Abstract: A serial-to-parallel type multiplier capable of performing a highspeed calculation with high precision includes a selection circuit provided in a unit calculation block, an output of this selection circuit being input into an adder, and the selection circuit selectively outputs either a logic product between a multiplier bit to be input into this unit calculation block and a multiplicand bit input into this unit calculation block within one unit time period or a logic product between a multiplier bit to be input into this unit calculation block and a multiplicand bit input into this unit calculation block within a unit time period prior to the above-described one unit time period.

Abstract: To provide a resistor array circuit device and variable gain device which make possible precise setting of attenuation factors and the like as well as prevention of generation of gridge noise, a resistor array circuit device has resistors R1.sub.1 to R1.sub.n-1, each with a resistance value R, resistors R2.sub.1 to R2.sub.n, each with a resistance value aR, resistor R3 having a resistance value (l+b)R, switches SW.sub.1 to SW.sub.n for switching connection of resistors R2.sub.1 to R2.sub.n to a terminal T3 or a terminal T4, and a control circuit for controlling switches SW.sub.1 to SW.sub.n so that resistors R2.sub.1 to R2.sub.m-1 on a terminal T1 side of an arbitrary resistor R2.sub.m are connected to terminal T4 and resistors R2.sub.m to R2.sub.n on a terminal T2 side of resistor R2.sub.m are connected to terminal T3, the values of the a and b being determined based on b={-1+(1+4a).sup.1/2 }/2 and 1/2<a/(1+a+b).

Abstract: An integrated circuit device includes a first insulation layer formed on a substrate; a second insulation layer formed above the first insulation layer; a thin-film resistor formed on the second insulation layer; a third insulation layer in covering relation to the thin-film resistor and the second insulating layer; first contact holes penetrating the third insulation layer in association with the thin-film resistor; second contact holes penetrating through the second and third insulation layers; and conductive layers for electromagnetically shielding the thin-film resistor, the conductive layers including a first conductive layer formed between the first and second insulation layers below the thin-film resistor and a wiring layers formed above the thin-film resistor within the first and second contact holes.

Abstract: A sampling rate converter for converting a first signal having a first sampling rate to a second signal having a second sampling rate, includes a circuit for generating first data corresponding to the ratio of the second sampling rate to the first sampling rate. A second circuit generates second data by correcting the first data with corrective data. A third circuit generates third data corresponding to an estimated output timing of the second signal based upon the second data. A comparator compares the third data with a fourth data corresponding to the actual output timing of the second signal to generate comparative data. A corrective circuit is responsive to the comparative data to generate the corrective data. A further circuit is responsive to the first and third data for generating the second signal.

Abstract: A semiconductor device has a DRAM portion forming a cache memory and a flash memory portion fabricated on a common substrate, fabricated by a process based on the process of fabricating the flash memory portion. An electrode layer common to capacitors of the DRAM portion and a floating gate layer of the flash memory portion are formed simultaneously from the same material. An electrode layer of the upper capacitor of the DRAM portion, a gate electrode layer for a transistor of the DRAM portion, and a control gate layer of the flash memory portion are formed simultaneously from the same material.

Abstract: A sampling rate converter includes an arithmetic circuit for performing digital filtering processing for sampling rate conversion, and a circuit for calculating a sampling rate ratio. A memory circuit stores a plurality of groups of filter coefficients which are used in the digital filtering processing performed in the arithmetic circuit, corresponding to a plurality of sampling rate ratio ranges. A select circuit selects a filter coefficient group corresponding to the sampling rate ratio. The select circuit is arranged such that even if the sampling rate ratio is outside a sampling rate ratio range corresponding to a filter coefficient group selected at the present time, the select circuit continues to select the filter coefficient group selected at this time as long as the sampling rate ratio is within a predetermined range outside the sampling rate ratio range.

Abstract: A method of making a semiconductor device having formed thereon an inductor comprises a silicon substrate. A cut out region is obtained by removing a part of the silicon substrate in a hollow shape which may be a hollow cavity or a hollow cavity with an insulating material having a low complex permittivity such as silicon oxide buried therein. An insulator layer is formed on the cut out region and on the periphery thereof. A connection layer serves as one of the leads of the inductor and is formed using an electric conductive material such as a metal or doped polycrystalline silicon. A contact hole is provided in the interlayer insulation layer. A connection layer serves as an inductor and the other lead of the inductor, which is formed using an electric conductive material such as a metal. A protective insulator layer is also provided on the top of the structure.

Abstract: An integrated circuit device has reduced stress concentration on the IC chip for prevention of package cracks in the device. Recessed portions are formed in the package at positions corresponding to at least the corner portions of the IC chip to reduce the stress concentration generated at the corner portions of the IC chip.

Abstract: The output of the first CMOS inverter, connected as an oscillator, is applied to the inputs of second and third CMOS inverters that have logic threshold voltages higher and lower than the logic threshold voltage of the first inverter. The outputs of the second and third CMOS inverters are connected to an output circuit via a logic output circuit. The output of the logic output circuit is shorted by an output control circuit, under the control of the outputs of the second and third CMOS inverters, when the output of the oscillator is between the logic threshold voltages of the second and third inverters.

Abstract: A semiconductor includes a conductor layer formed on one side thereof toward a first surface of a substrate, and a first interlayer insulation layer on the conductor layer. The first interlayer insulation layer has a first opening extending therethrough to the conductor layer. A first wiring layer is provided on the first interlayer insulation layer, and connected to the conductor layer via the first opening. A second interlayer insulation layer is formed on the first wiring layer and has a second opening extending through the first opening to the first wiring layer. A second wiring layer is formed on the second interlayer insulation layer and extends through the second interlayer to the first wiring layer and/or the conductor layer via the first opening and the second opening.

Abstract: A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film

Abstract: A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film

Abstract: A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulating layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film

Abstract: A method for producing a reverse staggered type silicon thin film transistor includes the steps of forming a gate insulating layer on a substrate having a gate electrode, the gate insulating layer having a transistor-forming portion; forming an intrinsic silicon film on the transistor-forming portion of the gate insulating layer; forming an n-type silicon layer on the intrinsic silicon layer; forming a source electrode on the n-type silicon layer; forming a drain electrode on the n-type silicon layer; forming a resist layer on the source electrode and drain electrode and having the same shape thereof; subsequently removing a portion of the n-type silicon layer by using the resist layer as a mask, such that there remains a predetermined thickness of the n-type silicon layer; and doping the predetermined thickness of the n-type silicon layer with p-type impurities by using the resist layer as a mask.

Abstract: A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film

Abstract: A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film

Abstract: A resistor for a semiconductor device includes a thin film resistor layer sandwiched between thin film silicon layers. A thin film silicon oxide layer formed on the upper silicon layer prevents oxidation of the upper silicon layer, so that the upper silicon layer serves as a stopper for subsequent etching of the device to provide contacts for the resistor.

Abstract: A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film

Abstract: A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; an n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.

Abstract: An amorphous silicon thin film transistor includes a gate electrode, an amorphous silicon layer on the gate insulating layer, a drain electrode and a source electrode on the amorphous silicon layer such that a portion of the side of the amorphous silicon layer which faces away from the gate electrode is exposed, and an impurity layer for reducing an off current of the transistor, the impurity layer including an impurity forming an acceptor and which is formed on the exposed portion of the amorphous silicon layer, the amorphous silicon layer being of a first conduction type and the acceptor being of a second different conduction type.