Abstract: The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.

Abstract: The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof.

Abstract: A solder ball which suppresses generation of voids in a joint, excels in a thermal fatigue property, and can also obtain a good drop impact resistance property, and an electronic member using the same are provided. The solder ball is formed of a Sn—Bi type alloy containing Sn as a main element, 0.3 to 2.0 mass % of Cu, 0.01 to 0.2 mass % of Ni, and 0.1 to 3.0 mass % of Bi, and an intermetallic compound of (Cu, Ni)6Sn5 is formed in the Sn—Bi alloy so that the generation of voids in the joint when being jointed to an electrode is suppressed, a thermal fatigue property is excellent, and a good drop impact resistance property can also be obtained.

Abstract: An insulating film-coated metal foil having on one or both surfaces thereof an organic-inorganic hybrid layer containing dimethylsiloxane and a metalloxane comprising a metal other than Si. Relative to the concentration [Si]1/4t of the Si at a depth of ¼t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer, the concentration [Si]3/4t of the Si at a depth of ¾t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer satisfies [Si]1/4t<[Si]3/4t, and ([Si]3/4t?[Si]1/4t)/[Si]3/4t is 0.02-0.23. Provided is a metal foil that can be used in solar cell substrates, flexible circuit substrates, etc., that exhibits surface flatness, pliability, insulating properties and thermal resistance properties, and that has a layer having a surface which is not susceptible to scratching by processes in which substrates are handled, such as conveyance and transshipment.

Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.

Abstract: Provided is a beveling grindstone in which diamond abrasive grains etc. are prevented from falling off even after long-term grinding to allow long-term use of the grindstone and in which chipping that occurs during beveling of a hard and brittle material and the occurrence of cracking in the ground material are suppressed. The beveling grindstone is used to bevel the outer circumferential edge of a hard and brittle material and includes: a core having a groove portion formed on the outer circumferential surface thereof with which the outer circumferential edge of the hard and brittle material is brought into contact; and an abrasive grain layer which is formed in the groove portion and to which abrasive grains are secured by brazing. The abrasive grains have an average grain diameter of #4000 to #270.

Abstract: The present invention provides a high Al-content steel sheet having an excellent workability and a method of production of the same at a low cost by mass production, a high Al-content metal foil and a method of production of the same, and a metal substrate using a high Al-content metal foil, that is, a high Al-content steel sheet having an Al content of 6.5 mass % to 10 mass %, the high Al-content steel sheet characterized by having one or both of a {222} plane integration of an ?-Fe crystal with respect to the surface of the steel sheet of 60% to 95% or a {200} plane integration of 0.01% to 15% and a method of production of the same, a high Al-content metal foil and a method of production of the same, and a metal substrate using a high Al-content metal foil.

Abstract: A reinforcing method and structure for a steel structure and an elastic layer forming material for reinforcing a steel structure are provided that can prevent a reinforcing effect from being lowered by direct sunlight, can obtain a sufficient reinforcing effect, and can prevent a fiber sheet from being peeled away from a steel structure surface before the fiber sheet is torn. The reinforcing method for a steel structure, in which a fiber sheet including reinforcing fibers is bonded to a surface of the steel structure to integrate the fiber sheet with the steel structure, includes (a) a step of applying and hardening a polyurea resin putty to the surface of the steel structure to form an elastic layer, and (b) a step of bonding the fiber sheet to the surface of the steel structure having the elastic layer formed thereon with an adhesive agent.

Abstract: The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 ?m as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

Abstract: The present invention provides stainless steel foil for flexible display use which enables fabrication of a TFT substrate for display use which is superior in shape recovery after being rolled up or bent and which is high in surface flatness and is characterized by having a thickness of 20 ?m to 200 ?m, a surface roughness Ra of 50 nm or less, and a shape recovery of a distortion angle of 10° or less after being wound around a 30 mm diameter cylinder.

Abstract: According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/?m] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.

Abstract: A bonding structure of a ball-bonded portion is obtained by bonding a ball portion formed on a front end of a multilayer copper bonding wire. The multilayer copper bonding wire includes a core member that is mainly composed of copper, and an outer layer that is formed on the core member and is mainly composed of at least one noble metal selected from a group of Pd, Au, Ag and Pt. Further, a first concentrated portion of such noble metal(s) is formed in a ball-root region located at a boundary with the copper bonding wire in a surface region of the ball-bonded portion.

Abstract: A production method comprising the steps of: spraying an aluminum hydroxide powder having a specific surface area measured by a nitrogen adsorption method of 0.3 m2/g or more and 3 m2/g or less; a ratio of an average particle diameter D50, which is a particle diameter at which 50% by weight of particles from the finest particle side are accumulated in a particle diameter distribution measured by a laser diffraction scattering method, to a sphere conversion particle diameter Dbet calculated from a specific surface area, of 10 or less; and the average particle diameter D50 of 2 ?m or more and 100 ?m or less, into flames, and then collecting it in the form of a powder to give a spherical alumina powder having a small specific surface area and a low uranium content, and capable of providing high thermal conductivity to resin compositions.

Abstract: An insulating film-coated metal foil having on one or both surfaces thereof an organic-inorganic hybrid layer containing dimethylsiloxane and a metalloxane comprising a metal other than Si. Relative to the concentration [Si]1/4t of the Si at a depth of ¼t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer, the concentration [Si]3/4t of the Si at a depth of ¾t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer satisfies [Si]1/4t<[Si]3/4t, and ([Si]3/4t?[Si]1/4t)/[Si]3/4t is 0.02-0.23. Provided is a metal foil that can be used in solar cell substrates, flexible circuit substrates, etc., that exhibits surface flatness, pliability, insulating properties and thermal resistance properties, and that has a layer having a surface which is not susceptible to scratching by processes in which substrates are handled, such as conveyance and transshipment.

Abstract: A bonding wire for semiconductor includes: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer. The alloy layer contains a noble metal and palladium and having a thickness of 1 to 80 nm. The noble metal is either gold or silver, and a concentration of the noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

Abstract: Provided is a beveling grindstone in which diamond abrasive grains etc. are prevented from falling off even after long-term grinding to allow long-term use of the grindstone and in which chipping that occurs during beveling of a hard and brittle material and the occurrence of cracking in the ground material are suppressed. The beveling grindstone is used to bevel the outer circumferential edge of a hard and brittle material and includes: a core having a groove portion formed on the outer circumferential surface thereof with which the outer circumferential edge of the hard and brittle material is brought into contact; and an abrasive grain layer which is formed in the groove portion and to which abrasive grains are secured by brazing. The abrasive grains have an average grain diameter of #4000 to #270.

Abstract: According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/?m] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.

Abstract: A bonding structure and a copper bonding wire for semiconductor device include a ball-bonded portion formed by bonding to the aluminum electrode a ball formed on a front end of the copper bonding wire. After being heated at any temperature between 130° C. and 200° C., the ball-bonded portion exhibits a relative compound ratio R1 of 40-100%, the relative compound ratio R1 being a ratio of a thickness of a Cu—Al intermetallic compound to thicknesses of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of the ball-bonded portion.

Abstract: The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

Abstract: There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.