Abstract: A steel foil for an electrical storage device container, including a steel foil, a metal chromium layer layered on the steel foil, and a hydrated chromium oxide layer layered on the metal chromium layer, in which the concentration of Fe from a surface of the hydrated chromium oxide layer to a depth of 10 nm is less than 10% by mass, the area ratio of a site having an arithmetic mean roughness Ra of 10 nm or more in a visual field of 1 ?m at the surface of the hydrated chromium oxide layer is less than 20%, and a site having an arithmetic mean roughness Ra of less than 10 nm in a visual field of 1 ?m has an arithmetic mean roughness Ra of 3 nm or less in a visual field of 1 ?m at the surface of the hydrated chromium oxide layer, is adopted.

Abstract: The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

Abstract: A metal foil including: a steel layer whose thickness is 10 to 200 ?m; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 ?m, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of ?m and a thickness of the Al-containing metal layer is T in units of ?m, the granular alloys satisfy x?0.5T.

Abstract: A resin-metal composite sealed container having a heat seal part using a heat-sealing resin, between an end part of a first metal foil and an end part of a second metal foil, and a metallically sealed part with a weld bead, on the end face outside the heat sealed part of the first metal foil and the second metal foil. The resin-metal composite sealed container, wherein the melting point of the metal constituting the metal foil is higher by 300° C. or more than the thermal decomposition temperature of the heat-sealing resin, the specific gravity of the metal constituting the metal foil is 5 or more, and the weld bead is formed by a laser welding.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: A sheet glass tool in which many abrasive grains are anchored in an anchoring layer formed on the tool tip, wherein a coolant flow channel is formed between a first abrasive grain and a second abrasive grain that are adjacent to each other.

Abstract: Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.

Abstract: Problems to be Solved: To provide a metal foil coil with a planarization film, with which an electronic device can be formed by a roll to roll process. Solution: A quick curable coating liquid for a planarization film prepared by adding into an organic solvent, with respect to 1 mol of a phenyltrialkoxysilane, 0.1 mol to 1 mol of acetic acid and 0.005 mol to 0.05 mol of organic tin as a catalyst, hydrolyzing the silane with 2 mol to 4 mol of water, then distilling away the organic solvent at a temperature of 160° C. to 210° C. under reduced pressure to yield a resin, and dissolving the resin in an aromatic hydrocarbon solvent, is coated on a metal foil coil to a film thickness of 2.0 ?m to 5.0 ?m. When an insulation coating is provided on a metal foil coil before a planarization film is formed, high reliability for insulation can be obtained. When a stainless steel foil provided with a reflection film is used, a highly efficient light emitting device can be obtained.

Abstract: A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

Abstract: Spherical crystalline silica particles having a higher productivity, lower production cost, higher coefficient of thermal expansion, higher heat transmission rate, higher fluidity, higher dispersability, higher fill factor, low abrasiveness, and higher purity compared with the past and able to be applied in the semiconductor field and a process of production of the same are provided. Spherical crystalline silica particles containing 400 to 5000 ppm of aluminum and containing 80% or more of crystal phases are provided.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 ?m provides a strength ratio of 1.6 or less.

Abstract: A thin-plate-like flexible carbon plate having flexibility, excellent compressive strength, and even electrical conductivity is provided. A carbon plate 1 is a carbon plate having a thickness of 0.05 to 2.0 mm obtained by compression molding of a mixture of (a) 97 to 80 wt % carbon powder composed of 95 to 30 wt % expanded graphite powder and 5 to 70 wt % graphite powder, and (b) 3 to 20 wt % phenolic resin that do not contain ammonia, wherein a compressive strength is 3 MPa or more, a bending strain is 0.6% or more without a crack, and a contact resistance is 6 m?·cm2 or less.

Abstract: The present invention provides a resin-coated stainless steel foil capable of maintaining a strong adherence force to the film even in an electrolytic solution to exhibit good corrosion resistance and excellent in the workability, design property and piecing resistance, and a container and a secondary battery each using the resin-coated stainless steel foil. A resin-coated stainless steel foil having a chromate treatment layer of 2 to 200 nm in thickness on at least one surface of a stainless steel foil and having at least a polyolefin-based resin (A) layer containing a functional group having polarity on the chromate treatment layer; and a container and a secondary battery each using the resin-coated stainless steel foil are also provided.

Abstract: Provided are a method by which the degrees of the strains of lattices in a plurality of bulk SiC single crystals can be relatively evaluated, and a reference SiC single crystal to be used in the method.

Abstract: A reinforcing method and structure for a steel structure and an elastic layer forming material for reinforcing a steel structure are provided that can prevent a reinforcing effect from being lowered by direct sunlight, can obtain a sufficient reinforcing effect, and can prevent a fiber sheet from being peeled away from a steel structure surface before the fiber sheet is torn. The reinforcing method for a steel structure, in which a fiber sheet including reinforcing fibers is bonded to a surface of the steel structure to integrate the fiber sheet with the steel structure, includes (a) a step of applying and hardening a polyurea resin putty to the surface of the steel structure to form an elastic layer, and (b) a step of bonding the fiber sheet to the surface of the steel structure having the elastic layer formed thereon with an adhesive agent.

Abstract: A steel foil for a power storage device container includes a rolled steel foil, a nickel layer formed on a surface of the rolled steel foil, and a chromium-based surface treatment layer formed on a surface of the nickel layer. The nickel layer includes an upper layer portion which is in contact with the chromium-based surface treatment layer and contains Ni of 90 mass % or more among metal elements, and a lower layer portion which is in contact with the rolled steel foil and contains Ni of less than 90 mass % among the metal elements and Fe. <111> polar density in a reverse pole figure of the nickel layer in a rolling direction is 3.0 to 6.0. The nickel layer has a sub-boundary which is a boundary between two crystals having a relative orientation difference of 2° to 5°, and a large angle boundary which is a boundary between two crystals having the relative orientation difference of equal to or more than 15°.

Abstract: A steel foil for a power storage device container includes a rolled steel foil which has a thickness of 200 ?m or less, a diffusion alloy layer which is formed on a surface layer of the rolled steel foil and contains Ni and Fe, and a chromium-based surface treatment layer which is formed on the diffusion alloy layer. The <111> polar density in a reverse pole figure of the diffusion alloy layer in a rolling direction is 2.0 to 6.0, and the aspect ratio of crystal in a surface of the diffusion alloy layer is 1.0 to 5.0.

Abstract: The present invention has as its object to provide thickness 60 ?m or less ultra-thin stainless steel foil which secures high thickness precision and simultaneously secures plastic deformability and good elongation at break, that is, secures good press-formability (deep drawability). The present invention solves this problem by ultra-thin stainless steel foil which has three or more crystal grains in a thickness direction, has a recrystallization rate of 90% to 100%, and has a nitrogen concentration of a surface layer of 1.0 mass % or less. For this reason, there is provided a method of production of stainless steel foil comprising rolling stainless steel sheet, then performing final annealing and making a thickness 5 ?m to 60 ?m, wherein a rolling reduction ratio at rolling right before final annealing is 30% or more, a temperature of final annealing after rolling is 950° C. to 1050° C. in the case of austenitic stainless steel and 850° C. to 950° C.

Abstract: Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 ?m2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.

Abstract: Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 ?m2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.