Abstract: An object of the present invention is to provide a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing the high purity silicon by migrating impurities in molten silicon to slag including the step of feeding an oxidizing agent to the molten silicon together with slag, wherein the oxidizing agent is a material comprising as a primary component at least one of the following materials: alkali metal carbonate, hydrate of alkali metal carbonate, alkali metal hydroxide, alkaline-earth metal carbonate, hydrate of alkaline-earth metal carbonate or alkaline-earth metal hydroxide.

Abstract: An object of the invention is to provide a method for producing a large amount of inexpensive high purity silicon useful for a solar battery. Disclosed is a method for producing high purity silicon by migrating impurities in silicon to slag including performing a first slag purification of a first silicon, separating the slag from the first silicon after finishing the first slag purification, and feeding the separated slag to a second molten silicon in a second purification of the second silicon, wherein purity of said second silicon prior to purification is lower than purity of the first silicon after purification.

Abstract: A bonded body obtained by unifying a plurality of structural members exhibiting 0.6*10?6/K or less of absolute value of thermal expansion coefficient in room temperature, 100 GPa or more of modulus of elasticity and 40 GPa·cm3/g or more of specific rigidity, the plurality of structural members having bonding surfaces that are brought into contact with each other and are unified by a heating process, and a manufacturing method thereof are provided. The sintered block contains 51.5 to 70.0 oxide-equivalent mass % of Si, the oxide-equivalent mass % being calculated as a ratio of Si in elements (Mg, Al and Si) constituting the sintered block on oxide (MgO, Al2O3, SiO2) basis. Surplus SiO2 residing in the sintered block forms a liquid phase during the heating process to activate mass transfer, so that the material of the bonded portion becomes substantially the same as the base material.

Abstract: The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

Abstract: Balls are sucked onto a carrier board so as to be temporarily arranged in a ball arrangement region of the board, and then the balls are transferred and bonded onto an objective substance with their positions being adjusted. Gas blow is applied to the temporarily arranged balls or alternatively the temporarily arranged balls are sucked, so as to remove excess balls other than balls that have been exactly sucked onto the ball arrangement region. Cooperation with application of fine vibration to the carrier board makes the removal of the excess balls more efficient.

Abstract: Balls are sucked onto a carrier board so as to be temporarily arranged in a ball arrangement region of the board, and then the balls are transferred and bonded onto an objective substance with their positions being adjusted. Gas blow is applied to the temporarily arranged balls or alternatively the temporarily arranged balls are sucked, so as to remove excess balls other than balls that have been exactly sucked onto the ball arrangement region. Cooperation with application of fine vibration to the carrier board makes the removal of the excess balls more efficient.

Abstract: A Cr trapping agent is disposed so that it contacts with constituting components of the substrate containing Cr. As the Cr trapping agent, an element or Ag is used, wherein the element is stronger in basicity than alkali metals or alkaline earth metals. Since the Cr trapping agent prevents transfer of Cr towards the alkali metals or alkaline earth metals, the reaction between Cr and alkali metals or alkaline earth metals is prevented.