Abstract: A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850° C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.

Abstract: A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 ?m or less, and Ge powder having a minus sieve of 250 ?m or less and having a BET specific surface area of 0.4 m2/g or less are dispersively mixed in an even manner, and sintered thereafter. Thereby provided is a Ge—Cr alloy sputtering target capable of suppressing variation of the deposition speed and film composition, as well as improving the production yield, of the GeCrN layer deposited with reactive sputtering as the intermediate layer between the recording layer and protective layer of a phase-change optical disk, and the manufacturing method of such a target.

Abstract: A SrRuO3 conductive oxide sintered body characterized in that the relative density is 93% or more. By improving the additive amount and sintering conditions of Bi2O3, the present invention seeks to improve the relative density of a SrRuO3 conductive oxide sintered body, and to provide a conductive oxide sintered body capable of suppressing the generation of particles during sputtering upon forming a thin film and improving the quality and production yield; a sputtering target formed from such sintered body; and the manufacturing method thereof.

Abstract: Provided is an iron silicide sputtering target in which the oxygen as the gas component in the target is 1000 ppm or less, and a manufacturing method of such iron silicide sputtering target including the steps of melting/casting high purity iron and silicon under high vacuum to prepare an alloy ingot, subjecting the ingot to gas atomization with inert gas to prepare fine powder, and thereafter sintering the fine powder. With this iron suicide sputtering target, the amount of impurities will be reduced, the thickness of the ?FeSi2 film during deposition can be made thick, the generation of particles will be reduced, a uniform and homogenous film composition can be yielded, and the sputtering characteristics will be favorable. The foregoing manufacturing method is able to stably produce this target.

Abstract: The invention has an object of obtaining a low-profile electrolytic copper foil made by electrolytic copper foil manufacturing using a cathode drum such that the surface roughness on the rough surface side (the opposite side to the lustrous surface) is low. In particular, the invention has an object of obtaining an electrolytic copper foil that can be finely patterned and have an excellent elongation and tensile strength at normal and high temperatures. This object is attained by using a copper electrolytic solution containing, as additives, an organosulfur compound, and an amine compound having a specific skeleton represented by undermentioned general formula (1) obtained by additively reacting an amine compound and a compound having one or more epoxy groups in a molecule thereof to an addition reaction.

Abstract: A nickel alloy sputtering target containing 0.5 to 10 at % of tantalum in nickel, in which inevitable impurities excluding gas components are 100 wtppm or less. Provided is a nickel alloy sputtering target, and the manufacturing technology thereof, enabling the formation of a thermally stable silicide (NiSi) film, unlikely to cause the coagulation of films or excessive formation of silicides, having few generation of particles upon forming the sputtered film, having favorable uniformity and superior in the plastic workability to the target, and which is particularly effective for the manufacture of a gate electrode material (thin film).

Abstract: In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 ?m or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.

Abstract: In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).

Abstract: Provided is a hafnium silicide target for forming a gate oxide film composed of HfSi0.82-0.98, wherein the oxygen content is 500 to 10000 ppm. Manufactured is a hafnium silicide target for forming a gate oxide film, wherein powder of the composition composed of HfSi0.82-0.98 is synthesized, pulverized to be 100 mesh or less, and thereafter subject to hot pressing or hot isostatic pressing (HIP) at 1700° C. to 2120° C. and 150 to 2000 kgf/cm2. Thereby obtained is a hafnium silicide target, and the manufacturing method thereof, suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film, superior in embrittlement resistance, having a low generation of particles, and which is not likely to cause ignition of sintering powder or explosion of powder dust during the manufacturing process thereof.

Abstract: Provided is iron suicide powder in which the content of oxygen as the gas component is 1500 ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron suicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

Abstract: Provided is a first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wt ppm or less of Si; a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wt ppm or less of Mn; the first or the second alloy sputtering target further comprising one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wt ppm or less; and a semiconductor element wiring formed by the use of the above target. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.

Abstract: A manufacturing method of a Ta sputtering target in which a Ta ingot or billet formed by melting and casting is subject to forging, annealing, rolling processing and the like to prepare a sputtering target, wherein the ingot or billet is forged and thereafter subject to recrystallization annealing at a temperature of 1373K to 1673K. As a result of improving and devising the forging process and heat treatment process, the crystal grain diameter can be made fine and uniform, and a method of stably manufacturing a Ta sputtering target superior in characteristics can be obtained thereby.

Abstract: Provided is an iron-based sintered body with a rustproof function comprising a layer containing 0.01 to 5 at % of indium on the surface of the iron-based sintered body, or an iron-based sintered body with a rustproof function containing 0.01 to 5 at % of indium throughout the sintered body, and the iron-based sintered body having iron as its principal component is manufactured by performing sintering in a gas atmosphere containing indium vapor or indium. Thereby obtained is an iron-based sintered body, as well as the manufacturing method thereof, capable of easily improving the rustproof effect without having to hardly change the conventional process.

Abstract: The present invention relates to a carrier-added copper foil and a print substrate using such copper foil characterized in comprising a resin layer and a functional material layer at least on a part of the copper foil. A carrier-added copper foil and a print substrate using such copper foil are obtained by forming an insulating layer and functional material layer having an area smaller than the area of the copper foil on the surface of the carrier-added copper foil with the screen printing method, thereby improving the handling of such copper foil, preventing the adhesion of contaminants such as resin powder on the copper foil surface during the cutting procedure, preventing scratches and dimples caused by foreign matter, and effectively preventing the generation of scratches, wrinkles and creases during the cutting, packaging and transportation procedures.

Abstract: High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less; and a method for producing such high purity copper sulfate which includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration.

Abstract: The present invention relates to a II-VI compound semiconductor crystal comprising an n-type contact layer which includes a superlattice layer comprising n-type CdSe and n-type ZnTe stacked with each other, on a ZnTe-base compound semiconductor layer; a A II-VI compound semiconductor crystal comprising an n-type contact layer which includes an n-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varies, on a ZnTe-base compound semiconductor layer; a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a superlattice layer comprising p-type CdSe and p-type ZnTe stacked with each other, on a CdSe-base compound semiconductor layer; and a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a p-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varied, on a CdSe-base compound semiconductor layer.

Abstract: A manufacturing method of ITO powder with tin dissolved in indium oxide, wherein the ITO powder is obtained by performing spray pyrolysis to a mixed solution or slurry of indium nitrate and tin chloride in which the concentration of indium and tin is 3.0 mol/L or more, thereby providing at low costs ITO powder superior in component dispersibility by dissolving tin in indium oxide as well as a precise target superior in uniformity. It is thereby possible to restrain the deterioration of quality or abnormal protrusions such as nodules in cases where the ITO sputtering target deposition is not uniform.

Abstract: A water-based metal surface treatment agent for the surface treatment of metals including aluminum products such as pre-coated aluminum sheets gives excellent coating film adhesion, flexibility and acid resistance. The water-based metal surface treatment agent contains the following components (1) to (3): (1) A copolymer, containing in a side chain, a diketene or ketoester capable of switching between keto and enol tautomeric forms, and containing at least one hydrophilic side chain containing a cationic group, an anionic group, or a nonionic group; (2) An epoxy resin modified with a phosphoric acid type compound; and (3) A water-soluble curing agent.

Abstract: The present invention provides an organic carboxylate composition that has long working life, cures epoxy resins, and improves adhesive properties, and also provides a method for producing the same. An organic carboxylate composition, obtained by heating and mixing a basic silane coupling agent and an amine compound with a softening point or melting point of 40° C. or greater together with an organic carboxylic acid; a method for producing the same; an additive for epoxy resin that contains this as the active ingredient thereof; and an epoxy resin composition containing the same. The basic silane coupling agent should preferably be a specific imidazole-group containing silane coupling agent, amino group-containing silane coupling agent, dialkylamino group-containing silane coupling agent, monomethylamino group-containing silane coupling agent, benzimidazole group-containing silane coupling agent, benzotriazole group-containing silane coupling agent, and pyridine ring-containing silane coupling agent.

Abstract: A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth.