Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Abstract: The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof.

Abstract: The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

Abstract: It is an object of the present invention to provide a highly-functional bonding wire which can reduce damages at a neck part, has good linearity of loops, stability of loop heights, and stability of bonded shape of a bonding wire, and can cope with semiconductor packaging techniques, such as low looping, thinning, achievement of a fine pitch, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of <100> orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.

Abstract: It is an object of the present invention to provide a highly-functional bonding wire which has good wire-surface nature, loop linearity, stability of loop heights, and stability of a wire bonding shape, and which can cope with semiconductor packaging technologies, such as thinning, achievement of a fine pitch, achievement of a long span, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of <100> orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

Abstract: The invention provides a dresser for an abrasive cloth, which has a smaller abrasive grain diameter than the conventional dresser and has an abrasive grain spacing regulated in a predetermined range depending upon the abrasive grain diameter to simultaneously meet a high level of pad grinding power and a pad flatness and, at the same time, is less likely to cause dropout of abrasive grains. The dresser comprises a plurality of abrasive grains fixed as a single layer on a surface of a metallic support material. The dresser is characterized in that the metallic support material on its surface on which the abrasive grains are fixed has a convex shape, the difference in height between the end part and the central port on the surface is not less than 3 ?m and not more than 40 ?m, and the center-to-center spacing between at least one set of adjacent grains is d?L<2d wherein d represents the diameter of the abrasive grains; L represents the center-to-center spacing between adjacent abrasive grains.

Abstract: Gold wire for connecting a semiconductor chip basically containing praseodymium in 0.0004 mass % to 0.02 mass % in range and, considering the bonding characteristics, containing beryllium or aluminum or both in limited ranges and, considering the precipitates formed in the gold wire, further containing auxiliary additive elements of calcium, lanthanum, cerium, neodymium, and samarium in limited ranges.

Abstract: The present invention provides a bonding wire improved in formability of a ball part, improved in bondability, good in loop controllability, improved in bonding strength of a wedge connection, securing industrial production ability as well, and mainly comprised of copper which is more inexpensive than gold wire, that is, provides a bonding wire for a semiconductor device comprised of a bonding wire having a core material having copper as its main ingredient and a surface covering layer over the core material and of a conductive metal of a composition different from the core material, characterized in that the surface covering layer has as its main ingredients two or more types of metals selected from gold, palladium, platinum, rhodium, silver, and nickel and the surface covering layer has a concentration gradient of one or both of a main ingredient metal or copper in the wire radial direction.

Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 ?m, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

Abstract: A Cr trapping agent is disposed so that it contacts with constituting components of the substrate containing Cr. As the Cr trapping agent, an element or Ag is used, wherein the element is stronger in basicity than alkali metals or alkaline earth metals. Since the Cr trapping agent prevents transfer of Cr towards the alkali metals or alkaline earth metals, the reaction between Cr and alkali metals or alkaline earth metals is prevented.

Abstract: A stainless steel substrate with one or more conductive metal layers, a method for manufacturing the same, and a hard disk drive suspension material using the same that are excellent in etching accuracy and does not involve the use of any substances casing environmental burdens, while ensuring stable adhesion between the conductive metal layers on the stainless steel substrate and the polyimide-based resin layer. The conductive metal layers are formed to have a total thickness ranging from 0.1 to 10 ?m, a centerline average surface roughness Ra from 0.05 to 1 ?m, and a ten-point average surface roughness Rz from 1 to 5 ?m, respectively.

Abstract: The present invention provides a method of refining low purity Si by a slag, in particular removing B, which suppresses wear of the reaction vessel due to the slag and produces high purity Si used for solar battery materials etc. at a low cost, comprising adding SiO2 and an alkali oxide or alkali carbonate as a slag material into molten Si to form a slag during which adding one or more types of materials among materials the same as the reaction vessel material used or ingredients included in the reaction vessel material into the slag so as to remove the impurities in the molten Si.

Abstract: A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu3Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu6Sn5 intermetallic compound layer is formed thereon. A Cu atomic site in the Cu6Sn5 intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu6Sn5 intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.

Abstract: An object of the invention is to provide a method for producing a large amount of inexpensive high purity silicon useful for a solar battery. Disclosed is a method for producing high purity silicon by migrating impurities in silicon to slag including performing a first slag purification of a first silicon, separating the slag from the first silicon after finishing the first slag purification, and feeding the separated slag to a second molten silicon in a second purification of the second silicon, wherein purity of said second silicon prior to purification is lower than purity of the first silicon after purification.

Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.

Abstract: A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch.

Abstract: There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.

Abstract: An object of the invention is to provide a method for producing a large amount of inexpensive and high purity silicon useful in a solar battery. The method includes steps of preparing molten silicon, preparing a slag, bringing the molten silicon and the slag into contact with each other, and exposing at least the slag to vacuum pressure.

Abstract: The invention relates to a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing high purity silicon by removing boron from silicon by oxidization including commencing an oxidization reaction between an oxidizing agent and molten silicon, and cooling at least part of the oxidizing agent during the reaction.