Abstract: The present invention comprises: a high-frequency power supply; an antenna group having a plurality of antennas connected to the high-frequency power supply; a plurality of reactance variable elements connected to the feeding sides and the grounding sides of the plurality of antennas; a current detection mechanism which detects the current flowing through the feeding sides and the ground sides of the plurality of antennas; a uniformity calculation unit which calculates the uniformity index value of the current flowing through the plurality of antennas, on the basis of the current value detected by the current detection mechanism; and a reactance changing unit which sequentially changes the reactance of the plurality of reactance variable elements such that the uniformity index value calculated by the uniformity calculation unit approaches a predetermined set value.

Abstract: An uninterruptible power supply device provided between a commercial power system and an essential load and supplying AC power to the essential load includes: a power supply part that has an energy storage device and is connected to a power line for supplying power from the commercial power system to the essential load; an open switch for opening/closing the power supply line, the open switch being provided on the power line on the commercial-power-system side of the power supply part; a system abnormality detection part for detecting a system abnormality occurring on the commercial-power-system side of the open switch; and a control part that, when the detected system abnormality is equal to or greater than the tolerance of the essential load or the power supply part against system abnormalities, opens the open switch and supplies AC power from the power supply part to the essential load.

Abstract: A capacitive element using a liquid as a dielectric, whereby the capacitance is prevented from changing. The capacitive element is equipped with: a storage container that has an inlet port for introducing a liquid serving as a dielectric, has an outlet port for discharging the liquid, and is filled with the liquid; and at least one pair of electrodes that are provided in the storage container and face each other, wherein an opening section for exhausting air bubbles in the storage container is formed in an upper wall of the storage container.

Abstract: According to the present invention, provided is an antenna mechanism 3 that adjusts the impedance of an antenna body through which a high-frequency current flows to generate plasma by means of a simple configuration, and generates plasma P, and comprises: the antenna body 31 through which high-frequency current flows; and one or a plurality of adjustment circuits 32 provided adjacent to the antenna body 31. The adjustment circuit 32 has a metal conductor 321 forming a closed circuit and a capacitor 322 forming the closed circuit.

Abstract: Provided is an uninterruptable power supply device. An uninterruptable power supply device 100, which is provided between a commercial power system 10 and an essential load 30 and which provides AC power to the essential load 30, wherein the uninterruptable power supply device 100 is provided with: a power supply unit 2, which has a power converter 22 and a storage battery 21 and which is connected to a power line L1; an open switch 3 for opening the power supply line L1; a system abnormality detection unit 5 for detecting a system abnormality, which is at least one of voltage rise, phase fluctuation, voltage imbalance, harmonic abnormality, and flicker, in addition to at least one of frequency fluctuation and voltage drop including instantaneous voltage drop; and a control unit 6 which, opens the open switch 3 and supplies AC power to the essential load 30.

Abstract: A power supply system includes a distributed power supply, an opening/closing switch, an impedance element, a system abnormality detection part, and a switch control part. The distributed power supply is connected to a power line for supplying power to an important load from a commercial power system. The opening/closing switch is provided on a commercial power system side of the distributed power supply. The impedance element is connected in parallel to the opening/closing switch. The system abnormality detection part detects an abnormality of the commercial power system. The switch control part opens the opening/closing switch and connects the distributed power supply and the commercial power system via the impedance element when an abnormality of the commercial rower system is detected. When the distributed power supply and the commercial power system are connected via the impedance element, the distributed power supply continues an operation including a reverse power flow.

Abstract: The present invention comprises: a high-frequency power supply; an antenna group having a plurality of antennas connected to the high-frequency power supply; a plurality of reactance variable elements connected to the feeding sides and the grounding sides of the plurality of antennas; a current detection mechanism which detects the current flowing through the feeding sides and the ground sides of the plurality of antennas; a uniformity calculation unit which calculates the uniformity index value of the current flowing through the plurality of antennas, on the basis of the current value detected by the current detection mechanism; and a reactance changing unit which sequentially changes the reactance of the plurality of reactance variable elements such that the uniformity index value calculated by the uniformity calculation unit approaches a predetermined set value.

Abstract: Provided is a method for producing a thin film transistor that has a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode on a substrate. This method for producing a thin film transistor includes a step for forming the oxide semiconductor layer on the gate insulating layer by performing sputtering on a target with plasma. The step for forming the oxide semiconductor layer includes: a first film formation step in which only argon is supplied as a sputtering gas to perform sputtering; and a second film formation step in which a mixed gas of argon and oxygen is supplied as the sputtering gas to perform sputtering. A bias voltage applied to the target is a negative voltage of ?1 kV or higher.

Abstract: An uninterruptible power supply device provided between a commercial power system and an essential load and supplying AC power to the essential load includes: a power supply part that has an energy storage device and is connected to a power line for supplying power from the commercial power system to the essential load; an open switch for opening/closing the power supply line, the open switch being provided on the power line on the commercial-power-system side of the power supply part; a system abnormality detection part for detecting a system abnormality occurring on the commercial-power-system side of the open switch; and a control part that, when the detected system abnormality is equal to or greater than the tolerance of the essential load or the power supply part against system abnormalities, opens the open switch and supplies AC power from the power supply part to the essential load.

Abstract: A power supply apparatus (1) is provided with an energy storage device (10), a converter (20) for converting DC output to AC output, and a control unit (60). The control unit (60) controls the converter (20) such that, when an output current value exceeds a first limit value, the output current value becomes a predetermined value larger than the first limit value by lowering an output voltage value to less than a normal state value.

Abstract: The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

Abstract: The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

Abstract: The apparatus includes: a vacuum container; a substrate-holding part inside the vacuum container; a target-holding part inside the vacuum container; and a plurality of antennas having a flow channel through which a cooling liquid flows. The antennas include: at least two tubular conductor elements; a tubular insulating element that is arranged between mutually adjacent conductor elements and insulates the conductor elements; and a capacitive element that is connected electrically in series to the mutually adjacent conductor elements. The capacitive element includes: a first electrode which is connected electrically to one of the mutually adjacent conductor elements; a second electrode which is connected electrically to the other of the mutually adjacent conductor elements and is disposed facing the first electrode; and a dielectric substance that fills the space between the first electrode and the second electrode. The dielectric substance is a cooling liquid.

Abstract: An antenna conductor is cooled to stably generate plasma, and unexpected fluctuation in the electrostatic capacity of a variable capacitor connected to the antenna conductor is suppressed while cooling the variable capacitor. A plasma processing device which generates plasma in a vacuum container and processes a substrate by using the plasma is provided. The plasma processing device includes: an antenna conductor through which a high-frequency current is caused to flow to generate plasma, and a variable capacitor which is electrically connected to the antenna conductor. The antenna conductor has a flow path in which a cooling liquid flows. A dielectric of the variable capacitor is constituted of the cooling liquid flowing through the antenna conductor.

Abstract: Provided is a power supply system comprising: distributed energy resources (2) connected to a power line (L1) for feeding power from a commercial power system (10) to an important load (30); a switch (3) provided in the power line (L1) for opening and closing the power line (L1); an impedance element (4) connected in parallel to the switch (3) in the power line (L1); a voltage detection unit (5) for detecting a voltage on the commercial power system (10) side with respect to the switch (3); and a control unit (6) for releasing, when a voltage detected by the voltage detection unit (5) becomes equal to or lower than a set point, the switch (3) such that the distributed energy resources (2) and the commercial power system (10) are connected through the impedance element (4), and the distributed energy resources (2) continue operation including reverse power flow.

Abstract: An antenna conductor is cooled to stably generate plasma, and unexpected fluctuation in the electrostatic capacity of a variable capacitor connected to the antenna conductor is suppressed while cooling the variable capacitor. A plasma processing device which generates plasma in a vacuum container and processes a substrate by using the plasma is provided. The plasma processing device includes: an antenna conductor through which a high-frequency current is caused to flow to generate plasma, and a variable capacitor which is electrically connected to the antenna conductor. The antenna conductor has a flow path in which a cooling liquid flows. A dielectric of the variable capacitor is constituted of the cooling liquid flowing through the antenna conductor.

Abstract: A plasma control system comprises: a high frequency power source; a first antenna connected at one end to the high frequency power source; a second antenna connected at one end to another end of the first antenna; a first variable reactance element provided between the first antenna and the second antenna; a first drive part for the first variable reactance element; a second variable reactance element connected to another end of the second antenna; a second drive part for the second variable reactance element; a first current detection part detecting the current in the one end of the first antenna; a second current detection part detecting the current between the first antenna and the second antenna; a third current detection part detecting the current in the other end of the second antenna; and a control device controlling the first drive part and the second drive part.

Abstract: A substrate holding device includes: a frame body on which a substrate transferred by a transfer device is mounted, and a substrate delivery mechanism for delivering, to the frame body, the substrate transferred to the above of the frame body by the transfer device. The substrate delivery mechanism includes: a support pin arranged below the frame body, a support pin advancing/retreating mechanism for advancing and retreating the support pin between a support pin lifting/lowering position set on a lower side inside the frame body and a support pin retracting position set outside the frame body, and a support pin lifting/lowering mechanism by which the support pin arranged in the support pin lifting/lowering position by the support pin advancing/retreating mechanism is lowered after being lifted so as to pass through the interior of the frame body and support the substrate.

Abstract: The present invention realizes a plasma treatment device with which a film deposition rate and film thickness of a film formed on a substrate can be made uniform. A plasma treatment device (1) includes: a plurality of antennas (20) for plasma generation arranged in a vacuum chamber (10); and a plurality of groups of multiple gas injection ports (30) arranged in the vicinity of lines (L1) that are substantially perpendicular to longitudinal directions (D1) of the plurality of antennas (20) and extend in a direction in which the plurality of antennas (20) are arranged with respect to each other. The plasma treatment device further includes a gas flow-rate control unit for controlling flow rates of gas injected from each of groups of the multiple gas injection ports (30).

Abstract: Provided is an uninterruptable power supply device. An uninterruptable power supply device 100, which is provided between a commercial power system 10 and an essential load 30 and which provides AC power to the essential load 30, wherein the uninterruptable power supply device 100 is provided with: a power supply unit 2, which has a power converter 22 and a storage battery 21 and which is connected to a power line L1; an open switch 3 for opening the power supply line L1; a system abnormality detection unit 5 for detecting a system abnormality, which is at least one of voltage rise, phase fluctuation, voltage imbalance, harmonic abnormality, and flicker, in addition to at least one of frequency fluctuation and voltage drop including instantaneous voltage drop; and a control unit 6 which, opens the open switch 3 and supplies AC power to the essential load 30.