Abstract: The present invention provides a copper electrolytic solution used to obtain a low-profile electrolytic copper foil with a low surface roughness on the rough side (the opposite side from the glossy side) in the production of an electrolytic copper foil using a cathode drum and, more particularly, to provide a copper electrolytic solution used to obtain an electrolytic copper foil that has excellent transmission loss characteristics at a high frequency, can be finely patterned, and has excellent elongation and tensile strength, both at ordinary and high temperatures. The copper electrolytic solution of the present invention contains (A) at least one quaternary amine salt selected from the group consisting of (a) quaternary amine salts obtained by a reaction between epichlorohydrin and an amine compound mixture composed of a secondary amine compound and a tertiary amine compound, and (b) polyepichlorohydrin quaternary amine salts, and (B) an organic sulfur compound.

Abstract: There is obtained a low-profile electrolytic copper foil with a small surface roughness on the side of the rough surface (the opposite side from the lustrous surface) in the manufacture of an electrolytic copper foil using a cathode drum, and more particularly an electrolytic copper foil which allows fine patterning, and is superior in terms of elongation and tensile strength at ordinary temperatures and high temperatures. The present invention provides a copper electrolytic solution, containing as additives an organo-sulfur compound and a quaternary amine compound polymer obtained by homopolymerizing a compound in which the nitrogen of an acrylic type compound having a dialkylamino group is quaternized, or copolymerizing the compound with another compound having an unsaturated bond, and an electrolytic copper foil manufactured using this electrolytic solution.

Abstract: A surface treated copper foil with improved adhesion to the insulating resin of a copper-clad laminate for higher frequency applications contains a copper foil provided with a heat-resistant layer and an olefin-based silane coupling agent layer sequentially on at least one side thereof. An anticorrosive treatment may be performed after the heat resistance treatment. The copper foil is preferably an electrolytic copper foil, and these layers can be provided on the S side and/or the M side thereof. The copper foil has an adequate adhesive strength, even without the roughening treatment that has been performed in the past. A film of zinc, zinc-tin, zinc-nickel, zinc-cobalt, copper-zinc, copper-nickel-cobalt, or nickel-cobalt can be used favorably as the heat-resistant layer, and a film that has undergone a zinc-chromate or a chromate treatment can be used favorably as the anticorrosive layer.

Abstract: There are provided a composition for functioning as an effective additive for epoxy resin that is solid at room temperature and has high storage stability, and a method thereof. The composition of the present invention is a basic silane coupling agent organic carboxylate composition obtained by first synthesizing an organic carboxylate of a basic silane coupling agent by reacting a basic silane coupling agent and an organic carboxylic acid, and subsequently heating and mixing the organic carboxylate of the basic silane coupling agent with a compound exhibiting good affinity for the basic silane coupling agent or organic carboxylic acid and having a softening point or melting point of 40° C. or greater.

Abstract: There is provided a cyanide-free immersion type electroless gold plating liquid that is low in toxicity, can be used near a neutral ph, and has a good solder adhesion and plating film adhesion. The electroless gold plating liquid contains a cyanide-free water-soluble gold compound and a pyrosulfurous acid compound. The plating liquid may further contain a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid or an alkali metal, alkaline earth metal, ammonium, or another such salt thereof can be used as the pyrosulfurous acid compound.

Abstract: A cyanide-free immersion type electroless gold plating solution that is less toxic can be used at near neutrality and gives an excellent and improved solder adhesion and plated film adhesion is provided. The electroless gold plating solution contains a cyanide-free water-soluble gold compound, a pyrosulfurous acid compound and a thiosulfuric acid compound. This plating solution preferably further contains a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid and alkali metal salts, alkaline-earth metal salts, ammonium salts and other salts thereof can be used as the pyrosulfurous acid compound.

Abstract: The invention has an object of obtaining a low-profile electrolytic copper foil made by electrolytic copper foil manufacturing using a cathode drum such that the surface roughness on the rough surface side (the opposite side to the lustrous surface) is low. In particular, the invention has an object of obtaining an electrolytic copper foil that can be finely patterned and have an excellent elongation and tensile strength at normal and high temperatures. This object is attained by using a copper electrolytic solution containing, as additives, an organosulfur compound, and an amine compound having a specific skeleton represented by undermentioned general formula (1) obtained by additively reacting an amine compound and a compound having one or more epoxy groups in a molecule thereof to an addition reaction.

Abstract: The object is to provide an electroless gold plating liquid which has an adequate deposition speed for practical use without containing any thallium or other heavy metal ions, excellent stability of the plating liquid and contains a non-cyanide gold salt as a gold salt, an alkali metal salt or an ammonium salt of sulfurous acid and thiosulfuric acid as a metal complexing agent, a hydroxyalkylsulfonic acid or a salt thereof represented by the following general formula as a reducing agent, and an amine compound, wherein R represents hydrogen, a carboxyl group, or any of a phenyl group, a tolyl group, a naphthyl group, a saturated or unsaturated alkyl group, an acetyl group, an acetonyl group, a pyridyl group and a furyl group which may have a substitutional group, X represents any of hydrogen, Na, K, and NH4, and n is an integer between 0 and 4.

Abstract: A lithium-containing complex oxide exhibits a high performance as a cathode active material of a lithium secondary cell or the like and having a high tap density. A granular lithium-containing complex oxide, such as lithium manganese complex oxide, is made up of “complex oxide grains produced by integrating lithium-rich material grains abnormally grown during a firing reaction with the surfaces of the base grains by sintering.” The number of complex oxide grains is not more than 50 per gram of the complex grains. A metal oxide such as manganese oxide and lithium carbonate not more than 5 ?m in average grain size are mixed by means of a mixer which grinds and mixes particles by using a shearing force and heated and fired at a warming rate of not more than 50° C./h., thus producing the lithium-containing complex oxide.

Abstract: Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.

Abstract: As a resin composition that solves the problems such as unpleasant odor encountered when a tertiary amine compound is used as a catalyst in a reaction of a polyol and a polyisocyanate, and that promotes the curing of these resins and improves adhesion to metals, inorganic materials, and organic materials, the present invention provides a resin composition containing the following components as essential components, (A) a polyol (B) a polyisocyanate (C) a silane coupling agent containing an imidazole group (here, the ratio NCO/OH of the number of isocyanate groups in the polyisocyanate (B) to the number of hydroxyl groups in the polyol (A) in the above composition is from 0.6 to 4.0, and the weight ratio of {(A)+(B)}:(C) is from 100:0.01 to 100:10).

Abstract: Provided is a hollow cathode sputtering target comprising an inner bottom face having a surface roughness of Ra?1.0 ?m, and preferably Ra?0.5 ?m. This hollow cathode sputtering target has superior sputter film evenness (uniformity), generates few arcing and particles, is capable of suppressing the peeling of the redeposited film on the bottom face, and has superior deposition characteristics.

Abstract: Provided is a manufacturing method of high purity oxide powder including the steps of subjecting a raw material such as Zn-containing scrap to acid leaching or electrolytic extraction, thereafter performing solvent extraction and activated carbon treatment thereto in order to remove impurities, neutralizing the resultant solution freed of impurities with an alkaline solution to obtain zinc hydroxide, and firing the zinc hydroxide to obtain zinc oxide. Provided are high purity zinc oxide efficiently freed of impurities, in particular C, Cl, S and Pb impurities, at low cost and the manufacturing method thereof; a target manufactured by firing the high purity zinc oxide; and a high purity zinc oxide thin film obtained by the sputtering the target.

Abstract: The present invention provides a Ni—Pt alloy superior in workability containing Pt in a content of 0.1 to 20 wt % and having a Vickers hardness of 40 to 90, and a target comprising the Ni—Pt alloy. The present invention also provides a manufacturing method of Ni—Pt alloy superior in workability comprising a step of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, a step of neutralizing the electrolytically leached solution with ammonia, a step of removing impurities through filtration with activated carbon, a step of blowing carbon dioxide into the resultant solution to form nickel carbonate and exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, a step of leaching a raw material Pt having a purity of 3N level with acid, a step of subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and a step of dissolving the resultant high purity Ni powder and high purity electrodeposited Pt.

Abstract: The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a solder bump and a substrate layer or a pad. Provided are a nickel alloy sputtering target and a nickel alloy thin film for forming a barrier layer having excellent wettability with the Pb-free Sn solder or Sn—Pb solder bump, and capable of inhibiting the diffusion of Sn being a soldering component and effectively preventing the reaction with the substrate layer upon forming a Pb-free Sn solder or Sn—Pb solder bump on a substrate such as a semiconductor wafer or electronic circuit or a substrate layer or pad of the wiring or electrode formed thereon.

Abstract: Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.

Abstract: Provided are high purity copper sulfate wherein the content of Ag impurities is 1 wtppm or less, and having a purity of 99.99 wt % or higher, and a manufacturing method of high purity copper sulfate including the steps of dissolving crude copper sulfate crystals or copper metal, and subjecting this to active carbon treatment or solvent extraction and active carbon treatment in order to realize recrystallization. The present invention aims to provide a manufacturing method of high purity copper sulfate capable of efficiently removing impurities at a low cost by dissolving commercially available copper sulfate crystals in purified water or acid and thereafter subjecting this to the refining process, and high purity copper sulfate obtained thereby.

Abstract: It is an object of the present invention to provide a semiconductor wafer on which a thin, smooth, uniform and good adhesive electroless plating layer that can be suitable for a seed layer is formed, and to provide an electroless plating method which is suitable for use in the manufacture of such a semiconductor wafer. A semiconductor wafer is coated with a silane coupling agent which has a functional group that is able to capture a metal, and is further coated with an organic-solvent solution of a palladium compound such as palladium chloride or the like. Afterward, the wafer is electroless plated. As a result of such an electroless plating method, a semiconductor wafer having a thickness of 70 to 5000 angstroms and a mean surface roughness Ra of 10 to 100 angstroms can be obtained.

Abstract: A tantalum sputtering target, wherein when the sum of the overall crystalline orientation is 1 on a tantalum target surface, the area ratio of crystals having any orientation among (100), (111), (110) does not exceed 0.5. Thus, obtained is a tantalum sputtering target having superior deposition properties where the deposition speed is high, film evenness (uniformity) is superior, and generation of arcings or particles is reduced.

Abstract: Provided are a high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni—V alloy capable of effectively reducing the foregoing impurities.