Abstract: Provided is a thin film mainly comprising titanium oxide, wherein the thin film comprises components of Ti, Ag and O and contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and O/(2Ti+0.5Ag) as a ratio of oxygen to metals is 0.97 or more. This invention aims to provide a thin film mainly comprising titanium oxide having a high refractive index and a low extinction coefficient, a sintered sputtering target mainly comprising titanium oxide suitable for producing the thin film, and a method of producing a thin film mainly comprising titanium oxide. This invention also aims to provide a thin film that has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium.

Abstract: Provided is a method of producing a two-layered copper-clad laminate with improved folding endurance, wherein the two-layered copper-clad laminate retains folding endurance of 150 times or more measured with a folding endurance test based on JIS C6471 by subjecting the laminate in which a copper layer is formed on a polyimide film through sputtering and plate processing to heat treatment at a temperature of 100° C. or more but not exceeding 175° C. Specifically, provided are a method of producing a two-layered copper-clad laminate (two-layered CCL material) in which a copper layer is formed on a polyimide film through sputtering and plate processing, wherein the rupture of the outer lead part of a circuit can be prevented due to the improvement in folding endurance; and a two-layered copper-clad laminate obtained from the foregoing method.

Abstract: A high strength titanium copper alloy consists of Ti at 2.0% by mass or more to 3.5% by mass or less; the balance of copper and inevitable impurities; an average grain size of 20 ?m or less; and a 0.2% proof stress expressed by “b” of 800 N/mm2 or more. The alloy further comprises a bending radius ratio (bending radius/sheet thickness) not causing cracking as expressed by “a” by a W-bending test in a transverse direction to a rolling direction, wherein “a” and “b” satisfy a?0.

Abstract: The object of the present invention is to obtain a low profile electrolytic copper foil with a low surface roughness at the rough surface side (opposite side from the glossy side) in the electrolytic copper foil manufacture using a cathode drum and, particularly, to obtain an electrolytic copper foil with excellent elongation and tensile strength that permits fine patterning. Another object is to obtain a copper electrolytic solution that allows uniform copper plating without pinholes on a 2-layer flexible substrate. This copper electrolytic solution contains, as an additive, a compound having the specific skeleton represented by General Formula (1) below which is obtained by an addition reaction in which water is added to a compound having in a molecule one or more epoxy groups: wherein A is an epoxy compound residue and n is an integer of 1 or more.

Abstract: Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

Abstract: There is provided a Sn-plated material comprising a base plated layer made of Ni or a Ni alloy having a thickness of 0.2 to 1.5 ?m, an intermediate plated layer made of a Cu—Sn alloy having a thickness of 0.1 to 1.5 ?m, and a surface plated layer made of Sn or a Sn alloy having a thickness of 0.1 to 1.5 ?m in this order on the surface of copper or a copper alloy, and the mean crystal particle size of the Cu—Sn alloy forming the intermediate plated layer is 0.05 ?m or larger but is smaller than 0.5 ?m when a cross section of the intermediate plated layer is observed.

Abstract: Provided is a method of producing high purity ytterbium, wherein the high purity ytterbium is obtained by reducing crude ytterbium oxide in a vacuum with reducing metals composed of metals having a low vapor pressure, and selectively distilling ytterbium. Additionally provided are methods of achieving the high purification of ytterbium which has a high vapor pressure and is hard to refine in a molten state, and high purity ytterbium obtained thereby. Further provided is technology for efficiently and stably obtaining a sputtering target made of high purity material ytterbium, and a thin film for metal gates containing high purity material ytterbium.

Abstract: Provided is a copper foil for a printed circuit board comprising a layer including nickel, zinc, a compound of nickel and that of zinc (hereinafter referred to a “nickel zinc layer”) on a roughened surface of a copper foil, and a chromate film layer on the nickel zinc layer, wherein the zinc add-on weight per unit area of the nickel zinc layer is 180 ?g/dm2 or more and 3500 ?g/dm2 or less, and the nickel weight ratio in the nickel zinc layer {nickel add-on weight/(nickel add-on weight+zinc add-on weight)} is 0.38 or more and 0.7 or less. This surface treatment technology of a copper foil is able to effectively prevent the circuit corrosion phenomenon in cases of laminating a copper foil on a resin base material and using a sulfuric acid hydrogen peroxide etching solution to perform soft etching to the circuit.

Abstract: A high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. Further provided is a method of manufacturing such high purity Ni—V alloys capable of effectively reducing the foregoing impurities.

Abstract: Provided is an Sb—Te alloy sintered compact sputtering target having at least Sb or Te as its primary component, wherein surface roughness Ra is 0.4 ?m or less, purity excluding gas components is 4N or more, content of gas components as impurities is 1500 ppm or less, and average crystal grain size is 50 ?m or less. With this Sb—Te alloy sintered compact sputtering target, the density of defects having a maximum length of 10 ?m or greater arising in a surface finish by machining is 80 or less in an 800 ?m square. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X<m, 0?Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: Provided is a cathode material for a lithium secondary battery composed of an aggregate of Li-A-O composite oxide particles (wherein A represents one or more metal elements selected from Mn, Fe, Co and Ni), wherein the lithium composite oxide contains 20 to 100 ppm (by mass) of P, and the total content of impurity elements excluding essential components is 2000 ppm or less. Also provided is a manufacturing method of such a cathode material for a lithium secondary battery including the steps of suspending lithium carbonate in water and thereafter introducing a metallic salt solution of one or more metal elements selected from Mn, Fe, Co and Ni in the lithium carbonate suspension, adding a small amount of phosphoric acid so that the P content in the Li-A-O composite oxide particles will be 20 to 100 ppm (by mass), and forming an aggregate of Li-A-O composite oxide particles containing 20 to 100 ppm (by mass) of P by filtering, cleansing, drying and thereafter oxidizing the obtained carbonate.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 ?m or less or 60 ?m or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.

Abstract: Provided is a hydrogen separation membrane characterized by comprising a structure obtained by sintering atomized powder having a composition of NixMyZr100-x-y (wherein M is Nb and/or Ta, 25?x?40, 25?y?40) and an average grain size of 50 ?m or less. The prepared hydrogen separation membrane does not require the use of costly Pd metal, and can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This hydrogen separation membrane is free from problems such as defects in the hydrogen separation membrane and unevenness of composition, has a uniform structure, and is capable of separating hydrogen at low cost. Further provided are a sputtering target for forming such as hydrogen separation membrane and its manufacturing method.

Abstract: A copper alloy sputtering target is provided and contains 0.01 to (less than) 0.5 wt % of at least one element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.

Abstract: Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 pppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

Abstract: Provided is a metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating, wherein the copper plated layer or copper alloy plated layer comprises three layers to one layer of the copper layer or copper alloy layer, and there is a concentrated portion of impurities at the boundary of the copper layer or copper alloy layer when the copper layer or copper alloy layer is three layers to two layers, and there is no concentrated portion of impurities when the copper layer or copper alloy layer is a single layer. The provided metal covered polyimide composite can effectively prevent peeling in a non-adhesive flexible laminate (especially a two-layer flexible laminate), particularly can effectively inhibit peeling from the interface of a copper layer and tin plating.

Abstract: A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method.

Abstract: Provided is a copper foil for printed circuit comprising a roughened layer on a surface of a copper foil by way of copper-cobalt-nickel alloy plating, a cobalt-nickel alloy plated layer formed on the roughened layer, and a zinc-nickel alloy plated layer formed on the cobalt-nickel alloy plated layer, wherein the total amount of the zinc-nickel alloy plated layer is 150 to 500 ?g/dm2, the lower limit of the nickel ratio in the alloy layer is 0.16, the upper limit thereof is 0.40, and the nickel content is 50 ?g/dm2 or more. With the development of electronic equipment, the miniaturization and high integration of semiconductor devices have advanced further. This tendency has led to a demand for the adoption of a higher temperature in treatment in a production process of printed circuits and has led to heat generation during the use of electronic equipment after the productization.