, LOCOS, process in a vertical trench of a semiconductor material so that oxide material is formed inside the vertical trench, and ledges are formed by the oxide material, inside the vertical trench, as a result of the LOCOS process, so that a lower region of reduced lateral distance is formed between the oxide material, at a base of the trench, depositing the trench with polysilicon and etching the polysilicon downward up to the oxide material using interferometric end point detection, so that polysilicon remains in the lower region.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device. The chip scale package semiconductor device comprises: a semiconductor die having a first major surface and an opposing second major surface, the semiconductor die comprising at least two terminals arranged on the second major surface; a carrier comprising a first major surface and an opposing second major surface, wherein the first major surface of the semiconductor die is mounted on the opposing second major surface of the carrier; and a molding material partially encapsulating the semiconductor die and the carrier, wherein the first major surface of the carrier extends and is exposed through molding material, and the at least two terminals are exposed through molding material on a second side of the device.

Abstract: A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes: a semiconductor body having a first surface and a second surface, the semiconductor body includes: a depletion region, a drift region having a first conductivity type, an island region having the first conductivity type, a buffer region having the first conductivity type, the drift region is more proximal to the first surface of the semiconductor body than the buffer region, the depletion region is located within the drift region, and the island region is located within the drift region, an ion concentration of the first conductivity type of the island region is higher than an ion concentration of the first conductivity type of the drift region.

Abstract: An inductor-less power converter for converting an input voltage at an input terminal to an output voltage at an output terminal is provided, with a conversion ratio between the input and output voltage. The converter can be an inductor-less power converter which is configured for Direct Current, DC, to DC, DC-DC conversion of an input voltage to an output voltage. The input voltage is provided at an input terminal pair whereas the output voltage is provided at an output terminal pair. The ratio between the input voltage and the output voltage defines the conversion ratio, which may be either larger than one or smaller than one, meaning that the voltage may be stepped-up or stepped-down and thus increased or lowered.

Abstract: The present disclosure relates to an energy harvesting system for converting a low-voltage input of an energy harvesting source into a Direct Current (DC) output voltage. The energy harvesting source is one of an energy harvesting source providing an Alternating Current (AC) output such as a piezoelectric energy harvesting source, and an energy harvesting source providing a DC output such as a photovoltaic energy harvesting source.

Abstract: A trench-gate semiconductor device and a manufacturing method therefore is provided. The device includes one or more unit cells, each unit cell includes a trench a first oxide layer arranged on an upper portion of a side wall of the trench, the first oxide layer forming a gate oxide of the unit cell, and a second oxide layer arranged on a lower portion of the side wall and on a bottom of the trench.

Abstract: Aspects of the present disclosure relate to a molded electronic package and a method for manufacturing the same. The molded electronic package includes a first substrate, a second substrate, an electronic component arranged on the first substrate, a spring member arranged between the second substrate and the electronic component, the spring member including a first contact portion being fixated relative to the second substrate, and a second contact portion physically contacting the electronic component, and a body of solidified molding compound configured to encapsulate the electronic component and the spring member and to mutually fixate the first substrate, the second substrate, the electronic component and the spring member. The second substrate and the spring member are electrically and/or thermally conductive.

Abstract: Aspects of the present disclosure relate to a semiconductor device package and to a method for manufacturing the same. The semiconductor device package includes a semiconductor die having a circuit integrated thereon, a first clip including a first planar portion and one or more first leads extending from the first planar portion, the first planar portion including one or more first protrusions, and a second clip including a second planar portion and one or more second leads extending from the second planar portion, the second planar portion including a plurality of second protrusions. The first planar portion and the second planar portion each physically and electrically connected to a terminal of the circuit arranged on the semiconductor die. At least one of the one or more first protrusions extends in a space between a pair of second protrusions among the plurality of second protrusions.

Abstract: This disclosure provides a design method for a radiator of a vehicle power module. The design method includes: selecting a plurality of specific values from the possible value ranges of the first distance D1, the second distance D2 and the radius R, respectively, to form different combinations of the plurality of specific values, performing simulation calculations on the different combinations, and obtaining a temperature rise ?Tj and a pressure drop ?Pf corresponding to each combination to form a plurality of samples; through a response surface method, fitting explicit functions of the temperature rise ?Tj and the pressure drop ?Pf with the first distance D1, the second distance D2 and the radius R as dependent variables; and through a multi-objective optimization, determining the first distance D1, the second distance D2 and the radius R with an optimization objective that the temperature rise ?Tj and the pressure drop ?Pf are simultaneously minimized.

Abstract: A package structure for a power semiconductor device is provided, including: a substrate; two or more semiconductor dies on the substrate, each of the semiconductor dies includes a first power switching pad, a second power switching pad and a gate; a gate control conductive trace, a first power switching contact and a second power switching contact are further arranged on the substrate, the gate control conductive trace is connected to each of the semiconductor dies via a bonding component, and the bonding component connecting a first semiconductor die to the gate control conductive trace is sandwiched between circuit lines formed by connecting the second power switching pads of the first semiconductor die and the neighboring second semiconductor die, to second power switching contact of the substrate.