Abstract: There is provided a technology that can be applied as a substrate material to ordinary resin substrate materials and allows the adhesive strength between this substrate material and a plating metal layer to be increased; more specifically, there is provided an ordinary resin substrate material with an increased adhesive strength between the substrate material and a plating metal layer. The present invention relates to a resin substrate material such as an epoxy resin whose surface is swellable in a solution containing imidazolesilane and a palladium or other noble metal compound having a catalytic action in electroless plating and which has been surface-treated with the solution, and to an electronic component substrate material manufactured by performing electroless plating on this resin substrate material.

Abstract: It is an object of the present invention to provide a technology for forming an ULSI fine copper wiring by a simpler method. An electronic component in which a thin alloy film of tungsten and a noble metal used as a barrier-seed layer for an ULSI fine copper wiring is formed on a base material, wherein the thin alloy film has a composition comprising tungsten at a ratio equal to or greater than 60 at. % and the noble metal at a ratio of equal to or greater than 5 at. % and equal to or less than 40 at. %. The noble metal is preferably one or more kinds of metals selected from the group consisting of platinum, gold, silver and palladium.

Abstract: A Cu—Zn alloy strip and Sn plating strip thereof having improved thermal peel resistance of Sn Plating is provided. In a Cu—Zn alloy strip comprising 15 to 40% by mass of Zn and a balance of Cu and unavoidable impurities, the total concentration of P, As, Sb and Bi is regulated to 100 ppm by mass or less, the total concentration of Ca and Mg is regulated to 100 ppm by mass or less, and the concentrations of O and S are each regulated to 30 ppm by mass or less.

Abstract: It is an object of the present invention to provide a novel imidazole alcohol compound that adheres strongly to metal surfaces in metal products, especially copper, aluminum and steel products, and that has a superior rust-preventive effect even in a thin film, and a surface-treating agent using the same. The novel imidazole alcohol compound is expressed by the following general formula (1) show a rust-preventive effect. (In general formula (1), R1, R2 and R3 are each hydrogen, a vinyl group or an alkyl group with 1 to 20 carbon atoms, an aromatic ring may be formed by R2 and R3, X indicates hydrogen, an alkyl group with 1 to 6 carbon atoms, or a substituent group which may contain N or O, m indicates an integer from 0 to 20, and n and l indicate integers from 1 to 3.) The above-mentioned imidazole alcohol compound can be produced by reacting an imidazole compound and an epoxy alcohol compound.

Abstract: It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing an epitaxial layer on a semiconductor substrate, a resistivity of the semiconductor substrate at a room temperature is previously measured, a set temperature of the substrate is controlled depending on the resistivity at the room temperature such that a surface temperature of the substrate is a desired temperature regardless of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.

Abstract: Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

Abstract: The object of the present invention is to provide a metal plating method by a simple process, for example, on resins on which plating has been heretofore impossible. The metal plating method involves surface treating an article to be plated with a liquid prepared by mixing or reacting in advance an organic acid salt of a silane coupling agent containing an azole in a molecule, for example, a coupling agent which is an equimolar reaction product of imidazole and ?-glycidoxypropyltrimethoxysilane, and a noble metal compound, and then conducting electroless plating thereon.

Abstract: A preparation method of lithium carbonate, in recovering valuable resources of a lithium-ion battery, reducing impurities from lithium carbonate, having a pretreatment process, comprising: a first step cleaning an organic phase containing nickel and lithium prepared by a solvent extraction by use of a sulfuric acid solution containing nickel and enriching lithium in the cleaning solution; a second step extracting a residual nickel only by an organic solvent from a post-cleaning solution in which the lithium is enriched; and a third step controlling pH of the post-extraction solution containing the lithium by ammonia water or lithium hydroxide.

Abstract: Provided is a non-adhesive flexible laminate comprising a polyimide film at least one surface of which has been plasma-treated, a tie-coat layer formed on the plasma-treated surface, a metal seed layer formed on the tie-coat layer, and a metal conductor layer formed on the metal seed layer, wherein a ratio ?p/?t of actual density ?p to theoretical density ?t of the tie-coat layer satisfies ?p/?t>0.6. The invention aims to improve the adhesion between the metal layer and the polyimide film of the non-adhesive flexible laminate (in particular a two-layered metalizing laminate).

Abstract: Provided is a sintered silicon wafer in which the maximum crystal grain size is 20?m or less and the average crystal grain size is 1?m or more but not more than 10?m; specifically, provides is a sintered silicon wafer having the following mechanical properties measured by collecting a plurality of test samples from the sintered silicon wafer having a diameter of 400mm or more, namely, the average deflecting strength based on a three-point bending test of 20kgf/mm2 or more but not more than 50kgf/mm2, the average tensile strength of 5kgf/mm2 or more but not more than 20kgf/mm2, and the average Vickers hardness of Hv 800 or more but not more than Hv 1200. The provided sintered silicon wafer is a sintered compact wafer having a fixed strength and mechanical properties similar to those of single-crystal silicon even when it is a sintered silicon wafer of large-size disk shape.

Abstract: The present invention relates to a non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer formed on the tie-coat layer, wherein a proportion (T/Rz) of the tie-coat layer thickness (T) to 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is 2 or more. An object of the invention is not only to improve initial adhesion which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), but also to increase adhesion of the laminate after heat aging (after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere).

Abstract: Provided is a sputtering target of nonmagnetic-particle-dispersed ferromagnetic material comprising a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 ?m and a long side of 50 to 300 ?m formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 ?m around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material.

Abstract: A sputtering target for producing a metallic glass membrane characterized in comprising a structure obtained by sintering atomized powder having a composition of a ternary compound system or greater with at least one or more metal elements selected from Pd, Zr, Fe, Co, Cu and Ni as its main component (component of greatest atomic %), and being an average grain size of 50 ?m or less. The prepared metallic glass membrane can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This sputtering target for producing the metallic glass membrane is also free from problems such as defects in the metallic glass membrane and unevenness of composition, has a uniform structure, can be produced efficiently and at low cost, and does not generate many nodules or particles. Further provided is a method for manufacturing such a sputtering target for forming the metallic glass membrane.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and collecting indium or tin as oxides. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane to precipitate hydroxide of tin, thereafter extracting anolyte temporarily, and precipitating and collecting indium contained in the anolyte as hydroxide. With the methods for collecting valuable metal from an ITO scrap described above, indium or tin may be collected as oxides by roasting the precipitate containing indium or tin. Consequently, provided is a method for efficiently collecting indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 ?m or less or 60 ?m or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: Provided is a sintered oxide compact target for sputtering comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the composition ratio of the respective elements satisfies the Formula of InxGayZnzOa {wherein 0.2?x/(x+y)?0.8, 0.1?z/(x+y+z)?0.5, a=(3/2)x+(3/2)y+z}, and the number of ZnGa2O4 spinel phases having an average grain size of 3 ?m or larger existing in a 90 ?m×90 ?m area range of the sintered oxide compact target is 10 or less. With this sintered oxide compact target for sputtering comprising In, Ga, Zn, O and unavoidable impurities, the structure of the sintered compact target is improved, the formation of a phase to become the source of nodules is minimized, and the bulk resistance value is reduced. Whereby provided is a high density IGZO target capable of inhibiting abnormal discharge and which can be used in DC sputtering.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap including a step of collecting tin by subjecting the ITO scrap to electrolysis. Further proposed is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and a tin collecting bath, dissolving the ITO scrap in the electrolytic bath, and thereafter collecting tin in the tin collecting bath. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of dissolving the ITO scrap by subjecting it to electrolysis as an anode in electrolyte, precipitating only tin contained in the solution as tin itself or a substance containing tin, extracting the precipitate, placing it in a collecting bath, re-dissolving this to obtain a solution of tin hydroxide, and performing electrolysis or neutralization thereto in order to collect tin.

Abstract: Provided are a method of recovering valuable metals from IZO scrap, wherein indium and zinc are recovered as hydroxides by using an IZO scrap as both an anode and a cathode, and performing electrolysis while periodically reversing polarity; and a method of recovering valuable metals from IZO scrap, wherein the hydroxides of indium and zinc obtained by the electrolysis are roasted and indium and zinc are recovered as oxides. Specifically, provided is a method which enables the efficient recovery of indium and zinc from IZO scrap such as a spent indium-zinc oxide (IZO) sputtering target and IZO mill ends arising during the manufacture of such a sputtering target.

Abstract: Provided is a method of recovering valuable metals from IZO scrap in which valuable metals are recovered as indium and zinc metals or suboxides by performing electrolysis using an insoluble electrode as an anode and an IZO scrap as a cathode. Specifically, this method enables the efficient recovery of indium and zinc from IZO scrap such as an indium-zinc oxide (IZO) sputtering target or IZO mill ends that arise during the manufacture of such a sputtering target.

Abstract: Provided are a method of recovering valuable metals from IZO scrap, wherein valuable metals are recovered as hydroxides of indium and zinc by using an insoluble electrode as an anode or a cathode and an IZO scrap as the other cathode or anode as the opposite electrode, and performing electrolysis while periodically reversing polarity; and a method of recovering valuable metals from IZO scrap, wherein the hydroxides of indium and zinc obtained by the electrolysis are roasted and valuable metals are recovered as oxides of indium and zinc. Specifically, provided is a method which enables the efficient recovery of indium and zinc from IZO scrap such as a spent indium-zinc oxide (IZO) sputtering target and IZO mill ends arising during the manufacture of such a sputtering target.